LTC4440-5
High Speed, High Voltage,
High Side Gate Driver
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FEATURES
DESCRIPTIO
■
The LTC®4440-5 is a high frequency high side N-channel
MOSFET gate driver that is designed to operate in applications with VIN voltages up to 60V. The LTC4440-5 can also
withstand and continue to function during 80V VIN transients. The powerful driver capability reduces switching
losses in MOSFETs with high gate capacitances. The
LTC4440-5’s pull-up has a peak output current of 1.1A and
its pull-down has an output impedance of 1.85Ω.
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■
■
■
■
■
■
■
Wide Operating VIN Range: Up to 60V
Rugged Architecture Tolerant of 80V VIN Transients
Powerful 1.85Ω Driver Pull-Down (with 6V Supply)
Powerful 1.1A Peak Current Driver Pull-Up
(with 6V Supply)
7ns Fall Time Driving 1000pF Load
10ns Rise Time Driving 1000pF Load
Drives Standard Threshold MOSFETs
TTL/CMOS Compatible Inputs with Hysteresis
Input Thresholds are Independent of Supply
Undervoltage Lockout
Low Profile (1mm) SOT-23 (ThinSOTTM) and
Thermally Enhanced 8-Pin MSOP Packages
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APPLICATIO S
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The LTC4440-5 features supply independent TTL/CMOS
compatible input thresholds with 350mV of hysteresis.
The input logic signal is internally level-shifted to the
bootstrapped supply, which may function at up to 95V
above ground.
The LTC4440-5 is optimized for driving (5V) logic level
FETs and contains an undervoltage lockout circuit that
disables the external MOSFET when activated.
Telecommunications Power Systems
Distributed Power Architectures
Server Power Supplies
High Density Power Modules
General Purpose Low-Side Driver
The LTC4440-5 is available in the low profile (1mm)
SOT-23 or a thermally enhanced 8-lead MSOP package.
PARAMETER
, LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a
trademark of Linear Technology Corporation. All other trademarks are the property of their
respective owners. Protected by U.S. Patents including 6677210.
LTC4440-5
LTC4440
60V
80V
Max Operating TS
Absolute Max TS
80V
100V
4V to 15V
8V to 15V
VCC UV+
3.2V
6.3V
UV–
3.04V
6.0V
MOSFET Gate Drive
VCC
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TYPICAL APPLICATIO
Synchronous Phase-Modulated Full-Bridge Converter
LTC4440-5 Driving a 1000pF Capacitive Load
VIN
36V TO 60V
VCC
4V TO 15V
LTC4440-5
TG-TS
2V/DIV
VCC BOOST
INP
TG
GND
TS
INP
2V/DIV
LTC4440-5
LTC3722-1
VCC BOOST
INP
TG
GND
TS
•
•
50ns/DIV
4440 TA01
4440-5 TA02
VCC = BOOST-TS = 5V
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LTC4440-5
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ABSOLUTE MAXIMUM RATINGS
(Note 1)
Supply Voltage
VCC ....................................................... – 0.3V to 15V
BOOST – TS ......................................... – 0.3V to 15V
INP Voltage ............................................... – 0.3V to 15V
BOOST Voltage (Continuous) ................... – 0.3V to 85V
BOOST Voltage (100ms) .......................... – 0.3V to 95V
TS Voltage (Continuous) ............................. – 5V to 70V
TS Voltage (100ms) ..................................... – 5V to 80V
Peak Output Current < 1µs (TG) ............................... 4A
Operating Ambient Temperature Range
(Note 2) .............................................. – 40°C to 85°C
Junction Temperature (Note 3) ............................ 125°C
Storage Temperature Range ................. – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
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PACKAGE/ORDER INFORMATION
