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LT3710EFE

LT3710EFE

  • 厂商:

    LINEAR(凌力尔特)

  • 封装:

    TSSOP16_EP

  • 描述:

    IC SECONDARY SIDE CTRLR 16TSSOP

  • 数据手册
  • 价格&库存
LT3710EFE 数据手册
LT3710 Secondary Side Synchronous Post Regulator U FEATURES ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT®3710 is a high efficiency step-down switching regulator intended for auxiliary outputs in single secondary winding, multiple output power supplies. Generates a Regulated Auxiliary Output in Isolated DC/DC Converters 0.8V ±1.5% Accurate Voltage Reference Dual N-Channel MOSFET Synchronous Drivers High Switching Frequency: Up to 500kHz Programmable Current Limit Protection Programmable Soft-Start Automatic Frequency Synchronization Small 16-Pin Thermally Enhanced TSSOP Package The LT3710 drives dual synchronous N-channel MOSFETs and achieves high efficiency. With leading edge modulation, it operates well with either primary side peak current or voltage mode control. It is synchronized to the falling edge of the transformer secondary winding and can be used in both single-ended and double-ended isolated power converter topologies. A high speed operational amplifier is incorporated to achieve optimum compensation and fast transient response. A user selectable discontinuous conduction mode improves light load efficiency. U APPLICATIO S ■ ■ ■ 48V Isolated DC/DC Converters Multiple Output Supplies Offline Converters The LT3710 is available in a thermally enhanced TSSOP-16 exposed pad power package. , LTC and LT are registered trademarks of Linear Technology Corporation. U TYPICAL APPLICATIO VOUT1 3.3V AT 10A L1 VIN 36V TO 72V VCC BIAS 10k VCC BOOST VDD • • CMDSH-3 SYNC GBIAS VCOMP 10pF CG 4.7µF LT3710 VFB CS 680pF FG CSET Q1 TG L2 1.8µH 0.1µF 0.006Ω SW ISNS LTC1698 10k 180pF TG BG LT3781 SG • • + Q2 ILCOMP BG 0.01µF SS B340A VOUT2 1.8V AT 10A COUT2 4700pF VAOUT BGS SYNC 3.3k 3.01k 220Ω 33nF VFB PGND CL– CL+ 2.32k 3710 F01 OPTODRV VC + – VREF GND VFB ISOLATION BOUNDARY COUT2: POSCAP, 680µF/4V L2: SUMIDA CEP125-IR8MC-H Q1, Q2: SILICONIX Si7440DP PLEASE REFER TO FIGURE 3 IN THE APPLICATIONS SECTION FOR THE COMPLETE SCHEMATIC Figure 1. Simplified Single Secondary Winding 3.3V and 1.8V Output Isolated DC/DC Converter 3710f 1 LT3710 U W W W ABSOLUTE AXI U RATI GS U W U PACKAGE/ORDER I FOR ATIO (Note 1) VCC Supply Voltage .................................................. 26V BOOST Pin Voltage With Respect to SW pin ........... 10V BOOST Pin Voltage With Respect to GND pin .......... 35V SYNC Pin Voltage .................................................... 30V Operating Junction Temperature Range (Notes 2, 3) ...................................... – 40°C to 125°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C ORDER PART NUMBER TOP VIEW BOOST 1 16 GBIAS TGATE 2 15 BGATE SW 3 14 PGND CSET 4 SYNC 5 12 CL– ILCOMP 6 11 CL+ SS 7 10 VAOUT VFB 8 9 Note: If higher than 30V on SYNC pin is needed, add a 10k resistor in series with the pin. 17 LT3710EFE 13 VCC FE PART MARKING BGS FE PACKAGE 16-LEAD PLASTIC TSSOP 3710EFE TJMAX = 125°C, θJA = 38°C/W EXPOSED PAD IS SGND (PIN 17) MUST BE CONNECTED TO PGND AND SOLDERED TO PCB Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 11V, operating maximum VCC = 24V, no load on any outputs unless otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNITS Overall Supply Voltage (VCC) ● 8 24 V Supply Current (IVCC) VAOUT ≤ 1.2V (Switching Off) 7 12 mA Boost Pin Current VBOOST = VSW + 8V, 0V ≤ VSW ≤ 24V TGATE High TGATE Low 2 2 3 3 mA mA 0.8 0.812 0.820 V V 0.2 0.5 