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LTC6813HLWE-1#3ZZPBF

LTC6813HLWE-1#3ZZPBF

  • 厂商:

    LINEAR(凌力尔特)

  • 封装:

    LQFP64_EP

  • 描述:

    LTC6813HLWE-1#3ZZPBF

  • 详情介绍
  • 数据手册
  • 价格&库存
LTC6813HLWE-1#3ZZPBF 数据手册
LTC6813-1 18-Cell Battery Stack Monitor with Daisy Chain Interface FEATURES DESCRIPTION Measures Up to 18 Battery Cells in Series n 2.2mV Maximum Total Measurement Error n Stackable Architecture for High Voltage Systems n Built-In isoSPI™ Interface n 1Mb Isolated Serial Communications n Uses a Single Twisted Pair, Up to 100 Meters n Low EMI Susceptibility and Emissions n Bidirectional for Broken Wire Protection n 290µs to Measure All Cells in a System n Synchronized Voltage and Current Measurement n 16-Bit Delta-Sigma ADC with Programmable Noise Filter n Engineered for ISO 26262-Compliant Systems n Passive Cell Balancing Up to 200mA (Max) with Programmable Pulse‑Width Modulation n 9 General Purpose Digital I/O or Analog Inputs n Temperature or Other Sensor Inputs n Configurable as an I2C or SPI Master n 6µA Sleep Mode Supply Current n 64-Lead eLQFP Package n AEC-Q100 Qualified for Automotive Applications The LTC®6813-1 is a multicell battery stack monitor that measures up to 18 series connected battery cells with a total measurement error of less than 2.2mV. The cell measurement range of 0V to 5V makes the LTC6813-1 suitable for most battery chemistries. All 18 cells can be measured in 290µs, and lower data acquisition rates can be selected for high noise reduction. n APPLICATIONS Electric and Hybrid Electric Vehicles Backup Battery Systems n Grid Energy Storage n High Power Portable Equipment n Multiple LTC6813-1 devices can be connected in series, permitting simultaneous cell monitoring of long, high voltage battery strings. Each LTC6813-1 has an isoSPI interface for high speed, RF immune, long distance communications. Multiple devices are connected in a daisy chain with one host processor connection for all devices. This daisy chain can be operated bidirectionally, ensuring communication integrity, even in the event of a fault along the communication path. The LTC6813-1 can be powered directly from the battery stack or from an isolated supply. The LTC6813-1 includes passive balancing for each cell, with individual PWM duty cycle control for each cell. Other features include an onboard 5V regulator, nine general purpose I/O lines and a sleep mode, where current consumption is reduced to 6µA. All registered trademarks and trademarks are the property of their respective owners. Protected by U.S. patents, including 8908779, 9182428, 9270133. n TYPICAL APPLICATION Cell 18 Measurement Error vs Temperature 2.0 CELL VOLTAGE = 3.3V 1.5 5 TYPICAL UNITS CELL 18 CELL 17 CELL 2 CELL 1 + + + • • • ISOLATED DATA WITH WIRE BREAK PROTECTION LTC6813-1 MEASUREMENT ERROR (mV) 18-Cell Monitor and Balance IC 1.0 0.5 0 –0.5 –1.0 –1.5 + 68131 TA01a –2.0 –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 68131 TA01b Rev. B Document Feedback For more information www.analog.com 1 LTC6813-1 TABLE OF CONTENTS Features...................................................... 1 Applications................................................. 1 Typical Application ......................................... 1 Description.................................................. 1 Absolute Maximum Ratings............................... 3 Order Information........................................... 3 Pin Configuration........................................... 3 Electrical Characteristics.................................. 4 Typical Performance Characteristics.................... 9 Pin Functions............................................... 15 Block Diagram.............................................. 16 Improvements from the LTC6811-1..................... 17 Operation................................................... 18 State Diagram........................................................ 18 Core LTC6813-1 State Descriptions....................... 18 isoSPI State Descriptions...................................... 19 Power Consumption.............................................. 19 ADC Operation.......................................................20 Data Acquisition System Diagnostics....................26 Watchdog and Discharge Timer.............................33 Reset Behaviors.....................................................35 S Pin Pulse-Width Modulation for Cell Balancing..36 2 Discharge Timer Monitor.......................................36 I2C/SPI Master on LTC6813-1 Using GPIOs........... 37 S Pin Pulsing Using the S Pin Control Settings..... 42 S Pin Muting..........................................................43 Serial Interface Overview.......................................43 4-Wire Serial Peripheral Interface (SPI) Physical Layer...................................................43 2-Wire Isolated Interface (isoSPI) Physical Layer.. 43 Data Link Layer......................................................54 Network Layer.......................................................54 Applications Information................................. 70 Providing DC Power............................................... 70 Internal Protection and Filtering............................ 71 Cell Balancing........................................................ 74 Discharge Control During Cell Measurements....... 75 Digital Communications........................................ 78 Enhanced Applications..........................................85 Reading External Temperature Probes................... 87 Package Description...................................... 88 Revision History........................................... 89 Typical Application........................................ 90 Related Parts............................................... 90 Rev. B For more information www.analog.com LTC6813-1 ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION (Note 1) 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 IPB IMB SCK (IPA)* CSB (IMA)* V– V–** ICMP IBIAS WDT ISOMD SDO (NC)* SDI (NC)* DTEN VREF1 VREF2 DRIVE TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 65 V– VREG GPIO9 GPIO8 GPIO7 GPIO6 GPIO5 GPIO4 GPIO3 GPIO2 GPIO1 C0 S1 C1 S2 C2 S3 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 V+ C18 S18 C17 S17 C16 S16 C15 S15 C14 S14 C13 S13 C12 S12 C11 S11 C10 S10 C9 S9 C8 S8 C7 S7 C6 S6 C5 S5 C4 S4 C3 Total Supply Voltage V+ to V–............................................................. 112.5V Supply Voltage (Relative to C12) V+ to C12................................................................50V Input Voltage (Relative to V–) C0............................................................. –0.3V to 6V C18..........................–0.3V to MIN (V+ + 5.5V, 112.5V) C(n), S(n)........................ –0.3V to MIN (8 • n, 112.5V) IPA, IMA, IPB, IMB............ –0.3V to VREG + 0.3V, ≤ 6V DRIVE....................................................... –0.3V to 7V All Other Pins............................................ –0.3V to 6V Voltage Between Inputs C(n) to C(n–1), S(n) to C(n–1)................... –0.3V to 8V C18 to C15, C15 to C12, C12 to C9, C9 to C6, C6 to C3, C3 to C0........................................... –0.3V to 21V Current In/Out of Pins All Pins Except VREG, IPA, IMA, IPB, IMB, C(n), S(n)............................................................10mA IPA, IMA, IPB, IMB..............................................30mA Specified Junction Temperature Range LTC6813I-1...........................................–40°C to 85°C LTC6813H-1........................................ –40°C to 125°C Junction Temperature............................................ 150°C Storage Temperature Range................... –65°C to 150°C Device HBM ESD Classification Level 1C Device CDM ESD Classification Level C5 LWE PACKAGE 64-LEAD (10mm × 10mm) PLASTIC eLQFP TJMAX = 150°C, θJA = 17°C/W, θJC = 2.5°C/W EXPOSED PAD (PIN 65) IS V–, MUST BE SOLDERED TO PCB *The Function of These Pins Depends on the Connection of ISOMD: ISOMD Tied to V–: CSB, SCK, SDI, SDO ISOMD Tied to VREG: IPA, IMA, NC, NC **This Pin Must Be Connected to V– ORDER INFORMATION AUTOMOTIVE PRODUCTS** TRAY (160PC) TAPE AND REEL (1500PC) PART MARKING* PACKAGE DESCRIPTION MSL RATING SPECIFIED JUNCTION TEMPERATURE RANGE LTC6813ILWE-1#3ZZPBF LTC6813ILWE-1#3ZZTRPBF LTC6813LWE-1 64-Lead Plastic eLQFP 3 –40°C to 85°C LTC6813HLWE-1#3ZZPBF LTC6813HLWE-1#3ZZTRPBF LTC6813LWE-1 64-Lead Plastic eLQFP 3 –40°C to 125°C Contact the factory for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container. Tape and reel specifications. Some packages are available in 500 unit reels through designated sales channels with #TRMPBF suffix. **Versions of this part are available with controlled manufacturing to support the quality and reliability requirements of automotive applications. These models are designated with a #3ZZ suffix. Only the automotive grade products shown are available for use in automotive applications. Contact your local Analog Devices account representative for specific product ordering information and to obtain the specific Automotive Reliability reports for these models. Rev. B For more information www.analog.com 3 LTC6813-1 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full specified temperature range, otherwise specifications are at TA = 25°C. The test conditions are V+ = 59.4V, VREG = 5.0V unless otherwise noted. The ISOMD pin is tied to the V– pin, unless otherwise noted. SYMBOL PARAMETER ADC DC Specifications Measurement Resolution ADC Offset Voltage ADC Gain Error Total Measurement Error (TME) in Normal Mode Total Measurement Error (TME) in Filtered Mode 4 CONDITIONS (Note 2) (Note 2) C(n) to C(n–1), GPIO(n) to V– = 0 C(n) to C(n–1) = 2.0 C(n) to C(n–1), GPIO(n) to V– = 2.0, LTC6813I C(n) to C(n–1), GPIO(n) to V– = 2.0, LTC6813H C(n) to C(n–1) = 3.3 C(n) to C(n–1), GPIO(n) to V– = 3.3, LTC6813I C(n) to C(n–1), GPIO(n) to V– = 3.3, LTC6813H C(n) to C(n–1) = 4.2 C(n) to C(n–1), GPIO(n) to V– = 4.2, LTC6813I C(n) to C(n–1), GPIO(n) to V– = 4.2, LTC6813H C(n) to C(n–1), GPIO(n) to V– = 5.0 Sum of All Cells Internal Temperature, T = Maximum Specified Temperature VREG Pin VREF2 Pin Digital Supply Voltage, VREGD C(n) to C(n–1), GPIO(n) to V– = 0 C(n) to C(n–1) = 2.0 C(n) to C(n–1), GPIO(n) to V– = 2.0, LTC6813I C(n) to C(n–1), GPIO(n) to V– = 2.0, LTC6813H C(n) to C(n–1) = 3.3 C(n) to C(n–1), GPIO(n) to V– = 3.3, LTC6813I C(n) to C(n–1), GPIO(n) to V– = 3.3, LTC6813H C(n) to C(n–1) = 4.2 C(n) to C(n–1), GPIO(n) to V– = 4.2, LTC6813I C(n) to C(n–1), GPIO(n) to V– = 4.2, LTC6813H C(n) to C(n–1), GPIO(n) to V– = 5.0 Sum of All Cells Internal Temperature, T = Maximum Specified Temperature VREG Pin VREF2 Pin Digital Supply Voltage, VREGD MIN TYP MAX 0.1 0.1 0.01 ±0.2 ±1.6 ±1.8 ±2.0 ±2.2 ±3.0 ±3.3 ±2.8 ±3.8 ±4.2 l l l l l l ±1 ±0.05 ±5 l l l l –1 –0.05 –0.5 –0.15 0.05 0.5 ±0.1 l l l l l l l l 0 0.20 1.5 ±1.6 ±1.8 ±2.0 ±2.2 ±3.0 ±3.3 ±2.8 ±3.8 ±4.2 l l ±0.35 –1 –0.05 –0.5 ±1 ±0.05 ±5 ±0.35 –0.15 0.05 0.8 0 0.20 1.5 UNITS mV/Bit mV % mV mV mV mV mV mV mV mV mV mV mV % °C % % % mV mV mV mV mV mV mV mV mV mV mV % °C % % % Rev. B For more information www.analog.com LTC6813-1 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full specified temperature range, otherwise specifications are at TA = 25°C. The test conditions are V+ = 59.4V, VREG = 5.0V unless otherwise noted. The ISOMD pin is tied to the V– pin, unless otherwise noted. SYMBOL PARAMETER Total Measurement Error (TME) in Fast Mode Input Range IL Input Leakage Current When Inputs Are Not Being Measured Input Current When Inputs Are Being Measured (State: Core = MEASURE) Input Current During Open Wire Detection Voltage Reference Specifications 1st Reference Voltage VREF1 1st Reference Voltage TC 1st Reference Voltage Thermal Hysteresis 1st Reference Voltage Long Term Drift 2nd Reference Voltage VREF2 2nd Reference Voltage TC 2nd Reference Voltage Thermal Hysteresis 2nd Reference Voltage Long Term Drift General DC Specifications V+ Supply Current IVP (See Figure 1: LTC6813-1 Operation State Diagram) CONDITIONS C(n) to C(n–1), GPIO(n) to V– = 0 C(n) to C(n–1), GPIO(n) to V– = 2.0 C(n) to C(n–1), GPIO(n) to V– = 3.3 C(n) to C(n–1), GPIO(n) to V– = 4.2 C(n) to C(n–1), GPIO(n) to V– = 5.0 Sum of All Cells Internal Temperature, T = Maximum Specified Temperature VREG Pin VREF2 Pin Digital Supply Voltage, VREGD C(n) n = 1 to 18 C0 GPIO(n) n = 1 to 9 C(n) n = 0 to 18 GPIO(n) n = 1 to 9 C(n) n = 0 to 18 GPIO(n) n = 1 to 9 VREF1 Pin, No Load VREF1 Pin, No Load VREF1 Pin, No Load MIN l l ±10 ±0.15 ±5 l l l l l l l MAX ±4 ±6 ±8.3 l –1.5 –0.18 –2.5 C(n–1) 0 0 –0.15 0.05 –0.4 ±0.5 % % % V V V nA nA μA μA μA 10 l 10 ±1 ±1 100 ±250 3.15 3 20 3.3 l 70 l 3.0 130 20 VREF2 Pin, No Load VREF2 Pin, 5k Load to V– VREF2 Pin, No Load VREF2 Pin, No Load l l 2.993 2.992 VREF2 Pin, No Load 3 3 10 100 VREG = 0V l VREG = 5V l State: Core = STANDBY l State: Core = REFUP l State: Core = MEASURE l 9 6 0.4 0.375 0.65 0.6 V ppm/°C ppm ppm/√khr 3.007 3.008 60 VREG = 0V VREG = 5V UNITS mV mV mV mV mV % °C 1 0.32 2 C(n–1) + 5 1 5 ±250 l VREF1 Pin, No Load State: Core = SLEEP, isoSPI = IDLE TYP ±2 V V ppm/°C ppm ppm/√khr 6.1 11 µA 6.1 3 18 5 µA µA 3 14 14 0.55 0.55 0.95 0.95 9 22 28 0.8 0.825 1.35 1.4 µA µA µA mA mA mA mA Rev. B For more information www.analog.com 5 LTC6813-1 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full specified temperature range, otherwise specifications are at TA = 25°C. The test conditions are V+ = 59.4V, VREG = 5.0V unless otherwise noted. The ISOMD pin is tied to the V– pin, unless otherwise noted. SYMBOL IREG(CORE) PARAMETER VREG Supply Current (See Figure 1: LTC6813-1 Operation State Diagram) CONDITIONS State: Core = SLEEP, isoSPI = IDLE MIN VREG = 5V VREG = 5V l State: Core = STANDBY l State: Core = REFUP l State: Core = MEASURE l IREG(isoSPI) Additional VREG Supply Current if isoSPI in READY/ACTIVE States ISOMD = 0, RB1 + RB2 = 2k Note: ACTIVE State Current Assumes tCLK = 1µs, (Note 3) ISOMD = 1, RB1 + RB2 = 2k ISOMD = 0, RB1 + RB2 = 20k ISOMD = 1, RB1 + RB2 = 20k V+ Supply Voltage VREG V+ to C18 Voltage V+ to C12 Voltage C13 Voltage C7 Voltage VREG Supply Voltage DRIVE Output Voltage READY l ACTIVE READY ACTIVE READY ACTIVE READY ACTIVE l TME Specifications Met TME Specifications Met TME Specifications Met TME Specifications Met TME Specifications Met TME Supply Rejection < 1mV/V Sourcing 1µA l l l l l l l l Sourcing 500µA Digital Supply Voltage Discharge