LT3845
High Voltage Synchronous
Current Mode Step-Down
Controller with Adjustable
Operating Frequency
DESCRIPTION
FEATURES
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High Voltage Operation: Up to 60V
Synchronizable Up to 600kHz
Adjustable Constant Frequency: 100kHz to 500kHz
Output Voltages Up to 36V
Adaptive Nonoverlap Circuitry Prevents Switch
Shoot-Through
Reverse Inductor Current Inhibit for Discontinuous
Operation Improves Efficiency with Light Loads
Programmable Soft-Start
120μA No Load Quiescent Current
10μA Shutdown Supply Current
1% Regulation Accuracy
Standard Gate N-Channel Power MOSFETs
Current Limit Unaffected by Duty Cycle
Reverse Overcurrent Protection
16-Lead Thermally Enhanced TSSOP Package,
16-Pin PDIP
APPLICATIONS
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12V and 42V Automotive and Heavy Equipment
48V Telecom Power Supplies
Avionics and Industrial Control Systems
Distributed Power Converters
The LT®3845 is a high voltage, synchronous, current
mode controller used for medium to high power, high
efficiency supplies. It offers a wide 4V to 60V input range
(7.5V minimum start-up voltage). An onboard regulator
simplifies the biasing requirements by providing IC power
directly from VIN.
Burst Mode® operation maintains high efficiency at light
loads by reducing IC quiescent current to 120μA. Light
load efficiency is also improved with the reverse inductor
current inhibit function which supports discontinuous
operation.
Additional features include adjustable fixed operating
frequency that can be synchronized to an external clock
for noise sensitive applications, gate drivers capable of
driving large N-channel MOSFETs, a precision undervoltage
lockout, 10μA shutdown current, short-circuit protection
and a programmable soft-start.
The LT3845 is available in a 16-lead thermally enhanced
TSSOP package and 16-pin through hole N package.
L, LT, LTC, LTM, Burst Mode, Linear Technology and the Linear logo are registered trademarks
of Linear Technology Corporation. All other trademarks are the property of their respective
owners.. Protected by U.S. Patents, including 5481178, 6611131, 6304066, 6498466, 6580258.
TYPICAL APPLICATION
Efficiency and Power Loss vs
Load Current
High Voltage Step-Down Regulator 48V to 12V at 75W
VIN
20V TO 55V
100
0.1μF
1M
VIN
BOOST
SHDN
82.5k
1500pF
CSS
TG
LT3845
BURST_EN
VFB
20k
143k
49.9k
BAS521
15μH
VCC
Si7370DP
B160
33μF
×3
SYNC
SENSE+
fSET
SENSE–
SGND
95
6
90
5
85
4
80
3
2
75
PGND
VC
2200pF
VOUT
12V
75W
0.01Ω
SW
BG
100pF
16.2k
Si7370DP
7
VIN = 48V
POWER LOSS (W)
47μF
63V
EFFICIENCY(%)
2.2μF
100V
LOSS
1
70
1μF
65
0.1
1N4148
3845 TA01a
0
1
LOAD CURENT (A)
10
3845 TA01b
3845fd
1
LT3845
ABSOLUTE MAXIMUM RATINGS (Note 1)
Input Supply Voltage (VIN) ........................................65V
Boosted Supply Voltage (BOOST) .............................80V
Switch Voltage (SW) (Note 8) ....................... 65V to –2V
Differential Boost Voltage
(BOOST to SW).....................................................24V
Bias Supply Voltage (VCC) .........................................24V
SENSE+ and SENSE– Voltages ..................................40V
Differential Sense Voltage
(SENSE+ to SENSE–)................................... 1V to –1V
BURST_EN Voltage ...................................................24V
SYNC, VC, VFB, CSS, and SHDN Voltages ....................5V
SHDN Pin Currents ..................................................1mA
Operating Junction Temperature Range (Note 2)
LT3845E (Note 3) ............................... –40°C to 125°C
LT3845I .............................................. –40°C to 125°C
LT3845MP.......................................... –55°C to 125°C
Storage Temperature.............................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec) .................. 300°C
PIN CONFIGURATION
TOP VIEW
TOP VIEW
VIN
1
16 BOOST
VFB
1
16 BURST_EN
SHDN
2
15 TG
VC
2
15 CSS
CSS
3
14 SW
fSET
3
14 SHDN
BURST_EN
4
SGND
4
13 VIN
VFB
5
12 BG
SENSE–
5
12 BOOST
VC
6
11 PGND
SENSE+
6
11 TG
SYNC
7
10 SENSE+
PGND
7
10 SW
8
SENSE–
BG
8
9
fSET
17
13 VCC
9
VCC
N PACKAGE
16-LEAD PDIP
FE PACKAGE
16-LEAD PLASTIC TSSOP
TJMAX = 125°C, θJA = 40°C/W, θJC = 10°C/W
EXPOSED PAD (PIN 17) IS SGND, MUST BE SOLDERED TO PCB
TJMAX = 125°C, θJA = 70°C/W, θJC = 34°C/W
ORDER INFORMATION
LEAD FREE FINISH
TAPE AND REEL
PART MARKING*
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LT3845EFE#PBF
LT3845EFE#TRPBF
3845FE
16-Lead Plastic TSSOP
–40°C to 125°C
LT3845IFE#PBF
LT3845IFE#TRPBF
3845FE
16-Lead Plastic TSSOP
–40°C to 125°C
LT3845MPFE#PBF
LT3845MPFE#TRPBF
3845FE
16-Lead Plastic TSSOP
–55°C to 125°C
LT3845EN#PBF
LT3845EN#TRPBF
3845N
16-Lead PDIP
–40°C to 125°C
Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
3845fd
2
LT3845
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 20V, VCC = BOOST = BURST_EN = 10V, SHDN = 2V, RSET = 49.9kΩ,
SENSE – = SENSE+ = 10V, SGND = PGND = SW = SYNC = 0V, unless otherwise noted.
