LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
DURL COLOR LED LAMPS
Pb
Lead-Free Parts
LSRFDGM3392
DATA SHEET
DOC. NO : REV. DATE :
QW0905- LSRFDGM3392 A
: 15 - Sep. - 2007
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PART NO. LSRFDGM3392 Page 1/6
Package Dimensions
5.0
5.9
7.6 8.6 10.5± 0.5 1.5 MAX
DGM
SRF
□0.5 TYP
18.0MIN
1 2 3 1 2 3 1.ANODE GREEN 2.COMMON CATHODE 3.ANODE RED
2.0MIN 2.0MIN 2.54TYP 2.54TYP
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
Directivity Radiation
0° -30° 30°
-60°
60°
100% 75% 50%
25%
0
25%
50% 75% 100%
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PART NO. LSRFDGM3392
Page 2/6
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Parameter
Symbol
SRF DGM 30 100 120 50 150 -20 ~ +80 -30 ~ +100
UNIT
Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Electrostatic Discharge Operating Temperature Storage Temperature
IF IFP PD Ir ESD Topr Tstg
30 90 75 10 2000
mA mA mW
μA V ℃ ℃
Typical Electrical & Optical Characteristics (Ta=25 ℃)
COLOR PART NO MATERIAL Emitted AlGaInP LSRFDGM3392 InGaN/GaN Green Red White Diffused Lens
Peak Dominant Spectral wave wave halfwidth length △λ nm length λPnm λDnm
Forward voltage @20mA(V)
Viewing angle @20mA(mcd) 2θ 1/2 (deg) Typ. 300 70 70
Luminous intensity
Min. Typ. Max. Min. ---518 630 525 20 36 1.5 ----2.4 160
3.5 4.0 1100 1800
Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance.
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PART NO. LSRFDGM3392 Page3/6
Typical Electro-Optical Characteristics Curve
SRF CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
1000
3.5
Forward Current(mA)
100
Relative Intensity Normalize @20mA
2.0 2.5 3.0
3.0 2.5 2.0 1.5 1.0 0.5 0
10 1.0
0.1 1.0 1.5
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
1.2
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0
Forward Voltage@20mA Normalize @25℃
Relative Intensity@20mA Normalize@25℃
-40 -20 -0 20 40 60 80 100
2.5 2.0 1.5 1.0 0.5 0 -40 -20 -0 20 40 60 80 100
1.1
1.0
0.9 0.8
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0 550 600 650 700
Wavelength (nm)
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PART NO. LSRFDGM3392 Page4/6
Typical Electro-Optical Characteristics Curve
DGM CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
1000
3.0
Forward Current(mA)
100
Relative Intensity Normalize @20mA
2.5 2.0 1.5 1.0 0.5 0.0
10
1.0
0.1 1.0 2.0 3.0 4.0 5.0
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
1.2
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0
Forward Voltage@20mA Normalize @25℃
Relative Intensity@20mA Normalize @25℃
-40 -20 0 20 40 60 80 100
1.1
2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
1.0
0.9 0.8
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Fig.5 Relative Intensity vs. Wavelength
1.0
Relative Intensity@20mA
0.5
0.0 450 500 550 600
Wavelength (nm)
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PART NO. LSRFDGM3392 Page 5/6
Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350 ° C Max Soldering Time:3 Seconds Max(One time only) Distance:2mm Min(From solder joint to body)
2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 120seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body)
Temp(° C) 260° C3sec Max
260°
5° /sec max
120°
2° /sec max Preheat 120 Seconds Max
25° 0° 0
100
200
250
Time(sec)
Note: 1.Wave solder should not be made more than one time. 2.You can just only select one of the soldering conditions as above.
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PART NO. LSRFDGM3392 Page 6/6
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of high temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs
The purpose of this test is the resistance of the device under tropical for hours.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 ℃±5 ℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2
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