LT1389BCS8-4.096

LT1389 Nanopower Precision Shunt Voltage Reference FEATURES s s s s s DESCRIPTIO Initial Voltage Accuracy: 0.05% Low Operating Current: 800nA Low Drift: 10ppm/°C Max Less Than 1Ω Dynamic Impedance Available in 1.25V, 2.5V, 4.096V and 5V SO-8 Packages APPLICATIO S s s s s The LT ®1389 is a nanopower, precision shunt voltage reference. The bandgap reference uses trimmed precision thin-film resistors and improved curvature correction techniques to achieve 0.05% initial voltage accuracy with guaranteed 10ppm/°C maximum temperature drift. Voltage regulation is maintained to an ultralow 800nA operating current. Advances in design, processing and packaging achieve low temperature cycling hysteresis. The LT1389 does not require an output compensation capacitor, but is stable with capacitive loads. Low dynamic impedance makes the LT1389 reference easy to use from unregulated supplies. The LT1389 reference can be used as a high performance upgrade to the LM185/LM385, LT1004, LT1034 and LT1634 where lowest power and guaranteed temperature drift are required. , LTC and LT are registered trademarks of Linear Technology Corporation. Portable Meters Precision Regulators A/D and D/A Converters Calibrators TYPICAL APPLICATIO 2.0 REFERENCE VOLTAGE CHANGE (mV) 1.5 1.0 0.5 0 – 0.5 –1.0 –1.5 – 2.0 0 IR = 0.8µA VOUT = 1.25V 5V 4.7M VOUT 1.25V LT1389-1.25 1389 TA01 10 U Temperature Drift 20 40 50 30 TEMPERATURE (°C) 60 70 1389 TA02 U U 1 LT1389 ABSOLUTE (Note 1) AXI U RATI GS PACKAGE/ORDER I FOR ATIO ORDER PART NUMBER TOP VIEW DNC* 1 DNC* 2 DNC* 3 GND 4 8 DNC* 7 DNC* 6 VOUT 5 GND Operating Current 1.25V ............................................................... 20mA 2.5V ................................................................. 20mA 4.096V ............................................................. 10mA 5V .................................................................... 10mA Forward Current .................................................. 20mA Operating Temperature Range ..................... 0°C to 70°C Storage Temperature Range (Note 2) ... – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C LT1389ACS8-1.25 LT1389BCS8-1.25 LT1389BCS8-2.5 LT1389BCS8-4.096 LT1389BCS8-5 S8 PART MARKING 389A12 389B12 389B25 1389B4 1389B5 S8 PACKAGE 8-LEAD PLASTIC SO TJMAX = 125°C, θJA = 190°C/ W *Connected internally. Do Not Connect external circuitry to these pins. Consult factory for Industrial and Military grade parts. AVAILABLE OPTIO S TEMPERATURE 0°C to 70°C OUTPUT VOLTAGE 1.250 1.250 2.500 4.096 5.000 ACCURACY (%) 0.05 0.05 0.05 0.075 0.075 TEMPERATURE COEFFICIENT (ppm/°C) 10 20 20 50 50 PART TYPE LT1389ACS8-1.25 LT1389BCS8-1.25 LT1389BCS8-2.5 LT1389BCS8-4.096 LT1389BCS8-5 PART MARKING 389A12 389B12 389B25 1389B4 1389B5 1.25V ELECTRICAL CHARACTERISTICS PARAMETER Reverse Breakdown Voltage CONDITIONS The q denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 3) MIN 1.24937 – 0.05 q q TYP 1.250 1.250 1.250 0.20 0.20 0.3 0.3 4 4 0.25 0.25 25 MAX 1.25062 0.05 1.25149 0.12 1.25237 