LT1123

LT1123 Low Dropout Regulator Driver FEATURES s s s s s s s s s DESCRIPTIO Extremely Low Dropout Low Cost Fixed 5V Output, Trimmed to ±1% 700µA Quiescent Current 3-Pin TO-92 Package 1mV Line Regulation 5mV Load Regulation Thermal Limit 4A Output Current Guaranteed The LT1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier, and a driver circuit capable of sinking up to 125mA from the base of the external PNP pass transistor. The LT1123 is designed to provide a fixed output voltage of 5V. The drive pin of the device can pull down to 2V at 125mA (1.4V at 10mA). This allows a resistor to be used to reduce the base drive available to the PNP and minimize the power dissipation in the LT1123. The drive current of the LT1123 is folded back as the feedback pin approaches ground to further limit the available drive current under short circuit conditions. Total quiescent current for the LT1123 is only 700µA. The device is available in a low cost TO-92 package. TYPICAL APPLICATI 5V Low Dropout Regulator 0.5 SEALED LEAD ACID 5.4 – 7.2V + 10µF* 620Ω 20Ω DRIVE * REQUIRED IF DEVICE IS MORE THAN 6" FROM MAIN FILTER CAPACITOR † DROPOUT VOLTAGE (V) MOTOROLA MJE1123 0.4 0.3 LT1123 FB OUTPUT = 5V/4A 0.2 + GND REQUIRED FOR STABILITY (LARGER VALUES INCREASE STABILITY) 10µF† 0.1 LT1123 TA01 0 0 U Dropout Voltage 1 3 4 2 OUTPUT CURRENT (A) 5 LT1123 TA02 UO 1 LT1123 ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO BOTTOM VIEW 3 DRIVE 2 FB 1 GND Drive Pin Voltage (VDRIVE to Ground) ..................... 30V Feedback Pin Voltage (VFB to Ground) .................... 30V Operating Junction Temperature Range ... 0°C to 125°C Storage Temperature Range ................ –65°C to 150°C Lead Temperature (Soldering, 10 sec.)................ 300°C ORDER PART NUMBER LT1123CZ Z PACKAGE 3-LEAD TO-92 PLASTIC ELECTRICAL CHARACTERISTICS PARAMETER Feedback Voltage CONDITIONS IDRIVE = 10mA, TJ = 25°C 5mA ≤ IDRIVE ≤ 100mA 3V ≤ VDRIVE ≤ 20V Feedback Pin Bias Current Drive Current VFB = 5.00V, 2V ≤ VDRIVE ≤ 15V VFB = 5.20V, 2V ≤ VDRIVE ≤ 15V VFB = 4.80V, VDRIVE = 3V VFB = 0.5V, VDRIVE = 3V, ≤ TJ ≤ 100°C IDRIVE = 10mA, VFB = 4.5V IDRIVE = 125mA, VFB = 4.5V 5V < VDRIVE < 20V ∆IDRIVE = 10 to 100mA q q q q q q MIN 4.90 4.80 TYP 5.00 5.00 300 MAX 5.10 5.20 500 1.0 150 UNITS V V µA mA 125 25 0.45 170 100 1.4 2.0 1.0 –5 0.2 Drive Pin Saturation Voltage Line Regulation Load Regulation Temperature Coefficient of VOUT ±20 –50 mV/°C The q indicates specifications which apply over the full operating temperature range. SI PLIFIED BLOCK DIAGRA DRIVE – CURRENT LIMIT THERMAL LIMIT FB + 5V GROUND LT1123 SBD01 2 U V mV mV W U W U WW W W LT1123 TYPICAL PERFOR A CE CHARACTERISTICS Feedback Pin Bias Current vs Temperature 400 600 MINIMUM DRIVE PIN CURRENT (µA) VFB = 5V FEEDBACK PIN BIAS CURRENT (µA) 300 400 300 200 100 0 DRIVE CURRENT (mA) 200 100 0 25 50 75 100 TEMPERATURE (°C) 125 LT1123 G01 Feedback Pin Bias Current vs Feedback Pin Voltage 500 FEEDBACK PIN BIAS CURRENT (µA) 2.5 400 DRIVE PIN VOLTAGE (V) OUTPUT VOLTAGE (V) 300 TJ = 125°C TJ = 25°C 100 TJ = 0°C 0 200 0 1 3 4 2 FEEDBACK PIN VOLTAGE (V) FU CTIO AL DESCRIPTIO The LT1123 is a three pin device designed to be used in conjunction with a discrete PNP transistor to form an inexpensive ultra-low dropout regulator. The device incorporates a trimmed 5V bandgap reference, error amplifier, a current-limited Darlington driver, and an internal thermal limit circuit. The internal circuitry connected to the drive pin is designed to function at the saturation voltage of the Darlington driver. This allows a resistor to be U UW 5 LT1123 G04 Minimum Drive Pin Current vs Temperature 200 VDRIVE = 3V 500 150 Drive Current vs Feedback Pin Voltage