LT5520

LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer FEATURES s s s s s s s s s s s DESCRIPTIO Wide RF Output Frequency Range: 1.3GHz to 2.3GHz 15.9dBm Typical Input IP3 at 1.9GHz On-Chip RF Output Transformer No External LO or RF Matching Required Single-Ended LO and RF Operation Integrated LO Buffer: –5dBm Drive Level Low LO to RF Leakage: – 41dBm Typical Wide IF Frequency Range: DC to 400MHz Enable Function with Low Off-State Leakage Current Single 5V Supply Small 16-Lead QFN Plastic Package The LT®5520 mixer is designed to meet the high linearity requirements of wireless and cable infrastructure transmission applications. A high-speed, internally matched, LO amplifier drives a double-balanced mixer core, allowing the use of a low power, single-ended LO source. An RF output transformer is integrated, thus eliminating the need for external matching components at the RF output, while reducing system cost, component count, board area and system-level variations. The IF port can be easily matched to a broad range of frequencies for use in many different applications. The LT5520 mixer delivers 15.9dBm typical input 3rd order intercept point at 1.9GHz with IF input signal levels of –10dBm. The input 1dB compression point is typically 4dBm. The IC requires only a single 5V supply. , LTC and LT are registered trademarks of Linear Technology Corporation. APPLICATIO S s s s s Wireless Infrastructure Cable Downlink Infrastructure Point-to-Point Data Communications High Linearity Frequency Conversion TYPICAL APPLICATIO 5VDC 1µF 1000pF 39nH EN BPF IF INPUT 4:1 IF + 15pF IF – 220pF 100Ω RF – BPF PA RF OUTPUT RF + 100Ω BIAS VCC1 VCC2 VCC3 POUT, IM3 (dBm/TONE) 220pF 10pF GND 5pF (OPTIONAL) LO INPUT –5dBm LO+ 85Ω 5pF LO – LT5520 5520 F01 Figure 1. Frequency Conversion in Wireless Infrastructure Transmitter 5520f U RF Output Power and Output IM3 vs IF Input Power (Two Input Tones) 10 0 –10 –20 –30 –40 –50 –60 –70 –80 –90 –16 IM3 PLO = –5dBm fLO = 1760MHz fIF1 = 140MHz fIF2 = 141MHz fRF = 1900MHz TA = 25°C 4 5520 • F01b U U POUT –12 –4 0 –8 IF INPUT POWER (dBm/TONE) 1 LT5520 ABSOLUTE (Note 1) AXI U RATI GS PACKAGE/ORDER I FOR ATIO TOP VIEW Supply Voltage ....................................................... 5.5V Enable Voltage ............................. –0.3V to (VCC + 0.3V) LO Input Power (Differential) .............................. 10dBm RF+ to RF – Differential DC Voltage...................... ±0.13V RF Output DC Common Mode Voltage ......... –1V to VCC IF Input Power (Differential) ............................... 10dBm IF+, IF – DC Currents .............................................. 25mA LO+ to LO– Differential DC Voltage .......................... ±1V LO Input DC Common Mode Voltage ............ –1V to VCC Operating Temperature Range .................–40°C to 85°C Storage Temperature Range ................. – 65°C to 125°C Junction Temperature (TJ).................................... 