PARAMETER
CONDITIONS
●
●
●
VIN Operating Voltage Range (Note 4)
VIN Minimum Start Voltage
VIN UVLO Threshold (Falling)
VIN UVLO Threshold Hysteresis
VIN Supply Current
VIN Burst Mode Current
VIN Shutdown Current
VCC > 9V
VBURST_EN = 0V, VFB = 1.35V
VSHDN = 0V
BOOST Operating Voltage Range
BOOST Operating Voltage Range (Note 5)
BOOST UVLO Threshold (Rising)
BOOST UVLO Threshold Hysteresis
VBOOST – VSW
VBOOST – VSW
VBOOST – VSW
BOOST Supply Current (Note 6)
BOOST Burst Mode Current
BOOST Shutdown Current
VBURST_EN = 0V
VSHDN = 0V
VCC Operating Voltage Range (Note 5)
VCC Output Voltage
VCC UVLO Threshold (Rising)
VCC UVLO Threshold Hysteresis
Over Full Line and Load Range
VBURST_EN = 0V
VSHDN = 0V
Error Amp Reference Voltage
Measured at VFB Pin
Sense Pins Common Mode Range
Current Limit Sense Voltage
Reverse Protect Sense Voltage
Reverse Current Inhibit Offset
Input Current (ISENSE+ + ISENSE–)
3.6
VSENSE+ – VSENSE–
VSENSE+ – VSENSE–, VBURST_EN = VCC
VBURST_EN = 0V or VBURST_EN = VFB
●
●
●
●
●
60
7.5
4
15
●
–40
●
1.224
1.215
1.3
●
●
0
90
VSENSE(CM) = 0V
VSENSE(CM) = 2V
VSENSE(CM) > 4V
Minimum Programmable Frequency
Maximum Programmable Frequency
●
●
500
External Sync Frequency Range
●
100
SYNC Input Resistance
mA
μA
μA
20
8.3
V
V
V
mV
3
100
20
–150
3.7
mA
μA
μA
mA
1.231
1.238
1.245
1.35
120
100
–100
10
300
1.4
Soft-Start Capacitor Control Current
1.4
V
mV
36
115
V
mV
mV
mV
μA
μA
μA
330
kHz
100
kHz
kHz
600
kHz
kΩ
2
2
●
270
340
V
V
nA
40
●
μA
μA
μA
1.4
0.1
0.1
800
–20
–300
270
V
V
V
mV
5
400
25
●
UNITS
V
V
V
mV
8
6.25
500
●
Error Amp Transconductance
MAX
75
20
Operating Frequency
SYNC Voltage Threshold
3.8
670
20
20
9
VFB = 1.231V
SHDN Enable Threshold (Rising)
SHDN Threshold Hysteresis
TYP
4
●
VCC Supply Current (Note 6)
VCC Burst Mode Current
VCC Shutdown Current
VCC Current Limit
VFB Pin Input Current
MIN
V
μA
410
μS
Error Amp DC Voltage Gain
62
dB
Error Amp Sink/Source Current
±30
μA
3845fd
3
LT3845
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 20V, VCC = BOOST = BURST_EN = 10V, SHDN = 2V, RSET = 49.9kΩ,
SENSE – = SENSE+ = 10V, SGND = PGND = SW = SYNC = 0V, unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
TG, BG Drive On Voltage (Note 7)
TG, BG Drive Off Voltage
CLOAD = 3300pF
CLOAD = 3300pF
9.8
0.1
V
V
TG, BG Drive Rise/Fall Time
10% to 90% or 90% to 10%, CLOAD = 3300pF
50
ns
Minimum TG Off Time
●
350
650
ns
Minimum TG On Time
●
250
400
ns
Gate Drive Nonoverlap Time
TG Fall to BG Rise
BG Fall to TG Rise
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LT3845 includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
Note 3: The LT3845E is guaranteed to meet performance specifications
from 0°C to 125°C junction temperature. Specifications over the – 40°C
to 125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LT3845I is guaranteed over the full –40°C to 125°C operating junction
200
150
ns
ns
temperature range. The LT3845MP is 100% tested and guaranteed over
the –55°C to 125°C temperature range.
Note 4: VIN voltages below the start-up threshold (7.5V) are only
supported when the VCC is externally driven above 6.5V.
Note 5: Operating range is dictated by MOSFET absolute maximum VGS.
Note 6: Supply current specification does not include switch drive
currents. Actual supply currents will be higher.
Note 7: DC measurement of gate drive output “ON” voltage is typically
8.6V. Internal dynamic bootstrap operation yields typical gate “ON”
voltages of 9.8V during standard switching operation. Standard operation
gate “ON” voltage is not tested but guaranteed by design.
Note 8: The –2V absolute maximum on the SW pin is a transient condition.
It is guaranteed by design and not subject to test.
