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LVIR3331-PF

LVIR3331-PF

  • 厂商:

    LIGITEK

  • 封装:

  • 描述:

    LVIR3331-PF - INFRARED EMITTING DIODES - LIGITEK electronics co., ltd.

  • 数据手册
  • 价格&库存
LVIR3331-PF 数据手册
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only INFRARED EMITTING DIODES Pb Lead-Free Parts LVIR3331-PF DATA SHEET DOC. NO : REV. DATE : : QW0905- LVIR3331-PF A 20 - Oct. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3331-PF Page 1/7 Package Dimensions 5.0 5.9 7.6 8.6 1.5MAX 25.0MIN □0.5 TYP 1.0MIN 2.54TYP + - Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Features: 1. High radiant intensity. 2. Suitable for pulsed applications. 3. Low average degradation. Descriptions: The LVIR3331-PFseries are high power solution grown efficiency Gallium Arsenide infrared emitting diodes encapsulated in blue transparent plastic T-1 3/4 package individually Device Selection Guide: PART NO LVIR3331-PF MATERIAL GaAIAs/GaAs LENS COLOR Blue Transparent LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3331-PF Page 2/7 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol VIR Forward Current Peak Forward Current (300PPS,10 μs Pulse) Power Dissipation Reverse Voltage Electrostatic Discharge Operating Temperature Storage Temperature IF IFP PD Vr ESD Topr Tstg 50 1 100 5 UNIT mA A mW V 2000 -40 ~ +85 -40 ~ +85 V ℃ ℃ Electrical Optical Characteristics (Aa=25℃) PARAMETER Radiant Intensity Aperture Radiant Incidence Peak Emission Wavelength Spectral Line Half Width Forward Voltage Reverse Current Viewing Angle SYMBOL Le Ee Min. 10 1.43 Typ. 17 2.43 940 50 1.2 Max. UNIT mW/sr mW/cm nm nm 2 TEST CONDITION IF=20mA IF=20mA IF=20mA IF=20mA IF=20mA VR=5V λpeak △λ VF IR 2θ1/2 1.6 100 V μA deg 20 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The radiant intensity data did not including ± 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3331-PF Page3/7 Typical Electro-Optical Characteristics Curve VIR CHIP Fig.1 Forward Current vs. DC Forward Voltage 1000 Fig.2 Relative Radian Intensity vs.wavelength Relative Radiant Intensity Normalize @20mA 1.0 Forward Current [mA] 100 10 0.5 1.0 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 800 850 900 950 1000 1050 1100 Forward Voltage[V] Fig 3. Relative Radiant Power vs. Forward Peak Current Relative Radiant Power Normalized @ 20mA 10.0 Wavelength[nm] Fig.4 Relative Radiant Power vs. Forward Peak Current 10.0 1.0 Relative Radiant Power Normalized @ 100 mA 1.0 10 100 1.0 0.1 0.1 10 100 1000 IFDC [mA] IFPK [mA] Fig.5 Forward DC Voltage vs. Temperature Forw ard DC Voltage @ 20 mA Normalize @ 25℃ 1.2 Fig.6 Relative Radiant Power vs. Temperature Relative Radiant Power @ 20mA, Normalize @ 25 ℃ 3.0 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature [ ℃] Ambient Temperature [ ℃] LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LVIR3331-PF Page 4/7 Storage time: 1.The operation of Temperatures and RH are : 5 ℃~35℃,RH
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