Switch ON Resistance Thermal Shutdown Temperature Watch Dog Timer Pin Low VOL(WDT) General Purpose I/O Pin Low VOL(GPIO) ADC Timing Specifications Measurement + Calibration Cycle tCYCLE (Figure 3, Time When Starting from the REFUP Figure 4, State in Normal Mode Figure 6) Measurement + Calibration Cycle Time When Starting from the REFUP State in Filtered Mode Measurement + Calibration Cycle Time When Starting from the REFUP State in Fast Mode tSKEW1 (Figure 6) 6 Skew Time. The Time Difference Between Cell 18 and GPIO1 Measurements, Command = ADCVAX 5.6 4.0 7.0 1.0 1.3 1.6 1.8 16 –0.3 MAX 6 UNITS µA 3.1 35 35 0.9 0.9 15 15 4.5 9 60 65 1.4 1.5 16 16.5 5.2 µA µA µA mA mA mA mA mA 6.8 5.2 8.5 1.8 2.3 2.5 3.1 60 8.1 6.5 10.5 2.4 3.3 3.5 4.8 90 mA mA mA mA mA mA mA V V V V V V V V 40 l l l l l VREGD 10 6 0.4 0.3 14 13.5 3.6 TYP 3.1 l l VCELL = 3.6V l WDT Pin Sinking 4mA GPIO Pin Sinking 4mA (Used as Digital Output) l Measure 18 Cells Measure 3 Cells Measure 18 Cells and 2 GPIO Inputs Measure 18 Cells Measure 3 Cells Measure 18 Cells and 2 GPIO Inputs Measure 18 Cells Measure 3 Cells Measure 18 Cells and 2 GPIO Inputs Fast Mode Normal Mode l 2.5 1 4.5 5.4 5.2 5.1 2.7 5 5.7 5.7 5.5 5.9 6.1 5.7 3 4 150 6.1 3.6 10 l l l l l l l l l l l 1743 303 2337 150.0 25.0 200.0 834 151 1124 144 404 2343 407 3140 201.3 33.6 268.5 1121 203 1511 194 543 0.4 0.4 V V Ω °C V V 2488 432 3335 213.8 35.7 285.1 1191 215 1605 206 577 µs µs µs ms ms ms µs µs µs µs µs Rev. B For more information www.analog.com LTC6813-1 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full specified temperature range, otherwise specifications are at TA = 25°C. The test conditions are V+ = 59.4V, VREG = 5.0V unless otherwise noted. The ISOMD pin is tied to the V– pin, unless otherwise noted. SYMBOL tSKEW2 (Figure 3) tWAKE tSLEEP (Figure 26) PARAMETER Skew Time. The Time Difference Between Cell 18 and Cell 1 Measurements, Command = ADCV Regulator Start-Up Time Watchdog or Discharge Timer Reference Wake-Up Time. Added to tREFUP Figure 3 for tCYCLE Time When Starting from the example) STANDBY State. tREFUP = 0 When Starting from Other States. fS ADC Clock Frequency SPI Interface DC Specifications SPI Pin Digital Input Voltage High VIH(SPI) SPI Pin Digital Input Voltage Low VIL(SPI) Configuration Pin Digital Input Voltage VIH(CFG) High Configuration Pin Digital Input Voltage VIL(CFG) Low Digital Input Current ILEAK(DIG) Digital Output Low VOL(SDO) isoSPI DC Specifications (See Figure 17) Voltage on IBIAS Pin VBIAS IB AIB Isolated Interface Bias Current Isolated Interface Current Gain CONDITIONS Fast Mode Normal Mode l VREG Generated from DRIVE Pin (Figure 32) DTEN Pin = 0 or DCTO[3:0] = 0000 DTEN Pin = 1 and DCTO[3:0] ≠ 0000 l l 1.8 0.5 tREFUP is Independent of the Number of Channels Measured and the ADC Mode l 2.7 TYP 233 670 MAX 248 711 UNITS µs µs 200 2 400 2.2 120 µs sec min 3.5 4.4 ms 3.3 Pins CSB, SCK, SDI Pins CSB, SCK, SDI Pins ISOMD, DTEN, GPIO1 to GPIO9 l Pins ISOMD, DTEN, GPIO1 to GPIO9 MHz 0.8 V V V l 1.2 V Pins CSB, SCK, SDI, ISOMD, DTEN Pin SDO Sinking 1mA l ±1 0.3 μA V READY/ACTIVE State IDLE State RBIAS = 2k to 20k VA = ≤ 1.6V IB = 1mA IB = 0.1mA VA = |VIP – VIM| VTCMP = ATCMP • VICMP l 1.9 2.1 l 0.1 18 18 0.2 1.0 22 24.5 1.6 1.5 V V mA mA/mA mA/mA V V l 0.4 ±1 ±1 0.6 µA µA V/V l (VREG – VICMP/3 – 167mV) 26 35 45 V kΩ 200 240 mV ns Transmitter Pulse Amplitude Threshold-Setting Voltage on ICMP Pin VICMP = 0V to VREG ILEAK(ICMP) Input Leakage Current on ICMP Pin IDLE State, VIP or VIM, 0V to VREG ILEAK(IP/IM) Leakage Current on IP and IM Pins Receiver Comparator Threshold VCM = VREG/2 to VREG – 0.2V, VICMP = 0.2V to ATCMP Voltage Gain 1.5V Receiver Common Mode Bias IP/IM Not Driving VCM Receiver Input Resistance Single-Ended to IPA, IMA, IPB, IMB RIN isoSPI Idle/Wake-Up Specifications (See Figure 26) Differential Wake-Up Voltage tDWELL = 240ns VWAKE Dwell Time at VWAKE Before Wake VWAKE = 200mV tDWELL Detection Start-Up Time After Wake Detection tREADY Idle Timeout Duration tIDLE isoSPI Pulse Timing Specifications (See Figure 22) Chip-Select Half-Pulse Width Transmitter t1/2PW(CS) Chip-Select Signal Filter Receiver tFILT(CS) Chip-Select Pulse Inversion Delay Transmitter tINV(CS) Receiver tWNDW(CS) Chip-Select Valid Pulse Window VA VICMP l MIN 174 500 2.3 l l 2.7 l l l 2.0 0 20 20 l l l l l l 0.5 l 4.3 5.5 10 6.7 µs ms l 120 70 120 220 150 90 155 270 180 110 190 330 ns ns ns ns l l l l Rev. B For more information www.analog.com 7 LTC6813-1 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full specified temperature range, otherwise specifications are at TA = 25°C. The test conditions are V+ = 59.4V, VREG = 5.0V unless otherwise noted. The ISOMD pin is tied to the V– pin, unless otherwise noted. SYMBOL PARAMETER CONDITIONS Data Half-Pulse Width Transmitter t1/2PW(D) Data Signal Filter Receiver tFILT(D) Data Pulse Inversion Delay Transmitter tINV(D) Data Valid Pulse Window Receiver tWNDW(D) SPI Timing Requirements (See Figure 16 and Figure 25) SCK Period (Note 4) tCLK SDI Setup Time before SCK Rising t1 Edge SDI Hold Time after SCK Rising Edge t2 SCK Low tCLK = t3 + t4 ≥ 1µs t3 SCK High tCLK = t3 + t4 ≥ 1µs t4 CSB Rising Edge to CSB Falling Edge t5 SCK Rising Edge to CSB Rising Edge (Note 4) t6 CSB Falling Edge to SCK Rising Edge (Note 4) t7 isoSPI Timing Specifications (See Figure 25) SCK Falling Edge to SDO Valid (Note 5) t8 SCK Rising Edge to Short ±1 t9 Transmit CSB Transition to Long ±1 Transmit t10 CSB Rising Edge to SDO Rising (Note 5) t11 Data Return Delay tRTN Chip-Select Daisy-Chain Delay tDSY(CS) Data Daisy-Chain Delay tDSY(D) Data Daisy-Chain Lag (vs = [tDSY(D) + t1/2PW(D)] – [tDSY(CS) + t1/2PW(CS)] tLAG Chip-Select) Chip-Select High-to-Low Pulse t5(GOV) Governor Data to Chip-Select Pulse Governor t6(GOV) tBLOCK isoSPI Port Reversal Blocking Window Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The ADC specifications are guaranteed by the Total Measurement Error specification. Note 3: The ACTIVE state current is calculated from DC measurements. The ACTIVE state current is the additional average supply current into VREG when there is continuous 1MHz communications on the isoSPI ports with 50% data 1’s and 50% data 0’s. Slower clock rates reduce the supply current. See Applications Information section for additional details. 8 l l l l l l l l l l l l MIN 40 10 40 70 TYP 50 25 55 90 UNITS ns ns ns ns 1 25 µs ns 25 200 200 0.65 0.8 1 ns ns ns µs µs µs l l l l l MAX 60 35 65 110 325 l 375 120 250 35 60 50 ns ns 60 200 425 180 300 70 ns ns ns ns ns ns l 200 0 l 0.6 0.82 µs l 0.8 1.05 µs l 2 10 µs l Note 4: These timing specifications are dependent on the delay through the cable, and include allowances for 50ns of delay each direction. 50ns corresponds to 10m of CAT5 cable (which has a velocity of propagation of 66% the speed of light). Use of longer cables would require derating these specs by the amount of additional delay. Note 5: These specifications do not include rise or fall time of SDO. While fall time (typically 5ns due to the internal pull-down transistor) is not a concern, rising-edge transition time tRISE is dependent on the pull-up resistance and load capacitance on the SDO pin. The time constant must be chosen such that SDO meets the setup time requirements of the MCU. Rev. B For more information www.analog.com LTC6813-1 TYPICAL PERFORMANCE CHARACTERISTICS Measurement Error vs Temperature Measurement Error vs Input, Normal Mode 2.0 2.0 10 ADC MEASUREMENTS 1.5 AVERAGED AT EACH INPUT 1.0 0.5 0 –0.5 –1.0 –1.5 10 ADC MEASUREMENTS 1.5 AVERAGED AT EACH INPUT MEASUREMENT ERROR (mV) MEASUREMENT ERROR (mV) MEASUREMENT ERROR (mV) Measurement Error vs Input, Filtered Mode 2.0 CELL VOLTAGE = 3.3V 1.5 5 TYPICAL UNITS 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 –2.0 1.0 0.5 0 –0.5 –1.0 –1.5 0 1 2 3 INPUT (V) 4 68131 G01 5 –2.0 1.0 1.0 0.9 0.9 6 0.8 0.8 4 0.7 0.7 PEAK NOISE (mV) 10 ADC MEASUREMENTS 8 AVERAGED AT EACH INPUT 0 –4 0.6 0.5 0.4 0.3 0.4 0.3 0.2 0.2 0.1 0.1 –10 0 2 3 INPUT (V) 4 5 0 1 2 3 INPUT (V) 4 68131 G04 25 Measurement Gain Error Thermal Hysteresis, Hot 9 6 5 4 3 2 1 2 3 INPUT (V) 4 5 Measurement Gain Error Thermal Hysteresis, Cold 25 TA = 85°C TO 25°C 20 NUMBER OF PARTS PEAK NOISE (mV) 8 7 0 68131 G06 TA = –40°C TO 25°C 20 NUMBER OF PARTS 10 0 5 68131 G05 Measurement Noise vs Input, Fast Mode 5 0.5 –8 1 4 0.6 –6 0 2 3 INPUT (V) Measurement Noise vs Input, Filtered Mode PEAK NOISE (mV) 10 –2 1 68131 G03 Measurement Noise vs Input, Normal Mode 2 0 68131 G02 Measurement Error vs Input, Fast Mode MEASUREMENT ERROR (mV) TA = 25°C, unless otherwise noted. 15 10 5 15 10 5 1 0 0 1 2 3 INPUT (V) 4 5 68131 G07 0 –50 –30 –10 10 30 CHANGE IN GAIN ERROR (ppm) 50 68131 G08 0 –75 –50 –25 0 25 50 CHANGE IN GAIN ERROR (ppm) 75 68131 G09 Rev. B For more information www.analog.com 9 LTC6813-1 TYPICAL PERFORMANCE CHARACTERISTICS Noise Filter Response 2.0 6 –10 1.5 5 4 3 2 MEASUREMENT ERROR (mV) 0 –20 –30 –40 –50 1 –60 0 –50 –25 0 25 50 75 100 125 150 175 200 CHANGE IN GAIN ERROR (ppm) –70 10 0.5 0 –0.5 MEASUREMENT ERROR OF CELL1 WITH 3.3V INPUT VREG GENERATED FROM DRIVE PIN, FIGURE 32 0 10 20 30 40 50 V+ (V) 60 68131 G12 Measurement Error vs Common Mode Voltage 2.0 1.5 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 C18–C17 = 3.3V C18 = 59.4V 68131 G13 PSRR (dB) –50 10M 68131 G16 –1.5 20 25 30 35 40 45 50 C17 VOLTAGE (V) 55 60 68131 G15 –20 –40 –50 –60 –100 100 C18 – C17 = 3.3V V+ = 63.3V VCM(IN) = 5VP-P –10 NORMAL MODE CONVERSIONS –30 –40 –50 –60 –70 –80 –90 –90 1M –1.0 0 –80 –70 –0.5 Measurement Error CMRR vs Frequency –70 –60 0 68131 G14 V+ DC = 59.4V –10 V+ AC = 5VP-P 1BIT CHANGE < –90dB –20 V REG GENERATED FROM –30 DRIVE PIN, FIGURE 32 –40 0.5 –2.0 0 –30 1.0 Measurement Error Due to a V+ AC Disturbance –20 10 –1.0 68131 G11 V+ (V) VREG(DC) = 5V V = 0.5VP-P –10 REG(AC) 1BIT CHANGE < –70dB 10k 100k FREQUENCY (Hz) –0.5 14kHz 27kHz 2kHz 3kHz 7kHz –2.0 56.4 57.4 58.4 59.4 60.4 61.4 62.4 63.4 0 1k 0 2.0 Measurement Error Due to a VREG AC Disturbance –80 100 0.5 –2.0 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 VREG (V) 1M REJECTION (dB) –2.0 1k 10k 100k INPUT FREQUENCY (Hz) CELL18 MEASUREMENT ERROR (mV) 1.0 TOP CELL MEASUREMENT ERROR (mV) MEASUREMENT ERROR (mV) 1.5 –1.5 1.0 Top Cell Measurement Error vs V+ 2.0 –1.0 100 26Hz 422Hz 1kHz Measurement Error vs V+ VIN = 2V VIN = 3.3V VIN = 4.2V –1.5 68131 G10 PSRR (dB) Measurement Error vs VREG 7 NOISE REJECTION (dB) NUMBER OF PARTS Measurement Error Due to IR Reflow TA = 25°C, unless otherwise noted. 1k 10k 100k FREQUENCY (Hz) 1M 10M 68131 G17 –100 100 1k 10k 100k FREQUENCY (Hz) 1M 10M 68131 G18 Rev. B For more information www.analog.com LTC6813-1 TYPICAL PERFORMANCE CHARACTERISTICS 20 –10 100nF 10nF 1µF –15 100 1k INPUT RESISTANCE, R (Ω) 16 8 4 0 –4 –8 C = 1nF C = 10nF C = 100nF C = 1μF C = 10μF –12 –16 1 5 4 30 40 50 60 70 V+ (V) 10 100 1k INPUT RESISTANCE, R (Ω) 125°C 85°C 25°C 0°C –40°C 80 90 45 10 20 30 40 50 60 70 V+ (V) 3.150 MEASURE SUPPLY CURRENT = V+ CURRENT + VREG CURRENT 80 125°C 85°C 25°C 0°C –40°C 14.5 14.0 10 20 30 40 50 V+ (V) 60 VREF1 vs Temperature 90 68131 G25 1.4 1.3 1.2 125°C 85°C 25°C 0°C –40°C 1.1 10 20 30 40 50 60 70 80 90 68131 G24 VREF2 vs Temperature 5 TYPICAL UNITS 3.004 3.003 3.002 VREF2 (V) 3.135 3.130 3.125 3.110 –50 125 1.5 3.005 5 TYPICAL UNITS 3.001 3.000 2.999 2.998 2.997 3.115 80 100 REFUP SUPPLY CURRENT = V + CURRENT + VREG CURRENT 68131 G23 3.120 70 0 25 50 75 TEMPERATURE (°C) V+ (V) 3.145 16.0 1.6 1.0 90 3.140 15.0 –25 REFUP Supply Current vs V+ 50 68131 G22 15.5 VREG = 4.5V VREG = 5V VREG = 5.5V 68131 G21 1.7 55 40 VREF1 (V) MEASURE SUPPLY CURRENT (mA) 16.5 2.10 –50 10k STANDBY SUPPLY CURRENT = + 75 V CURRENT + VREG CURRENT 125°C 85°C 70 25°C 0°C 65 –40°C 60 Measure Supply Current vs V+ 17.0 2.20 REFUP SUPPLY CURRENT (mA) STANDBY SUPPLY CURRENT (µA) SLEEP SUPPLY CURRENT (µA) 6 20 2.25 Standby Supply Current vs V+ SLEEP SUPPLY CURRENT = V+ CURRENT + VREG CURRENT 10 2.30 80 7 3 2.35 68131 G20 Sleep Supply Current vs V+ 8 2.40 2.15 68131 G19 9 18-CELL NORMAL MODE CONVERSIONS 2.45 12 –20 10k 2.50 TIME BETWEEN MEASUREMENTS > 3RC MEASUREMENT TIME (ms) GPIO MEASUREMENT ERROR (mV) CELL MEASUREMENT ERROR (mV) 5 –5 Measurement Time vs Temperature GPIO Measurement Error vs Input RC Values Cell Measurement Error Range vs Input RC Values 0 TA = 25°C, unless otherwise noted. 2.996 –25 0 25 50 75 TEMPERATURE (°C) 100 125 68131 G26 2.995 –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 68131 G27 Rev. B For more information www.analog.com 11 LTC6813-1 TYPICAL PERFORMANCE CHARACTERISTICS VREF2 VREG Line Regulation 320 CHANGE IN VREF2 (ppm) 80 0 –80 –160 40 20 0 –20 –60 –80 –320 4.75 5 5.25 VREG (V) 15 125°C 85°C 25°C –40°C –40 –240 5.5 –100 10 25 40 55 70 85 100 V+ (V) 68131 G28 15 TA = 85°C TO 25°C V+ = 59.4V VREG = 5V –200 –400 –600 –800 115 –1000 0.01 125°C 85°C 25°C –40°C 0.1 1 IOUT (mA) 68131 G29 VREF2 Thermal Hysteresis, Cold VREF2 Thermal Hysteresis, Hot VREF2 Load Regulation 0 60 160 –400 4.5 200 VREG GENERATED FROM 80 DRIVE PIN, FIGURE 32 125°C 85°C 25°C –40°C 240 VREF2 V+ Line Regulation CHANGE IN VREF2 (ppm) IL = 0.6mA 100 CHANGE IN VREF2 (ppm) 400 TA = 25°C, unless otherwise noted. 5 TA = –40°C TO 25°C 10 68131 G30 VREF2 Change Due to IR Reflow 10 5 NUMBER OF PARTS NUMBER OF PARTS NUMBER OF PARTS 4 10 5 3 2 1 0 –125–100 –75 –50 –25 0 25 50 75 100 125 CHANGE IN VREF2 (ppm) 0 –75 –50 –25 0 25 50 CHANGE IN VREF2 (ppm) 68131 G31 25 CHANGE IN VDRIVE (mV) VDRIVE (V) 5.7 5.6 5.5 –10 –20 10 5 0 –25 0 25 50 75 TEMPERATURE (°C) 100 125 –10 –30 –40 –50 –60 –70 125°C 85°C 25°C 0°C –40°C –80 –90 15 30 300 VDRIVE Load Regulation –5 68131 G34 12 15 –100 0 100 200 CHANGE IN VREF2 (ppm) 0 125°C 85°C 25°C 0°C –40°C 20 –200 68131 G33 68131 G32 CHANGE IN VDRIVE (mV) 5 TYPICAL UNITS NO LOAD 5.8 5.4 –50 0 –300 100 VDRIVE V+ Line Regulation VDRIVE vs Temperature 5.9 75 45 60 V+ (V) 75 90 68131 G35 V+ = 59.4V –100 0.01 0.1 IOUT (mA) 1 68131 G36 Rev. B For more information www.analog.com LTC6813-1 TYPICAL PERFORMANCE CHARACTERISTICS Discharge Switch On-Resistance vs Cell Voltage 50 8 6 4 2 1 1.5 2 2.5 3 3.5 CELL VOLTAGE (V) 4 4.5 40 35 30 25 20 15 10 5 0 5 0 25 50 75 100 125 150 175 200 INTERNAL DISCHARGE CURRENT (mA/CELL) VREF1 1V/DIV VREF2 1V/DIV CS CS 5V/DIV 4 2 0 –2 –4 –6 –8 –10 –50 6.0 VDRIVE VDRIVE 2V/DIV VREG VREG 2V/DIV CS CS 5V/DIV 68131 G40 500µs/DIV 6 –25 0 25 50 75 TEMPERATURE (°C) 100 125 isoSPI Current (READY) vs Temperature VREG: CL = 1µF VREG GENERATED FROM DRIVE PIN VREF1 VREF2 5 TYPICAL UNITS 8 68131 G39 VREG and VDRIVE Power-Up VREF1 and VREF2 Power-Up VREF1: CL = 1µF VREF2: CL = 1µF, RL = 5kΩ 10 68131 G38 68131 G37 5.0 4.5 4.0 68131 G41 50µs/DIV IB = 1mA 5.5 isoSPI CURRENT (mA) 0.5 1-CELL DISCHARGING 6-CELL DISCHARGING 12-CELL DISCHARGING 18-CELL DISCHARGING 45 TEMPERATURE MEASUREMENT ERROR (°C) INCREASE IN DIE TEMPERATURE (°C) DISCHARGE SWITCH ON-RESISTANCE (Ω) ON-RESISTANCE OF INTERNAL 18 DISCHARGE SWITCH MEASURED BETWEEN S(n) AND C(n–1) 16 125°C 14 85°C 25°C 12 –40°C 10 0 Internal Die Temperature Measurement Error vs Temperature Internal Die Temperature Increase vs Discharge Current 20 0 TA = 25°C, unless otherwise noted. 