TOP VIEW
INP
GND
VCC
GND
1
2
3
4
TOP VIEW
8
7
6
5
9
TS
TG
BOOST
NC
MS8E PACKAGE
8-LEAD PLASTIC MSOP
MS8E PART MARKING
LTBRG
5 TG
INP 3
4 TS
S6 PACKAGE
6-LEAD PLASTIC SOT-23
TJMAX = 125°C, θJA = 230°C/W
TJMAX = 125°C, θJA = 40°C/W (NOTE 4)
EXPOSED PAD IS GND (PIN 9), MUST BE SOLDERED TO PCB
ORDER PART NUMBER
LTC4440EMS8E-5
6 BOOST
VCC 1
GND 2
S6 PART MARKING
ORDER PART NUMBER
LTC4440ES6-5
LTBRF
Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = VBOOST = 6V, VTS = GND = 0V, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
200
18
325
40
µA
µA
3.20
3.04
160
3.65
3.50
V
V
mV
Main Supply (VCC)
IVCC
UVLO
DC Supply Current
Normal Operation
UVLO
Undervoltage Lockout Threshold
INP = 0V
VCC < UVLO Threshold (Falling) – 0.1V
VCC Rising
VCC Falling
Hysteresis
●
●
2.75
2.60
Bootstrapped Supply (BOOST – TS)
IBOOST
DC Supply Current
Normal Operation
INP = 0V
INP = 6V
0
310
450
µA
µA
Input Signal (INP)
VIH
High Input Threshold
INP Ramping High
●
1.2
1.6
2
V
VIL
Low Input Threshold
INP Ramping Low
●
0.8
1.25
1.6
V
VIH – VIL
Input Voltage Hysteresis
0.350
IINP
Input Pin Bias Current
±0.01
±2
µA
V
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LTC4440-5
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = VBOOST = 6V, VTS = GND = 0V, unless otherwise noted.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
275
mV
2.75
Ω
Output Gate Driver (TG)
VOH
High Output Voltage
ITG = –10mA, VOH = VBOOST – VTG
VOL
Low Output Voltage
ITG = 100mA
0.7
IPU
Peak Pull-Up Current
●
RDS
Output Pull-Down Resistance
●
●
185
0.75
V
1.1
1.85
A
Switching Timing
tr
Output Rise Time
10% – 90%, CL = 1nF
10% – 90%, CL = 10nF
10
100
ns
ns
tf
Output Fall Time
10% – 90%, CL = 1nF
10% – 90%, CL = 10nF
7
70
ns
ns
tPLH
Output Low-High Propagation Delay
●
35
65
ns
tPHL
Output High-Low Propagation Delay
●
33
65
ns
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: The LTC4440-5 is guaranteed to meet performance specifications
from 0°C to 85°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: TJ is calculated from the ambient temperature TA and power
dissipation PD according to the following formula:
TJ = TA + (PD • θJA°C/W)
Note 4: Failure to solder the exposed back side of the MS8E package to
the PC board will result in a thermal resistance much higher than 40°C/W.
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TYPICAL PERFOR A CE CHARACTERISTICS
BOOST-TS Supply Quiescent
Current vs Voltage
400
300
350
250
INP = GND
200
INP = VCC
150
100
50
Output Low Voltage (VOL)
vs Supply Voltage
300
INP = VCC
OUTPUT (TG-TS) VOLTAGE (mV)
350
QUIESCENT CURRENT (µA)
QUIESCENT CURRENT (µA)
VCC Supply Quiescent Current
vs Voltage
300
250
200
150
100
50
0
0
10
5
VCC SUPPLY VOLTAGE (V)
15
0
200
150
100
50
0
0
5
10
15
BOOST-TS SUPPLY VOLTAGE (V)
4440-5 G01
250
4440-5 G02
3
4
5 6 7 8 9 10 11 12 13 14 15
BOOST-TS SUPPLY VOLTAGE (V)
4440-5 G03
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LTC4440-5
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TYPICAL PERFOR A CE CHARACTERISTICS
Input (INP) Thresholds
vs Supply Voltage
16
2.0
14
1.8
12
ITG = 1mA
10
ITG = 10mA
ITG = 100mA
8
6
4
INPUT
(INP)
5V/DIV
VIH
1.4
VIL
1.2
1.0
OUTPUT
(TG)
5V/DIV
0.8
0.6
0.4
2
4
5
0
6 7 8 9 10 11 12 13 14 15
BOOST-TS SUPPLY VOLTAGE (V)
4
5
6
7 8 9 10 11 12 13 14 15
VCC SUPPLY VOLTAGE (V)
4440-5 G04
4440-5 G05
VCC Supply Current
vs Temperature
BOOST-TS Quiescent Current
vs Temperature
VCC Undervoltage Lockout
Thresholds vs Temperature
3.5
250
UVLO THRESHOLD VOLTAGE (V)
INP = GND
INP = VCC
150
400
3.4
200
100
50
350
3.3
RISING
3.2
3.1
FALLING
3.0
2.9
2.8
2.7
2.5
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
150
100
1.4