VDRIVE = 3V TJ = 25°C TJ = 125°C 100 TJ = – 50°C 50 0 25 50 75 100 TEMPERATURE (°C) 125 0 0 1 5 2 3 4 FEEDBACK PIN VOLTAGE (V) 6 LT1123 G02 LT1123 G03 Drive Pin Saturation Voltage vs Drive Current 5.03 VFB = 4.5V 2.0 TJ = 0°C 1.5 TJ = 125°C 1.0 TJ = 25°C Output Voltage vs Temperature 5.02 5.01 5.00 4.99 4.98 4.97 –50 –25 0.5 0 0 20 80 60 40 100 DRIVE CURRENT (mA) 120 140 0 50 75 25 TEMPERATURE (°C) 100 125 LT1123 G06 LT1123 G05 U U inserted in series with the drive pin. This resistor is used to limit the base drive to the PNP and also to limit the power dissipation in the LT1123. The value of this resistor will be defined by the operating requirements of the regulator circuit. The LT1123 is designed to sink a minimum of 125mA of base current. This is sufficient base drive to form a regulator circuit which can supply output currents up to 4A at a dropout voltage of less than 0.75V. 3 LT1123 PI FU CTIO S Drive Pin: The drive pin serves two functions. It provides current to the LT1123 for its internal circuitry including startup, bias, current limit, thermal limit and a portion of the base drive current for the output Darlington. The sum total of these currents (450µA typical) is equal to the minimum drive current. This current is listed in the specifications as Drive Current with VFB = 5.2V. This is the minimum current required by the drive pin of the LT1123. The second function of the drive pin is to sink the base drive current of the external PNP pass transistor. The available drive current is specified for two conditions. Drive current with VFB = 4.80V gives the range of current available under nominal operating conditions, when the device is regulating. Drive current with VFB = 0.5V gives the range of drive current available with the feedback pin pulled low as it would be during startup or during a short circuit fault. The drive current available when the feedback pin is pulled low is less than the drive current available when the device is regulating (VFB = 5V). This can be seen in the curve of Drive Current vs VFB Voltage in the Typical Performance Characteristic curves. This can provide some foldback in the current limit of the regulator circuit. All internal circuitry connected to the drive pin is designed to operate at the saturation voltage of the Darlington output driver (1.4 – 2V). This allows a resistor to be inserted between the base of the external PNP device and the drive pin. This resistor is used to limit the base drive to the external PNP below the value set internally by the LT1123, and also to help limit power dissipation in the LT1123. The operating voltage range of this pin is from 0V to 30V. Pulling this pin below ground by more than one VBE will forward bias the substrate diode of the device. This condition can only occur if the power supply leads are reversed and will not damage the device if the current is limited to less than 200mA. Feedback Pin (VFB): The feedback pin also serves two functions. It provides a path for the bias current of the reference and error amplifier and contributes a portion of the drive current for the Darlington output driver. The sum total of these currents is the Feedback Pin Bias Current (300µA typical). The second function of this pin is to provide the voltage feedback to the error amplifier. APPLICATI S I FOR ATIO The LT1123 is designed to be used in conjunction with an external PNP transistor. The overall specifications of a regulator circuit using the LT1123 and an external PNP will be heavily dependent on the specifications of the external PNP. While there are a wide variety of PNP transistors available that can be used with the LT1123, the specifications given in typical transistor