0.19 0.4 1.0 1.0 2.0 0.6 10 20 0.7 1.5 UNITS V % V % V % mV mV mV mV µA ppm/°C ppm/°C Ω Ω µVP-P LT1389ACS8/LT1389BCS8 (IR = 0.8µA) LT1389ACS8 (IR = 0.8µA) LT1389BCS8 (IR = 0.8µA) 1.24849 – 0.12 1.24762 – 0.19 Reverse Breakdown Change with Current (Note 4) 0.8µA ≤ IR ≤ 200µA q 200µA ≤ IR ≤ 2mA q Minimum Operating Current Temperature Coefficient Reverse Dynamic Impedance (Note 5) Low Frequency Noise (Note 6) LT1389ACS8 (IR = 0.8µA) LT1389BCS8 (IR = 0.8µA) 0.8µA ≤ IR ≤ 2mA q q q q IR = 0.8µA, 0.1Hz ≤ f ≤ 10Hz 2 U W U U WW U W LT1389 2.5V ELECTRICAL CHARACTERISTICS PARAMETER Reverse Breakdown Voltage CONDITIONS LT1389BCS8 (IR = 0.9µA) LT1389BCS8 (IR = 0.9µA) Reverse Breakdown Change with Current (Note 4) 0.9µA ≤ IR ≤ 200µA The q denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 3) MIN 2.49875 – 0.05 q TYP 2.500 2.500 0.2 0.2 0.3 0.3 8 0.25 0.25 50 MAX 2.50125 0.05 2.50475 0.19 0.5 1.5 1.0 2.5 0.7 20 0.75 2 UNITS V % V % mV mV mV mV µA ppm/°C Ω Ω µVP-P 2.49525 – 0.19 q 200µA ≤ IR ≤ 2mA q Minimum Operating Current Temperature Coefficient Reverse Dynamic Impedance (Note 5) Low Frequency Noise (Note 6) IR = 0.9µA 0.9µA ≤ IR ≤ 2mA q q q IR = 0.9µA, 0.1Hz ≤ f ≤ 10Hz The q denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 3) PARAMETER Reverse Breakdown Voltage CONDITIONS LT1389BCS8 (IR = 1.5µA) LT1389BCS8 (IR = 1.5µA) Reverse Breakdown Change with Current (Note 4) 1.5µA ≤ IR ≤ 200µA q q 4.096V ELECTRICAL CHARACTERISTICS MIN 4.09293 – 0.075 4.0788 – 0.42 TYP 4.096 4.096 0.2 0.2 0.3 0.3 12 0.75 0.75 80 MAX 4.09907 0.075 4.1132 0.42 1.5 3 4 6 1 50 2 3 UNITS V % V % mV mV mV mV µA ppm/°C Ω Ω µVP-P 200µA ≤ IR ≤ 2mA q Minimum Operating Current Temperature Coefficient Reverse Dynamic Impedance (Note 5) Low Frequency Noise (Note 6) IR = 1.5µA 1.5µA ≤ IR ≤ 2mA q q q IR = 1.5µA, 0.1Hz ≤ f ≤ 10Hz 3 LT1389 The q denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 3) PARAMETER Reverse Breakdown Voltage CONDITIONS LT1389BCS8 (IR = 1.5µA) LT1389BCS8 (IR = 1.5µA) Reverse Breakdown Change with Current (Note 4) 1.5µA ≤ IR ≤ 200µA q q 5V ELECTRICAL CHARACTERISTICS MIN 4.99625 – 0.075 4.979 – 0.42 TYP 5.000 5.000 0.2 0.2 0.3 0.3 12 0.75 0.75 100 MAX 5.00375 0.075 5.021 0.42 1.5 3 4 6 1 50 2 3 UNITS V % V % mV mV mV mV µA ppm/°C Ω Ω µVP-P 200µA ≤ IR ≤ 2mA q Minimum Operating Current Temperature Coefficient Reverse Dynamic Impedance (Note 5) Low Frequency Noise (Note 6) IR = 1.5µA 1.5µA ≤ IR ≤ 2mA q q q IR = 1.5µA, 0.1Hz ≤ f ≤ 10Hz Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: If the part is stored outside of the specific operating temperature range, the output may shift due to hysteresis. Note 3: ESD (Electrostatic Discharge) sensitive device. Use proper ESD handling precautions. Note 4: Output requires 0.1µF for operating current greater than 1mA. Note 5: This parameter is guaranteed by “reverse breakdown change with current” test. Note 6: Peak-to-peak noise is measured with a single highpass filter at 0.1Hz and 2-pole lowpass filter at 10Hz. 4 LT1389 1.25V TYPICAL PERFOR A CE