VIL
1.2
1.0
Peak Driver (TG) Pull-Up Current
vs Temperature
380
3.5
370
3.0
BOOST-TS = 15V
360
PEAK CURRENT (A)
HYSTERESIS (VIH-VIL) (mV)
1.8
VIH
350
340
330
320
4440-5 G11
300
–55 –35 –15
2.5
BOOST-TS = 12V
2.0
1.5
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G12
BOOST-TS = 6V
1.0
0.5
310
5 25 45 65 85 105 125
TEMPERATURE (°C)
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G10
Input Threshold Hysteresis
vs Temperature
2.0
INPUT THRESHOLD (V)
200
4440-5 G09
Input (INP) Threshold
vs Temperature
0.8
–55 –35 –15
250
0
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G08
1.6
300
50
2.6
0
–55 –35 –15
4440-5 G07
250ns/DIV
VCC = BOOST-TS = 12V
0.2
QUIESCENT CURRENT (µA)
0
QUIESCENT CURRENT (µA)
2MHz Operation
1.6
INPUT THRESHOLD (V)
HIGH OUTPUT VOLTAGE (V)
Output High Voltage (VOH)
vs Supply Voltage
0
–55 –35 –15
BOOST-TS = 4V
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G13
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LTC4440-5
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TYPICAL PERFOR A CE CHARACTERISTICS
Output Driver Pull-Down
Resistance vs Temperature
Propagation Delay vs Temperature
50
3.0
45
BOOST-TS = 4V
BOOST-TS = 6V
2.0
1.5
BOOST-TS = 15V
BOOST-TS = 12V
1.0
0.5
PROPAGATION DELAY (ns)
2.5
RDS (Ω)
VCC = BOOST = 6V
40
tPLH
35
tPHL
30
25
0
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
20
–55 –35 –15
5 25 45 65 85 105 125
TEMPERATURE (°C)
4440-5 G14
4440-5 G15
Driving a 3300pF Capacitive Load
Driving a 3300pF Capacitive Load
TG-TS
2V/DIV
TG-TS
5V/DIV
INP
2V/DIV
INP
2V/DIV
50ns/DIV
VCC = BOOST-TS = 5V
4440-5 G16
50ns/DIV
VCC = BOOST-TS = 12V
4440-5 G17
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PI FU CTIO S
SOT-23 Package
VCC (Pin 1): Chip Supply. This pin powers the internal low
side circuitry. A low ESR ceramic bypass capacitor should
be tied between this pin and the GND pin (Pin 2).
GND (Pin 2): Chip Ground.
INP (Pin 3): Input Signal. TTL/CMOS compatible input
referenced to GND (Pin 2).
TS (Pin 4): Top (High Side) source connection or GND if
used in ground referenced applications.
TG (Pin 5): High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
BOOST (Pin 6): High Side Bootstrapped Supply. An external capacitor should be tied between this pin and TS
(Pin 4). Normally, a bootstrap diode is connected between
VCC (Pin 1) and this pin. Voltage swing at this pin is from
VCC – VD to VIN + VCC – VD, where VD is the forward voltage
drop of the bootstrap diode.
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LTC4440-5
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PI FU CTIO S
Exposed Pad MS8E Package
INP (Pin 1): Input Signal. TTL/CMOS compatible input
referenced to GND (Pin 2).
GND (Pins 2, 4): Chip Ground.
VCC (Pin 3): Chip Supply. This pin powers the internal low
side circuitry. A low ESR ceramic bypass capacitor should
be tied between this pin and the GND pin (Pin 2).
NC (Pin 5): No Connect. No connection required. For
convenience, this pin may be tied to Pin 6 (BOOST) on the
application board.
BOOST (Pin 6): High Side Bootstrapped Supply. An external capacitor should be tied between this pin and TS
(Pin 8). Normally, a bootstrap diode is connected between
VCC (Pin 3) and this pin. Voltage swing at this pin is from
VCC – VD to VIN + VCC – VD, where VD is the forward voltage
drop of the bootstrap diode.
TG (Pin 7): High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
TS (Pin 8): Top (High Side) source connection or GND if
used in ground referenced applications.
Exposed Pad (Pin 9): Ground. Must be electrically connected to Pins 2 and 4 and soldered to PCB ground for
optimum thermal performance.
