LSIR3333-PF

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only INFRARED EMITTING DIODES Pb Lead-Free Parts LSIR3333-PF DATA SHEET DOC. NO : REV. DATE : : QW0905- LSIR3333-PF A 04 - Mar. - 2008 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSIR3333-PF Page 1/7 Package Dimensions 5.0 5.9 7.6 8.6 1.5MAX 25.0MIN 0.5 TYP 1.0MIN 2.54TYP + - Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Features: 1. High radiant intensity. 2. Suitable for pulsed applications. 3. Low average degradation. Descriptions: The LSIR3333-PFseries are high power solution grown efficiency Gallium Arsenide infrared emitting diodes encapsulated in water clear plastic T-1 3/4 package individually Device Selection Guide: PART NO LSIR3333-PF MATERIAL GaAIAs/GaAs LENS COLOR Water Clear LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSIR3333-PF Page 2/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol SIR Power Dissipation Peak Forward Current (300PPS,10 μs Pulse) Forward Current Reverse Voltage Electrostatic Discharge Operating Temperature Storage Temperature PD IFP IF Vr ESD Topr Tstg 100 1 50 5 UNIT mW A mA V 2000 -40 ~ +85 -40 ~ +85 V ℃ ℃ Electrical Optical Characteristics (Aa=25℃) PARAMETER Radiant Intensity Aperture Radiant Incidence Peak Emission Wavelength Spectral Line Half Width Forward Voltage Reverse Current Viewing Angle SYMBOL Le Ee Min. 8.0 1.0 Typ. 12 1.7 880 50 1.4 Max. UNIT mW/sr mW/cm nm nm 2 TEST CONDITION IF=20mA IF=20mA IF=20mA IF=20mA IF=20mA VR=5V λpeak △λ VF IR 2θ1/2 1.7 100 V μA deg 20 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The radiant intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSIR3333-PF Page 3/7 Typical Electro-Optical Characteristics Curve SIR CHIP Fig.1 Forward Current vs. Rorward Voltage 1000 Fig.2 Relative Radiant Intensity vs. Wavelength 1.0 100 10 1 0.1 0.5 Relative Radiant Intensity Normalize @20mA Forward Current(mA) 0.5 1.0 1.5 2.0 2.5 0.0 750 800 850 900 950 1000 1050 Forward Voltage(V) Wavelength(nm) Fig.3 Relative Radiant Power vs. Forward DC Current 10.0 Fig.4 Relative Radiant Power vs. Forward Peak Current 10.0 Relative Radiant Power Normalize @20mA Relative Radiant Power Normalize @100 mA 10 100 1.0 1.0 0.1 1 0.1 10 100 1000 IFDC (mA) IFPK (mA) Fig.5 Forward DC Voltage vs. Temperature Forward DC Voltage @20 mA Normalize @ 25 ℃ 1.2 Fig.6 Relative Radiant Power vs. Temperature 3.0 Relative Radiant Power Normalize @ 20mA,25℃ -20 0 20 40 60 80 100 2.5 2.0 1.5 1.0 0.5 0.0 -40 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature [℃] Ambient Temperature[ ℃] LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LSIR3333-PF Page 4/7 Storage time: 1.The operation of Temperatures and RH are : 5 ℃~35℃,RH