LT5519EUF#TRPBF

LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer U FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Wide RF Frequency Range: 0.7GHz to 1.4GHz 17.1dBm Typical Input IP3 at 1GHz On-Chip RF Output Transformer On-Chip 50Ω Matched LO and RF Ports Single-Ended LO and RF Operation Integrated LO Buffer: –5dBm Drive Level Low LO to RF Leakage: – 44dBm Typical Noise Figure: 13.6dB Wide IF Frequency Range: 1MHz to 400MHz Enable Function with Low Off-State Leakage Current Single 5V Supply Small 16-Lead QFN Plastic Package U APPLICATIO S ■ ■ ■ ■ Wireless Infrastructure Cable Downlink Infrastructure Point-to-Point and Point-to-Multipoint Data Communications High Linearity Frequency Conversion The LT®5519 mixer is designed to meet the high linearity requirements of wireless and cable infrastructure transmission systems. A high speed, internally 50Ω matched, LO amplifier drives a double-balanced mixer core, allowing the use of a low power, single-ended LO source. An RF output transformer is integrated, thus eliminating the need for external matching components at the RF output, while reducing system cost, component count, board area and system-level variations. The IF port can be easily matched to a broad range of frequencies for use in many different applications. The LT5519 mixer delivers +17.1dBm typical input 3rd order intercept point at 1GHz with IF input signal levels of –10dBm. The input 1dB compression point is typically +5.5dBm. The IC requires only a single 5V supply. , LTC and LT are registered trademarks of Linear Technology Corporation. U TYPICAL APPLICATIO 5VDC 1µF RF Output Power, IM3 and IM2 vs IF Input Power (Two Input Tones) 1000pF 39nH 10 BPF 220pF VCC1 VCC2 VCC3 BIAS 100Ω 0 10pF LT5519 4:1 IF + RF + 33pF IF – 220pF RF – 100Ω GND 5pF (OPTIONAL) LO INPUT –5dBm LO+ 85Ω 5pF BPF PA POUT, IM3, IM2 (dBm/TONE) EN POUT –10 –20 –30 –40 –50 –60 fRF = 1000MHz PLO = –5dBm fLO = 1140MHz fIF1 = 140MHz fIF2 = 141MHz TA = 25°C –70 IM2 –80 –90 –16 LO – IM3 5519 F01a –12 –4 0 –8 IF INPUT POWER (dBm/TONE) 4 5519 F01b Figure 1. Frequency Conversion in Wireless Infrastructure Transmitter 5519f 1 LT5519 U U W U PACKAGE/ORDER I FOR ATIO (Note 1) ORDER PART NUMBER GND GND TOP VIEW 16 15 14 13 12 GND GND 1 IF + 2 IF – 3 LT5519EUF 11 RF + 17 10 RF – 9 GND 5 6 7 8 EN VCC2 VCC3 GND 4 VCC1 Supply Voltage ....................................................... 5.5V Enable Voltage ............................. –0.3V to (VCC + 0.3V) LO Input Power (Differential) ............................ +10dBm LO+ to LO– Differential DC Voltage .......................... ±1V LO+ and LO– DC Common Mode Voltage ...... –1V to VCC IF Input Power (Differential) ............................. +10dBm IF+ and IF – DC Currents ........................................ 25mA RF+ to RF – Differential DC Voltage ...................... ±0.13V RF+ and RF – DC Common Mode Voltage ...... –1V to VCC Operating Temperature Range .................–40°C to 85°C Storage Temperature Range ................. – 65°C to 125°C Junction Temperature (TJ).................................... 