LSIT124

IT124 Linear Integrated Systems SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) IC Collector-Current 10mA C1 C2 E1 3 5 E2 B1 2 6 B2 Maximum Temperatures Storage Temperature Range Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor -65°C to +200°C +150°C ONE SIDE 250mW 2.3mW/°C BOTH SIDES 500mW 4.3mW/°C 1 C1 B1 E1 E2 B2 7 C2 26 X 29 MILS BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS IT124 Collector-Base Breakdown Voltage 2 BVCBO BVCEO BVEBO BVCCO hFE hFE VCE(SAT) ICBO IEBO COBO CC1C2 IC1C2 fT NF Collector to Emitter Voltage Emitter-Base Breakdown Voltage Collector to Collector Voltage DC Current Gain DC Current Gain Collector Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Output Capacitance Collector to Collector Capacitance Collector to Collector Leakage Current Current Gain Bandwidth Product Narrow Band Noise Figure 2 6.2 100 1500 1500 0.5 100 100 2 2 250 100 3 MIN. MIN. MIN. MIN. MIN. MIN. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX. UNITS V V V V CONDITIONS IC = 10µA IC = 10µA IE = 10µA IC = 1µA IC = 10µA IC = 10µA IE = 0 IB = 0 IC = 0 IE = 0 VCE = 1V VCE = 1V VCB = 1V VEB = 3V VCB = 1V NOTE 2 V pA pA pF pF pA MHz dB IC = 1mAIB = 0.1 mA IE = 0 IC = 0 IE = 0 VCC = 0 VCC = ±50V VCE = 1V VCE = 3V f=1KHz RG = 10 KΩ BW = 200Hz IC = 10µA IC = 100µA Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261 MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS IT124 Base Emitter Voltage Differential 2 |VBE1-VBE2| 5 ∆|(VBE1-VBE2)|/∆T |IB1- IB2| Base Emitter Voltage Differential Change with Temperature Base Current Differential 5 15 0.6 TYP. MAX. TYP. MAX. MAX. UNITS mV mV µV/°C µV/°C nA CONDITIONS IC = 10 µA IC = 10 µA to IC = 10µA VCE = 1V VCE = 1V VCE = 1V T = -55°C +125°C TO-71 Six Lead 0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115 TO-78 0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100 2 34 1 5 8 76 P-DIP 0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045 6 LEADS 0.019 DIA. 0.016 0.100 0.500 MIN. 0.050 234 1 8 5 6 7 SOIC 0.150 (3.81) 0.158 (4.01) 0.100 45° 0.046 0.036 45° 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261