LYG3393-S108

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only DUAL COLOR LED LAMPS LYG3393/S108 DATA SHEET DOC. NO : REV. DATE : : QW0905- LYG3393/S108 A 24 - Dec.- 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LYG3393/S108 Page 1/5 Package Dimensions 5.0 5.9 7.6 8.6 10.5±0.5 G Y 1.5MAX 5.0±0.5 1 23 1 2.54TYP 2 3 2.54TYP 1.CATHODE GREEN 2.COMMON ANODE 3.CATHODE YELLOW Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Directivity Radiation 0° -30° 30° -60° 60° 100% 75% 50% 25% 0 25% 50% 75% 100% LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LYG3393/S108 Page 2/5 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol Y Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Operating Temperature Storage Temperature IF IFP PD Ir Topr Tstg 20 80 60 10 -40 ~ +85 -40 ~ +100 G 30 120 100 mA mA mW UNIT μA ℃ ℃ Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO MATERIAL Emitted GaAsP/GaP Yellow COLOR Peak wave length λPnm Spectral halfwidth Δλnm Forward voltage @20mA(V) Luminous intensity @ 10mA(mcd) Viewing angle 2θ 1/2 (deg) Lens 585 Water Clear 565 35 30 Min. 1.7 1.7 Max. 2.6 2.6 Min. 0.5 0.5 Typ. 1.0 1.2 40 40 LYG3393/S108 GaP Green Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ± 15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO.LYG3393/S108 Page 3/5 Typical Electro-Optical Characteristics Curve Y CHIP Fig.1 Forward current vs. Forward Voltage 1000 Fig.2 Relative Intensity vs. Forward Current 3.0 Forward Current(mA) 100 10 1.0 Relative Intensity Normalize @20mA 1.0 2.0 3.0 4.0 5.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ -40 -20 0 20 40 60 80 100 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 500 550 600 650 700 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LYG3393/S108 Page4/5 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage 1000 Fig.2 Relative Intensity vs. Forward Current 3.5 Forward Current(mA) 100 10 1.0 Relative Intensity Normalize @20mA 1.0 2.0 3.0 4.0 5.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ 1.1 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength 1.0 Relative Intensity@20mA 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LYG3393/S108 Page 5/5 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2