125°C LO+ W AXI U RATI GS LO– W W ABSOLUTE UF PART MARKING UF PACKAGE 16-LEAD (4mm × 4mm) PLASTIC QFN TJMAX = 125°C, θJA = 37°C/W EXPOSED PAD (PIN 17) IS GND MUST BE SOLDERED TO PCB 5519 Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS MIN TYP MAX UNITS IF Input Frequency Range 1 to 400 MHz LO Input Frequency Range 300 to 1800 MHz RF Output Frequency Range 700 to 1400 MHz 1GHz Application: VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1GHz, unless otherwise noted. (Test circuit shown in Figure 2) (Notes 2, 3) PARAMETER CONDITIONS IF Input Return Loss ZO = 50Ω, with External Matching 20 dB LO Input Return Loss ZO = 50Ω 17 dB RF Output Return Loss ZO = 50Ω LO Input Power MIN TYP 20 –10 to 0 Conversion Gain MAX UNITS dB dBm –0.6 dB 17.1 dBm 48 dBm LO to RF Leakage –44 dBm LO to IF Leakage –40 dBm Input 1dB Compression 5.5 dBm Input 3rd Order Intercept –10dBm/Tone, ∆f = 1MHz Input 2nd Order Intercept –10dBm, Single Tone IF Common Mode Voltage Internally Biased 1.77 VDC Noise Figure Single-Side Band 13.6 dB 5519f 2 LT5519 DC ELECTRICAL CHARACTERISTICS (Test Circuit Shown in Figure 2) VCC = 5VDC, EN = High, TA = 25°C, unless otherwise noted. (Note 3) PARAMETER CONDITIONS MIN TYP MAX UNITS Enable (EN) Low = OFF, High = ON Turn-On Time (Note 4) 2 µs Turn-Off Time (Note 4) 6 µs Input Current VENABLE = 5VDC 1 Enable = High (ON) 10 3 µA VDC Enable = Low (OFF) 0.5 VDC Power Supply Requirements (VCC) Supply Voltage 4.5 to 5.25 VDC Supply Current VCC = 5VDC 60 70 mA Shutdown Current EN = Low 1 100 µA Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: External components on the final test circuit are optimized for operation at fRF = 1GHz, fLO = 1.14GHz and fIF = 140MHz. Note 3: Specifications over the –40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process controls. Note 4: Turn-On and Turn-Off times are based on the rise and fall times of the RF output envelope from –40dBm to full power with an IF input power of –10dBm. U W TYPICAL PERFOR A CE CHARACTERISTICS Shutdown Current vs Supply Voltage Supply Current vs Supply Voltage 1.2 66 TA = 85°C 62 1.0 SHUTDOWN CURRENT (µA) SUPPLY CURRENT (mA) 64 TA = 25°C 60 58 TA = –40°C 56 54 0.8 TA = 85°C 0.6 0.4 TA = –40°C 0.2 52 50 (Test Circuit Shown in Figure 2) TA = 25°C 0 4 4.25 4.5 5 5.25 4.75 SUPPLY VOLTAGE (V) 5.5 5519 G01 4 4.25 4.5 4.75 5 SUPPLY VOLTAGE (V) 5.25 5.5 5519 G02 5519f 3 LT5519 U W TYPICAL PERFOR A CE CHARACTERISTICS VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1000MHz, unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.) Conversion Gain and SSB Noise Figure vs RF Output Frequency IIP3 and IIP2 vs RF Output Frequency 25 16 HIGH SIDE LO 14 IIP3 (dBm) 8 6 4 2 21 40 19 30 17 LOW SIDE LO 15 LOW SIDE AND HIGH SIDE LO –6 500 700 1100 1300 900 RF OUTPUT FREQUENCY (MHz) 13 500 1500 0 1500 700 900 1100 1300 RF OUTPUT FREQUENCY (MHz) 20 14 18 NF IIP3 (dBm) GAIN (dB) 8 4 GAIN 2 TA = 25°C TA = –40°C 18 30 IIP3 TA = 25°C 20 16 –12 –6 –4 –8 LO INPUT POWER (dBm) –2 0 15 –16 –12 –8 –4 0 LO INPUT POWER (dBm) 5519 G06 –60 –16 50 40 18 30 HIGH SIDE LO 17 20 LOW SIDE LO 16 10 IIP2 (dBm) 19 POUT, IM3 (dBm/TONE) –10 HIGH SIDE LO 0 –8 –4 0 LO INPUT POWER (dBm) –8 –4 0 LO INPUT POWER (dBm) POUT RF Output Power and Output IM2 vs IF Input Power (Two Input Tones) –30 0 TA = –40°C TA = 85°C –20 TA = 25°C –10 TA = 25°C –40 TA = –40°C –50 TA = 85°C –60 –70 4 5519 G09 4 5519 G08 IM3 –90 –16 POUT 4 5519 G10 TA = 25°C –30 –40 –50 TA = –40°C –60 TA = 25°C IM2 –80 –12 –4 0 –8 IF INPUT POWER (dBm/TONE) TA = –40°C TA = 85°C –20 –70 –80 –12 –12 TA = –40°C 10 0 IIP2 20 IIP3 (dBm) 0 4 10 60 LOW SIDE LO TA = 25°C –50 RF Output Power and Output IM3 vs IF Input Power (Two Input Tones) 21 15 –16 TA = 85°C –40 5519 G07 IIP3 and IIP2 vs LO Input Power IIP3 –30 10 TA = 85°C 2 TA = 85°C –4 –16 –20 TA = –40°C 4 –2 –10 40 17 6 0 50 IIP2 (dBm) 10 6 TA = 25°C TA = 85°C 19 NF (dB) 12 TA = –40°C 0 IIP2 14 8 60 TA = –40°C 20 1500 LO-RF Leakage vs LO Input Power 21 16 10 700 1100 1300 900 RF OUTPUT FREQUENCY (MHz) 5519 G05 IIP3 and IIP2 vs LO Input Power 16 TA = 25°C –60 500 5519 G04 Conversion Gain and SSB Noise Figure vs LO Input Power TA = 85°C –50 10 5519 G03 12 HIGH SIDE LO –40 LOW SIDE LO GAIN –4 20 –30 LO LEAKAGE (dBm) 0 –2 HIGH SIDE LO IIP3 –20 IIP2 POUT, IM2 (dBm/TONE) 10 50 HIGH SIDE LO NF –10 IIP2 (dBm) GAIN, NF (dB) 23 LOW SIDE LO 12 60 LOW SIDE LO LO LEAKAGE (dBm) 18 LO-RF Leakage vs RF Output Frequency –90 –16 TA = 85°C –12 –4 0 –8 IF INPUT POWER (dBm/TONE) 4 5519 G11 5519f 4 LT5519 U W TYPICAL PERFOR A CE CHARACTERISTICS VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1000MHz, unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.) IF, LO and RF Port Return Loss vs Frequency Conversion Gain vs IF Input Power (One Input Tone) 4 Conversion Gain, IIP3 and IIP2 vs Supply Voltage 0 10 –5 8 60 LOW SIDE LO 3 2 HIGH SIDE LO –1 TA = 85°C –2 –3 –10 GAIN (dB) RETURN LOSS (dB) GAIN (dB) TA = 25°C 0 –15 IF PORT –4 6 40 4 30 RF PORT LOW SIDE LO 0 –25 –5 GAIN –12 –4 0 –8 IF INPUT POWER (dBm) –2 –30 4 0 500 1000 1500 FREQUENCY (MHz) 5519 G12 2000 5519 G13 IIP3 HIGH SIDE LO 2 LO PORT –20 IIP2 4 4.25 20 IIP3, IIP2 (dBm) 1 –6 –16 50 TA = –40°C 10 LOW SIDE AND HIGH SIDE LO 4.5 4.75 5 SUPPLY VOLTAGE (V) 5.25 0 5.5 5519 G14 U U U PI FU CTIO S GND (Pins 1, 4, 9, 12, 13, 16): Internal Grounds. These pins are used to improve isolation and are not intended as DC or RF grounds for the IC. Connect these pins to low impedance grounds on the PCB for best performance. IF+, IF – (Pins 2, 3): Differential IF Signal Inputs. A differential signal must be applied to these pins through DC blocking capacitors. The pins must be connected to ground with 100Ω resistors (the grounds must each be capable of sinking about 18mA). For best LO leakage performance, these pins should be DC isolated from each other. An impedance transformation is required to match the IF input to the desired source impedance (typically 50Ω or 75Ω). EN (Pin 5): Enable Pin. When the applied voltage is greater than 3V, the IC is enabled. When the applied voltage is less than 0.5V, the IC is disabled and the DC current drops to about 1µA. in Figure␣ 2. The 1000pF capacitor should be located as close to the pins as possible. VCC3 (Pin 8): Power Supply Pin for the Internal Mixer. Typical current consumption is about 36mA. This pin should be externally connected to VCC through an inductor. A 39nH inductor is shown in Figure 2, though the value is not critical. RF –, RF+ (Pins 10, 11): Differential RF Outputs. One