125°C ORDER PART NUMBER 12 GND 11 RF + 10 RF – 9 GND GND 16 15 14 13 GND 1 IF + 2 IF – 3 GND 4 5 6 7 8 17 GND LO– LO+ LT5520EUF UF PACKAGE 16-LEAD (4mm × 4mm) PLASTIC QFN EXPOSED PAD IS GND (PIN 17), MUST BE SOLDERED TO PCB UF PART MARKING 5520 VCC1 VCC2 TJMAX = 125°C, θJA = 37°C/W Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS PARAMETER IF Input Frequency Range LO Input Frequency Range RF Output Frequency Range CONDITIONS MIN TYP DC to 400 900 to 2700 1300 to 2300 MAX UNITS MHz MHz MHz 1900MHz Application: VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.76GHz at –5dBm, RF output measured at 1900MHz, unless otherwise noted. Test circuit shown in Figure 2. (Notes 2, 3) PARAMETER IF Input Return Loss LO Input Return Loss RF Output Return Loss LO Input Power Conversion Gain Input 3rd Order Intercept Input 2nd Order Intercept LO to RF Leakage LO to IF Leakage Input 1dB Compression IF Common Mode Voltage Noise Figure Internally Biased Single Side Band –10dBm/Tone, ∆f = 1MHz –10dBm, Single-Tone CONDITIONS ZO = 50Ω, with External Matching Z O = 50 Ω Z O = 50 Ω MIN TYP 20 16 20 –10 to 0 –1 15.9 45 –41 –35 4 1.77 15 MAX UNITS dB dB dB dBm dB dBm dBm dBm dBm dBm VDC dB DC ELECTRICAL CHARACTERISTICS (Test Circuit Shown in Figure 2) VCC = 5VDC, EN = High , TA = 25°C (Note 3), unless otherwise noted. PARAMETER Enable (EN) Low = Off, High = On Turn-On Time (Note 4) Turn-Off Time (Note 4) Input Current VENABLE = 5VDC 2 6 1 10 µs µs µA 5520f CONDITIONS VCC3 EN MIN TYP MAX UNITS 2 U W U U WW W LT5520 DC ELECTRICAL CHARACTERISTICS (Test Circuit Shown in Figure 2) VCC = 5VDC, EN = High , TA = 25°C (Note 3), unless otherwise noted. PARAMETER Enable = High (On) Enable = Low (Off) Power Supply Requirements (VCC) Supply Voltage Supply Current Shutdown Current VCC = 5VDC EN = Low 4.5 to 5.25 60 1 70 100 VDC mA µA CONDITIONS MIN 3 0.5 TYP MAX UNITS VDC VDC Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: External components on the final test circuit are optimized for operation at fRF = 1900MHz, fLO = 1.76GHz and fIF = 140MHz. Note 3: Specifications over the –40°C to 85°C temperature range are assured by design, characterization and correlation with statistical process controls. Note 4: Turn-On and Turn-Off times are based on the rise and fall times of the RF output envelope from full power to –40dBm with an IF input power of –10dBm. TYPICAL PERFOR A CE CHARACTERISTICS Supply Current vs Supply Voltage 66 64 SUPPLY CURRENT (mA) 62 60 58 56 54 52 50 4.0 4.25 4.5 4.75 5.0 SUPPLY VOLTAGE (V) 5.25 5.5 TA = – 40°C TA = 25°C SHUTDOWN CURRENT (µA) TA = 85°C VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.76GHz at –5dBm, RF output measured at 1900MHz, unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.) Conversion Gain and SSB Noise Figure vs RF Output Frequency 18 16 HIGH SIDE LO 14 12 GAIN, NF (dB) LOW SIDE LO SSB NF IIP3 (dBm) 10 8 6 4 2 0 –2 –4 1300 1500 1700 1900 2100 2300 2500 RF OUTPUT FREQUENCY (MHz) 5520 • GO3 24 22 20 18 IIP3 LOW SIDE LO HIGH SIDE LO HIGH SIDE LO 35 30 25 20 15 10 5 2500 LO LEAKAGE (dBm) GAIN LOW SIDE AND HIGH SIDE LO UW (Test Circuit Shown in Figure 2) Shutdown Current vs Supply Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 4.0 4.25 TA = 25°C TA = – 40°C 5.25 4.5 4.75 5.0 SUPPLY VOLTAGE (V) 5.5 TA = 85°C 5520 • GO1 5520 • GO2 32 30 28 26 IIP3 and IIP2 vs RF Output Frequency LOW SIDE LO IIP2 55 50 45 40 IIP2 (dBm) LO-RF Leakage vs RF Output Frequency –10 –20 –30 HIGH SIDE LO –40 16 14 –50 LOW SIDE LO 12 1300 1500 1700 1900 2100 2300 RF OUTPUT FREQUENCY (MHz) –60 1300 1500 1700 1900 2100 2300 RF OUTPUT