µA Voltage Amplifier VA Reference Voltage (VREF) ● FB Pin Input Current 0.788 0.780 VFB = VREF VAOUT High 4.5 V VAOUT Low 0.8 V VAOUT Source Current ● 100 Open-Loop Gain 300 100 Gain Bandwidth Product dB 10 Soft-Start Current µA MHz 18 µA 70 85 mV 8 15 mV 5 12 50 0 Current Limit Amplifier CA1 Current Limit Threshold at (VCL+ – VCL–) Common Mode Voltage from 0V to VCC – 2.5V BGATE Off Threshold at (VCL+ – VCL–), BGS Pin Float Common Mode Voltage from 0V to VCC – 2.5V Switching Off Threshold at ILCOMP VILCOMP Input Current (CL+, CL–) VCL+ = VCL– ● 0.15 100 V µA 3710f 2 LT3710 ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 11V, operating maximum VCC = 24V, no load on any outputs unless otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNITS 200 280 240 340 kHz kHz 400 500 kHz kHz Oscillator Switching Frequency CS = 500pF (No SYNC) CS = 333pF (No SYNC) ● ● 170 240 Synchronization Frequency Range CS = 500pF CS = 333pF ● ● 245 345 CSET Ramp Valley Voltage CS = 1000pF (No SYNC) CSET Peak-to-Peak Voltage CS = 1000pF (No SYNC) 2.4 V Synchronization Pulse Threshold on SYNC Pin Falling Edge VSYNC 2.5 V Maximum Duty Cycle VFB = VREF – 5mV, CS > 500pF ● 85 90 % VGBIAS IGBIAS < 25mA ● 7.5 8.0 VTGATE High (VTGATE – VSW) ITGATE < 50mA, VBOOST = VGBIAS – 0.5V ● 5 VBGATE High IBGATE < 50mA ● 5 VTGATE Low (VTGATE – VSW) ITGATE < – 50mA ● VBGATE Low IBGATE < – 50mA ● Peak Gate Drive Current 10nF Load 1 A Gate Drive Rise and Fall Time 1nF Load 25 ns 0.90 1.15 1.4 V Gate Drivers (TGATE, BGATE) Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: The LT3710E is guaranteed to meet performance specifications from 0°C to 125°C. Specifications over the – 40°C to 125°C operating temperature range are assured by design, characterization and correlation with statistical process controls. 8.5 V 6 7 V 6 7.5 V 0.5 V 0.5 V Note 3: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. U W TYPICAL PERFOR A CE CHARACTERISTICS VGBIAS vs IGBIAS over Junction Temperature Voltage Amplifier VA Gain and Phase ICC vs VCC (Switching Off) 8.1 13 120 TA = 25°C –40°C –0 TA = 25°C 12 11 7.9 10 9 8 –50 (–111°) PHASE 40 –100 7 7.8 125°C 7.7 GAIN 80 GAIN (dB) ICC (mA) 25°C PHASE (DEG) VGBIAS (V) 8.0 0 10 IGBIAS (mA) 0 6 20 26 3710 G01 5 –150 0dB, 10MHz –20 8 10 12 14 16 18 VCC (V) 20 22 24 3710 G02 10 100 1k 10k 100k 1M FREQUENCY (Hz) –180 10M 100M 3710 G03 3710f 3 LT3710 U W TYPICAL PERFOR A CE CHARACTERISTICS ∆VREF vs VCC, ∆FREQ vs VCC VREF vs Temperature 0.801 CSET = 500pF 2 0.800 1 ∆VREF VREF (V) ∆VREF (mV) CSET = 500pF 3 TA = 25°C 0 1 ∆FREQ 0 –1 10 15 VCC (V) 20 ∆FREQ (kHz) –1 0.799 0.798 –40 25 –20 0 25 50 75 JUNCTION TEMPERATURE (°C) 3710 G04 3710 G05 Frequency vs Temperature 195 125 CSET vs Switching Frequency 500 CSET = 500pF TA = 25°C 0.95 400 FREQUENCY (kHz) 200 205 210 MAXIMUM DUTY CYCLE 0.90 0.85 300 0.80 0.75 200 MAXIMUM DUTY CYCLE SWITCHING FREQUENCY (kHz) 1.00 CSET 0.70 215 –40 –20 0 25 50 75 JUNCTION TEMPERATURE (°C) 100 200 125 400 600 CSET (pF) 800 3710 G06 1000 3710 G07 Current Limit Amplifier CA1 Gain at VCC = 11V, VCL– = 5V GBIAS vs IGBIAS (Charging 2.2µF) 8 12 VCC = 11V 7 VCLN = 5V TA = 25°C 10 6 200 8 5 150 6 100 4 300 VGBIAS IGBIAS 50 VGBIAS (V) IGBIAS (mA) 250 VAOUT (V) CGBIAS = 2.2µF 4 CSET PEAK 3 2 2 0 1 CSET VALLEY 0 0 500µs TIME 1ms 3710 G08 0 50 60 70 80 VCL+ – VCL– (mV) 90 3710 G09 3710f 4 LT3710 U U U PI FU CTIO S BOOST (Pin 1): Topside (Boosted) Driver Supply. This pin is used to bootstrap and supply the topside power switch gate drive circuitry. In normal operation VBOOST is powered from the internally