LA56B-EG-S3-PF

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA56B/EG-S3-PF DATA SHEET DOC. NO : QW0905-LA56B/EG-S3-PF REV. DATE :A : 26 - Mar. - 2009 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA56B/EG-S3-PF Page 1/6 Package Dimensions 7.5±0.3 7.6±0.5 6 6 3 2.5 3.2±0.4 1.1 1 2 6.5 3 3 5.25±0.5 G E 1.CATHODE GREEN 2.COMMON ANODE 3.CATHODE RED 1 23 LEG3392/R1-PF 5.0 5.9 7.6 8.6 10.5±0.5 1.5MAX G 0.5 TYP 18.0MIN E 1 2.0MIN 2 3 2.0MIN 1 23 1.CATHODE GREEN 2.COMMON ANODE 3.CATHODE RED 2.54TYP 2.54TYP Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA56B/EG-S3-PF Page 2/6 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol E Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Operating Temperature Storage Temperature IF IFP PD Ir Topr Tstg 30 120 100 10 -40 ~ +85 -40 ~ +100 G 30 120 100 10 mA mA mW UNIT μA ℃ ℃ Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO MATERIAL Emitted GaAsP/GaP Orange COLOR Forward Peak Spectral voltage wave halfwidth length △λ nm @20mA(V) λPnm Luminous intensity @10mA(mcd) Viewing angle 2θ 1/2 (deg) Lens 635 White Diffused Min. Max. Min. 45 30 1.7 1.7 2.6 2.6 0.5 1.2 Typ. 1.2 1.8 76 76 LA56B/EG-S3-PF GaP Green 565 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA56B/EG-S3-PF Page 3/6 Typical Electro-Optical Characteristics Curve E CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 1000 Forward Current(mA) 100 Relative Intensity Normalize @20mA 2.0 3.0 4.0 5.0 2.5 2.0 1.5 1.0 0.5 0.0 10 1.0 0.1 1.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 Forward Voltage@20mA Normalize @25 ℃ 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Relative Intensity@20mA Normalize @25 ℃ 1.2 Ambient Temperature(℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 550 600 650 700 750 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA56B/EG-S3-PF Page 4/6 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 1000 Forward Current(mA) 100 Relative Intensity Normalize @20mA 1.0 2.0 3.0 4.0 5.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 10 1.0 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 Forward Voltage@20mA Normalize @25 ℃ 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Relative Intensity@20mA Normalize @25 ℃ 1.2 Ambient Temperature(℃) Ambient Temperature(℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA56B/EG-S3-PF Page 5/6 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350°C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to case) 2.Wave Soldering Profile Dip Soldering Preheat: 120°C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5°C/sec(max) Solder Bath:260°C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to case) Temp(° C) 260° C3sec Max 260° 5° /sec max 120° 2° /sec max Preheat 60 Seconds Max 50 100 150 Time(sec) 25° 0° 0 Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA56B/EG-S3-PF Page 6/6 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2