data sheets are of little use in determining overall circuit performance. Linear Technology has solved this problem by cooperating with Motorola to design and specify the MJE1123. This transistor is specifically designed to work with the LT1123 as the pass element in a low dropout regulator. The specifications of the MJE1123 reflect the capability of the LT1123. For example, the dropout voltage of the MJE1123 is specified up to 4A collector current with base drive currents that the LT1123 is capable of generating (20mA 4 U W U U UO U U to 120mA). Output currents up to 4A with dropout voltages less than 0.75V can be guaranteed. The following sections describe how specifications can be determined for the basic regulator. The charts and graphs are based on the combined characteristics of the LT1123 and the MJE1123. Formulas are included that will enable the user to substitute other transistors that have been characterized. A chart is supplied that lists suggested resistor values for the most popular range of input voltages and output current. BASIC REGULATOR CIRCUIT The basic regulator circuit is shown in Figure 1. The LT1123 senses the voltage at its feedback pin and drives the base of the PNP (MJE1123) in order to maintain the LT1123 APPLICATI S I FOR ATIO output at 5V. The drive pin of the LT1123 can only sink current; RB is required to provide pullup on the base of the PNP. RB must be sized so that the voltage drop caused by the minimum drive pin current is less than the emitter/ base voltage of the external PNP at light loads. The recommended value for RB is 620Ω. For circuits that are required to run at junction temperatures in excess of 100°C the recommended value of RB is 300Ω. VIN RB 620Ω MJE1123 RD DRIVE FB LT1123 VOUT = 5V DROPOUT VOLTAGE (V) + GND 10µF ALUM LT1123 F01 Figure 1. Basic Regulator Circuit DROPOUT VOLTAGE(V) RD is used to limit the drive current available to the PNP and to limit the power dissipation in the LT1123. Limiting the drive current to the PNP will limit the output current of the regulator which will minimize the stress on the regulator circuit under overload conditions. RD is chosen based on the operating requirements of the circuit, primarily dropout voltage and output current. DROPOUT VOLTAGE The dropout voltage of an LT1123 based regulator circuit is determined by the VCE saturation voltage of the discrete PNP when it is driven with a base current equal to the available drive current of the LT1123. The LT1123 can sink up to 150mA of base current (150mA typ., 125mA min.) when output voltage is up near the regulating point (5V). The available drive current of the LT1123 can be reduced by adding a resistor (RD) in series with the drive pin (see the section below on current limit). The MJE1123 is specified for dropout voltage (VCE sat.) at several values of output current and up to 120mA of base drive current. The chart below lists the operating points that can be guaran- U Dropout Voltage DRIVE CURRENT 20mA 50mA 120mA OUTPUT CURRENT 1A 1A 2A 1A 4A DROPOUT VOLTAGE TYP MAX 0.16V 0.3V 0.13V 0.25V 0.25V 0.4V 0.2V 0.35V 0.45V 0.75V 1.0 BASED ON MJE1123 SPECS 0.75 IDRIVE = 120mA 0.50 IDRIVE = 20mA 0.25 IDRIVE = 50mA 0 0 1 2 3 OUTPUT CURRENT (A) 4 LT1123 F02 W U UO Figure 2. Maximum Dropout Voltage 0.75 0.65 0.55 IC = 4A, IB = 0.12A 0.45 0.35 IC = 2A, IB = 0.05A 0.25 0.15 0.05 20 60 80 40 100 CASE TEMPERATURE (°C) 120 IC = 1A, IB = 0.02A LT1123 F03 Figure 3. Dropout Voltage vs Temperature teed by the combined data sheets of the LT1123 and MJE1123. Figure 2 illustrates the chart in graphic form. Although these numbers are only guaranteed by the data sheet at 25°C, Dropout Voltage vs Temperature (Figure 3) clearly shows that the dropout voltage is nearly constant over a wide temperature range. 