CHARACTERISTICS Reverse Characteristics 1.0 TA = – 40°C TO 85°C REFERENCE VOLTAGE CHANGE (mV) 2.0 REVERSE VOLTAGE CHANGE (mV) 1.5 1.0 0.5 0 IR = 250µA – 0.5 –1.0 –1.5 – 2.0 – 40 –20 40 20 TEMPERATURE (°C) 0 60 80 IR = 0.8µA REVERSE CURRENT (µA) 0.8 0.6 0.4 0.2 0 0 0.8 0.4 1.2 REVERSE VOLTAGE (V) 1.6 1389-1.25 G01 Reverse Dynamic Impedance 1000 TA = 25°C f = 25Hz DYNAMIC IMPEDANCE (kΩ) DYNAMIC IMPEDANCE (Ω) FORWARD VOLTAGE (V) 100 10 1 0.1 0.001 0.01 0.1 1 REVERSE CURRENT (mA) 10 1389-1.25 G04 0.1Hz to 10Hz Noise 25 20 IR = 0.8µA NOISE VOLTAGE (µV/DIV) 15 10 5 0 –5 –10 –15 – 20 – 25 0 10 20 30 40 50 TIME (SEC) 60 70 1389-1.25 G07 UW 100 10 1 0.1 1.5V 1V 0.5V 0V 5V 0V Temperature Drift 1.2 1.0 0.8 Reverse Voltage Change vs Current – 40°C 0.6 0.4 0.2 0 0.001 25°C 85°C 0.1 1 0.01 REVERSE CURRENT (mA) 10 1389-1.25 G03 1389-1.25 G02 Dynamic Impedance vs Frequency TA = 25°C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Forward Characteristics TA = 25°C IR = 0.8µA COUT = 0µF IR = 0.8µA COUT = 0.047µF IR = 10µA COUT = 0.1µF IR = 10µA COUT = 0µF 0.01 0.01 0.1 1 FREQUENCY (kHz) 10 1389-1.25 G05 0 0.001 0.01 0.1 1 10 FORWARD CURRENT (mA) 100 1389-1.25 G06 Response Time 1.5V 1V 0.5V 0V 5V 0V IR = 0.8µA COUT = 0µF 1ms/DIV 1389-1.25 G08 Response Time IR = 0.8µA COUT = 0.1µF 200ms/DIV 1389-1.25 G09 5 LT1389 2.5V TYPICAL PERFOR A CE CHARACTERISTICS Reverse Characteristics 1000 TA = – 40°C TO 85°C REVERSE VOLTAGE CHANGE (mV) 800 REVERSE CURRENT (nA) REVERSE VOLTAGE CHANGE (mV) 600 400 200 0 0 0.4 0.8 1.2 1.6 2.0 REVERSE VOLTAGE (V) 2.4 2.8 1389-2.5 G01 Reverse Dynamic Impedance 1000 TA = 25°C f = 25Hz FORWARD VOLTAGE (V) 100 DYNAMIC IMPEDANCE (kΩ) DYNAMIC IMPEDANCE (Ω) 10 1 0.1 0.001 0.01 0.1 1 REVERSE CURRENT (mA) 10 1389-2.5 G04 0.1Hz to 10Hz Noise 100 80 IR = 0.9µA NOISE VOLTAGE (µV/DIV) 60 40 20 0 – 20 – 40 – 60 – 80 –100 0 10 20 30 40 50 TIME (SEC) 60 70 1389-2.5 G07 6 UW Temperature Drift 4.0 3.0 2.0 1.0 0 –1.0 – 2.0 – 3.0 – 4.0 – 40 –20 0 20 40 60 80 IR = 0.9µA IR = 250µA 2.0 Reverse Voltage Change vs Current 1.6 – 40°C 1.2 0.8 25°C 0.4 85°C 0 0.001 TEMPERATURE (°C) 1389-2.5 TA02 0.01 0.1 1 REVERSE CURRENT (mA) 10 1389-2.5 G03 Dynamic Impedance vs Frequency 100 TA = 25°C 1.0 0.9 0.8 Forward Characteristics TA = 25°C 10 IR = 0.9µA COUT = 0µF 1 0.7 0.6 0.5 0.4 0.3 0.2 0.1 IR = 0.9µA COUT = 0.033µF IR = 10µA COUT = 0.22µF 0.1 IR = 10µA COUT = 0µF 0.01 0.01 0.1 1 FREQUENCY (kHz) 10 1389-2.5 G05 0 0.001 0.01 0.1 1 10 FORWARD CURRENT (mA) 100 1389-2.5 G06 Response Time 3V 2V 1V 0V 5V 0V IR = 0.9µA COUT = 0µF 1ms/DIV 1389-2.5 G08 Response Time 3V 2V 1V 0V 5V 0V IR = 0.9µA COUT = 0.1µF 200ms/DIV 1389-2.5 G09 LT1389 4.096V TYPICAL PERFOR A CE CHARACTERISTICS Reverse Characteristics 1000 TA = – 40°C TO 85°C REFERENCE VOLTAGE CHANGE (mV) REVERSE VOLTAGE CHANGE (mV) 800 REVERSE CURRENT (nA) 600 400 200 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 REVERSE VOLTAGE (V) 1389-4 G01 Reverse Dynamic Impedance 1000 TA = 25°C f = 25Hz 100 DYNAMIC IMPEDANCE (kΩ) DYNAMIC IMPEDANCE (Ω) FORWARD VOLTAGE (V) 100 