generated 8V GBIAS, VBOOST = VSW + 8.2V when TGATE is on. TGATE (Pin 2): Topside (Boosted) N-Channel MOSFET Driver. When TGATE is on, the voltage is equal to VSW + 6V. SW (Pin 3): Switch Node Connection to Inductor. CSET (Pin 4): Oscillator Timing Pin. The capacitor on this pin sets the PWM switching frequency. SYNC (Pin 5): Synchronization Input. This pin should be connected to the secondary side output of the power transformer with a series resistor. A filtering capacitor of 10pF is recommended. ILCOMP (Pin 6): Current Limit Amplifier Compensation Node. At current limit, CA1 pulls down on this pin to regulate the output current. SS (Pin 7): Soft-Start. A capacitor on this pin sets the output ramp up rate. The typical time for SS to reach the programmed level is (C • 0.8V)/10µA. VFB (Pin 8): Voltage Amplifier Inverting Input. A resistor divider to this pin sets the output voltage. Nominal voltage at this pin is 0.8V. BGS (Pin 9): Bottom Gate Switching Control. CA2 monitors the inductor current and prohibits BGATE from turning on when the inductor current is low (below 8mV across the current sense resistor RS1) to allow discontinous mode operation. Grounding this pin disables comparator CA2. VAOUT (Pin 10): Voltage Amplifier Output. CL+ (Pin 11): Current Limit Amplifier Positive Input. The threshold is set at 70mV. CL– (Pin 12): Current Limit Amplifier Negative Input. When used, CL– is connected to the output capacitor side of the current + sense resistor and CL+ is connected to the inductor side of the current sense resistor. VCC (Pin 13): Supply of the IC. For proper bypassing, a low ESR capacitor is required. PGND (Pin 14): Ground of the Bottom Side N-Channel MOSFET Driver. BGATE (Pin 15): Bottom Side N-Channel MOSFET Driver. GBIAS (Pin 16): 8V Regulator Output for Boostrapping VBOOST . A bypass capacitor of at least 2µF is needed. Exposed Pad (Pin 17): Connect to PGND (Pin 14). 3710f 5 6 RS 10k C5 500pF CSET CS 10pF SYNC D1 R7 4 5 2.5V + – SGND + C8 2µF R8 17 E4 13 A7 8V A1 + + – A2 ONE SHOT RESET E2 R OSC S SHUTDOWN NOTE: EXPOSED PAD (PIN 17) IS SGND AND MUST BE CONNECTED TO PGND (PIN 14). D2 Q1 VCC – D5 PWM 1.6V 3.5V 2.5V SS SW BGATE + VS + + + CA1 – + + – + – + – 70mV + 8mV A11 A6 A10 A3 – + 5V CA2 + I1 10µA A5 A4 VA 2V + + – I2 200µA – A8 7 D7 D6 7V SS C7 5nF D4 + 8V VREF 0.8V R2 + R1 8 10 6 12 11 9 14 15 16 3 2 1 VFB VAOUT ILCOMP CL– CL+ BGS PGND BGATE C3 2µF GBIAS SW TGATE BOOST D3 R5 2k C1 500pF C2 0.3µF IL L1 C6 100pF R6 5k M2 M1 RS1 3710 BD R4 R3 C4 2nF IO VOUT2 COUT 100µF LT3710 BLOCK DIAGRA 3710f W LT3710 U OPERATIO To generate isolated multiple outputs, most systems use either multiple secondary windings or cascade regulators for each additional output. Multiple secondary windings sacrifice regulation of the auxiliary outputs. Cascaded regulators require a larger inductor for the main output, because all of the power is processed in series. until the ramp signal intersects the feedback error amplifier output VAOUT. The top MOSFET M1 turns on, pulling the switch node voltage to VS. The inductor current of the LT3710 circuit is then charged by VS – VOUT2. The effective on time of this buck circuit ends when the secondary voltage becomes zero. The next cycle repeats. By generating the auxiliary output(s) from the secondary winding of the main output, the LT3710 allows for parallel processing of the output power. This minimizes the main output inductor size and directly regulates the auxiliary output. With synchronous rectification, the system efficiency is greatly improved. The ideal