LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
LOW CURRENT DURL COLOR LED LAMPS
Pb
Lead-Free Parts
LSEFVG3393/T-PF
DATA SHEET
DOC. NO : REV. DATE :
QW0905-LSEFVG3393/T-PF A
: 17 - Jun. - 2006
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LSEFVG3393/T-PF Page 1/6
Package Dimensions
5.0
5.9
7.6 8.6 10.5± 0.5 1.5 MAX
VG
SEF
□0.5 TYP
18.0MIN
1 2 3
+ 1
2
+ 3
2.0MIN 2.0MIN 2.54TYP 2.54TYP
1.ANODE GREEN 2.COMMON CATHODE 3.ANODE ORANGE
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
Directivity Radiation
0° -30° 30°
-60°
60°
100% 75% 50%
25%
0
25% 50% 75% 100%
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PART NO. LSEFVG3393/T-PF Page 2/6
Absolute Maximum Ratings at Ta=25 ℃
Ratings Parameter Symbol SEF Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Electrostatic Discharge( * ) Operating Temperature Storage Temperature IF IFP PD Ir ESD Topr Tstg 2000 -40 ~ +85 -40 ~ +100 50 90 120 10 ---VG 30 120 100 mA mA mW UNIT
μA
V
℃ ℃
Static Electricity or power surge will the Use of anti-electrosatic *glove is recommended when handingdamageLED.LED.devices, a conductive wrist band or must be properly these All equipment and machinery grounded.
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
MATERIAL Emitted AlGaInP Orange
COLOR
Luminous Viewing Peak Dominant Spectral Forward intensity wave angle wave halfwidth voltage length length △λnm @ 2 mA(V) @2mA(mcd) 2θ 1/2 λPnm λDnm (deg)
Lens --Water Clear 565 605 --17 30
Min. Max. Min. Typ. 1.8 2.2 1.8 2.2 350 21 700 38 40 40
LSEFVG3393/T-PF GaP Green
Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ± 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LSEFVG3393/T-PF Page3/6
Typical Electro-Optical Characteristics Curve
SEF CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
3.0
1000
Forward Current(mA)
100
Relative Intensity Normalize @20mA
2.5 2.0 1.5 1.0 0.5 0.0
10 1.0
0.1 1.0 1.5 2.0 2.5 3.0
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
Forward Voltage@20mA Normalize @25℃
Relative Intensity@20mA Normalize @25℃
-40 -20 0 20 40 60 80 100
1.2
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.1 1.0
0.9 0.8
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 500 550 600 650
Wavelength (nm)
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PART NO. LSEFVG3393/T-PF Page 4/6
Typical Electro-Optical Characteristics Curve
VG CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
3.5
1000
Forward Current(mA)
100
Relative Intensity Normalize @20mA
3.0 2.5 2.0 1.5 1.0 0.5 0.0
10 1.0
0.1 1.0 2.0 3.0 4.0 5.0
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
Forward Voltage@20mA Normalize @25℃
1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100
Relative Intensity@20mA Normalize @25℃
1.2
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
Fig.6 Directive Radiation
Relative Intensity@20mA
1.0
0.5
0.0 500 550 600 650
Wavelength (nm)
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PART NO. LSEFVG3393/T-PF Page 5/6
Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to body)
2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body)
Temp(° C) 260° C3sec Max
260°
5° /sec max
120°
2° /sec max Preheat 60 Seconds Max
25° 0° 0
50
100
150
Time(sec)
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PART NO. LSEFVG3393/T-PF Page 6/6
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of high temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
J IS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs
The purpose of this test is the resistance of the device under tropical for hours.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2
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