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BLOCK DIAGRA
VIN
UP TO 60V,
TRANSIENT
UP TO 80V
BOOST
VCC UNDERVOLTAGE
LOCKOUT
TG
GND
TS
4V TO 15V
BOOST
INP
LEVEL SHIFTER
44405 BD
TS
GND
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TI I G DIAGRA
INPUT RISE/FALL TIME < 10ns
INPUT (INP)
VIH
VIL
90%
10%
OUTPUT (TG)
tr
tPLH
tf
tPHL
4440 TD
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LTC4440-5
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APPLICATIO S I FOR ATIO
The LTC4440-5 receives a ground-referenced, low voltage
digital input signal to drive a high side N-channel power
MOSFET whose drain can float up to 80V above ground,
eliminating the need for a transformer between the low
voltage control signal and the high side gate driver. The
LTC4440-5 normally operates in applications with input
supply voltages (VIN) up to 60V, but is able to withstand
and continue to function during 80V, 100ms transients on
the input supply.
The powerful output driver of the LTC4440-5 reduces the
switching losses of the power MOSFET, which increase
with transition time. The LTC4440-5 is capable of driving
a 1nF load with 10ns rise and 7ns fall times using a
bootstrapped supply voltage VBOOST–TS of 6V.
Input Stage
The LTC4440-5 employs TTL/CMOS compatible input logic
level or thresholds that allow a low voltage digital signal to
drive standard threshold power MOSFETs. The LTC44405 contains an internal voltage regulator that biases the input
buffer, allowing the input thresholds (VIH = 1.6V, VIL =
1.25V) to be relatively independent of variations in VCC. The
350mV hysteresis between VIH and VIL eliminates false
triggering due to noise during switching transitions. However, care should be taken to keep this pin from any noise
pickup, especially in high frequency, high voltage applications. The LTC4440-5 input buffer has a high input impedance and draws negligible input current, simplifying the
drive circuitry required for the input.
VIN
UP TO 100V
BOOST
Overview
LTC4440-5
CGD
Q1
TG
POWER
MOSFET
N1
CGS
LOAD
INDUCTOR
4440 F01
TS
V–
Figure 1. Capacitance Seen by TG During Switching
discharge the power MOSFET’s gate capacitance during
high-to-low signal transitions. When the power MOSFET’s
gate is pulled low (gate shorted to source through N1) by
the LTC4440-5, its source (TS) is pulled low by its load
(e.g., an inductor or resistor). The slew rate of the source/
gate voltage causes current to flow back to the MOSFET’s
gate through the gate-to-drain capacitance (CGD). If the
MOSFET driver does not have sufficient sink current
capability (low output impedance), the current through
the power MOSFET’s CGD can momentarily pull the gate
high, turning the MOSFET back on.
A similar scenario exists when the LTC4440-5 is used to
drive a low side MOSFET. When the low side power
MOSFET’s gate is pulled low by the LTC4440-5, its drain
voltage is pulled high by its load (e.g., inductor or resistor). The slew rate of the drain voltage causes current to
flow back to the MOSFET’s gate through its gate-to-drain
capacitance. If the MOSFET driver does not have sufficient
sink current capability (low output impedance), the current through the power MOSFET’s CGD can momentarily
pull the gate high, turning the MOSFET back on.
Output Stage
A simplified version of the LTC4440-5’s output stage is
shown in Figure 1 . The pull-down device is an N-channel
MOSFET (N1) and the pull-up device is an NPN bipolar
junction transistor (Q1). The output swings from the lower
rail (TS) to within an NPN VBE (~ 0.7V) of the positive rail
(BOOST). This large voltage swing is important in driving
external power MOSFETs, whose RDS(ON) is inversely
proportional to its gate overdrive voltage (VGS – VTH).
The LTC4440-5’s peak pull-up (Q1) current is 1.1A while
the pull-down (N1) resistance is 1.85Ω, with a BOOST-TS
supply of 6V. The low impedance of N1 is required to
Rise/Fall Time
Since the power MOSFET generally accounts for the
majority of the power loss in a converter, it is important to
quickly turn it on or off, thereby minimizing the transition
time in its linear region. The LTC4440-5 can drive a 1nF
load with a 10ns rise time and 7ns fall time.
The LTC4440-5’s rise and fall times are determined by the
peak current capabilities of Q1 and N1. The predriver that
drives Q1 and N1 uses a nonoverlapping transition scheme
to minimize cross-conduction currents. N1 is fully turned
off before Q1 is turned on and vice versa.
