LBD511SGM-XX-PF

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LIGHT BAR LED DISPLAY Pb Lead-Free Parts LBD511SGM-XX-PF DATA SHEET DOC. NO REV. DATE : : QW0905- LBD511SGM-XX-PF A : 15 - Aug. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD511SGM-XX-PF Page 1/7 Package Dimensions 15.0 PIN 1 15.0 13.5 5.08 (0.2") 2 LBD511SGM-XX-PF LIGITEK 11.2 Ø0.51 TYP 7.0±0.5 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LBD511SGM-XX-PF Page 2/7 Internal Circuit Diagram LBD511SGM-XX-PF 2 1 1.CATHODE 2.ANODE Electrical Connection PIN NO.1 1 2 Cathode Anode LBD511SGM-XX-PF LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LBD511SGM-XX-PF Page 3/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol SGM Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Electrostatic Discharge( * ) Operating Temperature Storage Temperature IF 30 mA UNIT IFP 100 mA PD Ir ESD Topr Tstg 100 50 1000 -25 ~ +85 -25 ~ +85 mW μA V ℃ ℃ Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Static Electricity or power surge will the Use of anti-electrosatic * glove is recommended when handingdamageLED.LED.devices, a conductive wrist band or must be properly these All equipment and machinery grounded. Part Selection And Application Information(Ratings at 25℃) Electrical CHIP PART NO Material LBD511SGM-XX-PF common λP λD △λ Vf(v) Iv(mcd) IV-M cathode (nm) (nm) (nm) Typ. Max. Min. Typ. Emitted or anode Green InGaN/SiC Common Cathode 518 525 35 3.5 4.2 68 91 2:1 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LBD511SGM-XX-PF Page 4/7 Test Condition For Each Parameter Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Peak Wavelength Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio Symbol Vf Iv Unit volt mcd nm nm nm Test Condition If=20mA If=20mA If=20mA If=20mA If=20mA Vr=5V λP λD △λ Ir IV-M μA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LBD511SGM-XX-PF Page 5/7 Typical Electro-Optical Characteristics Curve SGM CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Forward Current vs. Relative Intensity 2.5 30 Forward Current(mA) Forward Current(mA) 2.0 1.5 1.0 0.5 0.0 0 20 10 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 20 30 40 50 Forward Voltage(V) Fig.3 Forward Current vs. Temperature 60 50 40 30 20 10 0 0 20 40 60 80 100 Relative Intensity Normalize @20mA Fig.4 Relative Intensity vs. Temperature Forward Current@20mA Relative Intensity@20mA Normalize @25℃ 2.0 1.5 1.0 0.5 0.0 20 30 40 50 60 70 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 450 500 550 600 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD511SGM-XX-PF Page 6/7 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260° C 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260° C Temp( ° C) 260° C3sec Max 260 ° 5° /sec max 120 ° 2° /sec max Preheat 60 Seconds Max 25° 0° 0 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LBD511SGM-XX-PF Page 7/7 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. J IS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2