LT1208

LT1208/LT1209 Dual and Quad 45MHz, 400V/µs Op Amps FEATURES s s s s s s s s s s DESCRIPTIO 45MHz Gain-Bandwidth 400V/µs Slew Rate Unity-Gain Stable 7V/mV DC Gain, RL = 500Ω 3mV Maximum Input Offset Voltage ±12V Minimum Output Swing into 500Ω Wide Supply Range: ±2.5V to ±15V 7mA Supply Current per Amplifier 90ns Settling Time to 0.1%, 10V Step Drives All Capacitive Loads APPLICATI s s s s s s S The LT1208/LT1209 are dual and quad very high speed operational amplifiers with excellent DC performance. The LT1208/LT1209 feature reduced input offset voltage and higher DC gain than devices with comparable bandwidth and slew rate. Each amplifier is a single gain stage with outstanding settling characteristics. The fast settling time makes the circuit an ideal choice for data acquisition systems. Each output is capable of driving a 500Ω load to ±12V with ±15V supplies and a 150Ω load to ±3V on ±5V supplies. The amplifiers are also capable of driving large capacitive loads which make them useful in buffer or cable driver applications. The LT1208/LT1209 are members of a family of fast, high performance amplifiers that employ Linear Technology Corporation’s advanced bipolar complementary processing. Wideband Amplifiers Buffers Active Filters Video and RF Amplification Cable Drivers Data Acquisition Systems TYPICAL APPLICATI 1MHz, 4th Order Butterworth Filter 909Ω 1.1k 909Ω 47pF VIN 220pF 470pF + – + – 2.67k 1/2 LT1208 1.1k 2.21k 22pF 1/2 LT1208 VOUT 1208/09 TA01 U Inverter Pulse Response 1208/09 TA02 UO UO 1 LT1208/LT1209 ABSOLUTE AXI U RATI GS Maximum Junction Temperature Plastic Package ............................................. 150°C Storage Temperature Range ................ – 65°C to 150°C Lead Temperature (Soldering, 10 sec)................. 300°C Total Supply Voltage (V + to V –) .............................. 36V Differential Input Voltage ........................................ ± 6V Input Voltage ........................................................... ±VS Output Short-Circuit Duration (Note 1) ........... Indefinite Operating Temperature Range LT1208C/LT1209C .......................... – 40°C to 85°C PACKAGE/ORDER I FOR ATIO TOP VIEW OUT A 1 –IN A 2 +IN A 3 V – 8 A B 7 6 5 V+ OUT B –IN B +IN B ORDER PART NUMBER LT1208CN8 4 N8 PACKAGE 8-LEAD PLASTIC DIP TJMAX = 150°C, θJA = 100°C/W CONTACT FACTORY FOR MILITARY/883B PARTS TOP VIEW OUT A 1 –IN A 2 +IN A 3 V+ 4 +IN B 5 –IN B 6 OUT B 7 B C A D 14 OUT D 13 –IN D 12 +IN D 11 V– ORDER PART NUMBER LT1209CN 10 +IN C 9 8 –IN C OUT C N PACKAGE 14-LEAD PLASTIC DIP TJMAX = 150°C, θJA = 70°C/W ELECTRICAL CHARACTERISTICS SYMBOL VOS PARAMETER Input Offset Voltage VS = ±15V, TA = 25°C, RL = 1k, VCM = 0V, unless otherwise noted. MIN q CONDITIONS VS = ± 5V (Note 2) 0°C to 70°C VS = ± 15V (Note 2) 0°C to 70°C VS = ± 5V and VS = ± 15V 0°C to 70°C VS = ± 5V and VS = ± 15V 0°C to 70°C f = 10kHz f = 10kHz IOS IB en in Input VOS Drift Input Offset Current Input Bias Current Input Noise Voltage Input Noise Current 2 U U W WW U W TOP VIEW OUT A 1 –IN A 2 +IN A 3 V– 4 B 5 +IN B A 6 8 7 V+ OUT B –IN B ORDER PART NUMBER LT1208CS8 S8 PART MARKING 1208 