3845fd
4
LT3845
TYPICAL PERFORMANCE CHARACTERISTICS
Shutdown Threshold (Rising)
vs Temperature
Shutdown Threshold (Falling)
vs Temperature
1.37
1.36
1.35
1.34
1.33
1.32
–50 –25
0
25
50
75
TEMPERATURE (°C)
100
125
8.2
1.25
8.1
1.23
1.22
1.20
–50 –25
0
25
50
75
TEMPERATURE (°C)
100
7.5
–50 –25
125
ICC Current Limit vs Temperature
ICC = 20mA
TA = 25°C
200
ICC CURRENT LIMIT (mA)
VCC (V)
VCC (V)
6
5
7.90
4
15 20 25
ICC(LOAD) (mA)
30
35
3
40
100
4
5
8
7
6
9
10
11
50
–50
12
–25
6.4
20
6.3
15
5
100
125
3845 G07
0
0
2
4
125
350
TA = 25°C
10
6.1
100
Error Amp Transconductance
vs Temperature
ERROR AMP TRANSCONDUCTANCE (μS)
25
6.2
0
25
50
75
TEMPERATURE (°C)
3845 G06
ICC vs VCC (SHDN = 0V)
ICC (μA)
VCC UVLO THRESHOLD, RISING (V)
125
3845 G05
6.5
0
25
50
75
TEMPERATURE (°C)
150
75
3845 G04
6.0
–50 –25
175
VIN (V)
VCC UVLO Threshold (Rising)
vs Temperature
125
225
7
10
100
3845 G03
VCC vs VIN
9
8.00
5
0
25
50
75
TEMPERATURE (°C)
3845 G02
TA = 25°C
0
7.8
7.6
8
7.85
7.9
7.7
1.21
VCC vs ICC(LOAD)
7.95
ICC = 20mA
8.0
1.24
3845 G01
8.05
VCC vs Temperature
1.26
VCC (V)
SHUTDOWN THRESHOLD, FALLING (V)
SHUTDOWN THRESHOLD, RISING (V)
1.38
6
8
10 12 14 16 18 20
VCC (V)
3845 G08
345
340
335
330
325
320
–50 –25
50
25
75
0
TEMPERATURE (°C)
100
125
3845 G09
3845fd
5
LT3845
TYPICAL PERFORMANCE CHARACTERISTICS
Operating Frequency
vs Temperature
I(SENSE+ + SENSE–) vs VSENSE(CM)
800
Error Amp Reference
vs Temperature
1.234
308
TA = 25°C
306
400
200
0
–200
1.233
ERROR AMP REFERENCE (V)
OPERATING FREQUENCY (kHz)
I(SENSE+ + SENSE–) (μA)
600
304
302
300
298
296
294
290
–50
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VSENSE(CM) (V)
–25
0
25
50
75
TEMPERATURE (°C)
100
3845 G10
125
1.227
–50 –25
102
100
98
96
100
125
3845 G13
100
125
3845 G12
3.86
VIN UVLO THRESHOLD, FALLING (V)
104
50
25
75
0
TEMPERATURE (°C)
VIN UVLO Threshold (Falling)
vs Temperature
4.54
VIN UVLO THRESHOLD, RISING (V)
CURRENT SENSE THRESHOLD (mV)
1.229
VIN UVLO Threshold (Rising)
vs Temperature
106
50
25
75
0
TEMPERATURE (°C)
1.230
3845 G11
Maximum Current Sense
Threshold vs Temperature
94
–50 –25
1.231
1.228
292
–400
1.232
4.52
3.84
4.50
3.82
4.48
4.46
3.80
4.44
3.78
4.42
4.40
–50 –25
50
25
75
0
TEMPERATURE (°C)
100
125
3845 G14
3.76
–50 –25
50
25
75
0
TEMPERATURE (°C)
100
125
3845 G15
3845fd
6
LT3845
PIN FUNCTIONS
BG: The BG pin is the gate drive for the bottom N-channel
MOSFET. Since very fast high currents are driven from
this pin, connect it to the gate of the power MOSFET
with a short and wide, typically 0.02" width, PCB trace to
minimize inductance.
BOOST: The BOOST pin is the supply for the bootstrapped
gate drive and is externally connected to a low ESR ceramic
boost capacitor referenced to SW pin. The recommended
value of the BOOST capacitor, CBOOST, is at least 50 times
greater than the total gate capacitance of the topside MOSFET.
In most applications 0.1μF is adequate. The maximum voltage that this pin sees is VIN + VCC, ground referred.
BURST_EN: Burst Mode Operation Enable Pin. This pin
also controls reverse-current inhibit mode of operation.
When the pin voltage is below 0.5V, Burst Mode operation
and reverse-current inhibit functions are enabled. When
the pin voltage is above 0.5V, Burst Mode operation is disabled, but reverse-current inhibit operation is maintained.
In this mode of operation (BURST_EN = VFB) there is a
1mA minimum load requirement. Reverse-current inhibit
is disabled when the pin voltage is above 2.5V. This pin is
typically shorted to ground to enable Burst Mode operation
and reverse-current inhibit, shorted to VFB to disable Burst
Mode operation while enabling reverse-current inhibit,
and connected to VCC pin to disable both functions. See
Applications Information section.
CSS: The soft-start pin is used to program the supply softstart function. Use the following formula to calculate CSS
for a given output voltage slew rate:
CSS = 2μA(tSS/1.231V)
circuit. Connect the pin directly to the negative terminal of
the VCC decoupling capacitor. See the Application Information section for helpful hints on PCB layout of grounds.
SENSE–: The SENSE– pin is the negative input for the
current sense amplifier and is connected to the VOUT
side of the sense resistor for step-down applications. The
sensed inductor current limit is set to ±100mV across the
SENSE inputs.
SENSE+: The SENSE+ pin is the positive input for the
current sense amplifier and is connected to the inductor
side of the sense resistor for step-down applications. The
sensed inductor current limit is set to ±100mV across the
SENSE inputs.
SGND: The SGND pin is the low noise ground reference.
It should be connected to the –VOUT side of the output
capacitors. Careful layout of the PCB is necessary to keep
high currents away from this SGND connection. See the
Application Information section for helpful hints on PCB
layout of grounds.
