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LSK389-B-SOIC-8

LSK389-B-SOIC-8

  • 厂商:

    LINEAR(凌力尔特)

  • 封装:

  • 描述:

    LSK389-B-SOIC-8 - ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET - Linear Integrated Systems

  • 数据手册
  • 价格&库存
LSK389-B-SOIC-8 数据手册
LSK389 Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation @ +125 °C Maximum Currents Gate Forward Current Maximum Voltages Gate to Source Gate to Drain -65 to +150 °C -55 to +135 °C 400mW IG(F) = 10mA VGSS = 40V VGDS = 40V ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET en = 0.9nV/√Hz (typ) |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71 BOTTOM VIEW SOIC-A S1 1 2 3 4 8 7 6 5 IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389 G1 D1 S1 2 1 7 3 5 6 G2 SS D2 S2 S2 D2 G2 D1 SS G1 *For equivalent single version, see LSK170 family. MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL VGS1 − VGS2 IDSS1 IDSS2 CHARACTERISTIC Differential Gate to Source Cutoff Voltage MIN TYP MAX UNIT CONDITIONS 20 0.9 mV - VDS = 10V, ID = 1mA VDS = 10V, VGS = 0V Gate to Source Saturation Current Ratio ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS BVGSS VGS(OFF) IDSS IGSS Gate to Source Breakdown Voltage Gate to Source Pinch-off Voltage Drain to Source Saturation Current LSK389A LSK389B LSK389C 40 0.15 2.6 6 10 2 6.5 12 20 200 V V mA pA VDS = 0, ID = 100µA VDS = 10V, ID = 0.1µA VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 Gate to Source Leakage Current Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 ELECTRICAL CHARACTERISTICS CONT. @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS VDS = 10V, VGS = 0, IDSS = 3mA, f = 1kHz VDS = 10V, ID = 2mA, f = 1kHz, NBW = 1Hz VDS = 10V, ID = 2mA, f = 10Hz, NBW = 1Hz VDS = 10V, VGS = 0, f = 1MHz, VDG = 10V, ID = 0, f = 1MHz, Yfs en en CISS CRSS Full Conduction Transconductance Noise Voltage Noise Voltage Common Source Input Capacitance Common Source Reverse Transfer Cap. 8 20 0.9 2.5 25 5.5 1.9 4 mS nV/√Hz nV/√Hz pF pF ORDERING INFORMATION LSK389 - A - SOIC-8 IDSS Range A 2.6 - 6.5 mA B 6 - 12 mA C 10 - 20 mA Package 71 SOIC-8 TO-71 6L SOIC-A 8L PACKAGE DIMENSIONS TO-71 Six Lead 0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115 0.014 0.018 1 2 0.021 3 4 0.150 0.157 SOIC 8 7 6 5 0.050 0.189 0.196 6 LEADS 0.019 DIA. 0.016 0.100 0.500 MIN. 0.0040 0.0098 0.2284 0.2440 DIMENSIONS IN INCHES 0.0075 0.0098 0.050 23 1 5 6 7 45° 0.046 0.036 0.048 0.028 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Revised 07 December 2005. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
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