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LTC4440-5
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APPLICATIO S I FOR ATIO
Power Dissipation
To ensure proper operation and long-term reliability, the
LTC4440-5 must not operate beyond its maximum temperature rating. Package junction temperature can be
calculated by:
TJ = TA + PD (θJA)
where:
TJ = Junction Temperature
TA = Ambient Temperature
PD = Power Dissipation
θJA = Junction-to-Ambient Thermal Resistance
Power dissipation consists of standby and switching
power losses:
PD = PSTDBY + PAC
where:
PSTDBY = Standby Power Losses
PAC = AC Switching Losses
The LTC4440-5 consumes very little current during
standby. The DC power loss at VCC = 6V and VBOOST–TS =
6V is only (250µA)(5V) = 1.2mW with INP = 0V.
AC switching losses are made up of the output capacitive
load losses and the transition state losses. The capacitive
load losses are primarily due to the large AC currents
needed to charge and discharge the load capacitance
during switching. Load losses for the output driver driving
a pure capacitive load COUT would be:
Load Capacitive Power = (COUT)(f)(VBOOST–TS)2
The power MOSFET’s gate capacitance seen by the driver
output varies with its VGS voltage level during switching.
A power MOSFET’s capacitive load power dissipation can
be calculated using its gate charge, QG. The QG value
corresponding to the MOSFET’s VGS value (VCC in this
case) can be readily obtained from the manufacturer’s QG
vs VGS curves:
Load Capacitive Power (MOS) = (VBOOST–TS)(QG)(f)
nodal capacitances and cross-conduction currents in the
internal gates.
Undervoltage Lockout (UVLO)
The LTC4440-5 contains an undervoltage lockout detector
that monitors VCC. When VCC falls below 3.04V, the
internal buffer is disabled and the output pin TG is pulled
down to TS.
Bypassing and Grounding
The LTC4440-5 requires proper bypassing on the VCC and
VBOOST–TS supplies due to its high speed switching (nanoseconds) and large AC currents (Amperes). Careless
component placement and PCB trace routing may cause
excessive ringing and under/overshoot.
To obtain the optimum performance from the LTC4440-5:
A. Mount the bypass capacitors as close as possible
between the VCC and GND pins and the BOOST and TS
pins. The leads should be shortened as much as possible to reduce lead inductance.
B. Use a low inductance, low impedance ground plane to
reduce any ground drop and stray capacitance. Remember that the LTC4440-5 switches >2A peak currents and
any significant ground drop will degrade signal integrity.
C. Plan the power/ground routing carefully. Know where
the large load switching current is coming from and
going to. Maintain separate ground return paths for the
input pin and the output power stage.
D. Keep the copper trace between the driver output pin and
the load short and wide.
E. When using the MS8E package, be sure to solder the