equation for duty cycle of the LT3710 is: Refering to the Block Diagram, the LT3710 basic functions include a voltage amplifier, VA, to regulate the output voltage to within typically 1.5%, a voltage mode PWM with trailing edge synchronization and leading edge modulation, a current limit amplifier, CA1, and high speed synchronous switch drivers. During normal operation (see Figure 2), a switching cycle begins at the falling edge of the transformer secondary voltage VS. The internal oscillator is reset, turning off the top MOSFET M1 and turning on the bottom MOSFET M2. During this portion of the cycle, the inductor current is discharged by the output voltage VOUT2. The transformer secondary voltage VS will go high during this portion of the cycle. Since M1 is off, the switch node voltage VSW remains zero. The inductor current continues to be discharged by the output voltage VOUT2. This condition lasts D2 = VOUT2/VSP where VOUT2 is the auxiliary output voltage, VSP is the amplitude of the secondary voltage and D2 is the duty cycle of the switching node voltage VSW, as defined in Figure 2. VRESET T D1T TRANSFORMER SECONDARY VOLTAGE VS VSP SYNC SIGNAL VRESET RAMP VCSET VAOUT TGATE BGATE IL T SWITCH NODE VSW D2 T VSP 3710 F02 Figure 2. Leading Edge Modulation, Trailing Edge Synchronization U W U U APPLICATIO S I FOR ATIO Synchronization and Oscillation Frequency Setting The switching is synchronized to the secondary winding falling edge and the synchronization threshold is typically 2.5V. The synchronization falling edge triggers an internal inverted ramp (see Figure 2) and starts a new switching cycle for the leading edge voltage mode PWM. The reason for using leading edge modulation is to keep the transformer primary side peak current sensing undisturbed. For proper synchronization, the oscillator frequency should be set lower than the system switching frequency with tolerances taken into account. fOSC < (fSL • 0.8) fSL is the low limit of the system switching frequency and 0.8 is the tolerance of fOSC. For example, a system of 200KHz with 15% tolerance, then fSL = 200k • 85% = 170kHz; and fOSC < (170k • 0.8), fOSC should be set below 136kHz. Once fOSC is determined, CSET can be calculated by CSET = (107250pf/fOSC(kHz)) – 50pF. For fOSC = 100kHz, CSET = 1022.5pF. 3710f 7 LT3710 U W U U APPLICATIO S I FOR ATIO Output N-Channel MOSFET Drivers The LT3710 employs high speed N-channel MOSFET synchronous drivers to achieve high system efficiency. GBIAS is the 8V regulator output to bias and supply the drivers and should be properly bypassed with a low ESR capacitor to ground plane. A Schottky catch diode is required on the switch node. Light Load Operation If the BGS pin is grounded, the LT3710 stays in continuous mode independent of load condition except in soft-start operation (see Soft-Start section). If the BGS pin is left open, under light load and VRS1 drops below 8mV, BGATE will be turned off(see comparator CA2 of Block Diagram) and the LT3710 goes into discontinous mode operation. Current Limit Current limit is set by the 70mV threshold across CL+ and CL –, the inputs of the amplifier CA1. By connecting an external resistor RS1(see Block Diagram), the current limit is set for 70mV/RS1. R6 and C6 stablize the current limit loop. If current limit is not used, both CL+ and CL – should be grounded and the BGS pin should also be grounded to disable comparator CA2. Soft-Start and Shutdown During soft-start, VSS is the reference voltage that controls the output voltage and the output ramps up following VSS. The