LPT3323

NPN SILICON PHOTOTRANSISTOR LED LAMPS LPT3323 SERIES Features . High illumination sensitivity . Stable characteristics . Spectrally and mechanically matched with IR emitter Package Dimension 5.0 5.9 7.6 8.6 Description 0.5 TYP 12.5MIN 1.EMITTER 2.COLLECTOR 1.0MIN 2.3TYP 1 2 The LPT3323 series are silicon nitride passivated NPN planar phototransistors with exceptionally stable characteristics and high illumination sensitivity the cases of LPT3323 are encapsulated in water clear plastic T1 3/4 package individuallt Note:1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted 2.Specifications are subject to change without notice •MAXIMUM RATINGS(Ta=25℃) PARAMETER Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Storage Temperature Lead Soldering Temperature(1.6mm From Body) MAXIMUM RATINGS 100 30 5 -50℃ TO +100℃ -50℃ TO +100℃ 260℃ for 5 seconds UNIT mw V V •ELECTRICAL CHARACTERISTICS(Ta=25℃) PARAMETER Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current SYMBOL V(BR)CEO V(BR)ECO VCE(sat) Tr Tf ICEO Ip(on) 1 2 4 8 DOC. NO : QW0905-LPT3323 REV. : C 5 5 100 2 4 8 Min. 30 5 0.4 Typ. Max. UNIT V V V TEST CONDITION Ic=1mA Ee=0mw/c㎡ IE=100μA Ee=0mw/c㎡ Ic=0.5mA Ee=20mw/c㎡ VCE =30V IC=800μA,RL=1K Ω VCE =10V Ee=0mw/c㎡ VCE =5v Ee=1mw/c㎡ λP=940nm DATE : 18 - Aug - 2005 μs μs nA mA mA mA mA