LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
HIGH VOLTAGE LED LAMPS
Pb
Lead-Free Parts
LSEG75363/HV5-PF
DATA SHEET
DOC. NO : REV. DATE : :
QW0905- LSEG75363/HV5-PF A 25 - May - 2007
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PART NO. LSEG75363/HV5-PF Page 1/6
Package Dimensions
3.4 1.5
6.0
+Vcc
IF
Vcc=5Volts
1.5MAX
RL
RL=240ohms ±20%
G SE
□0.5 TYP
25.0MIN
VF
IF= Vcc-VF RL
1.0MIN
1
2
2.54TYP
1
2
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
Directivity Radiation
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PART NO. LSEG75363/HV5-PF Page 2/6
Absolute Maximum Ratings at Ta=25 ℃
Ratings Parameter Symbol SE Forward voltage Reverse voltage Operating Temperature Storage Temperature VF Vr Topr Tstg 5 8 -40 ~ +85 -40 ~ +100 G 5 8 V V UNIT
℃ ℃
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
MATERIAL Emitted
GaAsP/GaP Orange
COLOR
Peak Spectral Forward Luminous Reverse Viewing intensity current angle wave halfwidth current (mA) (mcd) (uA) 2θ 1/2 length △λ nm @ 5V @5V VR= 8V (deg) λPnm
Lens 610
Water Clear
Min. Max. Min. Typ. 45 30 12 12 20 1.2 4.5 20 4.5 12
Max. 100 100 78 78
LSEG75363/HV5-PF
GaP
Green
565
Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LSEG75363/HV5-PF Page3/6
Typical Electro-Optical Characteristics Curve
SE CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
1000
3.0
Forward Current(mA)
Relative Intensity Normalize @20mA
100
2.5 2.0 1.5 1.0 0.5 0.0
10
1.0 0.1 1.0 2.0 3.0 4.0 5.0
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
1.2
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0
Forward Voltage@20mA Normalize @25℃
Relative Intensity@20mA Normalize @25℃
-40 -20 0 20 40 60 80 100
2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.1
1.0
0.9
0.8
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
1.0
Relative Intensity@20mA
0.5
0.0 550 600 650 700 750
Wavelength (nm)
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PART NO. LSEG75363/HV5-PF Page 4/6
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
3.5
1000
Forward Current(mA)
100
Relative Intensity Normalize @20mA
1.0 2.0 3.0 4.0 5.0
3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000
10 1.0
0.1
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
Forward Voltage@20mA Normalize @25℃
1.1 1.0
0.9 0.8 -40 -20 0 20 40 60 80 100
Relative Intensity@20mA Normalize @25℃
1.2
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
Fig.6 Directive Radiation
Relative Intensity@20mA
1.0
0.5
0.0 500 550 600 650
Wavelength (nm)
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PART NO. LSEG75363/HV5-PF Page 5/6
Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body)
2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body)
Temp(° C) 260° C3sec Max
260°
5° /sec max
120°
2° /sec max Preheat 60 Seconds Max
25° 0° 0
50
100
150
Time(sec)
Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above.
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PART NO. LSEG75363/HV5-PF Page 6/6
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of high temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs
The purpose of this test is the resistance of the device under tropical for hours.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2
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