10 1 0.1 0.001 0.01 0.1 1 REVERSE CURRENT (mA) 10 1389-4 G04 Response Time 4V 0V 10V 0V IR = 1.5µA COUT = 0µF 2ms/DIV 1389-4 G08 UW 8 6 4 2 0 –2 –4 –6 –8 – 40 10 1 0.1 0.01 0.01 Temperature Drift 2.0 Reverse Voltage Change vs Current 1.6 – 40°C 1.2 IR = 250µA IR = 1.5µA 0.8 25°C 0.4 85°C –20 40 20 TEMPERATURE (°C) 0 60 80 0 0.001 0.1 1 0.01 REVERSE CURRENT (mA) 10 1389-4 G03 1389-4 G02 Dynamic Impedance vs Frequency TA = 25°C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Forward Characteristics TA = 25°C IR = 1.5µA COUT = 0µF IR = 1.5µA COUT = 0.047µF IR = 10µA COUT = 0µF IR = 10µA COUT = 0.68µF 10 1389-4 G05 0.1 1 FREQUENCY (kHz) 0 0.001 0.01 0.1 1 10 FORWARD CURRENT (mA) 100 1389-4 G06 Response Time 4V 0V 10V 0V IR = 1.5µA COUT = 0.1µF 200ms/DIV 1389-4 G09 7 LT1389 5V TYPICAL PERFOR A CE CHARACTERISTICS Reverse Characteristics 1000 TA = – 40°C TO 85°C REFERENCE VOLTAGE CHANGE (mV) REVERSE VOLTAGE CHANGE (mV) 800 REVERSE CURRENT (nA) 600 400 200 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 REVERSE VOLTAGE (V) 1389-4 G01 Reverse Dynamic Impedance 1000 TA = 25°C f = 25Hz DYNAMIC IMPEDANCE (kΩ) DYNAMIC IMPEDANCE (Ω) FORWARD VOLTAGE (V) 100 10 1 0.1 0.001 0.01 0.1 1 REVERSE CURRENT (mA) 1389-5 G04 Response Time 4V 2V 0V 10V 0V IR = 1.5µA COUT = 0µF 2ms/DIV 1389-5 G08 8 UW 10 Temperature Drift 8 6 4 2 0 –2 –4 –6 –8 – 40 IR = 1.5µA IR = 250µA 2.0 Reverse Voltage Change vs Current 1.6 – 40°C 1.2 25°C 0.8 0.4 85°C –20 40 20 TEMPERATURE (°C) 0 60 80 0 0.001 0.1 1 0.01 REVERSE CURRENT (mA) 10 1389-4 G03 1389-5 G02 Dynamic Impedance vs Frequency 100 TA = 25°C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Forward Characteristics TA = 25°C 10 1 IR = 1.5µA COUT = 0µF 0.1 IR = 10µA COUT = 0µF 0.01 0.01 IR = 1.5µA COUT = 0.047µF IR = 10µA COUT = 0.1µF 10 1389-4 G05 0.1 1 FREQUENCY (kHz) 0 0.001 0.01 0.1 1 10 FORWARD CURRENT (mA) 100 1389-5 G06 Response Time 4V 2V 0V 10V 0V IR = 1.5µA COUT = 0.1µF 200ms/DIV 1389-5 G09 LT1389 APPLICATIO S I FOR ATIO The reverse characteristics of the LT1389 resembles a simple resistor Zener diode parallel connection. This well behaved characteristic is important to the proper operation of circuits like Figure 1. The adjustable output voltage reference depends upon positive feedback from the LT1495’s output to start-up and regulate the bias current for the LT1389. The LT1389 has no negative resistance regions that can interfere with the proper start-up of the buffered reference. – 1.25V V RB = OUT 0.8µA LT1389-1.25 Figure 1. Adjustable Output Voltage Reference DNC DNC DNC GND Figure 2. Guard Ring to Reduce Board Leakage U Board leakage is a concern for a nanopower precision shunt voltage reference. The LT1389 requires attention to detail in board layout in order to maximize its performance. 