LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LIGHT BAR LED DISPLAY
Pb
Lead-Free Parts
LBD711SBK-XX-PF
DATA SHEET
DOC. NO REV. DATE
: :
QW0905- LBD711SBK-XX-PF A
: 17 - Oct. - 2005
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LBD711SBK-XX-PF Page 1/7
Package Dimensions
20.35(0.801")
19±0.25
6.3(0.248")
5.0 (0.197")
LBD711SBK-XX-PF LIGITEK
Ø 0.5 TYP 12.5(0.492")
4.2±0.5
1 + PIN NO.1
2 -
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LBD711SBK-XX-PF Page 2/7
Internal Circuit Diagram
LBD711SBK-XX-PF
2
1
Electrical Connection
PIN NO.1 1 2 Anode Cathode
LBD711SBK-XX-PF
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PART NO. LBD711SBK-XX-PF Page 3/7
Absolute Maximum Ratings at Ta=25 ℃
Ratings Parameter Symbol SBK Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Electrostatic Discharge( * ) Operating Temperature Storage Temperature IF 30 100 mA UNIT
IFP
mA
PD Ir ESD Topr Tstg
120 50 500 -25 ~ +85 -25 ~ +85
mW
μA V ℃ ℃
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Static Electricity or power surge will the Use of anti-electrosatic * glove is recommended when handingdamageLED.LED.devices, a conductive wrist band or must be properly these All equipment and machinery grounded.
Part Selection And Application Information(Ratings at 25℃)
Electrical
CHIP
PART NO
Material
LBD711SBK-XX-PF
common λP λD △λ Vf(v) Iv(mcd) IV-M cathode (nm) (nm) (nm) or anode Typ. Max. Min. Typ. Emitted
Blue
InGaN/SiC
Common Anode
468
470
26
3.5
4.2
10.5
18
2:1
Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ± 15% testing tolerance.
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PART NO. LBD711SBK-XX-PF Page 4/7
Test Condition For Each Parameter
Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Peak Wavelength Dominant Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio
Symbol Vf Iv
Unit volt mcd nm nm nm
Test Condition If=20mA If=30mA If=20mA If=20mA If=20mA Vr=5V
λP λD △λ
Ir IV-M
μA
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PART NO. L BD711SBK-XX-PF Page 5/7
Typical Electro-Optical Characteristics Curve
SBK CHIP
Fig.1 Forward current vs. Forward Voltage
30 25 20 15 10 5 0 1 2 3 4 5
Fig.2 Relative Intensity vs. Forward Current
Forward Current(mA)
1.5
Relative Intensity Normalize @20mA
1.25 1.0 0.75 0.5 0.25 0 0 5 10 15 20 25 30
Forward Voltage(V)
Forward Current(mA)
Fig.3 Forward Current vs. Temperature
Fig.4 Relative Intensity vs. Wavelength
Forward Current@20mA
30 20 10 0 0 25 50 75 100
Relative Intensity@20mA
40
1.0
0.5
0 380
430
480
530
580
630
680
Ambient Temperature( ℃)
Wavelength (nm)
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PART NO. LBD711SBK-XX-PF Page 6/7
Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260° C 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260° C
Temp( ° C) 260 ° C3sec Max
260 °
5° /sec max
120 °
2° /sec max
25 ° 0°
0
Preheat 60 Seconds Max
50
100
150
Time(sec)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LBD711SBK-XX-PF Page 7/7
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
J IS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs
The purpose of this test is the resistance of the device under tropical for hous.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 ℃±5℃ &-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2
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