SD210DE

SD-SST210/214 Linear Integrated Systems N-CHANNEL LATERAL DMOS SWITCH Product Summary Part Number SD210DE SD214DE SST210 SST214 V(BR)DS Min(V) 30 20 30 20 VGS(th) Max (V) 1.5 1.5 1.5 1.5 rDS(on) Max(Ω) 45 @ VGS = 10V 45 @ VGS = 10V 50 @ VGS = 10V 50 @ VGS = 10V Crss Max (pF) 0.5 0.5 0.5 0.5 tON Max (ns) 2 2 2 2 Features • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage • N-Channel Enhancement Mode Benefits • High-Speed System Performance • Low Insertion Loss at High Frequencies • Low Transfer Signal Loss • Simple Driver Requirement • Single Supply Operation Applications • Fast Analog Switch • Fast Sample-and-Holds • Pixel-Rate Switching • DAC Deglitchers • High-Speed Driver Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and ± voltage capability from gate to substrate. A poly-silicon gate is featured for manufacturing reliability. For similar products see: quad array—SD5000/5400 series, and Zener protected—SD211DE/SST211 series. Top View SD210DE SD214DE Top View SST210 SST214 Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted) Gate-Drain, Gate-Source Voltage ......................................................... ± 40 V Gate-Substrate Voltage ......................................................................... ± 30 V Drain-Source Voltage (SD210DE) ....................................... 30 V (SD214DE) ....................................... 20 V Source-Drain Voltage (SD210DE) ....................................... 10 V (SD214DE) ....................................... 20 V Drain-Substrate Voltage (SD210DE) ....................................... 30 V (SD214DE) ....................................... 25 V Source-Substrate Voltage (SD210DE) ....................................... 15 V (SD214DE) ....................................... 25 V Drain Current ........................................................................................ 50 mA Lead Temperature (1/16" from case for 10 seconds) ............................. 3000C Storage Temperature .................................................................... -65 to 1500C Operating Junction Temperature ................................................. -55 to 1250C Power Dissipationa .................................................................................................................................... 300 mW Notes: a. Derate 3 mW/0C above 250C Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Specificationsa Notes: a. TA = 250C unless otherwise noted. b. B is the body (substrate) and V(BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261