ORDER PART NUMBER LT1209CS S8 PACKAGE 8-LEAD PLASTIC SOIC TJMAX = 150°C, θJA = 150°C/W TOP VIEW OUT A 1 –IN A 2 +IN A 3 V+ 4 +IN B 5 –IN B 6 OUT B 7 NC 8 B C A D 16 OUT D 15 –IN D 14 +IN D 13 V – 12 +IN C 11 –IN C 10 OUT C 9 NC S PACKAGE 16-LEAD PLASTIC SOIC TJMAX = 150°C, θJA = 100°C/W TYP 0.5 1.0 MAX 3.0 4.0 5.0 6.0 400 600 8 9 UNITS mV mV mV mV µV/°C nA nA µA µA nV/√Hz pA/√Hz q 25 100 q 4 q 22 1.1 LT1208/LT1209 ELECTRICAL CHARACTERISTICS SYMBOL RIN CIN CMRR PSRR PARAMETER Input Resistance Input Capacitance Common-Mode Rejection Ratio Power Supply Rejection Ratio Input Voltage Range AVOL Large-Signal Voltage Gain CONDITIONS VCM = ± 12V Differential VS = ±15V, TA = 25°C, RL = 1k, VCM = 0V, unless otherwise noted. MIN 20 TYP 40 250 2 98 84 ±13 ±3 7 7 3 13.3 3.3 40 40 400 250 6.4 45 34 5 7 30 20 5 7 90 1.30 0.09 1.8 0.1 2.5 –100 7 q MAX UNITS MΩ kΩ pF dB dB dB dB V V V/mV V/mV V/mV V/mV V/mV ±V ±V mA mA V/µs V/µs V/µs V/µs MHz MHz MHz ns ns % % ns ns ns % % Deg Deg Ω dB mA mA VOUT IOUT SR Output Swing Output Current Slew Rate GBW tr, tf Full Power Bandwidth Gain-Bandwidth Rise Time, Fall Time Overshoot Propagation Delay ts Settling Time Differential Gain Differential Phase RO IS Output Resistance Crosstalk Supply Current VS = ± 15V, VCM = ± 12V; VS = ± 5V, VCM = ± 2.5V, 0°C to 70°C VS = ± 5V to ±15V 0°C to 70°C VS = ± 15V VS = ± 5V VS = ± 15V, VOUT = ±10V, RL = 500Ω 0°C to 70°C VS = ± 5V, VOUT = ± 2.5V, RL = 500Ω 0°C to 70°C VS = ± 5V, VOUT = ± 2.5V, RL = 150Ω VS = ± 15V, RL = 500Ω, 0°C to 70°C VS = ± 5V, RL = 150Ω, 0°C to 70°C VS = ± 15V, VOUT = ± 12V, 0°C to 70°C VS = ± 5V, VOUT = ± 3V, 0°C to 70°C VS = ± 15V, AVCL = – 2, (Note 3) 0°C to 70°C VS = ± 5V, AVCL = – 2, (Note 3) 0°C to 70°C 10V Peak, (Note 4) VS = ± 15V, f = 1MHz VS = ± 5V, f = 1MHz VS = ± 15V, AVCL = 1, 10% to 90%, 0.1V VS = ± 5V, AVCL = 1, 10% to 90%, 0.1V VS = ± 15V, AVCL = 1, 0.1V VS = ± 5V, AVCL = 1, 0.1V VS = ± 15V, 50% VIN to 50%VOUT VS = ± 5V, 50% VIN to 50%VOUT VS = ± 15V, 10V Step, VS = ± 5V, 5V Step, 0.1% f = 3.58MHz, RL = 150Ω f = 3.58MHz, RL = 1k f = 3.58MHz, RL = 150Ω f = 3.58MHz, RL = 1k AVCL = 1, f = 1MHz VOUT = ± 10V, RL = 500Ω Each Amplifier, VS = ± 5V and VS = ±15V 0°C to 70°C q q q q q q q q q q 86 83 76 75 ±12 ± 2.5 3.3 2.5 2.5 2.0 12.0 3.0 24 20 250 200 150 130 – 94 9 10.5 The q denotes the specifications which apply over the full operating temperature range. Note 1: A heat sink may be required to keep the junction temperature below absolute maximum when the output is shorted indefinitely. Note 2: Input offset voltage is tested with automated test equipment and is exclusive of warm-up drift. Note 3: Slew rate is measured in a gain of –2. For ±15V supplies measure between ± 10V on the output with ± 6V on the input. For ± 5V supplies measure between ± 2V on the output with ±1.75V on the input. Note 4: Full power bandwidth is calculated from the slew rate measurement: FPBW = SR/2πVP. 3 LT1208/LT1209 TYPICAL PERFOR A CE CHARACTERISTICS Input Common-Mode Range vs Supply Voltage 20 12 TA = 25°C ∆VOS < 1mV SUPPLY CURRENT (mA) MAGNITUDE OF INPUT VOLTAGE (V) OUTPUT VOLTAGE SWING (V) 15 10 +VCM 5 –VCM 0 0 5 