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LYSBKS2063-R1

LYSBKS2063-R1

  • 厂商:

    LIGITEK

  • 封装:

  • 描述:

    LYSBKS2063-R1 - ROUND TYPE LED LAMPS - LIGITEK electronics co., ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
LYSBKS2063-R1 数据手册
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only ROUND TYPE LED LAMPS Pb Lead-Free Parts LYSBKS2063/R1 DATA SHEET DOC. NO : REV. DATE : : QW0905- LYSBKS2063/R1 A 18 - Mar. - 2006 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LYSBKS2063/R1 Page 1/6 Package Dimensions 3.0 4.0 4.2 5.2 1.5MAX SBKS 25.0MIN Y 1 2 □0.5 TYP 1 2 1.0MIN 2.54TYP Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. Directivity Radiation 0° -30° 30° -60° 60° 100% 75% 50% 25% 0 25% 50% 75% 100% LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LYSBKS2063/R1 Page 2/6 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol Y Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Electrostatic Discharge( * ) Operating Temperature Storage Temperature IF IFP PD Ir ESD Topr Tstg 20 80 60 10 ---20 ~ +80 -30 ~ +100 SBKS 30 100 120 50 500 mA mA mW UNIT μA V ℃ ℃ Static Electricity or power surge will the Use of anti-electrosatic * glove is recommended when handingdamageLED.LED.devices, a conductive wrist band or must be properly these All equipment and machinery grounded. Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO MATERIAL COLOR Lens Peak Dominant Spectral wave wave halfwidth length length △λnm λPnm λDnm Forward voltage @20mA(V) Luminous Viewing intensity angle @20mA(mcd) 2 θ 1/2 (deg) Emitted GaAsP/GaP Yellow LYSBKS2063/R1 Min. Typ. Max. Min. 585 ---475 35 26 1.7 ------3.5 2.6 4.2 15 38 Typ. 28 65 38 38 Water Clear InGaN/SiC Blue ---- Note : 1.The forward voltage data did not including ± 0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LYSBKS2063/R1 Page3/6 Typical Electro-Optical Characteristics Curve Y CHIP Fig.1 Forward current vs. Forward Voltage 1000 Fig.2 Relative Intensity vs. Forward Current 3.0 Forward Current(mA) 100 10 1.0 Relative Intensity Normalize @20mA 1.0 2.0 3.0 4.0 5.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 500 550 600 650 700 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LYSBKS2063/R1 Page 4/6 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.1 Forward current vs. Forward Voltage 30 25 20 15 10 5 0 1 2 3 4 5 Fig.2 Relative Intensity vs. Forward Current Forward Current(mA) 1.5 Relative Intensity Normalize @20mA 1.25 1.0 0.75 0.5 0.25 0 0 5 10 15 20 25 30 Forward Voltage(V) Forward Current(mA) Fig.3 Forward Current vs. Temperature Fig.4 Relative Intensity vs. Wavelength Forward Current@20mA 30 20 10 0 0 25 50 75 100 Relative Intensity@20mA 40 1.0 0.5 0 380 430 480 530 580 630 680 Ambient Temperature( ℃) Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LYSBKS2063/R1 Page 5/6 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to body) 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to body) Temp(° C) 260° C3sec Max 260° 5° /sec max 120° 2° /sec max Preheat 60 Seconds Max 25° 0° 0 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LYSBKS2063/R1 Page 6/6 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5 ℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5 ℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5 ℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5 ℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2
LYSBKS2063-R1
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器。

2. 器件简介:该器件是意法半导体生产的高性能微控制器,具有多种通信接口和外设,适用于多种嵌入式应用。

3. 引脚分配:该器件共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考引脚图。

4. 参数特性:工作电压为2.0V至3.6V,工作频率最高72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:包括GPIO、ADC、定时器、通信接口(UART、SPI、I2C)等模块的详细介绍。

6. 应用信息:适用于工业控制、医疗设备、智能家居等多种应用场景。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm。
LYSBKS2063-R1 价格&库存

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