3.5 –50 ISOMD = V– ISOMD = VREG –25 0 25 50 75 TEMPERATURE (°C) 100 125 68131 G42 isoSPI Current (ACTIVE) vs isoSPI Clock Frequency ISOMD = VREG IB = 1mA IBIAS PIN VOLTAGE (V) isoSPI CURRENT (mA) 8 7 6 5 4 3 2 IBIAS Voltage vs Temperature 2.02 WRITE READ 0 200 400 600 800 isoSPI CLOCK FREQUENCY (kHz) 1000 68131 G43 IBIAS Voltage Load Regulation 2.010 IB = 1mA 3 PARTS 2.01 IBIAS PIN VOLTAGE (V) 9 2.00 1.99 1.98 –50 –25 0 25 50 75 TEMPERATURE (°C) 100 125 68131 G44 2.005 2.000 1.995 1.990 0 200 400 600 800 IBIAS CURRENT, IB (µA) 1000 68131 G45 Rev. B For more information www.analog.com 13 LTC6813-1 TYPICAL PERFORMANCE CHARACTERISTICS 23 22 22 21 20 200 400 600 800 IBIAS CURRENT, IB (µA) 0.56 21 20 19 18 –50 1000 68131 G46 IB = 100μA IB = 1mA –25 0 25 50 75 TEMPERATURE (°C) 100 isoSPI Comparator Threshold Gain (Port A/Port B) vs Receiver Common Mode 0.54 0.52 0.50 0.48 0.46 VICMP = 0.2V VICMP = 1V 0.44 2.5 3 3.5 4 4.5 5 RECEIVER COMMON MODE, VCM (V) 5.5 0.56 3.5 3.0 IB = 100μA IB = 1mA 0 0.5 1 1.5 PULSE AMPLITUDE, VA (V) 2 68131 G48 isoSPI Comparator Threshold Gain (Port A/Port B) vs ICMP Voltage 3 PARTS 0.52 0.50 0.48 0.46 0.44 0 0.2 0.4 0.6 0.8 1 1.2 ICMP VOLTAGE (V) 1.4 1.6 68131 G50 Typical Wake-Up Pulse Amplitude (Port A/Port B) vs Dwell Time 300 0.56 0.54 0.52 0.50 0.48 0.46 VICMP = 0.2V VICMP = 1V –25 0 25 50 75 TEMPERATURE (°C) 100 WAKE-UP PULSE AMPLITUDE, VWAKE (mV) COMPARATOR THRESHOLD GAIN, ATCMP (V/V) 4.0 0.54 isoSPI Comparator Threshold Gain (Port A/Port B) vs Temperature GUARANTEED WAKE-UP REGION 250 200 150 100 125 68131 G51 14 4.5 2.5 125 68131 G49 0.44 –50 5.0 68131 G47 COMPARATOR THRESHOLD GAIN, ATCMP (V/V) 0 COMPARATOR THRESHOLD GAIN, ATCMP (V/V) 18 VA = 1.6V VA = 1V VA = 0.5V 5.5 DRIVER COMMON MODE (V) 23 19 isoSPI Driver Common Mode Voltage (Port A/Port B) vs Pulse Amplitude isoSPI Driver Current Gain (Port A/Port B) vs Temperature CURRENT GAIN, AIB (mA/mA) CURRENT GAIN, AIB (mA) isoSPI Driver Current Gain (Port A/Port B) vs IBIAS Current TA = 25°C, unless otherwise noted. 50 0 0 100 200 300 400 500 WAKE-UP DWELL TIME, TDWELL (ns) 600 68131 G52 Rev. B For more information www.analog.com LTC6813-1 PIN FUNCTIONS C0 to C18: Cell Inputs. S1 to S18: Balance Inputs/Outputs. 18 internal N-MOSFETs are connected between S(n) and C(n–1) for discharging cells. V+: Positive Supply Pin. V–: Negative Supply Pins. The V– pins must be shorted together, external to the IC. VREF2: Buffered 2nd Reference Voltage for Driving Multiple 10k Thermistors. Bypass with an external 1μF capacitor. watchdog timer circuit will reset the LTC6813-1 and the WDT pin will go high impedance. Serial Port Pins PORT B (Pins 57, 58, 63 and 64) PORT A (Pins 53, 54, 61 and 62) VREF1: ADC Reference Voltage. Bypass with an external 1μF capacitor. No DC loads allowed. GPIO[1:9]: General Purpose I/O. Can be used as digital inputs or digital outputs, or as analog inputs with a measurement range from V– to 5V. GPIO[3:5] can be used as an I2C or SPI port. DTEN: Discharge Timer Enable. Connect this pin to VREG to enable the Discharge Timer. DRIVE: Connect the base of an NPN to this pin. Connect the collector to V+ and the emitter to VREG. VREG: 5V Regulator Input. Bypass with an external 1μF capacitor. ISOMD: Serial Interface Mode. Connecting ISOMD to VREG configures pins 53, 54, 61 and 62 of the LTC6813-1 for 2-wire isolated interface (isoSPI) mode. Connecting ISOMD to V– configures the LTC6813-1 for 4-wire SPI mode. WDT: Watchdog Timer Output Pin. This is an open drain NMOS digital output. It can be left unconnected or connected with a 1M resistor to VREG. If the LTC6813-1 does not receive a valid command within 2 seconds, the ISOMD = VREG ISOMD = V– IPB IPB IMB IMB ICMP ICMP IBIAS IBIAS (NC) SDO (NC) SDI IPA SCK IMA CSB CSB, SCK, SDI, SDO: 4-Wire Serial Peripheral Interface (SPI). Active low chip select (CSB), serial clock (SCK) and serial data in (SDI) are digital inputs. Serial data out (SDO) is an open drain NMOS output pin. SDO requires a 5k pull-up resistor. IPA, IMA: Isolated 2-Wire Serial Interface Port A. IPA (plus) and IMA (minus) are a differential input/output pair. IPB, IMB: Isolated 2-Wire Serial Interface Port B. IPB (plus) and IMB (minus) are a differential input/output pair. IBIAS: Isolated Interface Current Bias. Tie IBIAS to V– through a resistor divider to set the interface output current level. When the isoSPI interface is enabled, the IBIAS pin voltage is 2V. The IPA/IMA or IPB/IMB output current drive is set to 20 times the current, IB, sourced from the IBIAS pin. ICMP: Isolated Interface Comparator Voltage Threshold Set. Tie this pin to the resistor divider between IBIAS and V– to set the voltage threshold of the isoSPI receiver comparators. The comparator thresholds are set to half the voltage on the ICMP pin. Exposed Pad: V–. The Exposed Pad must be soldered to PCB. Rev. B For more information www.analog.com 15 LTC6813-1 BLOCK DIAGRAM 64 1 2 3 4 5 6 7 8 9 IPB 63 IMB 12 61 SCK (IPA) CSB (IMA) 60 59 V– V– 58 ICMP 57 IBIAS C18 C17 C16 C15 C14 C13 14 15 16 WDT 55 ISOMD 54 SDO (NC) C18 VREGD S18 + P 6-CELL MUX 53 SDI (NC) 52 DTEN VREF1 50 49 VREF2 DRIVE VREG POR 16 ADC3 VREG GPIO9 IPB SERIAL PORT B – M 51 IMB ICMP GPIO8 IBIAS C17 C12 C11 C10 C9 C8 C7 S17 C16 + P 7-CELL MUX 16 ADC2 DIGITAL FILTERS – M GPIO7 CSB (IMA) LOGIC AND MEMORY SCK (IPA) SERIAL PORT A GPIO6 SDO (NC) SDI (NC) GPIO5 S16 GPIO4 C6 C5 C4 C3 C2 C1 C0 C15 S15 S14 + P GPIO AND I2C 16 ADC1 7-CELL MUX M GPIO3 – GPIO2 WDT ISOMD 18 BALANCE FETs TEMP VREF2 SC VREG VREGD P S(n) GPIO1 GPIO[9:1] C0 AUX MUX C13 S1 M C(n–1) 13 56 VREF1 V+ 10 C14 11 62 S13 C1 C18 DIE TEMPERATURE TEMP C12 S12 DISCHARGE TIMER DTEN C11 S11 17 16 C10 18 S10 19 V+ LDO2 S9 21 C8 22 DRIVE V+ VREGD POR LDO1 C0 C9 20 VREF2 1ST REFERENCE VREF1 S2 47 46 45 44 43 42 41 40 39 38 37 36 35 REGULATORS SC WATCH DOG TIMER WDT 2ND REFERENCE 48 S8 23 C7 24 S7 25 C6 26 S3 S6 27 C2 C5 28 S5 29 C4 30 S4 31 34 33 C3 32 68131 BD Rev. B For more information www.analog.com LTC6813-1 IMPROVEMENTS FROM THE LTC6811-1 The LTC6813-1 is an evolution of the LTC6811-1 design. The following table summarizes the feature changes and additions in the LTC6813-1. ADDITIONAL LTC6813-1 FEATURES BENEFITS RELEVANT DATA SHEET SECTION(S) The LTC6813-1 Has 3 ADCs Operating Simultaneously vs 2 ADCs on LTC6811-1 3 Cells Can Be Measured During Each Conversion Cycle ADC Operation In Addition to the 3 ADC Digital Filters, There Is a 4th Filter Which Is Used for Redundancy Checks That All Digital Filters are Free of Faults ADC Conversion with Digital Redundancy for a description and PS[1:0] bits in Table 10 Measure Cell 7 with ADC1 and ADC2 Simultaneously and then Measure Cell 13 with ADC2 and ADC3 Simultaneously Using the ADOL Command Checks That ADC2 Is as Accurate as ADC1 and Also Checks That ADC3 Is as Accurate as ADC2 Overlap Cell Measurement (ADOL Command) A Monitoring Feature Can Be Enabled During the Discharge Timer. The Cell Balancing Can Be Automatically Terminated When Cell Voltages Reach a Programmable Undervoltage Threshold Improved Cell Balancing Discharge Timer Monitor The Internal Discharge MOSFETs Can Provide 200mA of Balancing Current (80mA if the die temperature is over 95°C). The Balancing Current Is Independent of Cell Voltage Faster Cell Balancing, Especially for Low Cell Voltages Cell Balancing with Internal MOSFETs The C0 Pin Voltage Is Allowed to Range Between 0V and 1V Without Affecting Total Measurement Error (TME) C0 Does Not Have to Connect Directly to V– Input Range in Electrical Characteristics The MUTE and UNMUTE Commands Allow the Host to Turn Off/On the Discharge Pins (S Pins) Without Overwriting Register Values Greater Control of Timing Between S Pins Turning Off and Cell Measurements S Pin Muting Auxiliary Measurements Have an Open-Wire Diagnostic Feature Improved Fault Detection Auxiliary Open Wire Check (AXOW Command) Four Additional GPIO Pins Have Been Added for a Total of Nine Increased Number of Temperature or Other Sensors That Can Be Measured Auxiliary (GPIO) Measurements (ADAX Command) and Auxiliary Open Wire Check (AXOW Command) A Daisy Chain of LTC6813-1s Can Operate in Both Directions (Both Ports Can Be Master or Slave) Redundant Communication Path Reversible isoSPI Rev. B For more information www.analog.com 17 LTC6813-1 OPERATION STATE DIAGRAM The operation of the LTC6813-1 is divided into two separate sections: the Core circuit and the isoSPI circuit. Both sections have an independent set of operating states, as well as a shutdown timeout. pauses for tREFUP to allow for the references to power up and then enters either the REFUP or MEASURE state. Otherwise, if no valid commands are received for tSLEEP, the IC returns to the SLEEP state if DTEN = 0 or enters the EXTENDED BALANCING state if DTEN = 1. REFUP State CORE LTC6813-1 STATE DESCRIPTIONS SLEEP State The references and ADCs are powered down. The watchdog timer (see Watchdog and Discharge Timer) has timed out. The discharge timer is either disabled or timed out. The supply currents are reduced to minimum levels. The isoSPI ports will be in the IDLE state. The DRIVE pin is 0V. All state machines are reset to their default states. If a WAKE-UP signal is received (see Waking Up the Serial Interface), the LTC6813-1 will enter the STANDBY state. STANDBY State The references and the ADCs are off. The watchdog timer and/or the discharge timer is running. The DRIVE pin powers the VREG pin to 5V through an external transistor. (Alternatively, VREG can be powered by an external supply). When a valid ADC command is received or the REFON bit is set to 1 in Configuration Register Group A, the IC To reach this state, the REFON bit in Configuration Register Group A must be set to 1 (using the WRCFGA command, see Table 36). The ADCs are off. The references are powered up so that the LTC6813-1 can initiate ADC conversions more quickly than from the STANDBY state. When a valid ADC command is received, the IC goes to the MEASURE state to begin the conversion. Otherwise, the LTC6813-1 will return to the STANDBY state when the REFON bit is set to 0 (using WRCFGA command). If no valid commands are received for tSLEEP, the IC returns to the SLEEP state if DTEN = 0 or enters the EXTENDED BALANCING state if DTEN = 1. MEASURE State The LTC6813-1 performs ADC conversions in this state. The references and ADCs are powered up. After ADC conversions are complete, the LTC6813-1 will transition to either the REFUP or STANDBY state, depending on the REFON bit. Additional ADC conversions can be CORE LTC6813-1 isoSPI PORT SLEEP IDLE WD TIMEOUT AND DTEN = 0 (tSLEEP) WAKE-UP SIGNAL (tWAKE) DCTO REACHES 0 WD TIMEOUT WD TIMEOUT AND DTEN = 1 AND DTEN = 0 EXTENDED STANDBY (tSLEEP) BALANCING WAKE-UP REFON = 0 SIGNAL (tWAKE) REFON = 1 (tREFUP) ADC EVERY 30s COMM AND DTMEN=1 REFUP (tREFUP) ADC WAKE-UP COMMAND SIGNAL CONV CONV DONE (tWAKE) DONE (REFON = 0) WD TIMEOUT AND DTEN = 1 CONV DONE (REFON = 1) MEASURE IDLE TIMEOUT (tIDLE) WAKE-UP SIGNAL (CORE = SLEEP) (tWAKE) WAKE-UP SIGNAL (CORE = STANDBY) (tREADY) READY NO ACTIVITY ON isoSPI PORT DTM MEASURE TRANSMIT/RECEIVE ACTIVE NOTE: STATE TRANSITION DELAYS DENOTED BY (tX) 68131 F01 Figure 1. LTC6813-1 Operation State Diagram 18 Rev. B For more information www.analog.com LTC6813-1 OPERATION initiated more quickly by setting REFON = 1 to take advantage of the REFUP state. Note: Non-ADC commands do not cause a Core state transition. Only an ADC Conversion or diagnostic commands will place the Core in the MEASURE state. EXTENDED BALANCING State The watchdog timer has timed out, but the discharge timer has not yet timed out (DTEN = 1). Discharge by PWM may be in progress. If the Discharge Timer Monitor is enabled then the LTC6813-1 will transition to the DTM MEASURE state every 30 seconds to measure the cell voltages. If a WAKE-UP signal is received, the LTC6813-1 will transition from EXTENDED BALANCING state to STANDBY state. Discharge Timer Monitor MEASURE State The watchdog timer has timed out but background monitoring has been enabled (DTMEN = 1 in Configuration Register Group B). The LTC6813-1 enters this state from the EXTENDED BALANCING state once every 30 seconds to measure the cell voltages. The LTC6813-1 is in the highest core power state and an A/D conversion is in progress. If a WAKE-UP signal is received, the LTC6813-1 will transition from DTM MEASURE state to STANDBY state. isoSPI STATE DESCRIPTIONS Note: The LTC6813-1 has two isoSPI ports (A and B), for daisy-chain communication. IDLE State The isoSPI ports are powered down. When isoSPI Port A or Port B receives a WAKE-UP signal (see Waking Up the Serial Interface), the isoSPI enters the READY state. This transition happens quickly (within tREADY) if the Core is in the STANDBY state. If the Core is in the SLEEP state when the isoSPI receives a WAKE-UP signal, then it transitions to the READY state within tWAKE. READY State The isoSPI port(s) are ready for communication. The serial interface current in this state depends on the status of the ISOMD pin and RBIAS = RB1 + RB2 (the external resistors tied to the IBIAS pin). If there is no activity (i.e., no WAKE-UP signal) on Port A or Port B for greater than tIDLE, the LTC6813-1 goes to the IDLE state. When the serial interface is transmitting or receiving data, the LTC6813-1 goes to the ACTIVE state. ACTIVE State The LTC6813-1 is transmitting/receiving data using one or both of the isoSPI ports. The serial interface consumes maximum power in this state. The supply current increases with clock frequency as the density of isoSPI pulses increases. POWER CONSUMPTION The LTC6813-1 is powered via two pins: V+ and VREG. The V+ input requires voltage greater than or equal to the top cell voltage minus 0.3V, and it provides power to the high voltage elements of the Core circuits. The VREG input requires 5V and provides power to the remaining Core circuits and the isoSPI circuitry. The VREG