10 15 SUPPLY VOLTAGE (±V) 20 1208/09 G01 Output Voltage Swing vs Resistive Load 30 OUTPUT VOLTAGE SWING (VP-P) 25 20 15 10 5 0 10 TA = 25°C ∆VOS = 30mV INPUT BIAS CURRENT (µA) VS = ±15V OPEN-LOOP GAIN (dB) VS = ±5V 100 1k LOAD RESISTANCE (Ω) Input Bias Current vs Temperature 5.00 4.75 VS = ±15V IB+ + IB– IB = 2 OUTPUT SHORT-CIRCUIT CURRENT (mA) INPUT VOLTAGE NOISE (nV/√Hz) INPUT BIAS CURRENT (µA) 4.50 4.25 4.00 3.75 3.50 –50 –25 25 75 0 50 TEMPERATURE (°C) 4 UW 10k 1208/09 G04 Supply Current vs Supply Voltage and Temperature 20 125°C Output Voltage Swing vs Supply Voltage TA = 25°C RL = 500Ω ∆VOS = 30mV 15 +VSW 10 –VSW 5 10 8 6 25°C –55°C 4 2 0 0 5 10 15 SUPPLY VOLTAGE (±V) 20 1208/09 G02 0 0 5 10 15 SUPPLY VOLTAGE (±V) 20 1208/09 G03 Input Bias Current vs Input Common-Mode Voltage 5.0 VS = ±15V TA = 25°C I + + IB – IB = B 2 Open-Loop Gain vs Resistive Load 100 TA = 25°C 90 4.5 80 VS = ±15V 4.0 70 VS = ±5V 3.5 60 3.0 –15 50 –10 –5 0 5 10 INPUT COMMON-MODE VOLTAGE (V) 15 10 100 1k LOAD RESISTANCE (Ω) 10k 1208/09 G06 1208/09 G05 Output Short-Circuit Current vs Temperature 55 VS = ± 5V 50 45 40 SOURCE 35 30 25 –50 SINK Input Noise Spectral Density 10000 VS = ± 15V TA = 25°C AV = 101 RS = 100k 10 100 INPUT CURRENT NOISE (pA/√Hz) 1000 in 100 en 1 100 125 –25 25 75 0 50 TEMPERATURE (°C) 100 125 10 10 100 1k 10k FREQUENCY (Hz) 0.1 100k 1208/09 G09 1208/09 G07 1208/09 G08 LT1208/LT1209 TYPICAL PERFOR A CE CHARACTERISTICS Crosstalk vs Frequency –20 –30 –40 COMMON-MODE REJECTION RATIO (dB) POWER SUPPLY REJECTION RATIO (dB) TA = 25°C VIN = 0dBm AV = 1 CROSSTALK (dB) –50 –60 –70 –80 –90 –100 –110 –120 100k VS = ± 5V RL = 500Ω VS = ± 15V RL = 1k 1M 10M FREQUENCY (Hz) Voltage Gain and Phase vs Frequency 80 100 10 8 VOLTAGE GAIN (dB) OUTPUT SWING (V) VS = ±15V 40 60 VOLTAGE MAGNITUDE (dB) 60 VS = ±5V 20 VS = ±5V VS = ±15V 0 TA = 25°C –20 100 1k 1M 10k 100k FREQUENCY (Hz) 10M Closed-Loop Output Impedance vs Frequency 100 VS = ±15V TA = 25°C AV = +1 OUTPUT IMPEDANCE (Ω) 10 GAIN-BANDWIDTH (MHz) SLEW RATE (V/µs) 1 0.1 0.01 10k 100k 1M 10M FREQUENCY (Hz) UW 1208/09 G10 Power Supply Rejection Ratio vs Frequency 100 VS = ±15V TA = 25°C 80 +PSRR 60 –PSRR 40 120 100 80 60 40 20 0 Common-Mode Rejection Ratio vs Frequency VS = ±15V TA = 25°C 20 100M 0 100 1k 10k 100k 1M FREQUENCY (Hz) 10M 100M 1k 10k 100k 1M FREQUENCY (Hz) 10M 100M 1208/09 G11 1208/09 G12 Output Swing vs Settling Time 10 8 6 4 2 0 –2 –4 –6 –8 –10 0 25 75 100 50 SETTLING TIME (ns) 125 1208/09 G14 Frequency Response vs Capacitive Load VS = ±15V TA = 25°C AV = –1 C = 100pF C = 50pF 80 PHASE MARGIN (DEG) 6 4 2 0 –2 –4 –6 –8 VS = ±15V TA = 25°C 10mV SETTLING AV = 1 AV = – 1 AV = 1 AV = – 1 40 C=0 C = 500pF C = 1000pF 20 0 100M –10 1M 10M FREQUENCY (Hz) 100M 1208/09 G15 1208/09 B13 Gain-Bandwidth vs Temperature 48 VS = ±15V 47 46 45 44 43 42 –50 450 400 500 Slew Rate vs Temperature VS = ±15V AV = – 2 –SR +SR 350 300 250 200 –50 100M 1208/09 G16 –25 25 75 0 50 TEMPERATURE (°C) 100 125 –25 25 75 0 50 TEMPERATURE (°C) 100 125 1208/09 G17 1208/09 G18 5 LT1208/LT1209 TYPICAL PERFOR A CE CHARACTERISTICS Gain-Bandwidth and Phase Margin vs Supply Voltage 