pin may be DC connected to a low impedance ground to realize a 50Ω single-ended output. No external matching components are required. A DC voltage should not be applied across these pins, as they are internally connected through a transformer winding. VCC1 (Pin 6): Power Supply Pin for the Bias Circuits. Typical current consumption is about 2mA. This pin should be externally connected to VCC and have appropriate RF bypass capacitors. LO+, LO – (Pins 14, 15): Differential Local Oscillator Inputs. The LT5519 works well with a single-ended source driving the LO+ pin and the LO– pin connected to a low impedance ground. No external 50Ω matching components are required. An internal resistor is connected across these pins; therefore, a DC voltage should not be applied across the inputs. VCC2 (Pin 7): Power Supply Pin for the LO Buffer Circuits. Typical current consumption is about 22mA. This pin should have appropriate RF bypass capacitors as shown Exposed Pad (Pin 17): DC and RF ground return for the entire IC. This must be soldered to the printed circuit board low impedance ground plane. 5519f 5 LT5519 W BLOCK DIAGRA EXPOSED GND PAD 17 12 RF + 11 RF – 10 GND 9 GND 13 5pF 8 VCC3 HIGH SPEED LO BUFFER LO+ 14 10pF DOUBLEBALANCED MIXER 85Ω LO – 15 6 VCC1 5pF BIAS GND 16 5 EN 7 1 2 3 4 VCC2 GND IF + IF – GND 5519 BD TEST CIRCUIT LOIN 1140MHz 1 IFIN 140MHz 1 R1 C1 T1 2 5 2 C2 3 16 GND GND IF + RF + ER = 4.4 RF GND 0.062" 0.018" DC GND 11 RFOUT 1000MHz 4 IF – RF – GND EN GND 5 0.018" 12 LT5519 3 R2 14 13 LO+ GND GND C3 4 15 LO – VCC1 VCC2 6 7 VCC3 10 9 17 8 L1 EN VCC 5519 F02 C5 C4 REF DES VALUE SIZE PART NUMBER C1, C2 220pF 0402 AVX 04023C221KAT2A C3 33pF 0402 AVX 04023A330KAT2A C4 1000pF 0402 AVX 04023A102KAT2A C5 1µF 0603 Taiyo Yuden LMK107BJ105MA L1 R1, R2 T1 39nH 0402 Toko LL1005-FH39NJ 100Ω, 0.1% 0603 IRC PFC-W0603R-03-10R1-B 4:1 SM-22 M/A-COM ETC4-1-2 Figure 2. Test Schematic for the LT5519 5519f 6 LT5519 U U W U APPLICATIO S I FOR ATIO The LT5519 consists of a double-balanced mixer, a high performance LO buffer and bias/enable circuits. The RF and LO ports may be driven differentially; however, they are intended to be used in single-ended mode by connecting one input of each pair to ground. The IF input ports must be DC-isolated from the source and driven differentially. The IF input should be impedance-matched for the desired input frequency. The LO input has an internal broadband 50Ω match with return loss better than 10dB at frequencies up to 1800MHz. The RF output band ranges from 700MHz to 1400MHz, with an internal RF transformer providing a 50Ω impedance match across the band. Low side or high side LO injection can be used. IF Input Port The IF inputs are connected to the emitters of the doublebalanced mixer transistors, as shown in Figure 3. These pins are internally biased and an external resistor must be connected from each IF pin to ground to set the current through the mixer core. The circuit has been optimized to work with 100Ω resistors, which will result in approximately 18mA of DC current per side. For best LO leakage performance, the resistors should be well matched; thus resistors with 0.1% tolerance are recommended. If LO leakage