input can be powered through an external transistor, driven by the regulated DRIVE output pin. Alternatively, VREG can be powered by an external supply. The power consumption varies according to the operational states. Table 1 and Table 2 provide equations to approximate the supply pin currents in each state. The V+ pin current depends only on the Core state. However, the VREG pin current depends on both the Core state and isoSPI state, and can, therefore, be divided into two components. The isoSPI interface draws current only from the VREG pin. IREG = IREG(CORE) + IREG(isoSPI) In the SLEEP state, the VREG pin will draw approximately 3.1μA if powered by an external supply. Otherwise, the V+ pin will supply the necessary current. Rev. B For more information www.analog.com 19 LTC6813-1 OPERATION Table 1. Core Supply Current STATE IVP IREG(CORE) VREG = 0V 6.1µA 0µA VREG = 5V 3µA 3.1µA 14µA 35µA REFUP 550µA 900µA MEASURE 950µA 15mA SLEEP STANDBY Table 2. isoSPI Supply Current Equations isoSPI STATE ISOMD CONNECTION IREG(isoSPI) IDLE N/A 0mA VREG 2.2mA + 3 • IB V– 1.5mA + 3 • IB READY VREG ACTIVE V– ⎛ 100ns ⎞ •IB Write: 2.5mA + ⎜ 3 + 20 • t CLK ⎟⎠ ⎝ ⎛ 100ns • 1.5 ⎞ •IB Read: 2.5mA + ⎜ 3 + 20 • t CLK ⎟⎠ ⎝ ⎛ 100ns ⎞ •IB 1.8mA + ⎜ 3 + 20 • t CLK ⎟⎠ ⎝ ADC OPERATION There are three ADCs inside the LTC6813-1. The three ADCs operate simultaneously when measuring eighteen cells. Only one ADC is used to measure the general purpose inputs. The following discussion uses the term ADC to refer to one or all ADCs, depending on the operation being performed. The following discussion will refer to ADC1, ADC2 and ADC3 when it is necessary to distinguish between the three circuits, in timing diagrams, for example. ADC Modes The ADCOPT bit (CFGAR0[0]) in Configuration Register Group A and the mode selection bits MD[1:0] in the conversion command together provide eight modes of operation for the ADC which correspond to different 20 oversampling ratios (OSR). The accuracy and timing of these modes are summarized in Table 3. In each mode, the ADC first measures the inputs, and then performs a calibration of each channel. The names of the modes are based on the –3dB bandwidth of the ADC measurement. Mode 7kHz (Normal): In this mode, the ADC has high resolution and low TME (Total Measurement Error). This is considered the normal operating mode because of the optimum combination of speed and accuracy. Mode 27kHz (Fast): In this mode, the ADC has maximum throughput but has some increase in TME (Total Measurement Error). So this mode is also referred to as the fast mode. The increase in speed comes from a reduction in the oversampling ratio. This results in an increase in noise and average measurement error. Mode 26Hz (Filtered): In this mode, the ADC digital filter –3dB frequency is lowered to 26Hz by increasing the OSR. This mode is also referred to as the filtered mode due to its low –3dB frequency. The accuracy is similar to the 7kHz (Normal) mode with lower noise. Modes 14kHz, 3kHz, 2kHz, 1kHz and 422Hz: Modes 14kHz, 3kHz, 2kHz, 1kHz and 422Hz provide additional options to set the ADC digital filter –3dB at 13.5kHz, 3.4kHz, 1.7kHz, 845Hz and 422Hz, respectively. The accuracy of the 14kHz mode is similar to the 27kHz (Fast) mode. The accuracy of 3kHz, 2kHz, 1kHz and 422Hz modes is similar to the 7kHz (Normal) mode. The filter bandwidths and the conversion times for these modes are provided in Table 3 and Table 5. If the Core is in STANDBY state, an additional tREFUP time is required to power up the reference before beginning the ADC conversions. The reference can remain powered up between ADC conversions if the REFON bit in Configuration Register Group A is set to 1 so the Core is in REFUP state after a delay tREFUP. Then, the subsequent ADC commands will not have the tREFUP delay before beginning ADC conversions. Rev. B For more information www.analog.com LTC6813-1 OPERATION Table 3. ADC Filter Bandwidth and Accuracy 1.0 –40dB FILTER BW TME SPEC AT 3.3V, 25°C TME SPEC AT 3.3V, –40°C, 125°C 27kHz (Fast Mode) 27kHz 84kHz ±6mV ±6mV 14kHz 13.5kHz 42kHz ±6mV ±6mV 7kHz (Normal Mode) 6.8kHz 21kHz ±2.2mV ±3.3mV 3kHz 3.4kHz 10.5kHz ±2.2mV ±3.3mV 2kHz 1.7kHz 5.3kHz ±2.2mV ±3.3mV 1kHz 845Hz 2.6kHz ±2.2mV ±3.3mV 422Hz 422Hz 1.3kHz ±2.2mV ±3.3mV 26Hz (Filtered Mode) 26Hz 82Hz ±2.2mV ±3.3mV MODE NORMAL MODE FILTERED MODE 0.9 0.8 PEAK NOISE (mV) –3dB FILTER BW 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 ADC INPUT VOLTAGE (V) 5 68131 F02 Figure 2. Measurement Noise vs Input Voltage Note: TME is the Total Measurement Error. ADC Range and Resolution The C inputs and GPIO inputs have the same range and resolution. The ADC inside the LTC6813-1 has an approximate range from –0.82V to +5.73V. Negative readings are rounded to 0V. The format of the data is a 16-bit unsigned integer where the LSB represents 100μV. Therefore, a reading of 0x80E8 (33,000 decimal) indicates a measurement of 3.3V. Delta-Sigma ADCs have quantization noise which depends on the input voltage, especially at low oversampling ratios (OSR), such as in FAST mode. In some of the ADC modes, the quantization noise increases as the input voltage approaches the upper and lower limits of the ADC range. For example, the total measurement noise versus input voltage in normal and filtered modes is shown in Figure 2. The specified range of the ADC is 0V to 5V. In Table 4, the precision range of the ADC is arbitrarily defined as 0.5V to 4.5V. This is the range where the quantization noise is relatively constant even in the lower OSR modes (see Figure 2). Table 4 summarizes the total noise in this range for all eight ADC operating modes. Also shown is the noise free resolution. For example, 14-bit noise free resolution in normal mode implies that the top 14 bits will be noise free with a DC input, but that the 15th and 16th Least Significant Bits (LSB) will flicker. ADC Range vs Voltage Reference Value Typical ADCs have a range which is exactly twice the value of the voltage reference, and the ADC measurement error is directly proportional to the error in the voltage reference. The LTC6813-1 ADC is not typical. The absolute value of VREF1 is trimmed up or down to compensate for gain errors in the ADC. Therefore, the ADC Total Measurement Error (TME) specifications are superior to the VREF1 specifications. For example, the 25°C specification of the Total Measurement Error when measuring 3.300V in 7kHz (Normal) mode is ±2.2mV and the 25°C specification for VREF1 is 3.150V ± 150mV. Rev. B For more information www.analog.com 21 LTC6813-1 OPERATION Measuring Cell Voltages (ADCV Command) The ADCV command initiates the measurement of the battery cell inputs, pins C0 through C18. This command has options to select the number of channels to measure and the ADC mode. See the section on Commands for the ADCV command format. Figure  3 illustrates the timing of the ADCV command which measures all eighteen cells. After the receipt of the ADCV command to measure all 18 cells, ADC1 sequentially measures the bottom 6 cells. ADC2 measures the middle 6 cells and ADC3 measures the top 6 cells. After the cell measurements are complete, each channel is calibrated to remove any offset errors. Table 5 shows the conversion times for the ADCV command measuring all 18 cells. The total conversion time is given by t6C which indicates the end of the calibration step. Figure 4 illustrates the timing of the ADCV command that measures only three cells. Table 4. ADC Range and Resolution FULL RANGE1 SPECIFIED RANGE PRECISION RANGE2 MAX NOISE NOISE FREE RESOLUTION3 27kHz (Fast) ±4mVP-P 10 Bits 14kHz ±1mVP-P 12 Bits 7kHz (Normal) ±250μVP-P 14 Bits 3kHz ±150μVP-P 14 Bits MODE –0.8192V to 5.7344V 0V to 5V 0.5V to 4.5V LSB 100μV FORMAT Unsigned 16 Bits ±100μVP-P 15 Bits 1kHz ±100μVP-P 15 Bits 422Hz ±100μVP-P 15 Bits 26Hz (Filtered) ±50μVP-P 16 Bits 2kHz 1. Negative readings are rounded to 0V. 2. PRECISION RANGE is the range over which the noise is less than MAX NOISE. 3. NOISE FREE RESOLUTION is a measure of the noise level within the PRECISION RANGE. 22 Rev. B For more information www.analog.com LTC6813-1 OPERATION tCYCLE tSKEW2 tREFUP SERIAL INTERFACE ADCV + PEC ADC3 MEASURE C13 TO C12 MEASURE C14 TO C13 MEASURE C18 TO C17 CALIBRATE ADC2 MEASURE C7 TO C6 MEASURE C8 TO C7 MEASURE C12 TO C11 CALIBRATE ADC1 MEASURE C1 TO C0 MEASURE C2 TO C1 MEASURE C6 TO C5 CALIBRATE t1M t0 t2M t5M t6M t6C 68131 F03 Figure 3. Timing for ADCV Command Measuring All 18 Cells Table 5. Conversion and Synchronization Times for ADCV Command Measuring All 18 Cells in Different Modes CONVERSION TIMES (IN μs) SYNCHRONIZATION TIME (IN μs) MODE t0 t1M t2M t5M t6M t6C tSKEW2 27kHz 0 58 104 244 291 1,121 233 14kHz 0 87 163 390 466 1,296 379 7kHz 0 145 279 681 815 2,343 670 3kHz 0 261 512 1,263 1,513 3,041 1,252 2kHz 0 494 977 2,426 2,909 4,437 2,415 1kHz 0 960 1,908 4,753 5,702 7,230 4,742 422Hz 0 1,890 3,770 9,408 11,287 12,816 9,397 26Hz 0 29,818 59,624 149,044 178,851 201,325 149,033 tREFUP SERIAL INTERFACE ADCV + PEC ADC3 MEASURE C16 TO C15 CALIBRATE ADC2 MEASURE C10 TO C9 CALIBRATE ADC1 MEASURE C4 TO C3 CALIBRATE t0 t1M t1C 68131 F04 Figure 4. Timing for ADCV Command Measuring 3 Cells Rev. B For more information www.analog.com 23 LTC6813-1 OPERATION Table 6 shows the conversion time for the ADCV command measuring only 3 cells. t1C indicates the total conversion time for this command. Table 6. Conversion Times for ADCV Command Measuring 3 Cells in Different Modes CONVERSION TIMES (IN μs) MODE t0 t1M 27kHz 0 58 203 14kHz 0 87 232 t1C 7kHz 0 145 407 3kHz 0 261 523 2kHz 0 494 756 1kHz 0 960 1,221 422Hz 0 1,890 2,152 26Hz 0 29,818 33,570 Under/Over Voltage Monitoring Whenever the C inputs are measured, the results are compared to undervoltage and overvoltage thresholds stored in memory. If the reading of a cell is above the overvoltage limit, a bit in memory is set as a flag. Similarly, measurement results below the undervoltage limit cause a flag to be set. The overvoltage and undervoltage thresholds are stored in Configuration Register Group A. The flags are stored in Status Register Group B and Auxiliary Register Group D. Auxiliary (GPIO) Measurements (ADAX Command) The ADAX command initiates the measurement of the GPIO inputs. This command has options to select which GPIO input to measure (GPIO1–9) and which ADC mode to use. The ADAX command also measures the 2nd reference. There are options in the ADAX command to measure subsets of the GPIOs and the 2nd reference separately or to measure all nine GPIOs and the 2nd reference in a single command. See the section on Commands for the ADAX command format. All auxiliary measurements are relative to the V– pin voltage. This command can be used to read external temperatures by connecting temperature sensors to the GPIOs. These sensors can be powered from the 2nd reference which is also measured by the ADAX command, resulting in precise ratiometric measurements. Figure 5 illustrates the timing of the ADAX command measuring all GPIOs and the 2nd reference. All 10 measurements are carried out on ADC1 alone. The 2nd reference is measured after GPIO5 and before GPIO6. Table 7 shows the conversion time for the ADAX command measuring all of the GPIOs and the 2nd reference. t10C indicates the total conversion time. tCYCLE tSKEW tREFUP SERIAL INTERFACE ADAX + PEC ADC3 ADC2 MEASURE GPIO1 ADC1 t0 MEASURE GPIO2 t1M MEASURE GPIO5 t2M t4M MEASURE 2ND REF t5M MEASURE GPIO6 t6M MEASURE GPIO9 t7M t9M CALIBRATE t10M t10C 68131 F05 Figure 5. Timing for ADAX Command Measuring All GPIOs and 2nd Reference 24 Rev. B For more information www.analog.com LTC6813-1 OPERATION Table 7. Conversion and Synchronization Times for ADAX Command Measuring All GPIOs and 2nd Reference in Different Modes CONVERSION TIMES (IN μs) MODE t0 t1M t2M SYNCHRONIZATION TIME (IN μs) t9M t10M t10C tSKEW 27kHz 0 58 104 431 478 1,825 420 14kHz 0 87 163 693 769 2,116 682 7kHz 0 145 279 1,217 1,350 3,862 1,205 3kHz 0 261 512 2,264 2,514 5,025 2,253 2kHz 0 494 977 4,358 4,841 7,353 4,347 1kHz 0 960 1,908 8,547 9,496 12,007 8,536 422Hz 0 1,890 3,770 16,926 18,805 21,316 16,915 26Hz 0 29,818 59,624 268,271 298,078 335,498 268,260 Auxiliary (GPIO) Measurements with Digital Redundancy (ADAXD Command) Measuring Cell Voltages and GPIOs (ADCVAX Command) The ADAXD command operates similarly to the ADAX command except that an additional diagnostic is performed using digital redundancy. PS[1:0] in Configuration Register Group B must be set to 0 or 1 during ADAXD to enable redundancy. See the ADC Conversion with Digital Redundancy section. The ADCVAX command combines eighteen cell measurements with two GPIO measurements (GPIO1 and GPIO2). This command simplifies the synchronization of battery cell voltage and current measurements when current sensors are connected to GPIO1 or GPIO2 inputs. Figure 6 illustrates the timing of the ADCVAX command. See the section on Commands for the ADCVAX command format. The synchronization of the current and voltage measurements, tSKEW1, in Fast mode is within 194μs. The execution time of ADAX and ADAXD is the same. Table 8 shows the conversion and synchronization time for the ADCVAX command in different modes. The total conversion time for the command is given by t8C. SERIAL INTERFACE tCYCLE tSKEW1 tREFUP tSKEW1 ADCVAX + PEC ADC3 MEASURE C13 TO C12 MEASURE C14 TO C13 MEASURE C15 TO C14 MEASURE C16 TO C15 MEASURE C17 TO C16 MEASURE C18 TO C17 CALIBRATE ADC2 MEASURE C7 TO C6 MEASURE C8 TO C7 MEASURE C9 TO C8 MEASURE C10 TO C9 MEASURE C11 TO C10 MEASURE C12 TO C11 CALIBRATE ADC1 MEASURE C1 TO C0 MEASURE C2 TO C1 MEASURE C3 TO C2 MEASURE C4 TO C3 MEASURE C5 TO C4 MEASURE C6 TO C5 CALIBRATE t0 t1M t2M MEASURE GPIO1 t3M MEASURE GPIO2 t4M t5M t6M t7M t8M t8C 68131 F06 Figure 6. Timing of ADCVAX Command Rev. B For more information www.analog.com 25 LTC6813-1 OPERATION Table 8. Conversion and Synchronization Times for ADCVAX Command in Different Modes CONVERSION TIMES (IN μs) MODE t0 t1M t2M t3M t4M t5M SYNCHRONIZATION TIME (IN μs) t6M t7M t8M t8C tSKEW1 27kHz 0 58 104 151 205 252 306 352 399 1,511 194 14kHz 0 87 163 238 321 397 480 556 632 1,744 310 7kHz 0 145 279 413 554 688 829 963 1,097 3,140 543 3kHz 0 261 512 762 1,020 1,270 1,527 1,778 2,028 4,071 1,008 2kHz 0 494 977 1,460 1,950 2,433 2,924 3,407 3,890 5,933 1,939 1kHz 0 960 1,908 2,857 3,812 4,761 5,717 6,665 7,613 9,657 3,801 422Hz 0 1,890 3,770 5,649 7,536 9,415 11,302 13,181 15,061 17,104 7,525 26Hz 0 29,818 59,624 89,431 119,245 149,052 178,866 208,672 238,479 