60 TA = 25°C 55 PHASE MARGIN GAIN-BANDWIDTH (MHz) 50 45 40 35 30 GAIN BANDWIDTH 25 20 0 10 5 15 SUPPLY VOLTAGE (±V) 20 1208/09 G19 58 56 54 52 50 48 46 500 PHASE MARGIN (DEG) 400 – SR +SR 300 TOTAL HARMONIC DISTORTION (%) SLEW RATE (V/µs) APPLICATI S I FOR ATIO Layout and Passive Components As with any high speed operational amplifier, care must be taken in board layout in order to obtain maximum performance. Key layout issues include: use of a ground plane, minimization of stray capacitance at the input pins, short lead lengths, RF-quality bypass capacitors located close to the device (typically 0.01µF to 0.1µF), and use of low ESR bypass capacitors for high drive current applications (typically 1µF to 10µF tantalum). Sockets should be avoided when maximum frequency performance is required, although low profile sockets can provide reasonable performance up to 50MHz. For more details see Design Note 50. The parallel combination of the feedback resistor and gain setting resistor on the inverting input combine with the input capacitance to form a pole which can cause peaking. If feedback resistors greater than 5k are used, a parallel capacitor of value CF ≥ RG × CIN/RF should be used to cancel the input pole and optimize dynamic performance. For unity-gain applications where a large feedback resistor is used, CF should be greater than or equal to CIN. 6 U W UW Slew Rate vs Supply Voltage 62 60 600 TA = 25°C AV = –1 Total Harmonic Distortion vs Frequency 0.01 TA = 25°C VOUT = 3VRMS RL = 500Ω 200 AV = –1 AV = 1 100 0 10 5 15 SUPPLY VOLTAGE (±V) 20 1208/09 G20 0.001 10 100 1k 10k FREQUENCY (Hz) 100k 1208/09 G21 U UO Capacitive Loading The LT1208/LT1209 amplifiers are stable with capacitive loads. This is accomplished by sensing the load induced output pole and adding compensation at the amplifier gain node. As the capacitive load increases, both the bandwidth and phase margin decrease so there will be peaking in the frequency domain and in the transient response. The photo of the small-signal response with 1000pF load shows 50% peaking. The large-signal response with a 10,000pF load shows the output slew rate being limited by the short-circuit current. To reduce peaking with capacitive loads, insert a small decoupling resistor between the output and the load, and add a capacitor between the output and inverting input to provide an AC feedback path. Coaxial cable can be driven directly, but for best pulse fidelity the cable should be doubly terminated with a resistor in series with the output. LT1208/LT1209 APPLICATI S I FOR ATIO Small-Signal Capacitive Loading AV = – 1 CL = 1000pF 1208/09 AI01 Large-Signal Capacitive Loading Small-Signal Transient Response AV = 1 CL = 10,000pF 1208/09 AI02 Input Considerations Resistors in series with the inputs are recommended for the LT1208/LT1209 in applications where the differential input voltage exceeds ±6V continuously or on a transient basis. An example would be in noninverting configurations with high input slew rates or when driving heavy capacitive loads. The use of balanced source resistance at each input is recommended for applications where