LHIR9653-00

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SQUARE WITH 4LEADS TYPE LED LAMPS Pb Lead-Free Parts LHIR9653-00 DATA SHEET DOC. NO : REV. DATE : : QW0905- LHIR9653-00 A 08 - Sep. - 2009 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LHIR9653-00 Page 1/5 Package Dimensions CATHODE 7.62±0.5 ANODE 7.62±0.5 2.5±0.5 0.4 4.7±0.5 0.5 3.5±0.5 1.55 5.08± 0.3 5.08 Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Features: 1. High radiant intensity. 2. Suitable for pulsed applications. 3. Low average degradation. Descriptions: The LHIR9653-00series are high power solution grown efficiency Gallium Arsenide infrared emitting diodes encapsulated in water clear plastic T-1 3/4 package individually Device Selection Guide: PART NO LHIR9653-00 MATERIAL GaAIAs/GaAs LENS COLOR Water Clear LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LHIR9653-00 Page 2/5 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol HIR Forward Current Peak Forward Current (300PPS,10 μs Pulse) Power Dissipation Reverse Voltage Electrostatic Discharge Operating Temperature Storage Temperature IF IFP PD Vr ESD Topr Tstg 50 1 100 5 UNIT mA A mW V 2000 -40 ~ +85 -40 ~ +85 V ℃ ℃ Electrical Optical Characteristics (Aa=25℃) PARAMETER Radiant Intensity Aperture Radiant Incidence Peak Emission Wavelength Spectral Line Half Width Forward Voltage Reverse Current Viewing Angle SYMBOL Le Ee Min. 1.0 Typ. 1.8 Max. UNIT mW/sr mW/cm nm nm 2 TEST CONDITION IF=20mA IF=20mA IF=20mA IF=20mA IF=20mA VR=5V 0.143 0.257 850 50 1.2 1.6 100 130 λpeak △λ VF IR 2θ1/2 V μA deg Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The radiant intensity data did not including ± 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LHIR9653-00 Page3/5 Typical Electro-Optical Characteristics Curve HIR CHIP Fig.1 Forward Current vs. Rorward Voltage 1000 Fig.2 Relative Radiant Power vs. Wavelength 1.0 100 10 1 0.1 0.0 Relative Radiant Power Normalize @20mA Forward Current[mA] 0.5 1.0 2.0 3.0 4.0 0.0 800 850 900 950 Forward Voltage[V] Wavelength[nm] Fig.3 Relative Radiant Power vs. Forward DC Current 10.0 Fig.4 Relative Radiant Power vs. Forward Peak Current 10.0 Relative Radiant Power Normalize @20mA 1.0 Relative Radiant Power Normalize @100 mA 1 10 100 1.0 0.1 0.1 10 100 1000 IFDC[mA] IFPK [mA] Fig.5 Forward DC Voltage vs. Temperature 1.2 Fig.6 Relative Radiant Power vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 Forward DC Voltage Normalize @20mA, 25 ℃ 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Relative Radiant Power Normalize @ 20mA, 25 ℃ -20 0 20 40 60 80 100 Ambient Temperature [℃] Ambient Temperature[ ℃] LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LHIR9653-00 Page 4/5 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) Temp( ° C) 260 ° C3sec Max 260 ° 5° /sec max 120 ° 2° /sec max Preheat 25 ° 0° 0 50 100 150 Time(sec) 60 Seconds Max Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LHIR9653-00 Page 5/5 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. J IS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2