268,450 DATA ACQUISITION SYSTEM DIAGNOSTICS The battery monitoring data acquisition system is comprised of the multiplexers, ADCs, 1st reference, digital filters and memory. To ensure long term reliable performance there are several diagnostic commands which can be used to verify the proper operation of these circuits. Measuring Internal Device Parameters (ADSTAT Command) The ADSTAT command is a diagnostic command that measures the following internal device parameters: Sum of All Cells (SC), Internal Die Temperature (ITMP), Analog Power Supply (VA) and the Digital Power Supply (VD). These parameters are described in the section below. All the 8 ADC modes described earlier are available for these conversions. See the section on Commands for the ADSTAT command format. Figure 7 illustrates the timing of the ADSTAT command measuring all 4 internal device parameters. Table 9 shows the conversion time of the ADSTAT command measuring all 4 internal parameters. t4C indicates the total conversion time for the ADSTAT command. tSKEW tREFUP SERIAL INTERFACE 119,234 tCYCLE ADSTAT + PEC ADC3 ADC2 MEASURE SC ADC1 t0 MEASURE ITMP t1M MEASURE VD t2M t3M CALIBRATE SC t4M CALIBRATE ITMP t1C CALIBRATE VD t2C t3C t4C 68131 F07 Figure 7. Timing for ADSTAT Command Measuring SC, ITMP, VA, VD 26 Rev. B For more information www.analog.com LTC6813-1 OPERATION Table 9. Conversion and Synchronization Times for ADSTAT Command Measuring SC, ITMP, VA, VD in Different Modes CONVERSION TIMES (IN μs) MODE t0 t1M t2M t3M t4M t4C tSKEW 27kHz 0 58 104 151 198 742 140 14kHz 0 87 163 238 314 858 227 7kHz 0 145 279 413 547 1,556 402 3kHz 0 261 512 762 1,012 2,022 751 2kHz 0 494 977 1,460 1,943 2,953 1,449 1kHz 0 960 1,908 2,857 3,805 4,814 2,845 422Hz 0 1,890 3,770 5,649 7,529 8,538 5,638 26Hz 0 29,818 59,624 89,431 119,238 134,211 89,420 Sum of All Cells Measurement: The Sum of All Cells measurement is the voltage between C18 and C0 with a 30:1 attenuation. The 16-bit ADC value of Sum of All Cells measurement (SC) is stored in Status Register Group A. Any potential difference between the C0 and V– pins results in an error in the SC measurement equal to this difference. From the SC value, the sum of all cell voltage measurements is given by: Sum of All Cells = SC • 30 • 100µV Internal Die Temperature: The ADSTAT command can measure the internal die temperature. The 16-bit ADC value of the die temperature measurement (ITMP) is stored in Status Register Group A. From ITMP, the actual die temperature is calculated using the expression: Internal Die Temperature (°C) = SYNCHRONIZATION TIME (IN μs) ITMP • The value of VREG is determined by external components. VREG should be between 4.5V and 5.5V to maintain accuracy. The value of VREGD is determined by internal components. The normal range of VREGD is 2.7V to 3.6V. Measuring Internal Device Parameters with Digital Redundancy (ADSTATD Command) The ADSTATD command operates similarly to the ADSTAT command except that an additional diagnostic is performed using digital redundancy. PS[1:0] in Configuration Register Group B must be set to 0 or 1 during ADSTATD to enable redundancy. See the ADC Conversion with Digital Redundancy section. The execution time of ADSTAT and ADSTATD is the same. ADC Conversion with Digital Redundancy 100 µV °C – 276°C 7.6mV Power Supply Measurements: The ADSTAT command is also used to measure the Analog Power Supply (VREG) and Digital Power Supply (VREGD). The 16-bit ADC value of the analog power supply measurement (VA) is stored in Status Register Group A. The 16-bit ADC value of the digital power supply measurement (VD) is stored in Status Register Group B. From VA and VD, the power supply measurements are given by: Analog Power Supply Measurement (VREG) = VA • 100µV Digital Power Supply Measurement (VREGD) = VD • 100µV Each of the three internal ADCs contains its own digital integration and differentiation machine. The LTC6813-1 also contains a fourth digital integration and differentiation machine that is used for redundancy and error checking. All of the ADC and self test commands, except ADAX and ADSTAT, can operate with digital redundancy. This includes ADCV, ADOW, CVST, ADOL, ADAXD, AXOW, AXST, ADSTATD, STATST, ADCVAX and ADCVSC. When performing an ADC conversion with redundancy, the analog modulator sends its bit stream to both the primary digital machine and the redundant digital machine. At the end of the conversion the results from the two machines are compared. If any result bit mismatch is detected then a digital redundancy fault code is stored in place of the For more information www.analog.com Rev. B 27 LTC6813-1 OPERATION ADC result. The digital redundancy fault code is a value of 0xFF0X. This is detectable because it falls outside the normal result range of 0x0000 to 0xDFFF. The last four bits are used to indicate which nibble(s) of the result values did not match. selection by writing to the PS[1:0] bits in Configuration Register Group B. Table  10 shows all possible ADC path redundancy selections. When the FDRF bit in Configuration Register Group B is written to 1 it will force the digital redundancy comparison to fail during subsequent ADC conversions. Indication of Digital Redundancy Fault Codes DIGITAL REDUNDANCY FAULT CODE 4 LSBs INDICATION 0b0XXX No fault detected in bits 15–12 0b1XXX Fault detected in bits 15–12 0bX0XX No fault detected in bits 11–8 0bX1XX Fault detected in bits 11–8 0bXX0X No fault detected in bits 7–4 0bXX1X Fault detected in bits 7–4 0bXXX0 No fault detected in bits 3–0 0bXXX1 Fault detected in bits 3–0 0b0000 The digital redundancy feature will not write this value of all zeros in the last 4 bits Measuring Cell Voltages and Sum of All Cells (ADCVSC Command) The ADCVSC command combines eighteen cell measurements and the measurement of Sum of All Cells. This command simplifies the synchronization of the individual battery cell voltage and the total Sum of All Cells measurements. Figure 8 illustrates the timing of the ADCVSC command. See the section on Commands for the ADCVSC command format. The synchronization of the cell voltage and Sum of All Cells measurements, tSKEW, in Fast mode is within 147μs. Since there is a single redundant digital machine, it can apply redundancy to only one ADC at a time. By default, the LTC6813-1 will automatically select ADC path redundancy. However, the user can choose an ADC redundancy path Table 11 shows the conversion and synchronization time for the ADCVSC command in different modes. The total conversion time for the command is given by t7C. Table 10. ADC Path Redundancy Selection PS[1:0] = 00 MEASURE Cells 1, 7, 13 PS[1:0] = 01 PS[1:0] = 10 PS[1:0] = 11 PATH SELECT REDUNDANT MEASURE PATH SELECT REDUNDANT MEASURE PATH SELECT REDUNDANT MEASURE PATH SELECT REDUNDANT MEASURE ADC1 Cell 1 ADC1 Cell 1 ADC2 Cell 7 ADC3 Cell 13 Cells 2, 8, 14 ADC2 Cell 8 ADC1 Cell 2 ADC2 Cell 8 ADC3 Cell 14 Cells 3, 9, 15 ADC3 Cell 15 ADC1 Cell 3 ADC2 Cell 9 ADC3 Cell 15 Cells 4, 10, 16 ADC1 Cell 4 ADC1 Cell 4 ADC2 Cell 10 ADC3 Cell 16 Cells 5, 11, 17 ADC2 Cell 11 ADC1 Cell 5 ADC2 Cell 11 ADC3 Cell 17 Cells 6, 12, 18 ADC3 Cell 18 ADC1 Cell 6 ADC2 Cell 12 ADC3 Cell 18 Cell 7 (ADOL) ADC2 Cell 7 ADC1 Cell 7 ADC2 Cell 7 ADC3 N/A Cell 13 (ADOL) ADC2 Cell 13 ADC1 N/A ADC2 Cell 13 ADC3 Cell 13 GPIO[n]* ADC1 GPIO[n] ADC1 GPIO[n] ADC2 N/A ADC3 N/A 2nd Reference* ADC1 2nd Ref ADC1 2nd Ref ADC2 N/A ADC3 N/A SC* ADC1 SC ADC1 SC ADC2 N/A ADC3 N/A ITMP* ADC1 ITMP ADC1 ITMP ADC2 N/A ADC3 N/A VA* ADC1 VA ADC1 VA ADC2 N/A ADC3 N/A VD* ADC1 VD ADC1 VD ADC2 N/A ADC3 N/A *Note that the ADAX and ADSTAT commands are identical to the ADAXD and ADSTATD commands except that ADAX and ADSTAT will not apply any digital redundancy. 28 Rev. B For more information www.analog.com LTC6813-1 OPERATION tCYCLE tREFUP SERIAL INTERFACE tSKEW tSKEW ADCVSC + PEC ADC3 MEASURE C13 TO C12 MEASURE C14 TO C13 MEASURE C15 TO C14 MEASURE C16 TO C15 MEASURE C17 TO C16 MEASURE C18 TO C17 CALIBRATE ADC2 MEASURE C7 TO C6 MEASURE C8 TO C7 MEASURE C9 TO C8 MEASURE C10 TO C9 MEASURE C11 TO C10 MEASURE C12 TO C11 CALIBRATE ADC1 MEASURE C1 TO C0 MEASURE C2 TO C1 MEASURE C3 TO C2 MEASURE C4 TO C3 MEASURE C5 TO C4 MEASURE C6 TO C5 CALIBRATE t1M t0 t2M MEASURE SC t3M t4M t5M t6M t7M t7C 68131 F08 Figure 8. Timing for ADCVSC Command Measuring All 18 Cells, SC Table 11. Conversion and Synchronization Times for ADCVSC Command in Different Modes SYNCHRONIZATION TIME (IN μs) CONVERSION TIMES (IN μs) MODE t0 t1M t2M t3M t4M t5M t6M t7M t7C tSKEW 27kHz 0 58 104 151 205 259 306 352 1,331 147 14kHz 0 87 163 238 321 404 480 556 1,534 235 7kHz 0 145 279 413 554 695 829 963 2,756 409 3kHz 0 261 512 762 1,020 1,277 1,527 1,778 3,571 758 2kHz 0 494 977 1,460 1,950 2,441 2,924 3,407 5,200 1,456 1kHz 0 960 1,908 2,857 3,812 4,768 5,717 6,665 8,458 2,853 422Hz 0 1,890 3,770 5,649 7,536 9,423 11,302 13,181 14,974 5,645 26Hz 0 29,818 59,624 89,431 119,245 149,059 178,866 208,672 234,902 89,427 Rev. B For more information www.analog.com 29 LTC6813-1 OPERATION Table 12 shows the conversion time for the ADOL command. t2C indicates the total conversion time for this command. Overlap Cell Measurement (ADOL Command) The ADOL command first simultaneously measures Cell 7 with ADC1 and ADC2. Then it simultaneously measures Cell 13 with both ADC2 and ADC3. The host can compare the results against each other to look for inconsistencies which may indicate a fault. The result of the Cell 7 measurement from ADC2 is placed in Cell Voltage Register Group C where the Cell 7 result normally resides. The result from ADC1 is placed in Cell Voltage Register Group C where the Cell 8 result normally resides. The result of the Cell 13 measurement from ADC3 is placed in Cell Voltage Register Group E where the Cell 13 result normally resides. The result from ADC2 is placed in Cell Voltage Register Group E where the Cell 14 result normally resides. Figure 9 illustrates the timing of the ADOL command. See the section on Commands for the ADOL command format. Accuracy Check Measuring an independent voltage reference is the best means to verify the accuracy of a data acquisition system. The LTC6813-1 contains a 2nd reference for this purpose. The ADAX command will initiate the measurement of the 2nd reference. The results are placed in Auxiliary Register Group B. The range of the result depends on the ADC1 measurement accuracy and the accuracy of the 2nd reference, including thermal hysteresis and long term drift. Readings outside the range 2.990V to 3.014V (2.992V to 3.012V for LTC6813I) indicate the system is out of its specified tolerance. ADC2 is verified by comparing it to ADC1 using the ADOL command. ADC3 is verified by comparing it to ADC2 using the ADOL command. tREFUP SERIAL INTERFACE ADOL + PEC MEASURE C13TO C12 ADC3 ADC2 MEASURE C7 TO C6 ADC1 MEASURE C7 TO C6 t0 CALIBRATE C13 TO C12 MEASURE C13 TO C12 CALIBRATE C7 TO C6 CALIBRATE C13 TO C12 CALIBRATE C7 TO C6 t1M t2M t1C t2C 68131 F09 Figure 9. Timing for ADOL Command Table 12. Conversion Times for ADOL Command CONVERSION TIMES (IN μs) MODE 30 t0 t1M t2M t2C 27kHz 0 58 106 384 14kHz 0 87 164 442 7kHz 0 146 281 791 3kHz 0 262 513 1,024 2kHz 0 495 979 1,490 1kHz 0 960 1,910 2,420 422Hz 0 1,891 3,772 4,282 26Hz 0 29,818 59,626 67,119 Rev. B For more information www.analog.com LTC6813-1 OPERATION This is why a delta-sigma ADC is often referred to as an oversampling converter. MUX Decoder Check The diagnostic command DIAGN ensures the proper operation of each multiplexer channel. The command cycles through all channels and sets the MUXFAIL bit to 1 in Status Register Group B if any channel decoder fails. The MUXFAIL bit is set to 0 if the channel decoder passes the test. The MUXFAIL is also set to 1 on power-up (POR) or after a CLRSTAT command. The self test commands verify the operation of the digital filters and memory. Figure 10 illustrates the operation of the ADC during self test. The output of the 1-bit pulse density modulator is replaced by a 1-bit test signal. The test signal passes through the digital filter and is converted to a 16-bit value. The 1-bit test signal undergoes the same digital conversion as the regular 1-bit signal from the modulator, so the conversion time for any self test command is exactly the same as the corresponding regular ADC conversion command. The 16-bit ADC value is stored in the same register groups as the corresponding regular ADC conversion command. The test signals are designed to place alternating one-zero patterns in the registers. Table 13 provides a list of the self test commands. If the digital filters and memory are working properly, then the registers will contain the values shown in Table 13. For more details see the Commands section. The DIAGN command takes about 400μs to complete if the Core is in REFUP state and about 4.5ms to complete if the Core is in STANDBY state. The polling methods described in the section Polling Methods can be used to determine the completion of the DIAGN command. Digital Filter Check The delta-sigma ADC is composed of a 1-bit pulse density modulator followed by a digital filter. A pulse density modulated bit stream has a higher percentage of 1s for higher analog input voltages. The digital filter converts this high frequency 1-bit stream into a single 16-bit word. PULSE DENSITY MODULATED BIT STREAM MUX ANALOG INPUT 1-BIT MODULATOR DIGITAL FILTER 1 SELF TEST PATTERN GENERATOR 16 RESULTS REGISTER TEST SIGNAL 68131 F10 Figure 10. Operation of LTC6813-1 ADC Self Test Table 13. Self Test Command Summary OUTPUT PATTERN IN DIFFERENT ADC MODES COMMAND CVST AXST STATST SELF TEST OPTION 27kHz 14kHz 7kHz, 3kHz, 2kHz, 1kHz, 422Hz, 26Hz ST[1:0] = 01 0x9565 0x9553 0x9555 ST[1:0] = 10 0x6A9A 0x6AAC 0x6AAA ST[1:0] = 01 0x9565 0x9553 0x9555 ST[1:0] = 10 0x6A9A 0x6AAC 0x6AAA ST[1:0] = 01 0x9565 0x9553 0x9555 ST[1:0] = 10 0x6A9A 0x6AAC 0x6AAA RESULTS REGISTER GROUPS C1V to C18V (CVA, CVB, CVC, CVD, CVE, CVF) G1V to G9V, REF (AUXA, AUXB, AUXC, AUXD) SC, ITMP, VA, VD (STATA, STATB) Rev. B For more information www.analog.com 31 LTC6813-1 OPERATION ADC Clear Commands LTC6813-1 has 3 clear ADC commands: CLRCELL, CLRAUX and CLRSTAT. These commands clear the registers that store all ADC conversion results. The CLRCELL command clears Cell Voltage Register Groups A, B, C, D, E and F. All bytes in these registers are set to 0xFF by CLRCELL command. The CLRAUX command clears Auxiliary Register Groups A, B, C and D. All bytes in these registers, except the last four registers of Group D, are set to 0xFF by CLRAUX command. The CLRSTAT command clears Status Register Groups A and B except the REV and RSVD bits in Status Register Group B. A read back of REV will return the revision code of the part. RSVD bits always read back 0s. All OV and UV flags, MUXFAIL bit, and THSD bit in Status Register Group B and also in Auxiliary Register Group D are set to 1 by CLRSTAT command. The THSD bit is set to 0 after RDSTATB command. The registers storing SC, ITMP, VA and VD are all set to 0xFF by CLRSTAT command. Open Wire Check (ADOW Command) The ADOW command is used to check for any open wires between the ADCs of the LTC6813-1 and the external cells. This command performs ADC conversions on the C pin inputs identically to the ADCV command, except two internal current sources sink or source current into the two C pins while they are being measured. The pullup (PUP) bit of the ADOW command determines whether the current sources are sinking or sourcing 100μA. The following simple algorithm can be used to check for an open wire on any of the 19 C pins: 1. Run the 18-cell command ADOW with PUP = 1 at least twice. Read the cell voltages for cells 1 through 18 once at the end and store them in array CELLPU(n). 