FREQUENCY (MHz) 2500 5520 • GO4 5520 • GO5 5520f 3 LT5520 VCC = 5VDC, EN = High , TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.76GHz at –5dBm, RF output measured at 1900MHz, unless otherwise noted. For 2-tone inputs: 2nd IF Input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.) Conversion Gain and SSB Noise Figure vs LO Input Power 16 14 12 10 GAIN (dB) 8 6 4 2 0 –2 –4 –16 TA = 85°C –12 –8 –4 0 LO INPUT POWER (dBm) 4 5520 • G06 TYPICAL PERFOR A CE CHARACTERISTICS IIP3 and IIP2 vs LO Input Power 20 TA = 85°C 18 SSB NF 16 14 TA = 25°C TA = –40°C 12 10 8 GAIN TA = –40°C TA = 25°C 6 4 2 0 IIP3, IIP2 (dBm) NF (dB) 50 45 40 35 30 25 20 15 10 5 0 –16 IIP3 TA = 25°C, TA = – 40°C TA = 85°C IIP2 TA = – 40°C TA = 25°C LO LEAKAGE (dBm) IIP3 and IIP2 vs LO Input Power 50 LOW SIDE LO 45 40 IIP3, IIP2 (dBm) 35 30 25 20 15 10 5 0 –16 0 –8 –12 –4 LO INPUT POWER (dBm) 4 5520 • G09 POUT, IM3 (dBm/TONE) –20 –30 –40 –50 –60 –70 –80 POUT, IM2 (dBm/TONE) IIP2 HIGH SIDE LO IIP3 HIGH SIDE LO LOW SIDE LO Conversion Gain vs IF Input Power (One Input Tone) 4 3 2 RETURN LOSS (dB) 1 GAIN (dB) 0 –1 –2 –3 –4 –5 –6 –16 –25 –12 0 –8 –4 IF INPUT POWER (dBm) 4 5520 • G12 TA = – 40°C TA = 25°C TA = 85°C GAIN (dB) 4 UW LO-RF Leakage vs LO Input Power –10 TA = 85°C –20 –30 TA = – 40°C –40 TA = 25°C –50 TA = 85°C 0 –8 –12 –4 LO INPUT POWER (dBm) 4 5520 • G07 –60 –16 0 –8 –12 –4 LO INPUT POWER (dBm) 4 5520 • G08 RF Output Power and Output IM3 vs IF Input Power (Two Input Tones) 10 0 –10 TA = – 40°C TA = 85°C POUT TA = 25°C 10 0 –10 –20 –30 –40 –50 RF Output Power and Output IM2 vs IF Input Power (Two Input Tones) TA = – 40°C TA = 85°C POUT TA = – 40°C TA = 25°C TA = – 40°C IM3 TA = 85°C IM2 –60 –70 TA = 85°C TA = 25°C –90 –16 0 –8 –12 –4 IF INPUT POWER (dBm/TONE) 4 5520 • G10 –80 –16 0 –8 –12 –4 IF INPUT POWER (dBm/TONE) 4 5520 • G11 IF, LO and RF Port Return Loss vs Frequency 0 8 7 –5 6 5 –10 4 3 2 1 0 IF PORT 0 500 RF PORT 1000 1500 2000 FREQUENCY (MHz) 2500 3000 –1 Conversion Gain, IIP3 and IIP2 vs Supply Voltage 50 LOW SIDE LO HIGH SIDE LO 45 40 IIP2 35 30 25 IIP3 HIGH SIDE LO LOW SIDE LO GAIN LOW SIDE AND HIGH SIDE LO 4.25 5.25 4.5 4.75 5.0 SUPPLY VOLTAGE (V) 20 15 10 5 0 5.5 IIP3, IIP2 (dBm) –15 LO PORT –20 –2 4.0 5520 • G13 5520 • G14 5520f LT5520 PI FU CTIO S GND (Pins 1, 4, 9, 12, 13, 16): Internal Grounds. These pins are used to improve isolation and are not intended as DC or RF grounds for the IC. Connect these pins to low impedance grounds for best performance. IF+, IF – (Pins 2, 3): Differential IF Signal Inputs. A differential signal must be applied to these pins through DC blocking capacitors. The pins must be connected to ground with 100Ω resistors (the grounds must each be capable of sinking about 18mA). For best LO leakage performance, these pins should be DC isolated from each other. An impedance transformation is required to match the IF input to the desired source impedance (typically 50Ω or 75Ω). EN (Pin 5): Enable Pin. When the applied voltage is greater than 3V, the IC is enabled. When the applied voltage is less than 0.5V, the IC is disabled and the DC current drops to about 1µA. VCC1 (Pin 6): Power Supply Pin for the Bias Circuits. Typical current consumption is about 2mA. This pin should be externally