LSD511-22-XX

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only SINGLE DIGIT LED DISPLAY (0.56 Inch) LSD511/22-XX DATA SHEET DOC. NO REV. DATE : : QW0905- LSD511/22-XX A : 19 - Jan - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD511/22-XX Page 1/7 Package Dimensions 12.5 (0.492") 8.0 (0.315") A F 14.2 (0.56") G E D B 19.0 (0.748") 15.2 (0.598") C DP LSD511/22-XX LIGITEK ψ1.6(0.063") 0.51 TYP. 2.54X2 2.3 2.3 4.2± 0.5 PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25(0.01") unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD511/22-XX Page 2/7 Internal Circuit Diagram LSD5112-XX 3,8 ABCDE F G DP 7 6 4 2 1 9 10 5 LSD5122-XX 3,8 ABCDE F G DP 7 6 4 2 1 9 10 5 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD511/22-XX Page 3/7 Electrical Connection PIN NO. 1 2 3 4 5 6 7 8 9 10 Anode E Anode D LSD5112-XX PIN NO. 1 2 3 4 5 6 7 8 9 10 LSD5122-XX Cathode E Cathode D Common Anode Cathode C Cathode DP Cathode B Cathode A Common Anode Cathode F Cathode G Common Cathode Anode C Anode DP Anode B Anode A Common Cathode Anode F Anode G LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD511/22-XX Page 4/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol G Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Operating Temperature Storage Temperature IF 30 mA UNIT IFP 120 mA PD Ir Topr Tstg 100 10 -25 ~ +85 -25 ~ +85 mW μA ℃ ℃ Solder Temperature 1-16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) Electrical PART NO common cathode or anode Material Emitted CHIP Common Cathode GaP Green Common Anode λP (nm) △λ (nm) Min. Vf(v) Iv(mcd) Typ. IV-M Typ. Max. Min. LSD5112-XX 565 30 1.7 2.1 2.6 2.35 4.5 2:1 LSD5122-XX Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD511/22-XX Page 5/7 Test Condition For Each Parameter Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Peak Emission Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio Symbol Vf Iv Unit volt mcd nm nm Test Condition If=20mA If=10mA If=20mA If=20mA Vr=5V λP △λ Ir IV-M μA LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD511/22-XX Page 6/7 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 1000 Forward Current(mA) 100 Relative Intensity Normalize @20mA 2.0 3.0 4.0 5.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 1.0 0.1 1.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25℃ 1.2 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Fig.6 Directive Radiation Relative Intensity@20mA 1.0 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSD511/22-XX Page 7/7 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. J IS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2