2. Run the 18-cell command ADOW with PUP = 0 at least twice. Read the cell voltages for cells 1 through 18 once at the end and store them in array CELLPD(n). 3. Take the difference between the pull-up and pull-down measurements made in above steps for cells 2 to 18: CELL∆(n) = CELLPU(n) – CELLPD(n). 32 4. For all values of n from 1 to 17: If CELL∆(n+1) 40) to supply the necessary supply current. The peak VREG current requirement of the LTC6813-1 approaches 35mA when simultaneously communicating over isoSPI and making ADC conversions. If the VREG pin is required to support any additional load, a transistor with an even higher Beta may be required. bypassed with a 1µF capacitor. Larger capacitance should be avoided since this will increase the wake-up time of the LTC6813-1. Some attention should be given to the thermal characteristic of the NPN, as there can be significant heating with a high collector voltage. Improved Regulator Power Efficiency For improved efficiency when powering the LTC6813-1 from the cell stack, VREG may be powered from a DC/DC converter, rather than the NPN pass transistor. An ideal circuit is based on Analog Devices LT8631 step-down regulator, as shown in Figure 33. A 100Ω resistor is recommended between the battery stack and the LT8631 input; this will prevent in-rush current when connecting to the stack and it will reduce conducted EMI. The EN/UVLO pin should be connected to the DRIVE pin, which will put the LT8631 into a low power state when the LTC6813-1 is in the SLEEP state. 100Ω LTC6813-1 WDT DRIVE DZT5551 0.1µF VIN 18V TO 100V 100Ω VREG 2.2µF DTEN VREF1 1µF VREF2 V– 1µF 100pF 1µF VIN EN/UV BST MODE SW PG IND TR/SS 25.5k GND 2.2µF 0.1µF 22µH 5V VOUT 4.7pF LT8631 RT V– INTVCC 1M FB 68131 F33 VREG 22µF 191k 68131 F32 Figure 32. Simple VREG Power Source Using NPN Pass Transistor Figure 33. VREG Powered From Cell Stack with High Efficiency Regulator The NPN collector can be powered from any voltage source that is a minimum 6V above V–. This includes the cells that are being monitored, or an unregulated power supply. A 100Ω/100nF RC decoupling network is recommended for the collector power connection to protect the NPN from transients. The emitter of the NPN should be 70 Rev. B For more information www.analog.com LTC6813-1 APPLICATIONS INFORMATION INTERNAL PROTECTION AND FILTERING Filtering of Cell and GPIO Inputs Internal Protection Features The LTC6813-1 uses a delta-sigma ADC, which includes a delta-sigma modulator followed by a SINC3 finite impulse response (FIR) digital filter. This greatly relaxes input filtering requirements. Furthermore, the programmable oversampling ratio allows the user to determine the best trade-off between measurement speed and filter cutoff frequency. Even with this high order low pass filter, fast The LTC6813-1 incorporates various ESD safeguards to ensure robust performance. An equivalent circuit showing the specific protection structures is shown in Figure 34. Zener-like suppressors are shown with their nominal clamp voltage, and the unmarked diodes exhibit standard PN junction behavior. 64 IPB 1 2 3 4 5 6 7 8 9 V+ 63 62 IMB 61 SCK CSB 60 V– 59 V– 58 57 ICMP 56 IBIAS 55 WDT 54 ISOMD SDO 53 52 SDI 51 DTEN 50 VREF1 49 VREF2 DRIVE 120V VREG C18 GPIO9 S18 GPIO8 C17 GPIO7 GPIO6 S17 24V C16 GPIO5 S16 GPIO4 C15 GPIO3 LTC6813-1 S15 GPIO2 10 C14 GPIO1 S14 C0 11 12 13 14 15 16 C13 24V S1 S13 C1 C12 24V 24V 24V S12 24V S2 C2 C11 S3 S11 C10 17 18 S10 19 C9 20 S9 21 C8 22 S8 23 C7 24 S7 25 C6 26 S6 27 C5 28 S5 29 C4 30 S4 31 C3 32 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 68131 F34 NOTE: ZENER VOLTAGE IS 8V UNLESS MARKED OTHERWISE. Figure 34. Internal ESD Protection Structures of the LTC6813-1 Rev. B For more information www.analog.com 71 LTC6813-1 APPLICATIONS INFORMATION transient noise can still induce some residual noise in measurements, especially in the faster conversion modes. This can be minimized by adding an RC low pass decoupling to each ADC input, which also helps reject potentially damaging high energy transients. Adding more than about 100Ω to the ADC inputs begins to introduce a systematic error in the measurement, which can be improved by raising the filter capacitance or mathematically compensating in software with a calibration procedure. For situations that demand the highest level of battery voltage ripple rejection, grounded capacitor filtering is recommended. This configuration has a series resistance and capacitors that decouple HF noise to V–. In systems where noise is less periodic or higher oversample rates are in use, a differential capacitor filter structure is adequate. In this configuration there are series resistors to each input, but the capacitors connect between the adjacent C pins. However, the differential capacitor sections interact. As a result, the filter response is less consistent and results in less attenuation than predicted by the RC, by approximately a decade. Note that the capacitors only see one cell of applied voltage (thus smaller and lower cost) and tend to distribute transient energy uniformly across the IC (reducing stress events on the internal protection structure). Figure 35 shows the two methods schematically. ADC accuracy varies with R, C as shown in the Typical 100Ω CELL2 C2 3.3k BSS308PE 33Ω CELL1 LTC6813-1 10nF 100Ω S2 C1 3.3k BSS308PE 33Ω S1 10nF 100Ω C0 10nF BATTERY V– V– (a) Differential Capacitor Filter 100Ω CELL2 C2 3.3k BSS308PE 33Ω 100Ω CELL1 LTC6813-1 C1 3.3k BSS308PE 33Ω S2 C * C 100Ω S1 * C0 C BATTERY V– * V– *6.8V ZENERS RECOMMENDED IF C ≥ 100nF 68131 F35 (b) Grounded Capacitor Filter Figure 35. Input Filter Structure Configurations 72 Rev. B For more information www.analog.com LTC6813-1 APPLICATIONS INFORMATION Performance curves, but error is minimized if R = 100Ω and C = 10nF. The GPIO pins will always use a grounded capacitor configuration because the measurements are all with respect to V–. Using Nonstandard Cell Input Filters A cell pin filter of 100Ω and 10nF is recommended for all applications. This filter provides the best combination of noise rejection and Total Measurement Error (TME) performance. In applications that use C pin RC filters larger than 100Ω/10nF there may be additional measurement error. Figure 36a shows how both total TME and TME variation increase as the RC time constant increases. The increased error is related to the MUX settling. It is possible to reduce TME levels to near data sheet specifications by implementing an extra single channel conversion before issuing a standard all channel ADCV command. Figure 37a shows the standard ADCV command sequence. Figure 37b andFigure 37c show the recommended command sequence and timing that will allow the MUX to settle. The purpose of the modified procedure is to allow the MUX to settle at C1/C7/C13 before the start of the measurement cycle. The delay between the C1/C7/C13 ADCV command and the All Channel ADCV command is dependent on the time constant of the RC being used. The general guidance is to wait 6τ between the C1/C7/C13 ADCV command and the All Channel ADCV command. Figure 36b shows the expected TME when using the recommended command sequence. 5 CELL MEASUREMENT ERROR (mV) CELL MEASUREMENT ERROR (mV) 5 0 –5 –10 –15 100 100nF 10nF 1µF 1k INPUT RESISTANCE, R (Ω) 0 –5 –10 –15 100 10k 68131 F36a 100nF 10nF 1μF 1k INPUT RESISTANCE, R (Ω) 10k 68131 F36b (b) Cell Measurement Error vs Input RC Values (Extra Conversion and Delay Before Measurement) (a) Cell Measurement Error Range vs Input RC Values Figure 36. Cell Measurement TME (a) ADCV (ALL CELLS) DELAY RDCVA-F (b) ADCV (C1/C7/C13) DELAY 6τ ADCV (ALL CELLS) CNV TIME RDCVA-F (c) ADCV (ALL CELLS) CNV TIME RDCVA-F ADCV (C1/C7/C13) DELAY 6τ 68131 F37 Figure 37. ADC Command Order Rev. B For more information www.analog.com 73 LTC6813-1 APPLICATIONS INFORMATION but the filter resistor must remain small, typically around 10Ω to reduce the effect on the balance current. CELL BALANCING Cell Balancing with Internal MOSFETs With passive balancing, if one cell in a series stack becomes overcharged, an S output can slowly discharge this cell by connecting it to a resistor. Each S output is connected to an internal N-channel MOSFET with a maximum on resistance of 10Ω. An external resistor should be connected in series with these MOSFETs to allow most of the heat to be dissipated outside of the LTC6813-1 package, as illustrated in Figure 38a. The internal discharge switches (MOSFETs) S1 through S18 can be used to passively balance cells as shown in Figure 38a with balancing current of 200mA or less (80mA or less if the die temperature is over 95°C). Balancing current larger than 200mA is not recommended for the internal switches due to excessive die heating. When discharging cells with the internal discharge switches, the die temperature should be monitored. See the Thermal Shutdown section. Note that the anti-aliasing filter resistor is part of the discharge path, so it should be removed or reduced. Use of an RC for added cell voltage measurement filtering is OK RFILTER + LTC6813-1 C(n) RDISCHARGE 1k S(n) CFILTER RFILTER C(n – 1) (a) Internal Discharge Circuit BSS308PE + C(n) LTC6813-1 Cell Balancing with External Transistors For applications that require balancing currents above 200mA or large cell filters, the S outputs can be used to control external transistors. The LTC6813-1 includes an internal pull-up PMOS transistor with a 1k series resistor. The S pins can act as digital outputs suitable for driving the gate of an external MOSFET as illustrated in Figure 38b. Figure 35 shows external MOSFET circuits that include RC filtering. For applications with very low cell voltages the PMOS in Figure 38b can be replaced with a PNP. When a PNP is used, the resistor in series with the base should be reduced. Choosing a Discharge Resistor When sizing the balancing resistor, it is important to know the typical battery imbalance and the allowable time for cell balancing. In most small battery applications, it is reasonable for the balancing circuitry to be able to correct for a 5% SOC (State of Charge) error with 5 hours of balancing. For example a 5AHr battery with a 5% SOC imbalance will have approximately 250mA Hrs of imbalance. Using a 50mA balancing current this could be corrected in 5 hours. With a 100mA balancing current, the error would be corrected in 2.5 hours. In systems with very large batteries, it becomes difficult to use passive balancing to correct large SOC imbalances in short periods of time. The excessive heat created during balancing generally limits the balancing current. In large capacity battery applications, if short balancing times are required, an active balancing solution should be considered. When choosing a balance resistor, the following equations can be used to help determine a resistor value: Balance Current = 3.3k %SOC_Imbalance • Battery Capacity S(n) Balance Resistor = C(n – 1) 68131 F38 Nominal Cell Voltage (b) External Discharge Circuit Balance Current Figure 38. Internal/External Discharge Circuits 74 Number of Hours to Balance RDISCHARGE Rev. B For more information www.analog.com LTC6813-1 APPLICATIONS INFORMATION Active Cell Balancing Applications that require 1A or greater of cell balancing current should consider implementing an active balancing system. Active balancing allows for much higher balancing currents without the generation of excessive heat. Active balancing also allows for energy recovery since most of the balance current will be redistributed back to the battery pack. Figure 39 shows a simple active balancing implementation using Analog Devices LT8584. The LT8584 also has advanced features which can be controlled via the LTC6813-1. See S Pin Pulsing Using the S Pin Control Settings in this data sheet and the LT8584 data sheet for more details. MODULE + 2.5A AVERAGE DISCHARGE + BAT 18 MODULE + • • MODULE – V+ ON OFF LT8584 2.5A AVERAGE DISCHARGE + BAT 2 S18 MODULE + • • MODULE – ON OFF LT8584 2.5A AVERAGE DISCHARGE + BAT 1 LTC6813-1 BATTERY STACK MONITOR S2 MODULE + MODULE – LT8584 If the discharge permitted (DCP) bit is high at the time of a cell measurement command, the S pin discharge states do not change during cell measurements. If the DCP bit is low, S pin discharge states will be disabled while the corresponding cell or adjacent cells are being measured. If using an external discharge transistor, the relatively low 1kΩ impedance of the internal LTC6813-1 PMOS transistors should allow the discharge currents to fully turn off before the cell measurement. Table 57 illustrates the ADCV command with DCP = 0. In this table, OFF indicates that the S pin discharge is forced off irrespective of the state of the corresponding DCC[x] bit. ON indicates that the S pin discharge will remain on during the measurement period if it was ON prior to the measurement command. In some cases, it is not possible for the automatic discharge control to eliminate all measurement error caused by running the discharges. This is due to the discharge transistor not turning off fast enough for the cell voltage to completely settle before the measurement starts. For the best measurement accuracy when running discharge, the MUTE and UNMUTE commands should be used. The MUTE command can be issued to temporarily disable all discharge transistors before the ADCV command is issued. After the cell conversion completes, an UNMUTE can be sent to re-enable all discharge transistors that were previously ON. Using this method maximizes the measurement accuracy with a very small time penalty. Method to Verify Discharge Circuits • • DISCHARGE CONTROL DURING CELL MEASUREMENTS ON OFF S1 V–/C0 68131 F39 MODULE – When using the internal discharge feature, the ability to verify discharge functionality can be implemented in software. In applications using an external discharge MOSFET, an additional resistor can be added between the battery cell and the source of the discharge MOSFET. This will allow the system to test discharge functionality. Figure 39. 