connected to VCC and have appropriate RF bypass capacitors. VCC2 (Pin 7): Power Supply Pin for the LO Buffer Circuits. Typical current consumption is about 22mA. This pin should have appropriate RF bypass capacitors as shown in Figure 2. The 1000pF capacitor should be located as close to the pins as possible. VCC3 (Pin 8): Power Supply Pin for the Internal Mixer. Typical current consumption is about 36mA. This pin should be externally connected to VCC through an inductor. A 39nH inductor is used in Figure 2, though the value is not critical. RF –, RF+ (Pins 10, 11): Differential RF Outputs. One pin may be DC connected to a low impedance ground to realize a 50Ω single-ended output. No external matching components are required. A DC voltage should not be applied across these pins, as they are internally connected through a transformer winding. LO+, LO – (Pins 14, 15): Differential Local Oscillator Inputs. The LT5520 works well with a single-ended source driving the LO+ pin and the LO– pin connected to a low impedance ground. No external matching components are required. An internal resistor is connected across these pins; therefore, a DC voltage should not be applied across the inputs. GROUND (Pin 17, Exposed Pad): DC and RF ground return for the entire IC. This must be soldered to the printed circuit board low impedance ground plane. BLOCK DIAGRA W U U U BACKSIDE GROUND GND 17 12 GND 13 5pF LO+ 14 85Ω LO – 15 5pF GND 16 HIGH SPEED LO BUFFER RF + 11 RF – 10 GND 9 8 VCC3 10pF DOUBLEBALANCED MIXER 6 VCC1 BIAS 5 EN 7 VCC2 1 GND 2 IF + 3 IF – 4 GND 5520 BD 5520f 5 LT5520 TEST CIRCUIT LOIN 1760MHz 16 1 GND GND IFIN 140MHz 1 2 3 4 C2 R2 R1 T1 5 C3 3 IF – C1 2 IF + LT5520 RF – 10 RFOUT 1900MHz RF + 11 15 LO – 14 LO+ 13 GND 12 GND REF DES C1, C2 C3 C4 C5 L1 R1, R2 T1 5520 TC01 VALUE 220pF 15pF 1000pF 1µF 39nH 100Ω, 0.1% 4:1 SIZE 0402 0402 0402 0603 0402 0603 SM-22 PART NUMBER AVX 04023C221KAT2A AVX 04023A150KAT2A AVX 04023A102KAT2A Taiyo Yuden LMK107BJ105MA Toko LL1005-FH39NJ IRC PFC-W0603R-03-10R1-B M/A-COM ETC4-1-2 4 0.018" 0.062" 0.018" ER = 4.4 RF GND DC GND GND EN 5 VCC1 6 VCC2 7 GND VCC3 8 9 EN VCC C5 C4 L1 Figure 2. Test Schematic for the LT5520 APPLICATIO S I FOR ATIO The LT5520 consists of a double-balanced mixer, a highperformance LO buffer, and bias/enable circuits. The RF and LO ports may be driven differentially; however, they are intended to be used in single-ended mode by connecting one input of each pair to ground. The IF input ports must be DC-isolated from the source and driven differentially. The IF input should be impedance-matched for the desired input frequency. The LO input has an internal broadband 50Ω match with return loss better than 10dB at frequencies up to 3000MHz. The RF output band ranges from 1300MHz to 2300MHz, with an internal RF transformer providing a 50Ω impedance match across the band. Low side or high side LO injection can be used. IF Input Port The IF inputs are connected to the emitters of the doublebalanced mixer transistors, as shown in Figure 3. These pins are internally biased and an external resistor must be connected from each IF pin to ground to set the current through the mixer core. The circuit has been optimized to work with 100Ω resistors, which will result in approximately 