SHDN: The SHDN pin has a precision IC enable threshold
of 1.35V (rising) with 120mV of hysteresis. It is used to
implement an undervoltage lockout (UVLO) circuit. See
Application Information section for implementing a UVLO
function. When the SHDN pin is pulled below a transistor
VBE (0.7V), a low current shutdown mode is entered, all
internal circuitry is disabled and the VIN supply current
is reduced to approximately 9μA. Typical pin input bias
current is VOUT •
2DCMAX – 1 RSENSE • 8.33
•
DCMAX
fSW
The magnetics vendors specify either the saturation current, the RMS current or both. When selecting an inductor
based on inductor saturation current, use the peak current through the inductor, IOUT(MAX) + ΔIL/2. The inductor
saturation current specification is the current at which
the inductance, measured at zero current, decreases by
a specified amount, typically 30%.
When selecting an inductor based on RMS current rating,
use the average current through the inductor, IOUT(MAX).
The RMS current specification is the RMS current at which
the part has a specific temperature rise, typically 40°C,
above 25°C ambient.
After calculating the minimum inductance value, the
volt-second product, the saturation current and the RMS
current for your design, select an off-the-shelf inductor.
Contact the Application group at Linear Technology for
further support.
For more detailed information on selecting an inductor,
please see the “Inductor Selection” section of Linear
Technology Application Note 44.
MOSFET Selection
The selection criteria of the external N-channel standard
level power MOSFETs include on resistance (RDS(ON)),
reverse transfer capacitance (CRSS), maximum drain
source voltage (VDSS), total gate charge (QG) and maximum
continuous drain current.
For maximum efficiency, minimize RDS(ON) and CRSS.
Low RDS(ON) minimizes conduction losses while low CRSS
minimizes transition losses. The problem is that RDS(ON)
is inversely related to CRSS. In selecting the top MOSFET
balancing the transition losses with the conduction losses
is a good idea while the bottom MOSFET is dominated by
the conduction loss, which is worse during a short-circit
condition or at a very low duty cycle.
Calculate the maximum conduction losses of the
MOSFETs:
PCOND(TOP) =IOUT(MAX)2 •
VOUT
•RDS(ON)
VIN
PCOND(BOT) =IOUT(MAX)2 •
VIN – VOUT
•RDS(ON)
VIN
Note that RDS(ON) has a large positive temperature dependence. The MOSFET manufacturer’s data sheet contains a
curve, RDS(ON) vs Temperature.
In the main MOSFET, transition losses are proportional
to VIN2 and can be considerably large in high voltage applications (VIN > 20V). Calculate the maximum transition
losses:
PTRAN(TOP) = k • VIN2 • IOUT(MAX) • CRSS • fSW
where k is a constant inversely related to the gate driver
current, approximated by k = 2 for LT3845 applications.
The total maximum power dissipations of the MOSFET
are:
PTOP(TOTAL) = PCOND(MAIN) + PTRAN(MAIN)
PBOT(TOTAL) = PCOND(SYNC)
To achieve high supply efficiency, keep the total power dissipation in each switch to less than 3% of the total output
power. Also, complete a thermal analysis to ensure that
the MOSFET junction temperature is not exceeded.
TJ = TA + P(TOTAL) • θJA
where θJA is the package thermal resistance and TA is the
ambient temperature. Keep the calculated TJ below the maximum specified junction temperature, typically 150°C.
Note that when VIN is high and fSW is high, the transition
losses may dominate. A MOSFET with higher RDS(ON)
and lower CRSS may provide higher efficiency. MOSFETs
with higher voltage VDSS specification usually have higher
RDS(ON) and lower CRSS.
3845fd
15
LT3845
APPLICATIONS INFORMATION
Choose the MOSFET VDSS specification to exceed the
maximum voltage across the drain to the source of the
MOSFET, which is VIN(MAX) plus any additional ringing
on the switch node. Ringing on the switch node can be
greatly reduced with good PCB layout and, if necessary,
an RC snubber.
In some applications, parasitic FET capacitances couple
the negative going switch node transient onto the bottom
gate drive pin of the LT3845, causing a negative voltage
in excess of the Absolute Maximum Rating to be imposed
on that pin. Connection of a catch Schottky diode from
this pin to ground will eliminate this effect. A 1A current
rating is typically sufficient of the diode.
The internal VCC regulator is capable of sourcing up to
40mA limiting the maximum total MOSFET gate charge,
QG, to 35mA/fSW. The QG vs VGS specification is typically
provided in the MOSFET data sheet. Use QG at VGS of 8V.
If VCC is back driven from an external supply, the MOSFET
drive current is not sourced from the internal regulator
of the LT3845 and the QG of the MOSFET is not limited
by the IC. However, note that the MOSFET drive current
is supplied by the internal regulator when the external
supply back driving VCC is not available such as during
start-up or short circuit.
The manufacturer’s maximum continuous drain current
specification should exceed the peak switch current,
IOUT(MAX) + ΔIL/2.
During the supply start-up, the gate drive levels are set by
the VCC voltage regulator, which is approximately 8V. Once
the supply is up and running, the VCC can be back driven
by an auxiliary supply such as VOUT. It is important not to
exceed the manufacturer’s maximum VGS specification.
A standard level threshold MOSFET typically has a VGS
maximum of 20V.
Input Capacitor Selection
A local input bypass capacitor is required for buck converters because the input current is pulsed with fast rise and
fall times. The input capacitor selection criteria are based
on the bulk capacitance and RMS current capability. The
bulk capacitance will determine the supply input ripple
voltage. The RMS current capability is used to prevent
overheating the capacitor.