18-Cell Battery Stack Module with Active Balancing Rev. B For more information www.analog.com 75 LTC6813-1 APPLICATIONS INFORMATION Table 57. Discharge Control During an ADCV Command with DCP = 0 CELL MEASUREMENT PERIODS CELL 1/7/13 CELL 2/8/14 CELL 3/9/15 CELL 4/10/16 CELL 5/11/17 CELL CALIBRATION PERIODS CELL 6/12/18 CELL 1/7/13 CELL 2/8/14 t1M – t2M t2M – t3M t3M – t4M t4M – t5M t5M – t6M t6M – t1C t1C – t2C OFF ON ON ON OFF OFF OFF CELL 3/9/15 CELL 4/10/16 CELL 5/11/17 CELL 6/12/18 t2C – t3C t3C – t4C t4C – t5C t5C – t6C ON ON ON OFF DISCHARGE PIN t0 – t1M S1 OFF S2 OFF OFF OFF ON ON ON OFF OFF OFF ON ON ON S3 ON OFF OFF OFF ON ON ON OFF OFF OFF ON ON S4 ON ON OFF OFF OFF ON ON ON OFF OFF OFF ON S5 ON ON ON OFF OFF OFF ON ON ON OFF OFF OFF S6 OFF ON ON ON OFF OFF OFF ON ON ON OFF OFF S7 OFF OFF ON ON ON OFF OFF OFF ON ON ON OFF S8 OFF OFF OFF ON ON ON OFF OFF OFF ON ON ON S9 ON OFF OFF OFF ON ON ON OFF OFF OFF ON ON S10 ON ON OFF OFF OFF ON ON ON OFF OFF OFF ON S11 ON ON ON OFF OFF OFF ON ON ON OFF OFF OFF S12 OFF ON ON ON OFF OFF OFF ON ON ON OFF OFF S13 OFF OFF ON ON ON OFF OFF OFF ON ON ON OFF S14 OFF OFF OFF ON ON ON OFF OFF OFF ON ON ON S15 ON OFF OFF OFF ON ON ON OFF OFF OFF ON ON S16 ON ON OFF OFF OFF ON ON ON OFF OFF OFF ON S17 ON ON ON OFF OFF OFF ON ON ON OFF OFF OFF S18 OFF ON ON ON OFF OFF OFF ON ON ON OFF OFF 76 Rev. B For more information www.analog.com LTC6813-1 APPLICATIONS INFORMATION Both circuits are shown in Figure 40. The functionality of the discharge circuits can be verified by conducting cell measurements and comparing measurements when the discharge is off to measurements when the discharge is on. The measurement taken when the discharge is on requires that the discharge permit bit (DCP) be set. The change in the measurement when the discharge is turned on is calculable based on the resistor values. The following algorithm can be used in conjunction with Figure 40 to verify each discharge circuit: 1. Measure all cells with no discharging (all S outputs off) and read and store the results. 2. Turn on S1, S7 and S13. 3. Measure C1–C0, C7–C6, C13–C12. 4. Turn off S1, S7 and S13. 5. Turn on S2, S8 and S14. 6. Measure C2–C1, C8–C7, C14–C13. 7. Turn off S2, S8 and S14. … 17. Turn on S6, S12 and S18. 18. Measure C6–C5, C12–C11, C18–C17. 19. Turn off S6, S12 and S18. 20. Read the Cell Voltage Register Groups to get the results of Steps 2 thru 19. 21. Compare new readings with old readings. Each cell voltage reading should have decreased by a fixed percentage set by RDISCHARGE and RFILTER for internal designs and RDISCHARGE1 and RDISCHARGE2 for external MOSFET designs. The exact amount of decrease depends on the resistor values and MOSFET characteristics. LTC6813-1 C(n) RFILTER + RDISCHARGE 1k S(n) CFILTER RFILTER C(n–1) (a) Internal Discharge Circuit RFILTER RDISCHARGE1 + 3.3k RDISCHARGE2 RFILTER C(n) LTC6813-1 S(n) C(n–1) 68131 F40 (b) External Discharge Circuit Figure 40. Balancing Self Test Circuit Rev. B For more information www.analog.com 77 LTC6813-1 APPLICATIONS INFORMATION DIGITAL COMMUNICATIONS PEC Calculation The Packet Error Code (PEC) can be used to ensure that the serial data read from the LTC6813-1 is valid and has not been corrupted. This is a critical feature for reliable communication, particularly in environments of high noise. The LTC6813-1 requires that a PEC be calculated for all data being read from, and written to, the LTC6813-1. For this reason it is important to have an efficient method for calculating the PEC. The C code below provides a simple implementation of a lookup-table-derived PEC calculation method. There are two functions. The first function init_PEC15_Table() should only be called once when the microcontroller starts and will initialize a PEC15 table array called pec15Table[]. This table will be used in all future PEC calculations. The PEC15 table can also be hard coded into the microcontroller rather than running the init_PEC15_Table() function at startup. The pec15() function calculates the PEC and will return the correct 15-bit PEC for byte arrays of any given length. /************************************ Copyright 2012 Analog Devices, Inc. (ADI) Permission to freely use, copy, modify, and distribute this software for any purpose with or without fee is hereby granted, provided that the above copyright notice and this permission notice appear in all copies: THIS SOFTWARE IS PROVIDED “AS IS” AND ADI DISCLAIMS ALL WARRANTIES INCLUDING ALL IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS. IN NO EVENT SHALL ADI BE LIABLE FOR ANY SPECIAL, DIRECT, INDIRECT, OR CONSEQUENTIAL DAMAGES OR ANY DAMAGES WHATSOEVER RESULTING FROM ANY USE OF SAME, INCLUDING ANY LOSS OF USE OR DATA OR PROFITS, WHETHER IN AN ACTION OF CONTRACT, NEGLIGENCE OR OTHER TORTUOUS ACTION, ARISING OUT OF OR IN CONNECTION WITH THE USE OR PERFORMANCE OF THIS SOFTWARE. ***************************************/ int16 pec15Table[256]; int16 CRC15_POLY = 0x4599; void init_PEC15_Table() { for (int i = 0; i < 256; i++) { remainder = i 0; --bit) { if (remainder & 0x4000) { remainder = ((remainder 7) ^ data[i]) & 0xff;//calculate PEC table address remainder = (remainder 50m): IB = 1mA and K = 0.25 For applications with little system noise, setting IB to 0.5mA is a good compromise between power consumption and noise immunity. Using this IB setting with a 1:1 transformer and RM = 100Ω, RB1 should be set to 3.01k and RB2 set to 1k. With typical CAT5 twisted pair, these settings will allow for communication up to 50m. For applications in very noisy environments or that require cables longer than 50m it is recommended to increase IB to 1mA. Higher drive current compensates for the increased insertion loss in the cable and provides high noise immunity. When using cables over 50m and a transformer with a 1:1 turns ratio and RM = 100Ω, RB1 would be 1.5k and RB2 would be 499Ω. The maximum clock rate of an isoSPI link is determined by the length of the isoSPI cable. For cables 10m or less, the maximum 1MHz SPI clock frequency is possible. As the length of the cable increases, the maximum possible SPI clock rate decreases. This dependence is a result of the increased propagation delays that can create possible timing violations. Figure 42 shows how the maximum data rate reduces as the cable length increases when using a CAT5 twisted pair. Cable delay affects three timing specifications: tCLK, t6 and t7. In the Electrical Characteristics table, each of these specifications is de-rated by 100ns to allow for 50ns RB1 = (2/IB) – RB2 ISOLATION BARRIER (MAY USE ONE OR TWO TRANFORMERS) ISOMD MASTER SDO SDI SCK CS IPB + LTC6813-1 VA SDI IMB – SDO IBIAS SCK 2V CSB ICMP RM RB1 • • • • TWISTED-PAIR CABLE WITH CHARACTERISTIC IMPEDANCE RM + IPA ISOMD RM VA LTC6813-1 – IMA RB1 2V VREG IBIAS ICMP RB2 RB2 68131 F41 Figure 41. isoSPI Circuit Rev. B For more information www.analog.com 79 LTC6813-1 APPLICATIONS INFORMATION 1.2 CAT5 ASSUMED DATA RATE (Mbps) 1.0 0.8 0.6 0.4 0.2 0 10 CABLE LENGTH (METERS) 1 100 68131 F42 Figure 42. Data Rate vs Cable Length of cable delay. For longer cables, the minimum timing parameters may be calculated as shown below: tCLK, t6 and t7 > 0.9μs + 2 • tCABLE (0.2m per ns) Implementing a Modular isoSPI Daisy Chain The hardware design of a daisy-chain isoSPI bus is identical for each device in the network due to the daisy-chain point-to-point architecture. The simple design as shown in Figure 41 is functional, but inadequate for most designs. The termination resistor RM should be split and bypassed with a capacitor as shown in Figure 43. This change provides both a differential and a common mode termination, and as such, increases the system noise immunity. IP 49.9Ω 100µH CMC • 100pF 10nF 49.9Ω 100pF • • LTC6813-1 XFMR • IM V– (a) IP 100µH CMC • 51Ω 10nF IM V– 51Ω • • isoSPI LINK • LTC6813-1 CT XFMR 10nF 68131 F43 (b) Figure 43. Daisy Chain Interface Components 80 isoSPI LINK The use of cables between battery modules, particularly in automotive applications, can lead to increased noise susceptibility in the communication lines. For high levels of electromagnetic interference (EMC), additional filtering is recommended. The circuit example in Figure 43 shows the use of common mode chokes (CMC) to add common mode noise rejection from transients on the battery lines. The use of a center tapped transformer will also provide additional noise performance. A bypass capacitor connected to the center tap creates a low impedance for common mode noise (Figure 43b). Since transformers without a center tap can be less expensive, they may be preferred. In this case, the addition of a split termination resistor and a bypass capacitor (Figure  43a) can enhance the isoSPI performance. Large center tap capacitors greater than 10nF should be avoided as they may prevent the isoSPI common mode voltage from settling. Common mode chokes similar to those used in Ethernet or CANbus applications are recommended. Specific examples are provided in Table 59. An important daisy chain design consideration is the number of devices in the isoSPI network. Both the number of devices in a daisy chain and the length of wire between devices determines the serial timing and affects data latency and throughput. For a daisy chain, it is necessary to extend minimum required t5, the time from a rising chip select to the next falling chip select (between commands), from 0.65μs to 2μs (see Figure 25). This timing for t5 is set by the MCU on the SPI interface of LTC6820 or the SPI interface of the bottom LTC6813-1 device if it is configured to operate in SPI mode. If necessary, LTC6813-1 will internally adjust the timing for t6 and t5 while transmitting on the Master isoSPI port such that t6 (Master port) > t6(GOV) and t5 (Master port) > t5(GOV). This satisfies the timing requirement for the Slave port of the next device. If the t5 requirement of 2μs is satisfied on the SPI interface, there is no strict limitation on the maximum number of devices in the daisy chain. However, it is important to note that the serial read back time, and the increased current consumption, might dictate a practical limitation in the size of the network. Rev. B For more information www.analog.com LTC6813-1 APPLICATIONS INFORMATION Connecting Multiple LTC6813-1s on the Same PCB When connecting multiple LTC6813-1 devices on the same PCB, only a single transformer is required between the LTC6813-1 isoSPI ports. The absence of the cable also reduces the noise levels on the communication lines and often only a split termination is required. Figure 44 shows an example application that has multiple LTC6813-1s on the same PCB, communicating to the bottom MCU through an LTC6820 isoSPI driver. If a transformer with a center tap is used, a capacitor can be added for better noise rejection. Additional noise filtering can be provided with discrete common mode chokes (not shown) placed to both sides of the single transformer. IPB LTC6813-1 49.9Ω 10nF 49.9Ω GNDD IMB IBIAS ICMP 1k 1k GNDD IPA 49.9Ω 10nF 49.9Ω V– GNDD GNDD 10nF* • IMA • GNDD 10nF* GNDC IPB LTC6813-1 49.9Ω 10nF 49.9Ω GNDC IMB IBIAS ICMP 1k 1k GNDC IPA 49.9Ω 49.9Ω V– IMA 10nF GNDC GNDC 10nF* • GNDC • 10nF* GNDB IPB LTC6813-1 49.9Ω 49.9Ω IMB IBIAS ICMP 1k 10nF GNDB 1k GNDB IPA 49.9Ω 49.9Ω – V IMA 10nF* 10nF GNDB GNDB • • IP LTC6820 49.9Ω 10nF* GNDA 49.9Ω IBIAS ICMP 10nF GNDA IM 1k 1k GNDA V– GNDA GNDB * IF TRANSFORMER BEING USED HAS A CENTER TAP, IT SHOULD BE BYPASSED WITH A 10nF CAP 68131 F44 Figure 44. Daisy Chain Interface Components on Single Board Rev. B For more information www.analog.com 81 LTC6813-1 APPLICATIONS INFORMATION On single board designs with low noise requirements, it is possible for a simplified capacitor-isolated coupling as shown in Figure 45 to replace the transformer. between the microcontroller and the stack of LTC6813‑1s. The LTC6820 also enables system configurations that have the BMS controller at a remote location relative to the LTC6813-1 devices and the battery pack. In this circuit, the transformer is directly replaced by two 10nF capacitors. A common mode choke (CMC) provides noise rejection similar to application circuits usng transformers. The circuit is designed to use IBIAS/ICMP settings identical to the transformer circuit. Transformer Selection Guide As shown in Figure 41, a transformer or pair of transformers isolates the isoSPI signals between two isoSPI ports. The isoSPI signals have programmable pulse amplitudes up to 1.6VP-P and pulse widths of 50ns and 150ns. To be able to transmit these pulses with the necessary fidelity, the system requires that the transformers have primary inductances above 60μH and a 1:1 turns ratio. It is also necessary to use a transformer with less than 2.5μH of leakage inductance. In terms of pulse shape the primary inductance will mostly affect the pulse droop of the 50ns Connecting an MCU to an LTC6813-1 with an isoSPI Data Link The LTC6820 will convert standard 4-wire SPI into a 2-wire isoSPI link that can communicate directly with the LTC6813-1. An example is shown in Figure 46. The LTC6820 can be used in applications to provide isolation ACT45B-101-2P-TL003 49.9Ω GNDB IMB IBIAS ICMP 1k • 49.9Ω 10nF • IPB LTC6813-1 10nF 10nF 1k GNDB IPA 49.9Ω 10nF 49.9Ω GNDB IMA IPB LTC6813-1 ACT45B-101-2P-TL003 49.9Ω 10nF • GNDB 49.9Ω GNDA IMB IBIAS ICMP 1k • V– 10nF 10nF 1k GNDA IPA 49.9Ω 10nF 49.9Ω V– GNDA IMA GNDA 68131 F45 Figure 45. Capacitive Isolation Coupling for LTC6813-1s on the Same PCB 82 Rev. B For more information www.analog.com LTC6813-1 APPLICATIONS INFORMATION and 150ns pulses. If the primary inductance is too low, the pulse amplitude will begin to droop and decay over the pulse period. When the pulse droop is severe enough, the effective pulse width seen by the receiver will drop substantially, reducing noise margin. Some