18mA of DC current per side. For best LO leakage performance, the resistors should be well matched; thus 6 U resistors with 0.1%, tolerance are recommended. If LO leakage is not a concern, then lesser tolerance resistors can be used. The symmetry of the layout is also important for achieving optimum LO isolation. The capacitors shown in Figure 3, C1 and C2, serve two purposes. They provide DC isolation between the IF+ and IF – ports, thus preventing DC interactions that could cause unpredictable variations in LO leakage. They also improve the impedance match by canceling excess inductance in the package and transformer. The input capacitor value required to realize an impedance match at desired frequency, f, can be estimated as follows: C1 = C2 = 1 (2πf)2 (LIN + LEXT ) where; f is in units of Hz, LIN and LEXT are in H, and C1, C2 are in farad. LIN is the differential input inductance of the LT5520, and is approximately 1.67nH. LEXT represents the combined inductances of differential external components and transmission lines. For the evaluation board shown in Figure 10, LEXT = 4.21nH. Thus, for f = 140MHz, the above formula gives C1 = C2 = 220pF. 5520f W U U LT5520 APPLICATIO S I FOR ATIO C1 IFIN 50Ω T1 4:1 C3 100Ω 0.1% 2 18mA VCC 3 C2 100Ω 0.1% 18mA LT5520 5520 F03 Figure 3. IF Input with External Matching Table 1 lists the differential IF input impedance and reflection coefficient for several frequencies. A 4:1 balun can be used to transform the impedance up to about 50Ω. Table 1. IF Input Differential Impedance Frequency (MHz) 10 44 70 140 170 240 360 500 Differential Input Impedance 10.1 + j0.117 10.1 + j0.476 10.1 + j0.751 10.2 + j1.47 10.2 + j1.78 10.2 + j2.53 10.2 + j3.81 10.2 + j5.31 Differential S11 Mag Angle 0.663 0.663 0.663 0.663 0.663 0.663 0.663 0.663 180 179 178 177 176 174 171 167 LO Input Port The simplified circuit for the LO buffer input is shown in Figure 4. The LO buffer amplifier consists of high-speed limiting differential amplifiers, optimized to drive the mixer quad for high linearity. The LO + and LO – ports can be driven differentially; however, they are intended to be driven by a single-ended source. An internal resistor connected across the LO + and LO – inputs provides a broadband 50Ω impedance match. Because of the resistive match, a DC voltage at the LO input is not recommended. If the LO signal source output is not AC coupled, then a DC blocking capacitor should be used at the LO input. U LOIN 50Ω 14 LO+ 5pF 220Ω 85Ω 220Ω VCC 15 LO – 5pF LT5520 5520 F04 W U U Figure 4. LO Input Circuit Though the LO input is internally 50Ω matched, there may be some cases, particularly at higher frequencies or with different source impedances, where a further optimized match is desired. Table 2 includes the single -ended input impedance and reflection coefficient vs frequency for the LO input for use in such cases. Table 2. Single-Ended LO Input Impedance Frequency (MHz) 1300 1500 1700 1900 2100 2300 2500 2700 Input Impedance 62.8 – j9.14 62.2 – j11.4 61.5 – j13.4 60.0 – j15.2 58.4 – j16.9 56.5 – j17.9 54.9 – j18.8 53.7 – j18.8 S11 Mag 0.139 0.148 0.157 0.164 0.172 0.176 0.182 0.182 Angle –30.9 –37.1 – 42.4 – 48.9 –54.7 –60.4 –65.1 –68.5 RF Output Port An internal RF transformer, shown in Figure 