5 LT1123 APPLICATI SELECTING RD S I FOR ATIO In order to select RD the user should first choose the value of drive current that will give the required value of output current. For circuits using the MJE1123 as a pass transistor this can be done using the graph of Dropout Voltage vs Output Current (Figure 2). For example, 20mA of drive current will guarantee a dropout voltage of 0.3V at 1A of output current. For circuits using transistors other than the MJE1123 the user must characterize the transistor to determine the drive current requirements. In general it is recommended that the user choose the lowest value of drive current that will satisfy the output current requirements. This will minimize the stress on circuit components during overload conditions. Figure 4 can be used to select the value of RD based on the required drive current and the minimum input voltage. Curves are shown for 20mA, 50mA, and 120mA drive current corresponding to the specified base drive currents for the MJE1123. The data for the curves was generated using the following formula: RD = (VIN – VBE – VDRIVE)/(IDRIVE + 1mA) where VIN = the minimum input voltage to the circuit VBE = the maximum emitter/base voltage of the PNP pass transistor VDRIVE = the maximum Drive pin voltage of the LT1123 IDRIVE = the minimum drive current required The current through RB is assumed to be 1mA 1k IDRIVE = 20mA RD 100 IDRIVE = 50mA IDRIVE = 120mA 10 5 6 7 8 9 10 11 12 13 14 15 VIN LT1123 F04 Figure 4. RD Resistor Value 6 U The following assumptions were made in calculating the data for the curves. Resistors are 5% tolerance and the values shown on the curve are nominal. For 20mA drive current assume: VBE = 0.95V at IC = 1A VDRIVE = 1.75V For 50mA drive current assume: VBE = 1.2V at IC = 2A VDRIVE = 1.9V For 120mA drive current assume: VBE = 1.4V at IC = 4A VDRIVE = 2.1V The RD Selection Chart lists the recommended values for RD for the most useful range of input voltage and output current. The chart includes a number for power dissipation for the LT1123 and RD. RD Selection Chart INPUT VOLTAGE 5.5V OUTPUT CURRENT: DROPOUT VOLTAGE: RD Power (LT1123) Power (RD) RD Power (LT1123) Power (RD) RD Power (LT1123) Power (RD) RD Power (LT1123) Power (RD) RD Power (LT1123) Power (RD) RD Power (LT1123) Power (RD) 0 – 1A 0.3V 120Ω 0.05W 0.12W 150Ω 0.05W 0.13W 180Ω 0.06W 0.16W 240Ω 0.06W 0.17W 270Ω 0.20W 0.07W 330Ω 0.22W 0.07W 0 – 2A 0.4V 43Ω 0.14W 0.32W 51Ω 0.15W 0.35W 75Ω 0.14W 0.36W 91Ω 0.15W 0.42W 110Ω 0.16W 0.47W 130Ω 0.17W 0.52W 0 – 4A 0.75V –– –– –– 20Ω 0.37W 0.76W 27Ω 0.38W 0.89W 36Ω 0.38W 0.97W 43Ω 0.41W 1.11W 51Ω 0.43W 1.25W 6.0V 7.0V 8.0V 9.0V 10.0V W U UO Note that in some conditions RD may be replaced with a short. This is possible in circuits where an overload is unlikely and the input voltage and drive requirements are low. See the section on Thermal Considerations for more information. LT1123 APPLICATI S I FOR ATIO CURRENT LIMIT For regulator circuits using the LT1123, current limiting is achieved by limiting the base drive to the external PNP pass transistor. This means that the actual system current limit will be a function of both the current limit of the LT1123 and the Beta of the external PNP. Beta-based current limit schemes are normally not practical because of uncertainties in the Beta of the pass transistor. Here the drive characteristics of the LT1123 combined with the Beta characteristics of the MJE1123 can provide reliable Beta-based current limiting. This is shown in Figure 5 where the current limit of 30 randomly selected transistors is plotted. The spread of current limit is reasonably well controlled. 