effective range of VSS is from 0V to VREF. The typical time for the output to reach the programmed level is (C • 0.8V)/10µA. During start up, BGATE will stay off until VSS gets up to 1.6V. This prevents the bottom MOSFET from turning on if the output is precharged. To shut down the LT3710, the SS pin should be pulled below 50mV by a VN2222 type N-channel transistor. Note that during shutdown BGATE will be locked off when VSS drops below 0.6V. This prevents the bottom MOSFET from discharging the output, which would cause the output to undershoot below ground. Layout Considerations For maximum efficiency, the switching rise and fall times are less than 20ns. To prevent radiation, the power MOSFETs, SW pin and input bypass capacitor leads should be kept as short as possible. A ground plane should be used under the switching circuitry to prevent interplane coupling and to act as a thermal spreading path. Note that the bottom metal of the package is the heat sink, as well as the IC signal ground, and must be soldered to the ground plane. Output Voltage Programming The feedback reference voltage is 0.8V. The output voltage can be easily programmed by the resistor divider, R3 and R4, as shown in the Block Diagram.  R3  VOUT2 = 0.8 •  1 +   R4  Filtering on the SYNC Input It is necessary to add RC filtering on the SYNC input of the LT3710 to eliminate the negative glitch at the turn on of the top MOSFET. When the top MOSFET M1 turns on, the transformer secondary current instantly changes from the original first output inductor current to the sum of two output inductor currents. The high di/dt on the transformer leakage inductance causes the transformer secondary voltage VS to drop for a short interval. If the leakage inductance is large enough, the VS dip will be lower than the synchronization threshold (about 2.5V), falsely triggering the synchronization. The top MOSFET is turned off immediately. As a result, the output voltage will not be regulated properly. A filter circuit is needed to ensure proper operation. A small RC filter with RS = 10k and CS = 10pF are typical. 3710f 8 LT3710 U W U U APPLICATIO S I FOR ATIO Output Inductor Selection The key parameters for choosing the inductor include inductance, RMS and saturation current ratings and DCR. The inductance must be selected to achieve a reasonable value of ripple current, which is determined by: VOUT2 • (1 − D2) ∆IL = f •L Typically, the inductor ripple current is designed to be 20% to 40% of the maximum output current. The RMS current rating must be high enough to deliver the maximum output current. A sufficient saturation current rating should prevent the inductor core from saturating. These two current ratings can be determined by: ∆ILMAX2 IRMS ≥ IO + 12 ∆I ISAT ≥ IO + LMAX 2 2 where IO is the maximum output current and ∆ILMAX is the maximum peak-to-peak inductor ripple current. To optimize the efficiency, we usually choose the inductor with the minimum DCR if the inductance and current ratings are the same. Power MOSFET Selection The LT3710 drives two external N-channel MOSFETs to deliver high currents at high efficiency. The gate drive voltage is typically 6.5V. The key parameters for choosing MOSFETs include drain to source voltage rating VDSS and RDS(ON) at 6.5V gate drive. Note that the transformer secondary voltage waveform will overshoot at its rising edge due to the ringing between transformer leakage inductance and parasitic capacitance. The VDSS of both top and bottom MOSFETs must be sufficiently higher than the maximum overshoot. It