LRGB3392-A1

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only TRIPLE COLOR LED LAMPS LRGB3392-A1 DATA SHEET DOC. NO : REV. DATE : : QW0905- LRGB3392-A1 A 24 - Apr.- 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LRGB3392-A1 Page 1/6 Package Dimensions 5.0 5.9 7.6 8.6 13.6±0.5 1.5MAX 0.4 0.1 25.0MIN □0.5 TYP 1 234 1.0MIN 1.0MIN 4-1.27TYP 1.0MIN 1.CATHODE RED 2.COMMON ANODE 3.CATHODE BLUE 4.CATHODE GREEN Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LRGB3392-A1 Page 2/6 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol UR Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Electrostatic Discharge Reverse Current @5V Operating Temperature Storage Temperature IF IFP PD ESD Ir Topr Tstg 40 120 120 DGM 30 100 120 150 50 -20 ~ +80 -30 ~ +100 DBK 30 100 120 mA mA mW V UNIT ---10 μA ℃ ℃ Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO MATERIAL Emitted GaAlAs Red COLOR Peak Dominant Spectral wave halfwidth wave length length △λnm λPnm λDnm Forward voltage @20mA(V) Luminous Viewing intensity angle @20mA(mcd) 2 θ 1/2 (deg) Lens 660 518 Min. Typ. Max. Min. Typ. ---525 470 20 36 30 1.5 ---- 2.4 220 450 ---- 3.5 4.0 350 700 ---- 3.5 4.0 160 300 40 50 50 LRGB3392-A1 InGaN/GaN Green White Diffused InGaN/GaN Blue ---- Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LRGB3392-A1 Page 3/6 Typical Electro-Optical Characteristics Curve UR CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 Forward Current(mA) 100 10 1 01 1.0 2.0 3.0 4.0 5.0 Relative Intensity Normalize @20mA 2.5 2.0 1.5 1.0 0.5 0.0 1 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ -40 -20 0 20 40 60 80 100 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Fig.6 Directive Radiation Relative Intensity@20mA 1.0 0° -30 ° 30° 0.5 -60° 60° 0.0 600 650 700 750 100% 75% 50% 25% 0 25% 50% 75% 100% Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LRGB3392-A1 Page 4/6 Typical Electro-Optical Characteristics Curve DGM CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 Forward Current(mA) 100 Relative Intensity Normalize @20mA 1.0 2.0 3.0 4.0 5.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 10 1.0 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ -40 -20 0 20 40 60 80 100 1.1 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.0 0.9 0.8 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength 1.0 Fig.6 Directive Radiation Relative Intensity@20mA 0° -30° 0.5 30 ° -60° 60° 0.0 450 500 550 600 100% 75% 50% 25% 0 25% 50% 75% 100% Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LRGB3392-A1 Page 5/6 Typical Electro-Optical Characteristics Curve DBK CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 1000 Forward Current(mA) 100 10 1 01 1.0 2.0 3.0 4.0 5.0 Relative Intensity Normalize @20mA 2.5 2.0 1.5 1.0 0.5 0.0 1 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Forward Current(mA) Fig.4 Relative Intensity vs. Temperature Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ -40 -20 0 20 40 60 80 100 1.2 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Fig.6 Directive Radiation Relative Intensity@20mA 1.0 0° -30 ° 30° 0.5 -60 ° 60 ° 0.0 400 450 500 550 100% 75% 50% 25% 0 25% 50% 75% 100% Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LRGB3392-A1 Page 6/6 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2