DC accuracy must be maximized. Transient Response The LT1208/LT1209 gain-bandwidth is 45MHz when measured at 100kHz. The actual frequency response in unitygain is considerably higher than 45MHz due to peaking AV = – 1 U caused by a second pole beyond the unity-gain crossover. This is reflected in the 50° phase margin and shows up as overshoot in the unity-gain small-signal transient response. Higher noise gain configurations exhibit less overshoot as seen in the inverting gain of one response. The large-signal response in both inverting and noninverting gain show symmetrical slewing characteristics. Normally the noninverting response has a much faster rising edge due to the rapid change in input commonmode voltage which affects the tail current of the input differential pair. Slew enhancement circuitry has been added to the LT1208/LT1209 so that the falling edge slew rate is balanced. AV = 1 1208/09 AI03 W U UO Small-Signal Transient Response 1208/09 AI04 7 LT1208/LT1209 APPLICATI S I FOR ATIO Large-Signal Transient Response AV = 1 1208/09 AI04 Large-Signal Transient Response AV = – 1 1208/09 AI06 Low Voltage Operation The LT1208/LT1209 are functional at room temperature with only 3V of total supply voltage. Under this condition, however, the undistorted output swing is only 0.8VP-P . A more realistic condition is operation at ± 2.5V supplies (or 5V and ground). Under these conditions, at room temperature, the typical input common-mode range is 1.9V to –1.3V (for a VOS change of 1mV), and a 5MHz, 2VP-P sine wave can be faithfully reproduced. With 5V total supply voltage the gain-bandwidth is reduced to 26MHz and the slew rate is reduced to 135V/µs. 8 U Power Dissipation The LT1208/LT1209 combine high speed and large output current drive in small packages. Because of the wide supply voltage range, it is possible to exceed the maximum junction temperature under certain conditions. Maximum junction temperature (TJ) is calculated from the ambient temperature (TA) and power dissipation (PD) as follows: LT1208CN8: LT1208CS8: LT1209CN: LT1209CS: TJ = TA + (PD × 100°C/W) TJ = TA + (PD × 150°C/W) TJ = TA + (PD × 70°C/W) TJ = TA + (PD × 100°C/W) Maximum power dissipation occurs at the maximum supply current and when the output voltage is at 1/2 of either supply voltage (or the maximum swing if less than 1/2 supply voltage). For each amplifier PDMAX is as follows: W U UO PDMAX = (V + – V –)(ISMAX) + (0.5V+)2 RL Example: LT1208 in S8 at 70°C, VS = ±10V, RL = 500Ω PDMAX = (20V)(10.5mA) + (5V)2 = 260mW 500Ω TJ = 70°C + (2 × 260mW)(150°C/W) = 148°C DAC Current-to-Voltage Converter The wide bandwidth, high slew rate and fast settling time of the LT1208/LT1209 make them well-suited for currentto-voltage conversion after current output D/A converters. A typical application with a DAC-08 type converter (fullscale output of 2mA) uses a 5k feedback resistor. A 7pF compensation capacitor across the feedback resistor is used to null the pole at the inverting input caused by the DAC output capacitance. The combination of the LT1208/ LT1209 and DAC settles to less than 40mV (1LSB) in 140ns for a 10V