is not a concern, then lesser tolerance resistors can be used. The symmetry of the layout is also important for achieving optimum LO isolation. The capacitors shown in Figure 3, C1 and C2, serve two purposes. They provide DC isolation between the IF+ and IF – ports, thus preventing DC interactions that could cause unpredictable variations in LO leakage. They also 100Ω 0.1% C1 IFIN 50Ω T1 4:1 LT5519 18mA 2 IF+ C3 VCC C2 3 100Ω 0.1% IF – 18mA 5519 F03 Figure 3. IF Input with External Matching improve the impedance match by canceling excess inductance in the package and transformer. The input capacitor value required to realize an impedance match at desired frequency, f, can be estimated as follows: C1 = C2 = 1 (2πf)2 (LIN + LEXT ) where; f is in units of Hz, LIN and LEXT are in Henry, and C1, C2 are in Farad. LIN is the differential input inductance of the LT5519, and is approximately 1.67nH. LEXT represents the combined inductances of differential external components and transmission lines. For the evaluation board shown in Figure 10, LEXT = 4.21nH. Thus, for f = 140MHz, the above formula gives C1 = C2 = 220pF. Table 1 lists the differential IF input impedance and reflection coefficient for several frequencies. A 4:1 balun can be used to transform the impedance up to about 50Ω. Table 1. IF Input Differential Impedance FREQUENCY (MHz) DIFFERENTIAL INPUT IMPEDANCE DIFFERENTIAL S11 MAG ANGLE 10 10.1 + j0.117 0.663 180 44 10.1 + j0.476 0.663 179 70 10.1 + j0.751 0.663 178 140 10.2 + j1.47 0.663 177 170 10.2 + j1.78 0.663 176 240 10.2 + j2.53 0.663 174 360 10.2 + j3.81 0.663 171 500 10.2 + j5.31 0.663 167 LO Input Port The simplified circuit for the LO buffer input is shown in Figure 4. The LO buffer amplifier consists of high speed limiting differential amplifiers, optimized to drive the mixer quad for high linearity. The LO + and LO – ports can be driven differentially; however, they are intended to be driven by a single-ended source. An internal resistor connected across the LO + and LO – inputs provides a broadband 50Ω impedance match. Because of the resistive match, a DC voltage at the LO input is not recommended. If the LO signal source output is not AC coupled, then a DC blocking capacitor should be used at the LO input. 5519f 7 LT5519 U W U U APPLICATIO S I FOR ATIO LOIN 50Ω LT5519 LO+ 14 RF+ LT5519 5pF 11 220Ω VCC 15 VCC 85Ω LO – 5pF 220Ω RF– 10 10pF 8 VCC3 5519 F04 Figure 4. LO Input Circuit RFOUT 50Ω 5519 F05 Figure 5. RF Output Circuit Though the LO input is internally matched to 50Ω, there may be some cases, particularly at higher frequencies or with different source impedances, where a further optimized match is desired. Table 2 includes the single-ended input impedance and reflection coefficient vs frequency for the LO input for use in such cases. Table 2. Single-Ended LO Input Impedance RF + and RF – pins are connected together through the secondary windings of the transformer; thus a DC voltage should not be applied across these pins. The impedance data for the RF output, listed in Table 3, can be used to develop matching networks for different load impedances. Table 3. Single-Ended RF Output Impedance FREQUENCY (MHz) INPUT IMPEDANCE