16
The bulk capacitance is calculated based on maximum
input ripple, ΔVIN:
CIN(BULK) =
IOUT(MAX) • VOUT
ΔVIN • fSW • VIN(MIN)
ΔVIN is typically chosen at a level acceptable to the user.
100mV to 200mV is a good starting point. Aluminum electrolytic capacitors are a good choice for high voltage, bulk
capacitance due to their high capacitance per unit area.
The capacitor’s RMS current is:
ICIN(RMS) =IOUT
VOUT (VIN – VOUT )
(VIN )2
If applicable, calculate it at the worst case condition,
VIN = 2VOUT. The RMS current rating of the capacitor
is specified by the manufacturer and should exceed the
calculated ICIN(RMS). Due to their low ESR (Equivalent
Series Resistance), ceramic capacitors are a good choice
for high voltage, high RMS current handling. Note that the
ripple current ratings from aluminum electrolytic capacitor
manufacturers are based on 2000 hours of life. This makes
it advisable to further derate the capacitor or to choose a
capacitor rated at a higher temperature than required.
The combination of aluminum electrolytic capacitors and
ceramic capacitors is an economical approach to meeting the input capacitor requirements. The capacitor voltage rating must be rated greater than VIN(MAX). Multiple
capacitors may also be paralleled to meet size or height
requirements in the design. Locate the capacitor very close
to the MOSFET switch and use short, wide PCB traces to
minimize parasitic inductance.
Output Capacitor Selection
The output capacitance, COUT, selection is based on the
design’s output voltage ripple, ΔVOUT and transient load
requirements. ΔVOUT is a function of ΔIL and the COUT
ESR. It is calculated by:
VOUT = IL • ESR +
1
(8 • fSW • COUT )
3845fd
LT3845
APPLICATIONS INFORMATION
The maximum ESR required to meet a ΔVOUT design
requirement can be calculated by:
( VOUT )(L)(fSW)
ESR(MAX) =
VOUT • 1–
VOUT
The VFB pin input bias current is typically 25nA, so use
of extremely high value feedback resistors could cause a
converter output that is slightly higher than expected. Bias
current error at the output can be estimated as:
ΔVOUT(BIAS) = 25nA • R2
VIN(MAX)
Supply UVLO and Shutdown
Worst-case ΔVOUT occurs at highest input voltage. Use
paralleled multiple capacitors to meet the ESR requirements. Increasing the inductance is an option to lower the
ESR requirements. For extremely low ΔVOUT, an additional
LC filter stage can be added to the output of the supply.
Application Note 44 has some good tips on sizing an additional output filter.
Output Voltage Programming
Resistors are chosen by first selecting RB. Then
A resistive divider sets the DC output voltage according
to the following formula:
R2 = R1
VOUT
–1
1.231V
RA = RB •
VSUPPLY(ON)
1.35V
–1
VSUPPLY(ON) is the input voltage at which the undervoltage
lockout is disabled and the supply turns on.
The external resistor divider is connected to the output
of the converter as shown in Figure 3. Tolerance of the
feedback resistors will add additional error to the output
voltage.
Example: VOUT = 12V; R1 = 10kΩ
R2 = 10k
The SHDN pin has a precision voltage threshold with
hysteresis which can be used as an undervoltage lockout
threshold (UVLO) for the power supply. Undervoltage
lockout keeps the LT3845 in shutdown until the supply
input voltage is above a certain voltage programmed by
the user. The hysteresis voltage prevents noise from falsely
tripping UVLO.
12V
1 = 87.48k
1.231V
Example: Select RB = 49.9kΩ, VSUPPLY(ON) = 14.5V (based
on a 15V minimum input voltage)
R A = 49.9k •
= 486.1k
14.5V
–1
1.35V
(499k
resistor is selected)
use 86.6k 1%
L1
VOUT
R2
VSUPPLY
COUT
RA
SHDN PIN
VFB PIN
R1
3845 F03
Figure 3. Output Voltage Feedback Divider
RB
3845 F04
Figure 4. Undervoltage Feedback Divider
3845fd
17
LT3845
APPLICATIONS INFORMATION
If low supply current in standby mode is required, select
a higher value of RB.
The supply turn off voltage is 9% below turn on. In the
example the VSUPPLY(OFF) would be 13.2V.
If additional hysteresis is desired for the enable function,
an external positive feedback resistor can be used from
the LT3845 regulator output.
The shutdown function can be disabled by connecting the
SHDN pin to the VIN through a large value pull-up resistor.
This pin contains a low impedance clamp at 6V, so the SHDN
pin will sink current from the pull-up resistor(RPU):
ISHDN =
VIN – 6V
RPU
Because this arrangement will clamp the SHDN pin to the
6V, it will violate the 5V absolute maximum voltage rating of
the pin. This is permitted, however, as long as the absolute
maximum input current rating of 1mA is not exceeded.
Input SHDN pin currents of t
VIN • fSW ON(MIN)
where tON(MIN) is 400ns worst case.
If the duty cycle falls below what can be accommodated by
the minimum on-time, the LT3845 will begin to skip cycles.
The output will be regulated, but the ripple current and
ripple voltage will increase. If lower frequency operation
is acceptable, the on-time can be increased above tON(MIN)
for the same step-down ratio.
Layout Considerations
The LT3845 is typically used in DC/DC converter designs
that involve substantial switching transients. The switch
drivers on the IC are designed to drive large capacitances
and, as such, generate significant transient currents
themselves. Careful consideration must be made regarding supply bypass capacitor locations to avoid corrupting
the ground reference used by IC.
Typically, high current paths and transients from the
input supply and any local drive supplies must be kept
isolated from SGND, to which sensitive circuits such as
the error amp reference and the current sense circuits
are referred.