5, reduces the mixer-core impedance to provide an impedance of 50Ω across the RF + and RF – pins. The LT5520 is designed and tested with the outputs configured for single-ended operation, as shown in the Figure 5; however, the outputs can be used differentially as well. A center-tap in the transformer provides the DC connection to the mixer core and the transformer provides DC isolation at the RF output. The RF + and RF – pins are connected together through the secondary windings of the transformer, thus a DC voltage should not be applied across these pins. 5520f 7 LT5520 APPLICATIO S I FOR ATIO The impedance data for the RF output, listed in Table 3, can be used to develop matching networks for different load impedances. Table 3. Single-Ended RF Output Impedance Frequency (MHz) 1300 1500 1700 1900 2100 2300 2500 2700 Input Impedance 26.9 + j38.2 44.2 + j35.7 53.9 + j20.6 49.5 + j7.97 42.8 + j4.14 38.9 + j5.41 38.7 + j7.78 41.1 – j9.51 S11 Mag 0.520 0.359 0.198 0.080 0.089 0.139 0.154 0.142 Angle 94.7 78.4 68.0 88.9 GAIN (dB) RF+ 11 VCC RF– 8 VCC LT5520 10 5520 F05 Operation at Different Input Frequencies On the evaluation board shown in Figure 10, the input of the LT5520 can be easily matched for different frequencies by changing the input capacitors, C1 and C2. Table 4 lists some actual values used at selected frequencies. Table 4. Input Capacitor Values vs Frequency Frequency (MHz) 70 140 240 480 650 Capacitance (C1, C2) (pF) 820 220 68 18 12 NF (dB) Figure 5. RF Output Circuit 8 U The performance was evaluated with the input tuned for each of these frequencies and the results are summarized in Figures 6-8. The same IF input balun transformer was used for all measurements. In each case, the LO input frequency was adjusted to maintain an RF output frequency of 1900 MHz. 5 4 3 2 1 0 GAIN –1 –2 –3 –4 –5 0 100 200 300 400 500 600 INPUT FREQUENCY (MHz) HIGH SIDE LO LOW SIDE LO IIP3 LOW SIDE LO HIGH SIDE LO 20 18 16 14 12 10 8 6 4 2 0 700 IIP3 (dBm) W U U 148 151 140 127 5520 F06 Figure 6. Conversion Gain and IIP3 vs Tuned IF Input Frequency RFOUT 50Ω 18 PLO = –5dBm 17 HIGH SIDE LO 16 15 LOW SIDE LO 14 PLO = 0dBm 13 0 100 200 300 400 500 600 INPUT FREQUENCY (MHz) 700 5520 F07 Figure 7. SSB Noise Figure vs Tuned IF Input Frequency 5520f LT5520 APPLICATIO S I FOR ATIO U Low Frequency Matching of the RF Output Port Without any external components on the RF output, the internal transformer of the LT5520 provides a good 50Ω impedance match for RF frequencies above approximately 1600MHz. At frequencies lower than this, the return loss drops below 10dB and degrades the conversion gain. The addition of a single 3.3pF capacitor in series with the RF output improves the match at lower RF frequencies, shifting the 10dB return loss point to about 1300MHz, as demonstrated in Figure 9. This change also results in an improvement of the conversion gain, as shown in Figure 9. 1 LOW SIDE LO 0 –1 –2 HIGH SIDE LO COUT = 3.3pF NO COUT –5 GAIN 0 Figures 6-8 illustrate the performance versus tuned IF input frequency with both high side and low side LO injection. Figure 6 shows the measured conversion gain and IIP3. The noise figure is plotted in Figure 7 for LO power levels of –5dBm and 0dBm. At lower input frequencies, the LO power level has little impact on noise figure. However, for higher frequencies, an increased LO drive level may be utilized to achieve better noise figure. The single-tone IIP2 behavior is illustrated in Figure 8. 