LBD142A-XX-RP25

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BAR DIGIT LED DISPLAY LBD142A-XX/RP25 DATA SHEET DOC. NO REV. DATE : : QW0905- LBD142A-XX/RP25 A : 19 - Apr. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page 1/9 Package Dimensions 43.6(1.717") 5x7=35(1.38") 6.0 (0.236") Y 5.6 (0.22") 2.5 ±0.5 R G Y R R R G 4.2 (0.165) 1.5 (0.059") 2.54X9= 22.86(0.9") Ø0.45 TYP 4.2 (0.165") 4.0 5.0 (0.197") 3.0 (0.118") LBD142A-XX/RP25 LIGITEK PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page 2/9 Internal Circuit Diagram LBD142A-XX/RP25 1, 10 HYS HRF UG HYS HRF HRF HRF UG 23456789 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page 3/9 Electrical Connection PIN NO.1 1 2 3 4 5 6 LBD142A-XX/RP25 Common Anode Cathode Yellow Cathode Red Cathode Green Cathode Yellow Cathode Red 7 8 9 10 Cathode Red Cathode Red Cathode Green Common Anode LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page 4/9 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol HYS Forward Current Per Chip Peak Forward Current PerChip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Electrostatic Discharge( * ) Operating Temperature Storage Temperature IF 30 HRF 30 UG 30 mA mA UNIT IFP 60 90 120 PD Ir ESD Topr Tstg 75 75 10 2000 -40 ~ +85 -40 ~ +85 100 mW μA μA ℃ ℃ Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) Electrical PART NO common cathode or anode Material Emitted CHIP AlGaInP Yellow λD (nm) 587 △λ (nm) 15 20 20 1.7 1.5 1.7 Vf(v) Iv(mcd) IV-M Min. Typ. Max. Min. Typ. 2.1 1.8 2.1 2.6 15.25 2.4 2.6 6.1 10.5 26 10.5 18 2:1 2:1 2:1 LBD142A-XX/RP25 AlGaInP Red AlGaInP Green Common Anode 630 574 Note : 1.The forward voltage data did not including ± 0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page 5/9 Test Condition For Each Parameter Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio Symbol Vf Iv Unit volt mcd nm nm Test Condition If=20mA If=10mA If=20mA If=20mA Vr=5V λD △λ Ir IV-M μA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page6/9 Typical Electro-Optical Characteristics Curve HYS CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 Forward Current(mA) 100 Relative Intensity Normalize @20mA 1.0 1.5 2.0 2.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 10 1.0 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ 1.1 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength 1.0 Relative Intensity@20mA 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page 7/9 Typical Electro-Optical Characteristics Curve HRF CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.5 Forward Current(mA) 100 Relative Intensity Normalize @20mA 1.0 1.5 2.0 2.5 3.0 3.0 2.5 2.0 1.5 1.0 0.5 0 1.0 10 100 1000 10 1.0 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize@25℃ -40 -20 -0 20 40 60 80 100 2.5 2.0 1.5 1.0 0.5 0 -40 -20 -0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0 550 600 650 700 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page 8/9 Typical Electro-Optical Characteristics Curve UG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 Forward Current(mA) 100 10 Relative Intensity Normalize @20mA 4.0 5.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 0.1 1.0 2.0 3.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ -40 -20 0 20 40 60 80 100 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength 1.0 Relative Intensity@20mA 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD142A-XX/RP25 Page 9/9 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2