LA62B-3-YG-3

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only OFFICE:7F.,NO.208,SEC.3,JHONGYANG Rd.,Tucheng City Taipei Hsien,Taiwan R.O.C TEL:(02)22677686(REP) FAX:(02)22675286,(02)22695616 LED ARRAY LA62B-3/YG-3 DATA SHEET DOC. NO : REV. DATE : : QW0905-LA62B-3/YG-3 A 23 - Nov - 2004 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA62B-3/YG-3 Page 1/5 Package Dimensions 7.0 1.3±0.5 6.35 2.9 7.37 5.08 3.5±0.5 □0.5 TYP 5.4±0.5 2.54TYP 1 2 2.54TYP 3 G Y 1 + 2 - 3 + 1.ANODE GREEN 2.COMMON CATHODE 3.ANODE YELLOW LYG2692 2.9 3.1 3.3 4.3 1.5 MAX 6.45±0.5 GY □0.5 TYP 18.0MIN 1 2 3 1 2 3 1.ANODE GREEN 2.COMMON CATHODE 3.ANODE YELLOW 2.0MIN 2.0MIN 2.54TYP 2.54TYP Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA62B-3/YG-3 Page 2/5 Absolute Maximum Ratings at Ta=25 ℃ Absolute Maximum Ratings Parameter Symbol Y Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Operating Temperature Storage Temperature Soldering Temperature IF IFP PD Ir Topr Tstg Tsol 20 80 60 10 -40 ~ +85 -40 ~ +100 Max 260 ℃ for 5 sec Max (2mm from Body) G 30 120 100 10 mA mA mW UNIT μA ℃ ℃ Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO MATERIAL Emitted GaAsP/GaP Yellow COLOR Forward Peak Spectral voltage wave halfwidth length △λ nm @20mA(V) λPnm Luminous intensity @10mA(mcd) Viewing angle 2θ 1/2 (deg) Lens 585 White Diffused Min. Max. Min. 35 30 1.7 1.7 2.6 2.6 8.0 12 Typ. 17 26 50 50 LA62B-3/YG-3 GaP Green 565 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA62B-3/YG-3 Page 3/5 Typical Electro-Optical Characteristics Curve Y CHIP Fig.1 Forward current vs. Forward Voltage 1000 Fig.2 Relative Intensity vs. Forward Current 3.0 Forward Current(mA) 100 10 1.0 Relative Intensity Normalize @20mA 2.0 3.0 4.0 5.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature Forward Voltage@20mA Normalize @25 ℃ Relative Intensity@20mA Normalize @25 ℃ 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature( ℃) Ambient Temperature(℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 500 550 600 650 700 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA62B-3/YG-3 Page 4/5 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage 1000 Fig.2 Relative Intensity vs. Forward Current 3.5 Forward Current(mA) 100 10 1.0 Relative Intensity Normalize @20mA 2.0 3.0 4.0 5.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ 1.1 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature( ℃) Ambient Temperature(℃) Fig.5 Relative Intensity vs. Wavelength 1.0 Relative Intensity@20mA 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA62B-3/YG-3 Page 5/5 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2