LT1226CN8

LT1226 Low Noise Very High Speed Operational Amplifier U DESCRIPTIO FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Gain of 25 Stable 1GHz Gain Bandwidth 400V/µs Slew Rate 2.6nV/√Hz Input Noise Voltage 50V/mV Minimum DC Gain, RL = 500Ω 1mV Maximum Input Offset Voltage ±12V Minimum Output Swing into 500Ω Wide Supply Range ±2.5V to ±15V 7mA Supply Current 100ns Settling Time to 0.1%, 10V Step Drives All Capacitive Loads UO APPLICATI ■ ■ ■ ■ ■ Wideband Amplifiers Buffers Active Filters Video and RF Amplification Cable Drivers Data Acquisition Systems The LT1226 is a member of a family of fast, high performance amplifiers that employ Linear Technology Corporation’s advanced bipolar complementary processing. UO ■ S The LT1226 is a low noise, very high speed operational amplifier with excellent DC performance. The LT1226 features low input offset voltage and high DC gain. The circuit is a single gain stage with outstanding settling characteristics. The fast settling time makes the circuit an ideal choice for data acquisition systems. The output is capable of driving a 500Ω load to ±12V with ±15V supplies and a 150Ω load to ±3V on ±5V supplies. The circuit is also capable of driving large capacitive loads which makes it useful in buffer or cable driver applications. TYPICAL APPLICATI Photodiode Preamplifier, AV = 5.1kΩ, BW = 15MHz Gain of +25 Pulse Response V+ + LT1226 51Ω – 5.1k 51Ω LT1226 TA01 LT1226 TA02 1 LT1226 PACKAGE/ORDER I FOR ATIO U W W W Total Supply Voltage (V+ to V –) ............................... 36V Differential Input Voltage ......................................... ±6V Input Voltage ............................................................±VS Output Short Circuit Duration (Note 1) ............ Indefinite Operating Temperature Range LT1226C ................................................ 0°C to 70°C Maximum Junction Temperature Plastic Package .............................................. 150°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec.)................. 300°C ELECTRICAL CHARACTERISTICS U RATI GS W AXI U U ABSOLUTE ORDER PART NUMBER TOP VIEW NULL 1 8 NULL –IN 2 7 V+ +IN 3 6 OUT V– 4 5 NC LT1226CN8 LT1226CS8 S8 PART MARKING N8 PACKAGE S8 PACKAGE 8-LEAD PLASTIC DIP 8-LEAD PLASTIC SOIC 1226 LT1226 PO01 VS = ±15V, TA = 25°C, VCM = 0V unless otherwise noted. SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage (Note 2) IOS Input Offset Current IB Input Bias Current en Input Noise Voltage f = 10kHz in Input Noise Current f = 10kHz RIN Input Resistance VCM = ±12V Differential CIN Input Capacitance Input Voltage Range + MIN TYP MAX UNITS 0.3 1.0 mV 100 400 nA 4 8 µA 2.6 nV/√Hz 1.5 pA/√Hz 24 40 15 MΩ kΩ 2 pF 12 14 V Input Voltage Range – – 13 – 12 V CMRR Common-Mode Rejection Ratio VCM = ±12V 94 103 dB PSRR Power Supply Rejection Ratio VS = ±5V to ±15V 94 110 dB AVOL Large Signal Voltage Gain VOUT = ±10V, RL = 500Ω 50 150 V/mV VOUT Output Swing RL = 500Ω 12.0 13.3 ±V IOUT Output Current VOUT = ±12V 24 40 mA SR Slew Rate (Note 3) 250 400 V/µs Full Power Bandwidth 10V Peak, (Note 4) 6.4 MHz GBW Gain Bandwidth f = 1MHz 1 GHz tr, tf Rise Time, Fall Time AVCL = + 25,10% to 90%, 0.1V 5.5 Overshoot AVCL = +25, 0.1V 35 % Propagation Delay 50% VIN to 50% VOUT 5.5 ns Settling Time 10V Step, 0.1%, AV = – 25 100 ns Differential Gain f = 3.58MHz, AV = +25, RL = 150Ω 0.7 % Differential Phase f = 3.58MHz, AV = +25, RL = 150Ω 0.6 Deg RO Output Resistance AVCL = +25, f = 1MHz 3.1 IS Supply Current ts 2 7 ns Ω 9 mA LT1226 ELECTRICAL CHARACTERISTICS VS = ±5V, TA = 25°C, VCM = 0V unless otherwise noted. SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage (Note 2) IOS Input Offset Current IB Input Bias Current MIN Input Voltage Range + 2.5 Input Voltage Range – TYP MAX 1.0 1.4 mV 100 400 nA 4 8 µA 4 UNITS V –3 –2.5 V CMRR Common-Mode Rejection Ratio VCM = ±2.5V 94 103 dB AVOL Large Signal Voltage Gain VOUT = ±2.5V, RL = 500Ω VOUT = ±2.5V, RL = 150Ω 50 100 75 V/mV V/mV VOUT Output Voltage RL = 500Ω RL = 150Ω 3.0 3.0 3.7 3.3 ±V ±V IOUT Output Current VOUT = ±3V 20 40 mA SR Slew Rate (Note 3) 250 V/µs Full Power Bandwidth 3V Peak, (Note 4) 13.3 MHz GBW Gain Bandwidth f = 1MHz 700 MHz tr, tf Rise Time, Fall Time AVCL = +25, 10% to 90%, 0.1V 8 ns Overshoot AVCL = +25, 0.1V 25 % Propagation Delay 50% VIN to 50% VOUT 8 ns ts Settling Time – 2.5V to 2.5V, 0.1%, AV = – 24 IS Supply Current 60 ns 7 ELECTRICAL CHARACTERISTICS 9 mA 0°C ≤ TA ≤ 70°C, VCM = 0V unless otherwise noted. SYMBOL PARAMETER CONDITIONS VOS Input Offset Voltage VS = ±15V, (Note 2) VS = ± 5V, (Note 2) MIN Input VOS Drift TYP MAX 0.3 1.0 1.3 1.8 UNITS mV mV µV/°C 6 IOS Input Offset Current VS = ±15V and VS = ± 5V 100 600 nA IB Input Bias Current 4 9 µA CMRR Common-Mode Rejection Ratio VS = ±15V and VS = ± 5V VS = ±15V, VCM = ±12V and VS = ± 5V, VCM = ± 2.5V 92 103 dB PSRR Power Supply Rejection Ratio VS = ±5V to ±15V 92 110 dB AVOL Large Signal Voltage Gain VS = ±15V, VOUT = ±10V, RL = 500Ω VS = ±5V, VOUT = ±2.5V, RL = 500Ω 35 35 150 100 V/mV V/mV VOUT Output Swing VS = ±15V, RL = 500Ω VS = ±5V, RL = 500Ω or 150Ω 12.0 3.0 13.3 3.3 ±V ±V IOUT Output Current VS = ±15V, VOUT = ±12V VS = ±5V, VOUT = ±3V 24 20 40 40 mA mA SR Slew Rate VS = ±15V, (Note 3) 250 IS Supply Current VS = ±15V and VS = ± 5V Note 1: A heat sink may be required to keep the junction temperature below absolute maximum when the output is shorted indefinitely. Note 2: Input offset voltage is tested with automated test equipment in