is recommended that an RC snubber or a voltage clamping circuitry be placed across the transformer secondary winding to limit the VS overshoot. The RDS(ON) of the MOSFETs should be selected to deliver the required current at the desired efficiency as well as to meet the thermal requirement of the MOSFET package. The conduction power losses of the MOSFETs are: PM1 ≅ IO2 • RDS(ON)M1 • D2 PM2 ≅ IO2 • RDS(ON)M2 • (1 – D2) where IO is the maximum output current of LT3710 circuit, RDS(ON)M1 and RDS(ON)M2 are the on-resistance for the top and bottom MOSFETs, respectively. The RDS(ON) must be determined with 6.5V gate drive and the expected operating temperature. A good number of high performance power MOSFET selections are available from Siliconix, International Rectifier and Fairchild. If the VDSS and RDS(ON) ratings are the same, the MOSFETs with the lowest gate charge QG should be chosen to minimize the power loss associated with the MOSFET gate drives, the switching transitions and the controller bias supply. Output Capacitor Selection The selection of the output capacitor is determined by the output ripple and load transient requirements. In low output voltage applications, always choose capacitors with low ESR. The output ripple voltage is approximated by:  1  ∆VOUT ≈ ∆IL  ESR +   8fC OUT  where ∆IL is the inductor peak-to-peak ripple current. A partial list of low ESR high performance capacitor types includes SP capacitors from Panasonic and Cornell Dubilier, POSCAPs and OS-CON capacitors from Sanyo, T510 and T520 surface mount capacitors from Kemet. Design Example Figure 3 shows an application example for the LT3710. It is a dual output, high efficiency, isolated DC/DC power supply with 36V to 72V input, 3.3V/10A and 1.8V/10A outputs. The basic power stage topology is a 2-transistor 3710f 9 ON/OFF FZT 853 1.24k 1 2 13 20 1nF 1µF 5VREF 5 6 52.3k 1% FSET 0.1µF SHDN 5VREF OVLO VCC VBST BAS21 DO1608C-105 19 18 15 11 82pF 3 7 4.7nF 4 8 5 7 6 5VREF 0.1µF 8 4 3 1• 4 2 VOUT1 0.01µF 14 5 12 11 10Ω 16 2 6 VAUX LTC1698 MARGIN OVPIN VFB 3 4 10 PGND GND PWRGD ICOMP 0.1µF OPTODRV SYNC 1µF 13 7 9 8 + B0540W Si7440DP 470µF 4V POSCAP 2.5µH SUMIDA CEP125-2R5 + 1.24k 1% 2.43k 1% 1.78k 1% 3.01k 1% NOTE UNLESS NOTED: ALL CAPS 25V ALL RESISTORS 0.1W, 5% Q1, Q2 SILICONIX Si7456DP 0.22µF B0540W 22nF 470Ω 1nF CMPZ5240B 10V 10Ω 1nF 100V 2k 1nF 100V SEC VDD ISNS ISNSGND FG CG VCOMP 1 4.7µF FZT690B 2.2nF 250VAC Si7440DP ×2 5 7 VCCS 1µF 4.7k 15 3 4.7nF 1k 220pF 1 •8 4 2 MUR120S 7 T2 PULSE P2033 0.025Ω 1/2W Q2 BAT54 3.3Ω 1k 3.3nF 3k 10Ω 10 9 PGND 12 SG 14 BAS21 THERM SYNC SGND SS VC VFB LT3781 TG BSTREF BG SENSE 10k BAS21 BAT54 ZVN3310F BAT54 330pF MUR120S Q1 T1 PULSE PA0191 1 • 470µF 4V POSCAP Figure 3a. 36V to 72V DC to 3.3V/10A and 1.8V/10A (or 2.5V/10A) Dual Output Isolated Power Supply-Basic Circuit (Part 1 of 2, See Next Page) 4.7µF 0.1µF 10k 1N4148 270k 73.2k 11V MMSZ5241B 20k B0540W VIN– 1.5µF 100V 1.5µF 100V • • 3710 F03a VOUT1 TRIM VOUT RTN VOUT1+ 3.3V AT 10A U U 10 W VIN+ APPLICATIO S I FOR ATIO U 1.2µH COILCRAFT D01813P-122HC LT3710 3710f LT3710 U U W U APPLICATIO S I FOR ATIO forward converter with synchronous rectification. The primary side controller uses an LT3781, a current mode 2-transistor forward controller with built-in MOSFET drivers. On the secondary side, an LTC1698 is used to provide the voltage feedback for the 3.3V output, as well as the gate drive for the synchronous MOSFETs. The error amplifier output is fed into the optocoupler and then relayed to LT3781 on the primary side to complete the 3.3V