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 4.00 4.25 4.50 4.75 5.00 5.25 5.50 5.75 6.00 OUTPUT CURRENT (A) LT1123 F05 NUMBER OF UNITS Figure 5. Short Circuit Current for 30 Random Devices 9 8 7 6 IC (A) RD (Ω) 5 4 3 2 1 0 0 0.05 IB (A) LT1123 F06 0.10 0.15 Figure 6. MJE1123 IC vs IB U The curve in Figure 6 can be used to determine the range of current limit of an LT1123 regulator circuit using an MJE1123 as a pass transistor. The curve was generated using the Beta versus IC curve of the MJE1123. The minimum and maximum value curves are extrapolated from the minimum and maximum Beta specifications. THERMAL CONSIDERATIONS The thermal characteristics of three components need to be considered; the LT1123, the pass transistor, and RD. Power dissipation should be calculated based on the worst case conditions seen by each component during normal operation. The worst case power dissipation in the LT1123 is a function of drive current, supply voltage, and the value of RD. Worst case dissipation for the LT1123 occurs when the drive current is equal to approximately one half of its maximum value. Figure 7 plots the worst case power dissipation in the LT1123 versus RD and VIN. The graph was generated using the following formula: PD W U UO (VIN – VBE )2 ;R = 4RD D > 10Ω where VBE = the emitter/base voltage of the PNP pass transistor (assumed to be 0.6V) For some operating conditions RD may be replaced with a short. This is possible in applications where the operating 1k 0.1W 0.2W 100 0.3W 0.4W 0.5W 0.7W 10 5 6 7 8 9 10 11 12 13 14 15 VIN (V) LT1123 F07 Figure 7. Power in LT1123 7 LT1123 APPLICATI S I FOR ATIO requirements (input voltage and drive current) are at the low end and the output will not be shorted. For RD = 0 the following formula may be used to calculate the maximum power dissipation in the LT1123. RD (Ω) PD = (VIN – VBE)(IDRIVE) where VIN = maximum input voltage VBE = emitter/base voltage of PNP IDRIVE = required maximum drive current The maximum junction temperature rise above ambient for the LT1123 will be equal to the worst case power dissipation multiplied by the thermal resistance of the device. The thermal resistance of the device will depend upon how the device is mounted, and whether a heat sink is used. Measurements show that one of the most effective ways of heat sinking the TO-92 package is by utilizing the PC board traces attached to the leads of the package. The table below lists several methods of mounting and the measured value of thermal resistance for each method. All measurements were done in still air. THERMAL RESISTANCE Package alone .............................................................................. 220°C/W Package soldered into PC board with plated through holes only .............................................................................. 175°C/W Package soldered into PC board with 1/4 sq. in. of copper trace per lead .................................................................................145°C/W Package soldered into PC board with plated through holes in board, no extra copper trace, and a clip-on type heat sink: Thermalloy type 2224B .............................................. 160°C/W Aavid type 5754 .......................................................... 