LS5905 LS5906 LS5907 LS5908 LS5909
Linear Integrated Systems
FEATURES
LOW DRIFT ULTRA LOW LEAKAGE LOW PINCHOFF |∆VGS1-2 /∆T|= 5µV/°C max. IG = 150fA TYP. VP= 2V TYP.
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature
-65° to +150°C +150°C D1
S1
G2
G1
3
5
S2
Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 40V -VGSS -VDSO -IG(f) -IG Drain to Source Voltage Gate Forward Current Gate Reverse Current 40V 10mA 10µA
D1 2 D2 S1 G1 S2
6 D2
1
7 G2
Maximum Power Dissipation Device Dissipation @ Free Air - Total
22 X 20 MILS 40mW @ +125°C
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS5906 LS5907 LS5908 LS5909 LS5905 5 10 20 40 40 |∆VGS1-2 /∆T| max. Drift vs. Temperature |VGS1-2| max. -IGmax. -IGmax. -IGSSmax. -IGSSmax. SYMBOL BVGSS BVGGO Yfss Yfs |Yfs1-2/Yfs| IDSS |IDSS1-2/IDSS| VGS(off) or VP VGS IGGO Offset Voltage Operating High Temperature At Full Conduction High Temperature CHARACTERISTICS Breakdown Voltage Gate-to-Gate Breakdown TRANSCONDUCTANCE Full Conduction Typical Operation Mismatch DRAIN CURRENT Full Conduction Mismatch at Full Conduction GATE VOLTAGE Pinchoff Voltage Operating Range GATE CURRENT Gate-to-Gate Leakage 5 1 1 2 5 MIN. 40 40 70 50 -60 -0.6 --5 1 1 2 5 TYP. 60 -300 100 1 400 2 2 -1 10 1 1 2 5 MAX. --500 200 5 1000 5 4.5 4 -15 1 1 2 5 UNITS V V µmho µmho % µA % V V pA 15 3 3 5 10
UNITS CONDITIONS µV/°C VDG= 10V, ID= 30µA mV pA nA pA nA TA= +125°C VDS= 0V TA= +125°C VDG=10V
TA=-55°C to +125°C
ID= 30µA
VGS= 20V
CONDITIONS VDS= 0 ID= 1nA IG= 1nA VDG= 10V VDG= 10V ID= 0 VGS= 0 ID= 30µA I S= 0 f= 1kHz f= 1kHz
VDG= 10V
VGS= 0
VDS= 10V VDS= 10V VGG=20V
ID= 1nA ID= 30µA
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
SYMBOL YOSS YOS |YOS1-2| CMR CMR
CHARACTERISTICS OUTPUT CONDUCTANCE Full Conduction Operating Differential COMMON MODE REJECTION -20 log |∆VGS1-2/∆VDS| -20 log |∆VGS1-2/∆VDS| NOISE Figure Voltage CAPACITANCE Input Reverse Transfer Drain-to-Drain
MIN. ----
TYP. -0.1 0.01
MAX. UNITS 5 0.1 0.1 µmho µmho µmho
CONDITIONS VDG= 10V VDG= 10V VGS= 0
ID= 30µA
---
90 90
---
dB dB
∆VDS= 10 to 20V ∆VDS= 5 to 10V VDS= 10V f= 100Hz VDG= 10V NBW= 1Hz VDS= 10V VDS= 10V VDG= 20V
ID= 30µA ID= 30µA VGS= 0 RG= 10MΩ NBW= 6Hz ID= 30µA f= 10Hz
NF en
---
-20
1 70
dB nV/√Hz
CISS CRSS CDD
----
----
3 1.5 0.1
pF pF pF
VGS= 0 VGS= 0 ID= 30µA
f= 1MHz f= 1MHz
TO-71
Six Lead
0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115
TO-78
0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100
P-DIP
0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX. S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2
0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045
2 34 1 5 8 76
6 LEADS
0.019 DIA. 0.016 0.100
0.500 MIN.
0.050
234 1 8 5 6 7
SOIC
0.150 (3.81) 0.158 (4.01)
0.100
45° 0.046 0.036
45° 0.048 0.028 0.028 0.034
0.188 (4.78) 0.197 (5.00)
S1 D1 SS G1
1 2 3 4
8 7 6 5
G2 SS D2 S2
0.228 (5.79) 0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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