LSBKS9SEF3393

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DURL COLOR LED LAMPS LSBKS9SEF3393 DATA SHEET DOC. NO : REV. DATE : : QW0905-LSBKS9SEF3393 A 13 - Dec. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSBKS9SEF3393 Page 1/5 Package Dimensions 5.0 5.9 7.6 8.6 10.5±0.5 1.5MAX □0.5 TYP 9SEF 18.0MIN SBKS 1 2.0MIN 2 3 2.0MIN 1 23 1.ANODE ORANGE 2.COMMON CATHODE 3.ANODE BLUE 2.54TYP 2.54TYP Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Directivity Radiation 0° -30° 30° -60° 60° 100% 75% 50% 25% 0 25% 50% 75% 100% LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSBKS9SEF3393 Page 2/5 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol SBKS Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Electrostatic Discharge( * ) Operating Temperature Storage Temperature Soldering Temperature IF IFP PD Ir ESD Topr Tstg Tsol 30 100 120 50 500 -20 ~ +80 -30 ~ +100 Max 260 ℃ for 5 sec Max (2mm from body) 9SEF 30 60 75 10 2000 mA mA mW UNIT μA V ℃ ℃ Static Electricity or power surge will the Use of anti-electrosatic * glove is recommended when handingdamageLED.LED.devices, a conductive wrist band or must be properly these All equipment and machinery grounded. Typical Electrical & Optical Characteristics (Ta=25 ℃) COLOR PART NO MATERIAL Emitted InGaN/SiC Blue LSBKS9SEF3393 Forward Dominant Spectral voltage wave halfwidth @20mA(V) length △λ nm λDnm Luminous intensity @20mA(mcd) Viewing angle 2θ 1/2 (deg) Lens 475 Water Clear Min. Typ. Max. Min. Typ. 26 17 ---- 3.5 4.2 350 550 40 40 AlGaInP Orange 605 1.7 ---- 2.6 1100 2200 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSBKS9SEF3393 Page 3/5 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.1 Forward current vs. Forward Voltage 30 25 20 15 10 5 0 1 2 3 4 5 Fig.2 Relative Intensity vs. Forward Current Forward Current(mA) 1.5 Relative Intensity Normalize @20mA 1.25 1.0 0.75 0.5 0.25 0 0 5 10 15 20 25 30 Forward Voltage(V) Forward Current(mA) Fig.3 Forward Current vs. Temperature Fig.4 Relative Intensity vs. Wavelength Forward Current@20mA 30 20 10 0 0 25 50 75 100 Relative Intensity@20mA 40 1.0 0.5 0 380 430 480 530 580 630 680 Ambient Temperature( ℃) Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSBKS9SEF3393 Page4/5 Typical Electro-Optical Characteristics Curve 9SEF CHIP Fig.1 Forward current vs. Forward Voltage 1000 Fig.2 Relative Intensity vs. Forward Current 3.0 Forward Current(mA) 100 10 1.0 Relative Intensity Normalize @20mA 1.0 1.5 2.0 2.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSBKS9SEF3393 Page 5/5 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2