LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
BIPOLAR TYPE LED LAMPS
Pb
Lead-Free Parts
LSR9UG3333-W51-PF
DATA SHEET
DOC. NO : REV. DATE : :
QW0905- LSR9UG3333-W51-PF A 30 - Apr. - 2006
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PART NO. LSR9UG3333-W51-PF Page 1/6
Package Dimensions
5.0 5.9
7.6
8.6
15±2.0
Green Thermo-shrinking tube
295±5.0
SR
9UG 1 2
12 Note : 1.All dimension are in millimeter tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
Directivity Radiation
0° -30° 30°
-60 °
60°
100% 75% 50%
25%
0
25% 50% 75% 100%
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PART NO. LSR9UG3333-W51-PF Page 2/6
Absolute Maximum Ratings at Ta=25 ℃
Ratings Parameter Symbol SR Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Electrostatic Discharge( * ) Operating Temperature Storage Temperature IF IFP PD Ir ESD Topr Tstg 30 100 100 10 2000 -40 ~ +85 -40 ~ +100 9UG 30 60 75 mA mA mW UNIT
μA
V
℃ ℃
Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded.
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
MATERIAL
COLOR Lens
Forward Peak Dominant Spectral voltage wave halfwidth wave length △λnm @ 20mA(V) length λPnm λDnm
Luminous intensity @20mA(mcd)
Viewing angle 2θ1/2 (deg)
Emitted GaAlAs
LSR9UG3333-W51-PF
Min. Max. Min. Typ. 660 --574 20 20 1.5 1.7 2.4 2.6 160 300 20 20
Red
Water Clear Green
AlGaInP
---
700 1100
Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance.
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Typical Electro-Optical Characteristics Curve
SR CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
3.0
1000
Forward Current(mA)
100
Relative Intensity Normalize @20mA
2.5 2.0 1.5 1.0 0.5 0.0
10 1.0
0.1 1.0 2.0 3.0 4.0 5.0
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
Forward Voltage@20mA Normalize @25℃
1.1 1.0
0.9 0.8 -40 -20 0 20 40 60 80 100
Relative Intensity@20mA Normalize @25℃
1.2
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 600 650 700 750
Wavelength (nm)
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PART NO. LSR9UG3333-W51-PF Page4/6
Typical Electro-Optical Characteristics Curve
9UG CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
1000
3.0
Forward Current(mA)
100
Relative Intensity Normalize @20mA
2.5 2.0 1.5 1.0 0.5 0
10
1.0
0.1 1.0 2.0 3.0 4.0 5.0
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
Relative Intensity @20mA Normalize @25℃
-40 -20 0 20 40 60 80 100
Forward Voltage@20mA Normaliz @25℃
1.2
3.0 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 100
1.1 1.0 0.9
0.8
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity @20mA
1.0
0.5
0 500 550 600 650
Wavelength (nm)
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PART NO. LSR9UG3333-W51-PF Page 5/6
Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to body)
2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body)
Temp( ° C) 260° C3sec Max
260 °
5° /sec max
120°
2° /sec max Preheat 60 Seconds Max
25 ° 0° 0
50
100
150
Time(sec)
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Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of high temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs
The purpose of this test is the resistance of the device under tropical for hours.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 ℃±5 ℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2
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