exposed pad on the back side of the LTC4440-5 package to the board. Correctly soldered to a 2500mm2
double-sided 1oz copper board, the LTC4440-5 has a
thermal resistance of approximately 40°C/W. Failure to
make good thermal contact between the exposed back
side and the copper board will result in thermal resistances far greater than 40°C/W.
Transition state power losses are due to both AC currents
required to charge and discharge the driver’s internal
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1
VIN
1µF
220pF
150Ω
20k
1/4W
12V
10
4
2
UVLO
VREF
0.47µF
11
Q3
Q1
12V
ADLY PDLY
B
8 0.22µF
220pF
8
180pF
5.1k
1
DPRG NC SYNC
220pF
14
2
5VREF 150k
12
VIN
SBUS
4.99k
20k
18
9
1
21
20
2
C
33k
10k
13
5
6
23
D
17
10Ω
D
15
C3
68µF
20V
Q4
Q2
12V
8 0.22µF
68nF
8.25k
22
MMBT3904
CT SPRG RLEB FB GND PGND
24
19
ISNS
10Ω
4
16
+
7
D11
3
330pF
4
SS COMP
CS
5VREF
750Ω
D4
2.2nF
6
8
2
4
2
4
D8
D7
330Ω
5
C4
2.2nF
250V
8
MOC207
5
9
100k
2
1
6
CSE+
VH
5
D12
5.1V
1
11
CSF–
12
8
3
4
2.7k
470Ω
1/4W
6
5
GND-F GND-S
14 15
VOUT
16
PVCC
22nF
10k
330pF
7
TIMER
–VOUT
2.49k
9.53k
13
4440 TA03
8
10
+
MF MF2 VCC
909Ω
D1
820pF
200V
15Ω
1W
D6
Si7852DP
×4
C1, C2
180µF
16V
×2
VH
GND PGND GND2 PGND2
LTC3901EGN
V+
LT1431CS8
COLL
REF
0.047µF
2
1.10k
4.87k
1/4W
ME ME2 CSF+
3
L3
0.85µH
Si7852DP
×4
909Ω
CSE–
1.10k
4.87k
1/4W
SYNC
220pF
100Ω
1
6
7
8
10
11
7
8
10
11
T1
5(105µH):1:1
T2
5:5(105µH):1:1
D5
T3
1(1.5mH):0.5
1
4
L4
1mH
0.1µF
200k
ISNS
22Ω
D9 3.3V
100Ω
Si7852DP
×2
Si7852DP
×2
51Ω
2W
0.47µF
0.47µF 100V
100V
12V
OUTA OUTB OUTC OUTD OUTF OUTE
A
B
1.1k
0.02Ω
1.5W
LTC3722EGN-1
0.02Ω
1.5W
Si7852DP
×2
L2
150nH
Si7852DP
×2
VCC
6
INP
BOOST
LTC4440-5EMS8E
7
TG
GND GND TS
C
VCC
6
INP
BOOST
LTC4440-5EMS8E
7
TG
GND GND TS
D3
•
30.1k
A
D2
12V
3
12V
3
1µF
100V
×4
0.47µF, 100V TDK C3216X7R2A474M
1µF, 100V TDK C4532X7R2A105M
C1,C2: SANYO 16SP180M
C3: AVX TPSE686M020R0150
C4: MURATA DE2E3KH222MB3B
D1, D4-D6: MURS120T3
D2, D3, D7, D8: BAS21
D9: MMBZ5226B
D10: MMBZ5240B
D11: BAT54
D12: MMBZ231B
L1: SUMIDA CDEP105-1R3MC-50
L2: PULSE PA0651
L3: PA1294.910
L4: COILCRAFT DO1608C-105
Q1, Q2: ZETEX FMMT619
Q3, Q4: ZETEX FMMT718
T1, T2: PULSE PA0526
T3: PULSE PA0785
1µF
100V
•
182k
–VIN
36V TO 60V
51Ω
2W
•
VIN
•
•
•
•
•
•
•
VIN
•
L1
1.3µH
LTC3722/LTC4440-5 420W 36V-60VIN to 12V/35A Isolated Full-Bridge Supply
1
–VOUT
1µF
39.2k
–VOUT
1µF
VOUT
0.47µF
100V
13k
1/2W
VOUT
1µF
D10
10V
MMBT3904
100Ω
–VOUT
12V/35A
VOUT
–VOUT
VOUT
1k
LTC4440-5
TYPICAL APPLICATIO S
44405fa
9
U
VIN
93
94
95
96
97
–VIN
6
8
464k
1.5nF
30k
1/4W
4
1µF
15
5
1.5k
13 7
8
UVLO
FB GND CT
10k
270pF 33k
16
12 14
68nF
0.47µF
1
VREF
9
150k
SPRG RLEB SS DPRG
SDRB
DRVB
ISNS
DRVA
LTC3723EGN-1
R2
0.03Ω
1.5W
2
B
R1
0.03Ω
1.5W
Si7852DP
4
4
A
A
2
6
VCC
20
0.1µF
D3
B
243k
330pF
11
22nF
6
6
1
T2
1(1.5mH):0.5
1
4
D6
D5
Si7852DP
5
3
4
2
8
5
C4
2.2nF
250V
8
MOC207
665Ω
5
9
CSF+
22nF
D8
10V
11
1k
6.19k
1/4W
SYNC
220pF
100Ω
100k
2
1
866Ω
1k
1/4W
12
14 15
6
CSE+
L6
1.25µH
CSE–
5
8
3
4
1k
100Ω
1/4W
6
5
GND-F GND-S
8
10
VOUT
4440 TA05