135°C/W The maximum operating junction temperature of the LT1123 is 125°C. The maximum operating ambient temperature will be equal to 125°C minus the maximum junction temperature rise above ambient. The worst case power dissipation in RD needs to be calculated so that the power rating of the resistor can be determined. The worst case power in the resistor will occur when the drive current is at a maximum. Figure 8 plots the required power rating of RD versus supply voltage and resistor value. Power dissipation can be calculated using the following formula: PR D (VIN – VBE – VDRIVE )2 = R 8 U 1k 0.25W 0.5W 1W 100 2W 10 5 6 7 8 9 10 11 12 13 14 15 VIN (V) LT1123 F08 W U UO Figure 8. Power in RD where VBE = emitter/base voltage of the PNP pass transistor VDRIVE = voltage at the drive pin of the LT1123 = VSAT of the drive pin in the worst case The worst case power dissipation in the PNP pass transistor is simply equal to: PMAX = (VIN – VOUT)(IOUT) where VIN = Maximum VIN IOUT = Maximum IOUT The thermal resistance of the MJE1123 is equal to: 70°C/W Junction to Ambient (no heat sink) 1.67°C/W Junction to Case The PNP will normally be attached to either a chassis or a heat sink so the actual thermal resistance from junction to ambient will be the sum of the PNP's junction to case thermal resistance and the thermal resistance of the heat sink or chassis. For non-standard heat sinks the user will need to determine the thermal resistance by experiment. The maximum junction temperature rise above ambient for the PNP pass transistor will be equal to the maximum power dissipation times the thermal resistance, junction to ambient, of the PNP. The maximum operating junction temperature of the MJE1123 is 150°C. The maximum operating ambient temperature for the MJE1123 will be equal to 150°C minus the maximum junction temperature rise. LT1123 APPLICATI S I FOR ATIO THERMAL LIMITING The thermal limit of the LT1123 can be used to protect both the LT1123 and the PNP pass transistor. This is accomplished by thermally coupling the LT1123 to the power transistor. There are clip type heat sinks available for the TO-92 package that will allow the LT1123 to be mounted to the same heat sink as the PNP pass transistor. One example is manufactured by IERC (part #RUR67B1CB). The LT1123 should be mounted as close as possible to the PNP. If the output of the regulator circuit can be shorted, heat sinking must be adequate to limit the rate of temperature rise of the power device to approximately 50°C/ minute. This can be accomplished with a fairly small heat sink, on the order of 3 – 4 square inches of surface area. DESIGN EXAMPLE Given the following operating requirements: 5.5V < VIN < 7V IOUTMAX = 1.5A Max ambient temp. = 70°C VOUT = 5V 1. The first step is to determine the required drive current. This can be found from the Maximum Dropout Voltage curve. 50mA of drive current will guarantee 0.4V dropout at an output current of 2A. This satisfies our requirements. IDRIVE = 50mA 2. The next step is to determine the value of RD. Based on 50mA of drive current and a minimum input voltage of 5.5V, we can select RD from the graph of Figure 4. From the graph the value of RD is equal to 50Ω, so we should use the next lowest 5% value which is 47Ω. RD = 47Ω 3. We can now look at the thermal requirements of the circuit. Worst case power in the LT1123 will be equal to: (VINMAX – VBE )2 4RD U Given: VINMAX = 7V, VBE = 0.6V, RD = 47Ω Then: PMAX (LT1123) = 0.22W. Assuming a thermal resistance of 150°C/W, the maximum junction temperature rise above ambient will be equal to (PMAX)(150°C/W) = 33°C. The maximum operating junction temperature will be equal to the maximum ambient temperature plus the junction temperature rise above ambient. In this case we have (maximum ambient = 70°C) plus (junction temperature rise = 33°C) is equal to 103°C. This is well below the maximum operating junction temperature of 125°C for the LT1123. The power rating for RD can be found from the plot of Figure 8 using VIN = 7V and RD = 47Ω. From the plot, RD should be sized to dissipate a minimum of 