step. LT1208/LT1209 TYPICAL APPLICATI DAC Current-to-Voltage Converter 7pF VIN 5k DAC-08 TYPE – 1/2 LT1208 VOUT R2 1k + 0.1µF 5k 1 LSB SETTLING = 140ns 1208/09 TA04 VIN UO R1 10k VIN AV = 1k S Cable Driving + 1/2 LT1208 R3 75Ω 75Ω CABLE VOUT R4 75Ω – R1 1k 1208/09 TA06 Instrumentation Amplifier R5 220Ω R2 1k R4 10k – 1/2 LT1208 R3 1k – 1/2 LT1208 VOUT – + + + + ( R2 + R3 ) + R2R5R3 R1 R4 = 102 1208/09 TA03 R4 1+ 1 R3 2 TRIM R5 FOR GAIN TRIM R1 FOR COMMON-MODE REJECTION BW = 430kHz Full-Wave Rectifier 1N4148 – 1/2 LT1208 + 1k 1k 1k 1N4148 500Ω – 1/2 LT1208 VOUT + 1208/09 TA05 9 LT1208/LT1209 SI PLIFIED SCHE ATIC V+ +IN V– 1208/09 SS PACKAGE DESCRIPTIO 0.300 – 0.320 (7.620 – 8.128) 0.009 – 0.015 (0.229 – 0.381) 0.065 (1.651) TYP 0.125 (3.175) MIN 0.020 (0.508) MIN ( +0.025 0.325 –0.015 +0.635 8.255 –0.381 ) 0.045 ± 0.015 (1.143 ± 0.381) 0.100 ± 0.010 (2.540 ± 0.254) 0.010 – 0.020 × 45° (0.254 – 0.508) 0.008 – 0.010 (0.203 – 0.254) 0.016 – 0.050 0.406 – 1.270 0.053 – 0.069 (1.346 – 1.752) 0.004 – 0.010 (0.101 – 0.254) 0.228 – 0.244 (5.791 – 6.197) 0°– 8° TYP 10 U W W BIAS 1 –IN BIAS 2 OUT Dimensions in inches (millimeters) unless otherwise noted. N8 Package 8-Lead Plastic DIP 0.045 – 0.065 (1.143 – 1.651) 0.130 ± 0.005 (3.302 ± 0.127) 0.400 (10.160) MAX 8 7 6 5 0.250 ± 0.010 (6.350 ± 0.254) 1 2 3 4 0.018 ± 0.003 (0.457 ± 0.076) N8 0392 S8 Package 8-Lead Plastic SOIC 8 0.189 – 0.197 (4.801 – 5.004) 7 6 5 0.014 – 0.019 (0.355 – 0.483) 0.050 (1.270) BSC 0.150 – 0.157 (3.810 – 3.988) 1 2 3 4 SO8 0392 LT1208/LT1209 PACKAGE DESCRIPTIO U Dimensions in inches (millimeters) unless otherwise noted. N Package 14-Lead Plastic DIP 0.770 (19.558) MAX 14 13 12 11 10 9 8 0.260 ± 0.010 (6.604 ± 0.254) 1 2 3 4 5 6 7 0.300 – 0.325 (7.620 – 8.255) 0.130 ± 0.005 (3.302 ± 0.127) 0.015 (0.380) MIN 0.045 – 0.065 (1.143 – 1.651) 0.009 – 0.015 (0.229 – 0.381) +0.025 0.325 –0.015 8.255 +0.635 –0.381 0.065 (1.651) TYP 0.125 (3.175) MIN 0.075 ± 0.015 (1.905 ± 0.381) 0.100 ± 0.010 (2.540 ± 0.254) 0.018 ± 0.003 (0.457 ± 0.076) ( ) N14 0392 S Package 16-Lead Plastic SOIC 0.386 – 0.394* (9.804 – 10.008) 16 15 14 13 12 11 10 9 0.228 – 0.244 (5.791 – 6.197) 0.150 – 0.157* (3.810 – 3.988) 0.010 – 0.020 × 45° (0.254 – 0.508) 0.008 – 0.010 (0.203 – 0.254) 1 0.053 – 0.069 (1.346 – 1.752) 2 3 4 5 6 7 8 0.004 – 0.010 (0.101 – 0.254) 0° – 8° TYP 0.016 – 0.050 0.406 – 1.270 0.014 – 0.019 (0.355 – 0.483) 0.050 (1.270) TYP SO16 0392 *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 INCH (0.15mm). Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 11 LT1208/LT1209 U.S. Area Sales Offices NORTHEAST REGION Linear Technology Corporation One Oxford Valley 2300 E. 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The Coliseum, Riverside Way Camberley, Surrey GU15 3YL United Kingdom Phone: 44-276-677676 FAX: 44-276-64851 World Headquarters Linear Technology Corporation 1630 McCarthy Blvd. Milpitas, CA 95035-7487 Phone: (408) 432-1900 FAX: (408) 434-0507 03/10/93 12 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7487 (408) 432-1900 q FAX: (408) 434-0507 q TELEX: 499-3977 LT/GP 0493 10K REV 0 © LINEAR TECHNOLOGY CORPORATION 1993