60 50 40 IIP2 (dBm) 30 20 10 0 GAIN (dB) 0 100 200 300 400 500 600 INPUT FREQUENCY (MHz) Figure 8. IIP2 vs Tuned IF Input Frequency W U U RETURN LOSS (dB) –3 –4 –5 –6 –7 –8 NO COUT 2200 COUT = 3.3pF –9 1200 1400 1600 1800 2000 FREQUENCY (MHz) RETURN LOSS –10 –15 –20 700 –25 2400 5520 F08 5520 F09 Figure 9. Conversion Gain and Return Loss vs Output Frequency 5520f 9 LT5520 APPLICATIO S I FOR ATIO U (10b) Top Layer Metal 5520f (10a) Top Layer Silkscreen 10 W U U Figure 10. Evaluation Board Layout LT5520 PACKAGE DESCRIPTIO 4.35 ± 0.05 2.15 ± 0.05 2.90 ± 0.05 (4 SIDES) 0.30 ± 0.05 0.65 BCS RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. U UF Package 16-Lead Plastic QFN (4mm × 4mm) (Reference LTC DWG # 05-08-1692) BOTTOM VIEW—EXPOSED PAD 4.00 ± 0.10 (4 SIDES) 0.72 ± 0.05 PIN 1 TOP MARK 1 2.15 ± 0.10 (4-SIDES) 2 0.75 ± 0.05 R = 0.115 TYP 0.55 ± 0.20 15 16 PACKAGE OUTLINE 0.200 REF 0.00 – 0.05 NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. ALL DIMENSIONS ARE IN MILLIMETERS 3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 4. EXPOSED PAD SHALL BE SOLDER PLATED (UF) QFN 0802 0.30 ± 0.05 0.65 BSC 5520f 11 LT5520 RELATED PARTS PART NUMBER Infrastructure LT5511 LT5512 LT5515 LT5516 LT5522 RF Power Detectors LT5504 LTC5505 LTC5507 LTC5508 LTC5509 LTC5532 LT5500 LT5502 LT5503 LT5506 LT5546 800MHz to 2.7GHz RF Measuring Receiver RF Power Detectors with >40dB Dynamic Range 100kHz to 1000MHz RF Power Detector 300MHz to 7GHz RF Power Detector 300MHz to 3GHz RF Power Detector 300MHz to 7GHz Precision RF Power Detector 1.8GHz to 2.7GHz Receiver Front End 400MHz Quadrature IF Demodulator with RSSI 1.2GHz to 2.7GHz Direct IQ Modulator and Upconverting Mixer 500MHz Quadrature IF Demodulator with VGA 500MHz Ouadrature IF Demodulator with VGA and 17MHz Baseband Bandwidth 80dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply 300MHz to 3GHz, Temperature Compensated, 2.7V to 5.5V Supply 300MHz to 3GHz, Temperature Compensated, 2.7V to 5.5V Supply 44dB Dynamic Range, Temperature Compensated, SC70 Package 36dB Dynamic Range, Temperature Compensated, SC70 Package Precision VOUT Offset Control, Adjustable Gain and Offset 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer LO Buffer 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain, 8.8MHz Baseband Bandwidth 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –7dB to 56dB Linear Power Gain High Signal Level Upconverting Mixer DC-3GHz High Signal Level Downconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer RF Input to 3GHz, 20dBm IIP3, Integrated LO Buffer DESCRIPTION COMMENTS 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3,Integrated LO Quadrature Generator 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3,Integrated LO Quadrature Generator 600MHz to 2.7GHz High Signal Level Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF and LO Ports RF Receiver Building Blocks 5520f 12 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 q FAX: (408) 434-0507 q LT/TP 1103 1K • PRINTED IN USA www.linear.com © LINEAR TECHNOLOGY CORPORATION 2003