regulation. The 1.8V output is generated by the LT3710 circuit. A planar transformer PA0191 built by Pulse Engineering is employed as the power transformer in this design. This transformer is constructed on a PQ20 core with a nine turn primary winding, two turn secondary winding and seven turn auxiliary winding for the LT3781 bias supply. Because 10pF 10k SEC 7 0.01µF VCCS 1µF 13 4 C37 680pF 14 6 180pF 10k 17 SS GBIAS TGATE VCC LT3710 CSET Si7440DP CMDSH-3 BOOST SYNC The switching frequency of the circuit is about 230kHz. 1500V input to output isolation is provided. Additional features of this design include primary side on/off control, ±5% secondary side trimming on the 3.3V output, input overvoltage protection and undervoltage lockout. The complete design will mount within a standard half brick PC board with about half inch height. 0.1µF 16V 4.7µF 16V 1 5 the maximum secondary voltage VSP is about 16V, 30V MOSFETs are chosen with the consideration that the secondary voltage overshoot is typically 20% to 30% of VSP. In this particular design, Si7440DP is selected due to its low RSD(ON), 30V VDSS rating and its compact and thermally enhanced PowerPak SO-8 package. SW BGATE PGND BGS ILCOMP CL+ 16 1.8µH SUMIDA 0.006Ω CEP125-IR8 1% 10Ω 2 3 15 CMDSH-3 9 + Si7440DP B340A 11 680µF 4V POSCAP + VOUT2 1.8V/10A 680µF 4V POSCAP 12 CL– PGND VAOUT VFB 10 8 0.033µF 0.01µF 3.3k 330pF 4700pF 3.01k 1% 220Ω 2.32k 1% 3710 F03b Figure 3b. 36V to 72V DC to 3.3V/10A and 1.8V/10A Dual Output Isolated Power Supply (Part 2 of 2, See Previous Page) 3710f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT3710 U PACKAGE DESCRIPTIO FE Package 16-Lead Plastic TSSOP (4.4mm) (Reference LTC DWG # 05-08-1663) Exposed Pad Variation BA 4.90 – 5.10* (.193 – .201) 2.74 (.108) 2.74 (.108) 16 1514 13 12 1110 6.60 ±0.10 9 2.74 (.108) 4.50 ±0.10 SEE NOTE 4 2.74 6.40 (.108) BSC 0.45 ±0.05 1.05 ±0.10 0.65 BSC 1 2 3 4 5 6 7 8 RECOMMENDED SOLDER PAD LAYOUT 1.10 (.0433) MAX 4.30 – 4.50* (.169 – .177) 0° – 8° 0.09 – 0.20 (.0036 – .0079) 0.65 (.0256) BSC 0.45 – 0.75 (.018 – .030) NOTE: 1. CONTROLLING DIMENSION: MILLIMETERS MILLIMETERS 2. DIMENSIONS ARE IN (INCHES) 3. DRAWING NOT TO SCALE 0.195 – 0.30 (.0077 – .0118) 0.05 – 0.15 (.002 – .006) FE16 (BA) TSSOP 0203 4. RECOMMENDED MINIMUM PCB METAL SIZE FOR EXPOSED PAD ATTACHMENT *DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.150mm (.006") PER SIDE RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT1339 High Power Synchronous DC/DC Controller Operation Up to 60V Maximum LT1425 Isolated Flyback Switching Regulator General Purpose with External Application Resistor LT1431 Programmable Reference 0.4% Initial Voltage Tolerance LT1680 High Power DC/DC Step-Up Controller Operation Up to 60V Maximum LT3781 Dual Transistor Synchronous Forward Controller Operation Up to 72V Maximum LT1725 General Purpose Isolated Flyback Controller Drives External Power MOSFET with External ISENSE Resistor LT1737 High Power Isolated Flyback Controller Sense Output Voltage Directly from Primary-Side Winding LT1950 PWM Controller for Flyback, Forward and SEPIC Applications 15W to 500W, Isolated and Nonisolated Power Supply 50% Smaller Transformer, Protects MOSFET LT3804 Secondary Side Dual Output Controller with Optodriver Regulates Two Outputs, Optocoupler Feedback Driver and Second Output Synchronous Driver Controller 3710f 12 Linear Technology Corporation LT/TP 0803 1K • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com  LINEAR TECHNOLOGY CORPORATION 2002
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