–VOUT
2.49k
9.53k
13
2
+
VE
VF
3
16
C1, C2
47µF
16V
×2
22nF
10k
1
–VOUT
1µF
4.7µF
MMBT3904
D7
10V
1k
1µF, 100V TDK C3225X7R2A105M
C1,C2: SANYO 16TQC47M
C3: AVX TPSE686M020R0150
C4: MURATA GHM3045X7R222K-GC
D2: DIODES INC. ES1B
D3-D6: BAS21
D7, D8: MMBZ5240B
L4: COILCRAFT DO1608C-105
L5: COILCRAFT DO1813P-561HC
L6: PULSE PA1294.132 OR
PANASONIC ETQP1H1R0BFA
R1, R2: IRC LRC2512-R03G
T1: PULSE PA0805.004
T2: PULSE PA0785
470pF
7
TIMER
PVCC
VOUT
–VOUT
12V/20A
VOUT
42.2k 100Ω
–VOUT
1µF
VOUT
470pF
100V
10Ω
1W
ME ME2 VCC
866Ω
GND PGND GND2 PGND2
LTC3901EGN
MF MF2
V+
LT1431CS8
1
COLL
REF
0.1µF
CSF –
1k
6.19k
1/4W
VE
1µF
100V
D2
VF
VF
Si7370DP
×2
7
VE
Si7370DP
×2
11
9
T1
4T:6T(65µHMIN):6T:2T:2T
Si7852DP
0.1µF
L4
1mH
ISNS
22Ω
10
+
12V
750Ω
COMP
CS
SDRA
3
C3
68µF
20V
0.1µF
VCC
6
3
A
INP BOOST
LTC4440-5ES6
5 4.7Ω
Si7852DP
TG
GND TS
1
12V
•
66.5k
D4
•
200Ω
1/4W
12V
VIN
2
18
56VIN
48VIN
42VIN
B
1
12V
VCC
6
3
INP BOOST
LTC4440-5ES6
5 4.7Ω
TG
GND TS
1µF
100V
×3
VIN
10
16
12
14
LOAD CURRENT (A)
1µF
100V
L5
0.56µH
•
•
42V TO 56V
EFFICIENCY (%)
•
•
•
10
•
LTC3723-1 240W 42-56VIN to 12V/20A Isolated 1/4Brick (2.3" × 1.45")
LTC4440-5
TYPICAL APPLICATIO S
44405fa
U
LTC4440-5
U
PACKAGE DESCRIPTION
MS8E Package
8-Lead Plastic MSOP
(Reference LTC DWG # 05-08-1662)
5.23
(.206)
MIN
3.00 ± 0.102
(.118 ± .004)
(NOTE 3)
0.889 ± 0.127
(.035 ± .005)
2.794 ± 0.102
(.110 ± .004)
2.083 ± 0.102 3.20 – 3.45
(.082 ± .004) (.126 – .136)
0.254
(.010)
0.42 ± 0.038
(.0165 ± .0015)
TYP
0.65
(.0256)
BSC
8
7 6 5
1
2.06 ± 0.102
(.081 ± .004)
1.83 ± 0.102
(.072 ± .004)
3.00 ± 0.102
(.118 ± .004)
(NOTE 4)
4.90 ± 0.152
(.193 ± .006)
DETAIL “A”
0.52
(.0205)
REF
0° – 6° TYP
GAUGE
PLANE
1
0.53 ± 0.152
(.021 ± .006)
RECOMMENDED SOLDER PAD LAYOUT
2 3
4
1.10
(.043)
MAX
DETAIL “A”
8
BOTTOM VIEW OF
EXPOSED PAD OPTION
0.86
(.034)
REF
0.18
(.007)
SEATING
NOTE:
PLANE
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
0.22 – 0.38
(.009 – .015)
TYP
0.127 ± 0.076
(.005 ± .003)
0.65
(.0256)
BSC
MSOP (MS8E) 0603
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
0.62
MAX
0.95
REF
2.90 BSC
(NOTE 4)
1.22 REF
3.85 MAX 2.62 REF
1.4 MIN
2.80 BSC
1.50 – 1.75
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
0.01 – 0.10
1.00 MAX
DATUM ‘A’
0.30 – 0.50 REF
0.09 – 0.20
(NOTE 3)
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
1.90 BSC
S6 TSOT-23 0302 REV B
44405fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
LTC4440-5
U
TYPICAL APPLICATIO
240W 42V-56VIN to Unregulated 12V Half-Bridge Converter
L1
0.56µH
1µF
100V
D1
1µF
100V
1
A
VCC
6
INP BOOST
LTC4440-5ES6
5
TG
GND TS
3
2
1µF
100V
Si7852DP
×2
T2
70(980µH):1
4
CS+
1
3
1µF
100V
8
C3
68µF
Si7852DP
×2
12V
MMBT3904
120Ω
•
•
D3
10k
6
DRVA
DRVB
SDRB
VCC
LTC3723EGN-2
SDRA
UVLO
COMP
DPRG
VREF RAMP CT SPRG GND CS SS
12
1µF
1µF
30.1k
4.7k
1/4W
11
215k
15
VE
T1
5:4:4:2:2
62k
330pF
1
9
8
16
150pF
7
T3
1(1.5mH):0.5
1
4
2
3
22Ω
0.1µF
9
12
10k
14 15
CSF – MF MF2
6
3k
5
CSE+
LTC3901EGN
8
4
1k
0.47µF