Effective grounding can be achieved by considering switch
current in the ground plane, and the return current paths of
each respective bypass capacitor. The VIN bypass return,
VCC bypass return, and the source of the synchronous
3845fd
18
LT3845
APPLICATIONS INFORMATION
FET carry PGND currents. SGND originates at the negative
terminal of the VOUT bypass capacitor, and is the small
signal reference for the LT3845.
Don’t be tempted to run small traces to separate ground
paths. A good ground plane is important as always,
but PGND referred bypass elements must be oriented
such that transient currents in these return paths do not
corrupt the SGND reference.
During the dead-time between switch conduction, the
body diode of the synchronous FET conducts inductor
current. Commutating this diode requires a significant
charge contribution from the main switch. At the instant
the body diode commutates, a current discontinuity is
created and parasitic inductance causes the switch node
to fly up in response to this discontinuity. High currents
and excessive parasitic inductance can generate extremely fast dV/dt rise times. This phenomenon can cause
avalanche breakdown in the synchronous FET body diode, significant inductive overshoot on the switch node,
and shoot-through currents via parasitic turn-on of the
synchronous FET. Layout practices and component orientations that minimize parasitic inductance on this node
is critical for reducing these effects.
Ringing waveforms in a converter circuit can lead to device
failure, excessive EMI, or instability. In many cases, you
can damp a ringing waveform with a series RC network
across the offending device. In LT3845 applications, any
ringing will typically occur on the switch node, which
can usually be reduced by placing a snubber across the
synchronous FET. Use of a snubber network, however,
should be considered a last resort. Effective layout practices
typically reduce ringing and overshoot, and will eliminate
the need for such solutions.
Effective grounding techniques are critical for successful
DC/DC converter layouts. Orient power path components
such that current paths in the ground plane do not cross
through signal ground areas. Signal ground refers to
the Exposed Pad on the backside of the LT3845 IC in the
TSSOP package. SGND is referenced to the (–) terminal
of the VOUT decoupling capacitor and is used as the converter voltage feedback reference. Power ground currents
are controlled on the LT3845 via the PGND pin, and this
ground references the high current synchronous switch
drive components, as well as the local VCC supply. It is
important to keep PGND and SGND voltages consistent
with each other, so separating these grounds with thin
traces is not recommended. When the synchronous
FET is turned on, gate drive surge currents return to the
LT3845 PGND pin from the FET source. The BOOST supply
refresh surge currents also return through this same path.
The synchronous FET must be oriented such that these
PGND return currents do not corrupt the SGND reference.
Problems caused by the PGND return path are generally
recognized during heavy load conditions, and are typically
evidenced as multiple switch pulses occurring during a
single switch cycle. This behavior indicates that SGND is
being corrupted and grounding should be improved. SGND
corruption can often be eliminated, however, by adding a
small capacitor (100pF to 200pF) across the synchronous
switch FET from drain to source.
The high di/dt loop formed by the switch MOSFETs and
the input capacitor (CIN) should have short wide traces
to minimize high frequency noise and voltage stress from
inductive ringing. Surface mount components are preferred
to reduce parasitic inductances from component leads.
Connect the drain of the main switch MOSFET directly to
the (+) plate of CIN, and connect the source of the synchronous switch MOSFET directly to the (–) terminal of
CIN. This capacitor provides the AC current to the switch
MOSFETs. Switch path currents can be controlled by
orienting switch FETs, the switched inductor, and input
and output decoupling capacitors in close proximity to
each other.
Locate the VCC and BOOST decoupling capacitors in close
proximity to the IC. These capacitors carry the MOSFET
drivers’ high peak currents. Locate the small-signal
components away from high frequency switching nodes
(BOOST, SW, TG, VCC and BG). Small-signal nodes are
oriented on the left side of the LT3845, while high current
switching nodes are oriented on the right side of the IC
to simplify layout. This also helps prevent corruption of
the SGND reference.
Connect the VFB pin directly to the feedback resistors
independent of any other nodes, such as the SENSE– pin.
The feedback resistors should be connected between
the (+) and (–) terminals of the output capacitor (COUT).
3845fd
19
LT3845
APPLICATIONS INFORMATION
Locate the feedback resistors in close proximity to the
LT3845 to minimize the length of the high impedance
VFB node.
The SENSE– and SENSE+ traces should be routed together
and kept as short as possible.
The LT3845 TSSOP package has been designed to efficiently remove heat from the IC via the Exposed Pad on
the backside of the package. The Exposed Pad is soldered
to a copper footprint on the PCB. This footprint should be
made as large as possible to reduce the thermal resistance
of the IC case to ambient air.