droop is acceptable as long as it is a relatively small percentage of the total pulse amplitude. The leakage inductance primarily affects the rise and fall times of the pulses. Slower rise and fall times will effectively reduce the pulse width. Pulse width is determined by the receiver as the time the signal is above the threshold set at the ICMP pin. Slow rise and fall times cut into the timing margins. Generally it is best to keep pulse edges as fast as possible. When evaluating transformers, it is also worth noting the parallel winding capacitance. While transformers have very good CMRR at low frequency, this rejection will degrade at higher frequencies, largely due to the winding to winding capacitance. When choosing a transformer, it is best to pick one with less parallel winding capacitance when possible. When choosing a transformer, it is equally important to pick a part that has an adequate isolation rating for the application. The working voltage rating of a transformer is a key spec when selecting a part for an application. Interconnecting daisy-chain links between LTC6813-1 IPB LTC6813-1 49.9Ω • • • • devices see 400Vrms (est) 600V (est) 80V 700V 300V (est) 250V 1600V (est) 6.5mm 3.8mm 8.6mm 10mm 9.4mm 6.4mm 6.3mm 5.7mm 3.5mm 7mm 10mm 3.5mm 3.5mm 8.5mm 11.6mm 8.9mm 9.5mm 8.9mm 8.9mm 7.6mm 7.6mm 9mm 9.2mm 9.2mm 5.2mm 7.5mm 8.9mm 21.1mm 16.6mm 12.1mm 12.1mm 16.6mm 9.9mm 9.3mm 15.5mm 12.0mm 12.0mm 9.1mm 12.8mm 6SMT 6SMT 6TH 6SMT 6SMT 6TH 6SMT 6SMT 6SMT 4SMT 8SMT 4SMT 4SMT l 4.0mm 8.5mm 2.9mm 3.2mm 10.6mm 10.4mm 8.8mm 6.3mm 2.2mm 4.4mm 5.0mm 10.0mm 13.8mm 4.5mm 12.6mm 8.9mm 9.1mm 19.5mm 6SMT 6SMT 8SMT 6SMT 4SMT 6SMT l VWORKING l – l l 4.3kVdc 4kVrms 5kVrms 3kVrms 3kVrms 5kVrms 4.3kVdc 4.3kVdc 4.3kVdc 2.5kVrms 2.5kVrms 3kVrms 2.5kVrms l l l l l l – – – – l l 3.4kVdc ~1kV 2.8kVrms 3kVrms 3kVrms 2.9kVrms l l l – l l l – – – – – l – – – – – – – – l l l l l AECQ200 – l l l – – l l – – – – – – – – l l – l l – – l l l l l – l Table 59. Recommended Common Mode Chokes MANUFACTURER 84 PART NUMBER TDK ACT45B-101-2P Murata DLW43SH101XK2 Rev. B For more information www.analog.com LTC6813-1 APPLICATIONS INFORMATION isoSPI Layout Guidelines Layout of the isoSPI signal lines also plays a significant role in maximizing the noise immunity of a data link. The following layout guidelines are recommended: 1. The transformer should be placed as close to the isoSPI cable connector as possible. The distance should be kept less than 2cm. The LTC6813-1 should be placed close to but at least 1cm to 2cm away from the transformer to help isolate the IC from magnetic field coupling. 2. A V– ground plane should not extend under the transformer, the isoSPI connector or in between the transformer and the connector. 3. The isoSPI signal traces should be as direct as possible while isolated from adjacent circuitry by ground metal or space. No traces should cross the isoSPI signal lines, unless separated by a ground plane on an inner layer. System Supply Current The LTC6813-1 has various supply current specifications for the different states of operation. The average supply current depends on the control loop in the system. It is necessary to know which commands are being executed each control loop cycle, and the duration of the control loop cycle. From this information it is possible to determine the percentage of time the LTC6813-1 is in the MEASURE state versus the low power SLEEP state. The amount of isoSPI or SPI communication will also affect the average supply current. Calculating Serial Throughput For any given LTC6813-1 the calculation to determine communication time is simple: it is the number of bits in the transmission multiplied by the SPI clock period being used. The control protocol of the LTC6813-1 is very uniform so almost all commands can be categorized as a write, read or an operation. Table 60 can be used to determine the number of bits in a given LTC6813-1 command. ENHANCED APPLICATIONS Using the LTC6813-1 with Fewer than 18 Cells Cells can be connected in a conventional bottom (C1) to top (C18) sequence with all unused C inputs either shorted to the highest connected cell or left open. The unused S pins can simply be left unconnected. Alternatively, to optimize measurement synchronization in applications with fewer than eighteen cells, the unused C pins may be equally distributed between the top of the third MUX (C18), the top of the second MUX (C12) and the top of the first MUX (C6). See Figure 47. If the number of cells being measured is not a multiple of three, the top MUX(es) should have fewer cells connected. The unused cell inputs should be tied to the other unused inputs on the same MUX and then connected to the battery stack through a 100Ω resistor. The unused inputs will result in a reading of 0.0V for those cells. Current Measurement with a Hall-Effect Sensor The LTC6813-1 auxiliary ADC inputs (GPIO pins) may be used for any analog signal, including active sensors with 0V to 5V analog outputs. For battery current measurements, Hall-effect sensors provide an isolated, low power solution. Figure 48 shows schematically a typical Hall-effect sensor that produces two outputs that proportion to the VCC provided. The sensor in Figure 48 has two bidirectional outputs centered at half of VCC. CH1 is a 0A to 50A low range and CH2 is a 0A to 200A high range. The sensor is powered from a 5V source and produces analog outputs that are connected to GPIO pins or inputs of the Table 60. Daisy Chain Serial Time Equations COMMAND TYPE CMD BYTES + CMD PEC DATA BYTES + DATA PEC PER IC TOTAL BITS COMMUNICATION TIME Read 4 8 (4 + (8 • #ICs)) • 8 Total Bits • Clock Period Write 4 8 (4 + (8 • #ICs)) • 8 Total Bits • Clock Period Operation 4 0 4 • 8 = 32 32 • Clock Period Rev. B For more information www.analog.com 85 LTC6813-1 APPLICATIONS INFORMATION NEXT HIGHER GROUP OF 16 CELLS 16-CELL MODULE NEXT HIGHER GROUP OF 14 CELLS V+ C18 S18 C17 S17 C16 S16 C15 S15 C14 S14 C13 S13 C12 S12 C11 S11 C10 S10 C9 S9 C8 S8 C7 S7 C6 S6 C5 S5 C4 S4 C3 S3 C2 S2 C1 S1 C0 V– LTC6813-1 14-CELL MODULE V+ C18 S18 C17 S17 C16 S16 C15 S15 C14 S14 C13 S13 C12 S12 C11 S11 C10 S10 C9 S9 C8 S8 C7 S7 C6 S6 C5 S5 C4 S4 C3 S3 C2 S2 C1 S1 C0 V– LTC6813-1 68131 F47 NEXT LOWER GROUP OF 16 CELLS NEXT LOWER GROUP OF 14 CELLS Figure 47. Cell Connection Schemes for 16 and 14 Cells LEM DHAB CH2 VCC GND CH1 A B C D ANALOG → GPIO2 5V ANALOG_COM → V– ANALOG0 → GPIO1 68131 F48 Figure 48. Interfacing a Typical Hall-Effect Battery Current Sensor to Auxiliary ADC Inputs 86 Rev. B For more information www.analog.com LTC6813-1 APPLICATIONS INFORMATION MUX application shown in Figure 50. The use of GPIO1 and GPIO2 as the ADC inputs has the possibility of being digitized within the same conversion sequence as the cell inputs (using the ADCVAX command), thus synchronizing cell voltage and cell current measurements. 100 90 Expanding the Number of Auxiliary Measurements The LTC6813-1 has nine GPIO pins that can be used as ADC inputs. In applications that need to measure more than nine signals, a multiplexer (MUX) circuit can be ANALOG1 ANALOG2 ANALOG3 ANALOG4 ANALOG5 ANALOG6 ANALOG7 ANALOG8 S1 S2 S3 S4 S5 S6 S7 S8 ANALOG9 ANALOG10 ANALOG11 ANALOG12 ANALOG13 ANALOG14 ANALOG15 ANALOG16 S1 S2 S3 S4 S5 S6 S7 S8 VTEMP NTC 10k AT 25°C V– VDD GND A0 A1 SCL SDA D RESET 70 60 50 40 30 20 10 0 –40 –20 0 20 40 60 TEMPERATURE (°C) 80 68131 F49 Figure 49. Typical Temperature Probe Circuit and Relative Output implemented to expand the analog measurements to sixteen different signals (Figure 50). The GPIO1 ADC input is used for measurement and MUX control is provided by the I2C port on GPIO 4 and 5. The buffer amplifier was selected for fast settling and will increase the usable throughput rate. ADG728 VDD GND A0 A1 SCL SDA D RESET ADG728 VTEMPx (% VREF2) 10k READING EXTERNAL TEMPERATURE PROBES Figure 49 shows the typical biasing circuit for a negative temperature coefficient (NTC) thermistor. The 10k at 25°C is the most popular sensor value and the VREF2 output stage is designed to provide the current required to bias several of these probes. The biasing resistor is selected to correspond to the NTC value so the circuit will provide 1.5V at 25°C (VREF2 is 3V nominal). The overall circuit response is approximately –1%/°C in the range of typical cell temperatures, as shown in the chart of Figure 49. 80 VREF2 VREG V– 20k 20k LTC6813-1 1µF GPIO5 GPIO4 – LTC6255 + 100Ω GPIO1 10nF 68131 F50 ANALOG INPUTS: 0.04V TO 4.5V Figure 50. MUX Circuit Supports Sixteen Additional Analog Measurements Rev. B For more information www.analog.com 87 LTC6813-1 PACKAGE DESCRIPTION LWE Package 64-Lead Plastic Exposed Pad LQFP (10mm × 10mm) (Reference LTC DWG #05-08-1982 Rev A) 10.15 – 10.25 7.50 REF 1 64 49 48 0.50 BSC 5.74 ±0.05 7.50 REF 0.20 – 0.30 10.15 – 10.25 5.74 ±0.05 16 17 PACKAGE OUTLINE 33 32 1.30 MIN RECOMMENDED SOLDER PAD LAYOUT APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED 12.00 BSC 10.00 BSC 5.74 ±0.10 64 49 SEE NOTE: 3 1 64 49 48 48 1 12.00 BSC 10.00 BSC A 5.74 ±0.10 A 16 33 33 16 C0.30 – 0.50 17 32 17 BOTTOM OF PACKAGE—EXPOSED PAD (SHADED AREA) 32 11° – 13° R0.08 – 0.20 1.60 1.35 – 1.45 MAX GAUGE PLANE 0.25 0° – 7° LWE64 LQFP 0416 REV A 11° – 13° 0.50 BSC 0.09 – 0.20 1.00 REF 0.17 – 0.27 0.05 – 0.15 SIDE VIEW 0.45 – 0.75 SECTION A – A NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DIMENSIONS OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.25mm (10 MILS) BETWEEN THE LEADS AND MAX 0.50mm (20 MILS) ON ANY SIDE OF THE EXPOSED PAD, MAX 0.77mm (30 MILS) AT CORNER OF EXPOSED PAD, IF PRESENT 88 3. PIN-1 INDENTIFIER IS A MOLDED INDENTATION, 0.50mm DIAMETER 4. DRAWING IS NOT TO SCALE Rev. B For more information www.analog.com LTC6813-1 REVISION HISTORY REV DATE DESCRIPTION A 03/19 Title Changed. Added Automotive Qualification to Front Page Features. Added Order Information for Tape and Reel. Added Note Regarding Automotive Products. Added Plot Measurement Error Due to IR Reflow. Added Plot VREF2 Change Due to IR Reflow. Updated Figure 1 LTC6813-1 Operation State Diagram. Voltage Range Changed from 2.988V to 3.012V to 2.990V to 3.014V (2.992V to 3.012V for LTC6813I) Under Accuracy Check Section. Updated Figure 18 LTC6813-1 Operation State Diagram Capacitive Coupled Daisy-Chain Configuration. Voltage Range Changed from 2.988V to 3.12V to 2.990V to 3.014V (2.992V to 3.012V for LTC6813I) Under REF, Table 56, Memory Bit Description. Added PWMx (PWM Discharge Control) to Table 56. Memory Bit Description. Rewrote the Section Improved Regulator Power Efficiency. Updated Figure 34 Internal ESD Protection Structures of the LTC6813-1. Updated Figure 37 ADC Command Order. Renumbered the Steps for Discharge Verification Circuitry. Updated Figure 43 Daisy Chain Interface Components. Rewrote the Last Paragraph Section Transformer Selection Guide. Updated Figure 45 Capacitive Isolation Coupling for LTC6813-1x on the Same PCB. Updated Figure 47 Cell Connection Schemes for 16 and 14 Cells. Updated Related Parts Section. B 11/20 Added Section “Reset Behaviors” into the Table of Contents. Renamed Sum of Cells to “Sum of All Cells”. Changed to ADC Timing Specifications: tCYCLE, tSKEW1, tSKEW2 Min Values. Rewrite to section entitled “CORE LTC6813-1 STATE DESCRIPTIONS”. Rewrite to section entitled “ADC Conversion with Digital Redundancy”. Rewrite to section entitled “Thermal Shutdown”. Rewrite to section entitled “WATCHDOG AND DISCHARGE TIMER”. Added new section entitled “RESET BEHAVIORS”. Rewrite to section entitled “Implementing a Modular isoSPI Daisy Chain”. Update to Table 58. Recommended Transformers. Rewrite to section entitled “Related Parts”. PAGE NUMBER 1 1 3 3 10 12 18 29 42 65 66 67 68 70 74 77 79 79 83 88 2 4, 5, 26-28, 68 6, 7 18-19 27-28 32 33-34 35 80 84 90 Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license For is granted implication or otherwise under any patent or patent rights of Analog Devices. more by information www.analog.com 89 LTC6813-1 TYPICAL APPLICATION 100Ω 100nF 100Ω 10Ω 100nF 33Ω 10Ω + C17 3.7V CELL3 TO CELL16 CIRCUITS + C2 3.7V 100nF 33Ω VREG S18 VREF1 1μF 1μF C17 VREF2 1μF IPB LTC6813-1 10Ω 100nF 33Ω 100Ω C2 IMB IPA S2 100Ω 100nF C1 3.7V C18 NPN S17 10Ω + DRIVE • • C18 3.7V V+ • • + 10nF 33Ω 10Ω C1 IMA S1 IBIAS C0 ICMP – ISOMD V 1k 1k VREG 68131 TA02 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LTC6810-1/ LTC6810-2 4th Generation 6-Cell Battery Stack Monitor and Balancing IC Measures Cell Voltages for Up to 6 Series Battery Cells. Daisy-Chain Capability Allows Multiple Devices to Be Connected to Measure Many Battery Cells Simultaneously. The isoSPI Bus Can Operate Up to 1MHz and Can Be Operated Bidirectionally for Fault Conditions, Such As a Broken Wire or Connector. Includes Internal Passive Cell Balancing of up to 150mA. Each Cell Measurement Channel Includes Redundant Measurement Capability. LTC6811-1/ LTC6811-2 4th Generation 12-Cell Battery Stack Monitor and Balancing IC Measures Cell Voltages for Up to 12 Series Battery Cells. Daisy-Chain Capability Allows Multiple Devices to Be Connected to Measure Many Battery Cells Simultaneously Via the Built-In 1MHz, 2-Wire Isolated Communication (isoSPI). Includes Capability for Passive Cell Balancing. LTC6812-1 4th Generation 15-Cell Battery Stack Monitor and Balancing IC Measures Cell Voltages for Up to 15 Series Battery Cells. The isoSPI Daisy-Chain Capability Allows Multiple Devices to Be Connected to Measure Many Battery Cells Simultaneously. The isoSPI Bus Can Operate Up to 1MHz and Can Be Operated Bidirectionally for Fault Conditions, Such As a Broken Wire or Connector. Includes Internal Passive Cell Balancing Capability of Up to 200mA. LTC6820 isoSPI Isolated Communications Interface Provides an Isolated Interface for SPI Communication Up to 100 Meters, Using a Twisted Pair. Companion to the LTC6806, LTC6810, LTC6811, LTC6812 and LTC6813. 90 Rev. B 11/20 www.analog.com For more information www.analog.com  ANALOG DEVICES, INC. 2018-2020
LTC6813HLWE-1#3ZZPBF
1. 物料型号:文档中提到的物料型号是LTC6813-1,这是一款高精度的电池监控器,用于电动汽车和储能系统中的电池组电压测量。

2. 器件简介:LTC6813-1是一款第四代电池堆监控和平衡集成电路,能够测量多达18节串联电池单元的电压。它具有内置的isoSPI总线,可以实现高达1MHz的通信速度,并能够双向通信以检测故障情况,如断线或连接器问题。该器件还包括内部被动电池平衡功能,最高可达200mA。

3. 引脚分配:文档中详细描述了LTC6813-1的引脚分配,包括电源引脚、通信引脚、平衡控制引脚等。

4. 参数特性:LTC6813-1具有多种参数特性,包括但不限于测量精度、通信速度、工作电压范围、温度范围等。

5. 功能详解:文档详细介绍了LTC6813-1的主要功能,包括电池电压测量、电池平衡控制、通信协议、故障检测等。

6. 应用信息:LTC6813-1适用于需要精确电池监控和管理的应用,如电动汽车、储能系统等。

7. 封装信息:LTC6813-1采用64引脚塑料暴露垫LQFP封装,具有较大的热垫以提高散热性能。
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