2N7002
4.7k
D4
D5
7.5Ω
7.5Ω
3
16
PVCC
10
13
220pF
10k
2
CSE– ME ME2 VCC
TIMER
7
330pF
CS+
0.22µF B
470pF
3k
GND PGND GND2 PGND2
10 14 13
0.47µF
–VOUT
4.7k
1/4W
SYNC
100Ω
5
8
11
FB
CSF+
•
5
100pF
1
L3
1mH
A
4
C2
180µF
16V
Si7370DP
×2
VF
11V
6
VOUT
+
20Ω 1W
–VOUT
C1
2.2nF
250V
D2
•
15k
1/4W
+
VF
Si7370DP
×2
5
4 0.22µF
12V
VIN
11
1500pF
100V
1µF
7
3
B
VOUT
L2 0.22µH
•
11V
•
1µF
100V
–VIN
7
9
•
1µF
100V
48VIN
VE
2
•
•
VIN
VIN
1µF, 100V TDK C4532X7R2A105M
C1: MURATA DE2E3KH222MB3B
C2: SANYO 16SP180M
C3: AVX TPSE686M020R0150
D1-D3: BAS21
D4, D5: MMBD914
33.2k
100Ω
VOUT
MMBT3904
1
1k
1µF
1µF
–VOUT
L1: COILCRAFT DO1813P-561HC
L2: SUMIDA CDEP105-0R2NC-50
L3: COILCRAFT DO1608C-105
T1: PULSE PA0801.005
T2: PULSE P8207
T3: PULSE PA0785
10V
MMBZ5240B
4440 TA04
12V
MMBZ5242B
RELATED PARTS
PART NUMBER
LT®1161
LTC1693 Family
LT1952
LT3010/LT3010-5
LT3430
DESCRIPTION
Quad Protected High Side MOSFET Driver
High Speed Dual MOSFET Drivers
Single Switch Synchronous Forward Controller
50mA, 3V to 80V Low Dropout Micropower Regulators
High Voltage, 3A, 200kHz Step-Down Switching Regulator
LTC3705 Family
Isolated Power Supply Chipset
LTC3722-1/
LTC3722-2
LTC3723-1/
LTC3723-2
LT3781/LTC1698
Synchronous Dual Mode Phase Modulated Full-Bridge
Controllers
Synchronous Push-Pull PWM Controllers
36V to 72V Input Isolated DC/DC Converter Chip Set
LT3804
Secondary Side Dual Output Controller with Opto Driver
LTC3900
LTC3901
LTC4440
Synchronous Rectifier Driver for Forward Converters
Secondary Side Synchronous Driver for Push-Pull and
Full-Bridge Converters
High Speed, High Voltage, High Side Gate Driver
LTC4441
6A MOSFET Driver
COMMENTS
8V to 48V Supply Range, tON = 200µs, tOFF = 28µs
1.5A Peak Output Current, 4.5V ≤ VIN ≤ 13.2V
25W to 500W DC/DC Controller
Low Quiescent Current (30µA), Stable with Small (1µF) Ceramic Capacitor
Input Voltages Up to 60V, Internal 0.1Ω Power Switch, Current Mode
Architecture, 16-Pin Exposed Pad TSSOP Package
Primary and Secondary Side Controllers; Simple as Buck Circuit;
Polyphase® Operation
Adaptive Zero Voltage Switching, High Output Power Levels
(Up to Kilowatts)
Current Mode or Voltage Mode Push-Pull Controllers
Synchronous Rectification; Overcurrent, Overvoltage, UVLO Protection;
Power Good Output Signal; Voltage Margining; Compact Solution
Regulates Two Secondary Outputs, Optocoupler Feedback Divider and
Second Output Synchronous Driver Controller
Programmable Time Out, Reverse Inductor Current Sense
Programmable Time Out, Reverse Inductor Current Sense
High Side Source up to 100V, 8V to 15V Gate Drive Supply,
Undervoltage Lockout, 6-Lead ThinSOT or 8-Lead Exposed MSOP Package
Adjustable Gate Drive from 5V to 8V, 5V ≤ VIN ≤ 28V
PolyPhase is a registered trademark of Linear Technology Corporation.
44405fa
12 Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
LT 1205 REV A • PRINTED IN USA
© LINEAR TECHNOLOGY CORPORATION 2005
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