Orientation of Components Isolates Power Path and PGND Currents,
Preventing Corruption of SGND Reference
VIN
BOOST
SW
TG
LT3845
VCC
SGND PGND
SW
BG
+
SGND
REFERRED
COMPONENTS
+
3845 AI03
VOUT
ISENSE
3845fd
20
LT3845
TYPICAL APPLICATIONS
9V-16V to 3.3V at 10A DC/DC Converter Capable of Withstanding 60V Transients,
All Ceramic Capacitors and Soft-Start Enabled
VIN
9V TO 16V
60V TRANSIENTS
CIN
2.2μF
100V
×4
CIN2
0.1μF
100V
C5
1μF
16V
R3
1.1M
VIN
BOOST
SHDN
CSS
C3
8200pF
BURST_EN
R2
16.9k
R4
25k
R5
100k
D1
VCC
D2A BAV99
BG
VC
SYNC
SENSE+
fSET
SENSE–
SGND
VOUT
3.3V
10A
COUT
100μF
6.3V
×5
C4
2.2μF
16V
C2
R6
6800pF 49.9k
RSENSE
0.006Ω
M2
Si7370DP
PGND
SYNC
CIN: TDK C4532X7R2A225K
COUT: MURATA GRM32ER60J107ME20
D1: DIODES INC. B3100
L1: WURTH 7443551370
L1
3.3μH
SW
VFB
R1
10k
M1
Si7370DP
TG
LT3845
VIN
R7
4.99k
D3
12V
D2B
BAV99
Q1
60V
3845 TA02
Efficiency and Power Loss
6
95
5
VIN = 9V
4
85
80
VIN = 14V
3
VIN = 16V
2
75
70
POWER LOSS
VIN = 14V
65
0.1
1
LOAD CURRENT (A)
POWER LOSS (W)
BATTERY VOLTAGE (V)
90
1
0
10
3845 TA02b
3845fd
21
LT3845
TYPICAL APPLICATIONS
9V-16V to 5V at 10A DC/DC Converter, 500kHz Frequency Operation,
Capable of Withstanding 36V Transients, All Ceramic Capacitors, Soft-Start and Burst Mode Enabled
VIN
9V TO 16V
36V TRANSIENTS
CIN
6.8μF
50V
×4
CIN2
0.1μF
50V
C5
1μF
16V
R3
1.1M
VIN
C3
8200pF
BOOST
SHDN
CSS
BURST_EN
VC
R2
154k
C1
100pF
R4
10k
L1
2.7μH
SW
D1
VCC
D2 BAS19
BG
VFB
R1
49.9k
M1
Si7884DP
TG
LT3845
COUT
100μF
6.3V
×4
+
SENSE
fSET
SENSE–
C4
2.2μF
16V
SGND
VOUT
5V
10A
M2
Si7884DP
PGND
SYNC
RSENSE
0.005Ω
C2
R6
5600pF 23.2k
3845 TA03
D3B
BAV99
CIN: TDK C4532X7R1H685K
COUT: MURATA GRM32ER60J107ME20
D1: DIODES INC. B170
L1: WURTH 744318270LF
D3A
BAV99
C6
1μF
Si1555DL
Efficiency and Power Loss
6
100
5
VIN = 9V
90
85
4
3
VIN = 14V
80
2
VIN = 16V
POWER LOSS (W)
EFFICIENCY (%)
95
1
75
POWER LOSS
VIN = 14V
70
0.1
1
LOAD CURRENT (A)
0
10
3845 TA03b
3845fd
22
LT3845
TYPICAL APPLICATIONS
9V-24V to 3.3V, 2-Phase at 10A per Phase, DC/DC Converter with Spread Spectrum Operation
VIN
24V
CIN
6.8μF
50V
×2
C5
1μF
16V
R3
1.21M
VIN
BOOST
SHDN
C3 8200pF
R4
1.21M
CSS
BURST_EN
SYNC
SENSE+
fSET
SENSE–
R6
130k
D2 BAS19
L1
4.7μH
D1
B160
M2
Si7850DP
SGND
C4
2.2μF
16V
VOUT
3.3V
20A
R12
25k
Q1
D5
5.7V
CIN3
0.1μF
100V
R11
500k
C10
1μF
16V
VIN
1
C11
0.1μF
6
SYNC1
V+
OUT1
LTC6908-1
2
5
SYNC2
GND OUT2
3
4
SET3 MOD
CSS
R2
16.8k
CIN: TDK C4532X7R1H685K
COUT: MURATA GRM32ER60J107ME20
D1, D3: DIODES, INC. B160
L1, L2: VISHAY IHLP-5050FD-01
D4 BAS19
L2
4.7μH
RSENSE2
0.005Ω
D3
B160
M4
Si7850DP
PGND
VC
SYNC
R9
4.99k
C7
R10
5600pF 130k
SW
VCC
BG
VFB
C6
47pF
M3
Si7850DP
TG
LT3845
BURST_EN
R1
10k
COUT
100μF
6.3V
×6
BOOST
SHDN
C8 8200pF
RSENSE
0.005Ω
PGND
VC
SYNC
SW
VCC
BG
VFB
C11
47pF
M1
Si7850DP
TG
LT3845
SYNC
SENSE+
fSET
SENSE–
SGND
C9
2.2μF
16V
3845 TA05
3845fd
23
LT3845
PACKAGE DESCRIPTION
FE Package
16-Lead Plastic TSSOP (4.4mm)
(Reference LTC DWG # 05-08-1663)
Exposed Pad Variation BC
4.90 – 5.10*
(.193 – .201)
3.58
(.141)
3.58
(.141)
16 1514 13 12 1110
6.60 p0.10
9
2.94
(.116)
4.50 p0.10
6.40
2.94
(.252)
(.116)
BSC
SEE NOTE 4
0.45 p0.05
1.05 p0.10
0.65 BSC
1 2 3 4 5 6 7 8
RECOMMENDED SOLDER PAD LAYOUT
4.30 – 4.50*
(.169 – .177)
0.09 – 0.20
(.0035 – .0079)
0.25
REF
1.10
(.0433)
MAX
0o – 8o
0.65
(.0256)
BSC
0.50 – 0.75
(.020 – .030)
NOTE:
1. CONTROLLING DIMENSION: MILLIMETERS
MILLIMETERS
2. DIMENSIONS ARE IN
(INCHES)
3. DRAWING NOT TO SCALE
0.05 – 0.15
(.002 – .006)
0.195 – 0.30
(.0077 – .0118)
TYP
FE16 (BC) TSSOP 0204
4. RECOMMENDED MINIMUM PCB METAL SIZE
FOR EXPOSED PAD ATTACHMENT
*DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.150mm (.006") PER SIDE
N Package
16-Lead PDIP
(Reference LTC DWG # 05-08-1510)
.770*
(19.558)
MAX