1/2W. The worst case power dissipation, for normal operation, in the MJE1123 will be equal to: (VINMAX – VOUT)(IOUTMAX) = (7V – 5V)(1.5A) = 3W The maximum operating junction temperature of the MJE1123 is 150°C. The difference between the maximum operating junction temperature of 150°C and the maximum ambient temperature of 70°C is 80°C. The device must be mounted to a heat sink which is sized such that the thermal resistance from the junction of the MJE1123 to ambient is less than 80°C/3W = 26.7°C/W. It is recommended that the LT1123 be thermally coupled to the MJE1123 so that the thermal limit circuit of the LT1123 can protect both devices. In this case the ambient temperature for the LT1123 will be equal to the temperature of the heat sink. The heat sink temperature, under normal operating conditions, will have to be limited such that the maximum operating junction temperature of the LT1123 is not exceeded. Refer to Linear Technology’s list of Suggested Manufacturers of Specialized Components for information on where to find the required heat sinks, resistors and capacitors. This listing is available through Linear Technology’s marketing department. W U UO 9 LT1123 TYPICAL APPLICATI VIN Isolated Feedback for Switching Regulators 600Ω SWITCHING REGULATOR DRIVE LT1123 FB GND LT1123 TA03 5V Regulator with Anti-Sat Miminizes Ground Pin Current in Dropout VIN MJE1123 620Ω VIN 2N2907 1k LT1123 TA12 DRIVE LT1123 FB GND 5V OUTPUT 5V Shunt Regulator or Voltage Clamp 1k IRL510 DRIVE DRIVE 20Ω LT1123 FB GND 10 UO S 5V/2A Regulator with Remote Sensing MJE1123 75Ω 7V DRIVE LT1123 FB 100Ω REMOTE LOAD + 100µF OR LARGER 1k GND 100Ω LT1123 TA08 5V OUTPUT Undervoltage Indicator On for VIN < (VZ +5V) 1k 2.4k VZ 1N4148 1N4148 DRIVE LT1123 FB GND 470k + Battery Backup Regulator INTERNAL BATTERY 6V GEL CELL 10µF ALUM LT1123 TA04 + + 10µF ALUM 620Ω MJE1123 620Ω MJE1123 EXTERNAL POWER 10µF ALUM 1N4148 1N4148 + 10µF ALUM LT1123 FB GND 5V OUTPUT + 10µF ALUM LT1123 TA07 LT1123 TA11 LT1123 TYPICAL APPLICATI 6V GEL CELL 50k MJE1123 HI = ON LO = OFF 1/6 MPSA12 MM74C906 (OPEN COLLECTOR OUTPUT) HI = ON LO = OFF 1/6 MM74C906 (OPEN COLLECTOR OUTPUT) Si9400DY* 68Ω DRIVE LT1123 FB GND LT1123 TA09 5V/1A Regulator with Shutdown 620Ω DRIVE LT1123 FB GND 5V/1A OUTPUT Adjusting VOUT 5V Regulator Powered by Multiple Battery Packs* 620Ω VIN > VOUT RD DRIVE LT1123 FB GND *VOUT = (5V + VZ) LT1123 TA13 Adjusting VOUT 620Ω VIN > VOUT RD DRIVE LT1123 FB GND *VOUT = (5V + (IFB • RX)) IFB ≈ 300µA LT1123 TA14 IFB Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of circuits as described herein will not infringe on existing patent rights. UO RX S 5V/1A Regulator with Shutdown + 10µF ALUM 6V GEL CELL 620Ω 1M + 5V/1A OUTPUT 10µF ALUM *P-CHANNEL, LOGIC LEVEL + 10µF ALUM LT1123 TA10 MJE1123 VOUT* VZ + 5-CELL NiCAD BATTERY PACK (6V) 10µF ALUM R1 1.5k + + + 10µF 10V MJE1123 R2 820Ω DRIVE LT1123 FB 5V/1A OUTPUT + GND 10µF 10V MJE1123 VOUT* * PACKS WILL SHARE CURRENT LT1123 TA06 + 10µF ALUM 11 LT1123 PACKAGE DESCRIPTIO 0.060 ± 0.005 (1.524± 0.127) DIA 0.180 ± 0.005 (4.572 ± 0.127) 0.060 ± 0.010 (1.524 ± 0.254) 0.90 (2.286) NOM 0.180 ± 0.005 (4.572 ± 0.127) 0.500 (12.79) MIN 0.050 (1.270) MAX UNCONTROLLED LEAD DIA 0.020 ± 0.003 (0.508 ± 0.076) 0.016 ± 0.03 (0.406 ± 0.076) 0.050 ± 0.005 (1.270 ± 0.127) 12 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7487 (408) 432-1900 q FAX: (408) 434-0507 q TELEX: 499-3977 U Dimensions in inches (millimeters) unless otherwise noted. Z Package 3-Lead TO-92 0.140 ± 0.010 (3.556 ± 0.127) 5° NOM 10° NOM 0.015 ± 0.02 (0.381 ± 0.051) Z3 1191 TJMAX 125°C θJA 220°C/W SEE DATA IN THERMAL CONSIDERATIONS LT/GP 0192 10K REV 0 © LINEAR TECHNOLOGY CORPORATION 1992