S11 MAG ANGLE 200 72.3 – j16.1 0.223 –28.4 400 63.3 – j11.3 0.153 –34.7 600 61.6 – j7.5 0.124 – 29.2 800 61.9 – j6.0 0.119 – 23.6 1000 62.7 – j6.1 0.125 –22.7 1200 63.2 – j7.4 0.134 –25.5 1400 63.3 – j9.5 0.144 –30.8 1600 62.8 – j12.0 0.155 –37.1 1800 61.6 – j14.2 0.163 –43.4 RF Output Port An internal RF transformer, shown in Figure 5, reduces the mixer-core impedance to provide an impedance of 50Ω across the RF + and RF – pins. The LT5519 is designed and tested with the outputs configured for single-ended operation, as shown in the Figure 5; however, the outputs can be used differentially as well. A center tap in the transformer provides the DC connection to the mixer core and the transformer provides DC isolation at the RF output. The FREQUENCY (MHz) OUTPUT IMPEDANCE S11 700 27.6 + j32.0 0.465 103 800 39.7 + j32.1 0.354 88.1 900 50.9 + j23.5 0.227 74.7 1000 53.5 + j10.3 0.105 65.5 1100 48.3 + j1.3 0.022 143 1200 42.0 – j3.1 0.093 –157 1300 36.6 – j3.4 0.159 –164 1400 33.0 – j2.0 0.207 –172 MAG ANGLE Operation at Different Input Frequencies On the evaluation board shown in Figure 10, the input of the LT5519 can be easily matched for different frequencies by changing the capacitors, C1, C2 and C3. Capacitors C1 and C2 set the input matching frequency while C3 improves the LO to RF leakage performance. Decreasing the value of C3 at higher input frequencies reduces its impact on conversion gain. Table 4 lists some actual values used at selected frequencies. 5519f 8 LT5519 U U W U APPLICATIO S I FOR ATIO Table 4. Input Capacitor Values vs Frequency FREQUENCY (MHz) CAPACITANCE (C1, C2) (pF) CAPACITANCE (C3) (pF) 44 2200 33 70 820 33 140 220 33 240 68 15 300 39 6.8 350 27 6.8 440 18 6.8 The performance was evaluated with the input tuned for each of these frequencies and the results are summarized in Figures 6-8. The same IF input balun transformer was used for all measurements. In each case, the LO input 6 Without any external components on the RF output, the internal transformer of the LT5519 provides a good 50Ω impedance match for RF frequencies above approximately 850MHz. Below this frequency, the return loss drops below 10dB and degrades the conversion gain. The addition of a single 10pF capacitor in series with the RF output improves the match at lower RF frequencies, shifting the 10dB return loss point to about 700MHz, as demonstrated in Figure 9. This change also results in an improvement of the conversion gain. 0 INPUT TUNED FOR EACH TEST FREQUENCY VCC = 5V –10 PLO = –5dBm TA = 25°C 18 SSB NF 16 HIGH SIDE LO 14 3 12 10 1 GAIN 0 8 LOW SIDE –1 –2 0 6 HIGH SIDE LO VCC = 5V PLO = –5dBm TA = 25°C –3 NF (dB) LOW SIDE 2 LEAKAGE (dBm) 4 GAIN (dB) Low Frequency Matching of the RF Output Port 20 INPUT TUNED FOR EACH TEST FREQUENCY 5 –4 frequency was adjusted to maintain an RF output frequency of 1000MHz. 4 –20 –30 HIGH SIDE LO –40 LOW SIDE LO –50 2 –60 0 500 100 300 400 200 INPUT FREQUENCY (MHz) 1 100 200 300 400 INPUT FREQUENCY (MHz) 5519 F08 5519 F06 Figure 6. Conversion Gain and Single Sideband Noise Figure vs Tuned IF Input Frequency 27 INPUT TUNED FOR EACH TEST FREQUENCY 25 LOW SIDE Figure 8. LO to RF Leakage vs Tuned IF Input Frequency 70 0 60 –1 0 NO COUT COUT = 10pF IIP2 –5 GAIN –2 –10 –3 –15 –4 –20 30 19 HIGH SIDE LO IIP3 17 20 GAIN (dB) 40 21 IIP2 (dBm) IIP3 (dBm) HIGH SIDE 15 COUT = 10pF 10 VCC = 5V, TA = 25°C PLO = –5dBm 13 0 100 200 –25 –5 LOW SIDE RETURN LOSS –6 RETURN LOSS (dB) 50 23 500 –30 NO COUT 300 400 INPUT FREQUENCY (MHz) 0 500 5519 F07 Figure 7. IIP3 and IIP2 vs Tuned IF Input Frequency –35 –7 700 800 900 1000 1100 1200 1300 1400 RF OUTPUT FREQUENCY (MHz) 5519 F09 Figure 9. Conversion Gain and Return Loss vs Output Frequency 5519f 9 LT5519 U TYPICAL APPLICATIO S (10a) Top Layer Silkscreen (10b) Top Layer Metal Figure 10. Evaluation Board Layout 5519f 10 LT5519 U PACKAGE DESCRIPTIO UF Package 16-Lead Plastic QFN (4mm × 4mm) (Reference LTC DWG # 05-08-1692) 0.72 ±0.05 4.35 ± 0.05 2.15 ± 0.05 2.90 ± 0.05 (4 SIDES) PACKAGE OUTLINE 0.30 ±0.05 0.65 BSC RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW—EXPOSED PAD 4.00 ± 0.10 (4 SIDES) 0.75 ± 0.05 R = 0.115 TYP 0.55 ± 0.20 15 16 PIN 1 TOP MARK 1 2.15 ± 0.10 (4-SIDES) 2 (UF) QFN 0503 0.200 REF 0.00 – 0.05 0.30 ± 0.05 0.65 BSC NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. ALL DIMENSIONS ARE IN MILLIMETERS 3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 4. EXPOSED PAD SHALL BE SOLDER PLATED 5519f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT5519 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT5511 High Signal Level Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 DC-3GHz High Signal Level Downconverting Mixer RF Input to 3GHz, 21dBm IIP3, Integrated LO Buffer LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator LT5517 40MHz to 900MHz Direct Conversion Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3, Single Ended, 50Ω Matched RF and LO Ports LT5522 600MHz to 2.7GHz High Signal Level Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF and LO Ports Infrastructure RF Power Detectors LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.25V Supply LTC5505 300MHz to 3GHz RF Power Detectors LTC5505-1: –28dBm to +18dBm Range, LTC5505-2: –32dBm to +12dBm Range,Temperature Compensated, 2.7V to 6V Supply LTC5507 100kHz to 1000MHz RF Power Detector –34dBm to +14dBm Range, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector –32dBm to +12dBm Range, Temperature Compensated, SC70 Package LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Temperature Compensated, SC70 Package LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset RF Building Blocks LT5500 1.8GHz to 2.7GHz Receiver Front End 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer LO Buffer LT5502 400MHz Quadrature IF Demodulator with RSSI 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range LT5503 1.2GHz to 2.7GHz Direct IQ Modulator and Upconverting Mixer 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth LT5506 500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain, 8.8MHz Baseband Bandwidth LT5546 500MHz Ouadrature IF Demodulator with VGA and 17MHz Baseband Bandwidth 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –7dB to 56dB Linear Power Gain 5519f 12 Linear Technology Corporation LT/TP 0104 1K • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com  LINEAR TECHNOLOGY CORPORATION 2004