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
.255 p .015*
(6.477 p 0.381)
.130 p .005
(3.302 p 0.127)
.300 – .325
(7.620 – 8.255)
.008 – .015
(0.203 – 0.381)
+.035
.325 –.015
+0.889
8.255
–0.381
NOTE:
1. DIMENSIONS ARE
.045 – .065
(1.143 – 1.651)
.020
(0.508)
MIN
.065
(1.651)
TYP
.120
(3.048)
MIN
.100
(2.54)
BSC
INCHES
MILLIMETERS
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .010 INCH (0.254mm)
.018 p .003
(0.457 p 0.076)
N16 1002
3845fd
24
LT3845
REVISION HISTORY
(Revision history begins at Rev D)
REV
DATE
DESCRIPTION
PAGE NUMBER
D
1/10
Updated Features and Description
1
Revised Absolute Maximum Ratings, Pin Configuration and Order Information to Add New Package
and Grade Options
2
Revised Electrical Characteristics
3, 4
Revised Pin Functions
7, 8
Updated Block Diagram
9
Revised Oscillator SYNC Section
Revised Typical Applications
Updated Related Parts List
18
21, 22, 23, 26
26
3845fd
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
25
LT3845
TYPICAL APPLICATION
9V-16V to 3.3V at 5A DC/DC Converter, Frequency Synchronization Range 150kHz to 300kHz,
Capable of Withstanding 60V Transients, All Ceramic Capacitors, Soft-Start and Burst Mode Enabled
VIN
9V TO 16V
60V TRANSIENTS
CIN
2.2μF
100V
×4
CIN2
0.1μF
100V
C5
1μF
16V
R3
1.1M
VIN
C3
8200pF
BOOST
SHDN
CSS
C1
R2
16.8k 100pF
SYNC
R4
10k
C2
5600pF
R5
100k
RSENSE
0.01Ω
VOUT
3.3V
5A
D1
B160
VCC
BG
VFB
VC
L1
10μH
SW
BURST_EN
R1
10k
M1
Si7850DP
TG
LT3845
D2 BAS521
M2
Si7850DP
PGND
COUT
100μF
6.3V
×4
+
SYNC
SENSE
fSET
SENSE–
SGND
C4
2.2μF
16V
R6
130k
3845 TA04
CIN: TDK C4532X7R2A225K
COUT: MURATA GRM32ER60J107ME20
L1: VISHAY IHLP-5050FD-01
M1, M2: VISHAY Si7850DP
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT3800
High Voltage Low IQ Synchronous Step-Down DC/DC
Controller
Fixed 200kHz Operating Frequency 4V≤ VIN ≤ 60V, 1.23V ≤ VOUT ≤ 36V,
IQ = 100μA, TSSOP-16
LT3844
High Voltage Low IQ Switching Regulator DC/DC Controller Synchronizable Fixed Operating Frequency 100kHz to 600kHz,
4V ≤ VIN ≤ 60V, 1.23V ≤ VOUT ≤ 36V, IQ = 120μA, TSSOP-16
LT3724
High Voltage Low IQ Switching Regulator DC/DC Controller Fixed 200kHz Operating Frequency 4V ≤ VIN ≤ 60V, 1.23V ≤ VOUT ≤ 36V,
IQ = 100μA, TSSOP-16
LTC3812-5
High Voltage Synchronous Step-Down DC/DC Controller
4.2V ≤ VIN ≤ 60V, 0.8V ≤ VOUT ≤ 0.9VIN, TSSOP-16
LTC3810
100V Synchronous Step-Down DC/DC Controller
6.2V ≤ VIN ≤ 100V, 0.8V ≤ VOUT ≤ 0.9VIN, SSOP-28
LT3758
100V Boost, Flyback, SEPIC and Inverting Controller
5.5V ≤ VIN ≤ 100V, Selectable Operating Frequency 100kHz to 1MHz
3mm × 3mm DFN-10 and MSOP-10E Package
LT3757
Boost, Flyback, SEPIC and Inverting Controller
2.9V ≤ VIN ≤ 40V, Selectable Operating Frequency 100kHz to 1MHz
3mm × 3mm DFN-10 and MSOP-10E Package
LTC3824
High Voltage Low IQ DC/DC Controller, 100% Duty Cycle
Selectable Fixed Operating Frequency 200kHz to 600kHz 4V ≤ VIN ≤ 60V,
0.8V ≤ VOUT ≤ VIN, IQ = 40μA, MSOP-10E
LTC3834/
LTC3834-1
Low IQ, Synchronous Step-Down Controllers
30μA IQ, 4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ 10V
LTC3835/
LTC3835-1
Low IQ, Synchronous Step-Down Controllers
80μA IQ, 4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ 10V
LTC3857/
LTC3857-1
Low IQ, Dual Output 2-Phase Synchronous Step-Down
DC/DC Controller with 99% Duty Cycle
Phase-Lockable Fixed Operating Frequency 50kHz to 900kHz,
4V ≤ VIN ≤ 38V, 0.8V ≤ VOUT ≤ 24V, IQ = 50μA
LTC3858/
LTC3858-1
Low IQ, Dual Output 2-Phase Synchronous Step-Down
DC/DC Controller with 99% Duty Cycle
Phase-Lockable Fixed Operating Frequency 50kHz to 900kHz,
4V ≤ VIN ≤ 38V, 0.8V ≤ VOUT ≤ 24V, IQ = 170μA,
3845fd
26 Linear Technology Corporation
LT 0110 REV D • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
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