SST213

SD-SST211/213/215 Linear Integrated Systems N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Product Summary Features • Ultra-High Speed Switching—tON: 1 ns • Ultra-Low Reverse Capacitance: 0.2 pF • Low Guaranteed rDS @5 V • Low Turn-On Threshold Voltage • N-Channel Enhancement Mode Benefits • High-Speed System Performance • Low Insertion Loss at High Frequencies • Low Transfer Signal Loss • Simple Driver Requirement • Single Supply Operation Applications • Fast Analog Switch • Fast Sample-and-Holds • Pixel-Rate Switching • DAC Deglitchers • High-Speed Driver Description The SD211DE/SST211 series consists of enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for ±5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability. For similar products see: quad array—SD5000/5400 series, and non-Zener protection—SD210DE/214DE. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted) Gate-Drain, Gate-Source Voltage (SD211DE/SST211) ................... -30/25 V (SD213DE/SST213) .................. -15/25 V (SD215DE/SST215) .................. -25/30 V (SD211DE/SST211 ................... -0.3/25 V Gate-Substrate Voltagea (SD213DE/SST213) ................. -0.3/25 V (SD215DE/SST215) ................. -0.3/30 V Drain-Source Voltage (SD211DE/SST211) .......................... 30 V (SD213DE/SST213) ......................... 10 V (SD215DE/SST215) ......................... 20 V Source-Drain Voltage (SD211DE/SST21) ........................... 10 V (SD213DE/SST213) ......................... 10 V (SD215DE/SST215) ......................... 20 V (SD211DE/SST211) .......................... 30 V (SD213DE/SST213) ......................... 15 V (SD215DE/SST215) ......................... 25 V Source-Substrate Voltage (SD211DE/SST211) .......................... 15 V (SD213DE/SST213) ......................... 15 V (SD215DE/SST215) ......................... 25 V Drain Current ........................................................................................ 50 mA Lead Temperature (1/16” from case for 10 seconds) ............................. 3000C Storage Temperature .................................................................... -65 to 1500C Operating Junction Temperature ................................................. -55 to 1250C Power Dissipationa .................................................................................................................................... 300 mW Notes: a. Derate 3 mW/0C above 250C Drain-Substrate Voltage Specificationsa Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Specificationsa Notes: a. TA = 250C unless otherwise noted. b. B is the body (substrate) and V(BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261