1.5GΩ of leakage between a DNC pin and a 5V supply will conduct 2.5nA which induces a 0.2% error in VOUT. Board leakage can be minimized by encircling the DNC pins with a guard ring operated at a potential of VOUT. By tying the guard ring to VOUT as shown in Figure 2, leakage paths are eliminated. VIN ≥ 10.5V W UU + LT1495 VOUT 1.5V TO 10V R1 249k TO 8.66M R2 1.24M 1389 F01 – BOARD METAL TRACE 1 2 LT1389 3 4 6 5 VOUT GND 1389 F02 8 7 DNC DNC 9 LT1389 TYPICAL APPLICATIO S 2.5V Output, Low Noise Reference 1µF VIN ≥ 3V 10k 510k 10k 1k + 100k 20µF* 20µF* 1389 TA04 + LT1389-2.5 *WET SLUG TANTALUM Micropower Voltage and Current Reference ZTX214C 1/2 LT1495 IOUT = 1µA R1 TO R3: MAR5 SERIES, IRC (512) 992-7900 10 – 2 AAA ALKALINE CELLS R3 249k 0.1% LT1389-1.25 + – + U LT1495 2.5V R4 300k 5% + 1/2 LT1495 – R1 200k 0.1% R2 1M 0.1% COM VOUT = 1.5V 1389 TA03 LT1389 PACKAGE DESCRIPTIO 0.010 – 0.020 × 45° (0.254 – 0.508) 0.008 – 0.010 (0.203 – 0.254) 0°– 8° TYP 0.014 – 0.019 (0.355 – 0.483) TYP *DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE **DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE 0.016 – 0.050 (0.406 – 1.270) Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. U Dimensions in inches (millimeters) unless otherwise noted. S8 Package 8-Lead Plastic Small Outline (Narrow 0.150) (LTC DWG # 05-08-1610) 0.189 – 0.197* (4.801 – 5.004) 8 7 6 5 0.228 – 0.244 (5.791 – 6.197) 0.150 – 0.157** (3.810 – 3.988) 1 2 3 4 0.053 – 0.069 (1.346 – 1.752) 0.004 – 0.010 (0.101 – 0.254) 0.050 (1.270) BSC SO8 1298 11 LT1389 TYPICAL APPLICATIO S Single Cell Li-Ion Battery Supervisory Circuit, IQ = 10µA OFF VBAT 1.75V RS 620k 5% CHARGER SW T0 LOAD + A1 1/4 LT1496 – R1 500k 0.1% 1.25V R2 1.25M 0.1% – R4 1.25M 0.1% LT1389-1.25 D1, D2: 1N458 R1 TO R4: CAR6 SERIES IRC (512) 992-7900 SW: PMOS SPECIFIED FOR MAXIMUM LOAD CURRENT Precision Undervoltage Lockout Circuit VBATT R1 3.57M B 0.1% Li-Ion CELL A 4.1V R2 3M 0.1% R3 2.05M 1% SW1 TO LOAD + U1 1/2 LT1495 U2 LT1389 1.250V R4 150k 1% – 1389 TA06 R1, R2: IRC CAR6 SERIES (512) 992-7900 SW1: PMOS SPECIFIED FOR MAXIMUM LOAD CURRENT RELATED PARTS PART NUMBER LTC 1440 LT1460 LT1461 LT1495 LTC1540 LT1634 LTC1798 ® DESCRIPTION Micropower Comparator with Reference Micropower Series Reference Micropower Precision LDO Series Reference 1.5µA Precision Rail-to-Rail Dual Op Amp Nanopower Comparator with Reference Micropower Precision Shunt Voltage Reference 6µA Low Dropout Series Reference COMMENTS 3.7µA Max Supply Current, 1% 1.182V Reference, MSOP, PDIP and SO-8 Packages 0.075% Max, 10ppm/°C Max Drift, 2.5V, 5V and 10V Versions, MSOP, PDIP, SO-8, SOT-23 and TO-92 Packages 3ppm/°C Max Drift, 0°C to 70°C, –40°C to 85°C, –40°C to 125°C Options in SO-8 1.5µA Max Supply Current, 100pA Max IOS 600nA Max Supply Current, 2% 1.182V Reference, MSOP and SO-8 Packages 0.05% Max, 10ppm/°C Max Drift, 1.25V, 2.5V, 4.096V, 5V, 10µA Maximum Supply Current Available in Adjustable, 2.5V, 3V, 4.096V and 5V 1389fa LT/TP 0200 2K REV A • PRINTED IN USA 12 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900 q FAX: (408) 434-0507 q www.linear-tech.com + – + – U A2 1/4 LT1496 RH1 10M 5% D1 RH2 10M 5% D2 R3 1.75M 0.1% RSW 1M 5% BATTERY A VBAT + A3 1/4 LT1496 A4 1/4 LT1496 1389 TA05 RSW 1M 5% R5 10M 5% © LINEAR TECHNOLOGY CORPORATION 1998