LTC1156 Quad High Side Micropower MOSFET Driver with Internal Charge Pump DESCRIPTIO
The LTC1156 quad High side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate drive voltage above the positive rail, fully enhancing an N-channel MOS switch with no external components. Micropower operation, with 16µA standby current and 95µA operating current, allows use in virtually all systems with maximum efficiency. Included on chip is independent over-current sensing to provide automatic shutdown in case of short circuits. A time delay can be added to the current sense to prevent false triggering on high in-rush current loads. The LTC1156 operates off of a 4.5V to 18V supply and is well suited for battery-powered applications, particularly where micropower “sleep” operation is required. The LTC1156 is available in both 16-pin DIP and 16-pin SOL packages.
FEATURES
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No External Charge Pump Components Fully Enhances N-Channel Power MOSFETs 16 Microamps Standby Current 95 Microamps ON Current Wide Power Supply Range 4.5V to 18V Controlled Switching ON and OFF Times Replaces P-Channel High Side Switches Compatible with Standard Logic Families Available in 16-pin SOL Package
APPLICATI
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S
Laptop Computer Power Switching SCSI Termination Power Switching Cellular Telephone Power Management P-Channel Switch Replacement Battery Charging and Management Low Frequency H-Bridge Driver Stepper Motor and DC Motor Control
TYPICAL APPLICATI
5V
Laptop Computer Power Management
100
+
10µF VS VS DS1 DS2 DS3 DS4 G1 G2 G3 G4 GND GND
0.1µF 100k
*30mΩ
SUPPLY CURRENT (µA)
5V
Si9956DY
HARD DISK DRIVE FLOPPY DISK DRIVE
LTC1156 IN1 CONTROL LOGIC OR µP IN2 IN3 IN4
Si9956DY
DISPLAY
PERIPHERAL ALL COMPONENTS SHOWN ARE SURFACE MOUNT. MINIMUM PARTS COUNT SHOWN. CURRENT LIMITS CAN BE SET SEPARATELY AND TAILORED TO INDIVIDUAL LOAD CHARACTERISTICS. * IMS026 INTERNATIONAL MANUFACTURING SERVICES, INC. (401) 683-9700
1156 TA01
U
UO
UO
Standby Supply Current
90 80 70 60 50 40 30 20 10 0 0
VIN1 = VIN2 = VIN3 = VIN4 = 0V TJ = 25°C
5
15 10 SUPPLY VOLTAGE (V)
20
LTC1156 G01
1
LTC1156 ABSOLUTE AXI U RATI GS
Operating Temperature Range LTC1156C ............................................. 0°C to 70°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec.)................. 300°C Supply Voltage ....................................................... 22V Input Voltage ..................... (VS + 0.3V) to (GND – 0.3V) Gate Voltage ....................... (VS + 24V) to (GND – 0.3V) Current (Any Pin)................................................. 50mA
PACKAGE/ORDER I FOR ATIO
TOP VIEW GND IN1 VS IN2 IN3 GND IN4 VS 1 2 3 4 5 6 7 8 16 G1 15 DS1 14 G2 13 DS2 12 DS3 11 G3 10 DS4 9 G4
ORDER PART NUMBER LTC1156CN
N PACKAGE 16-LEAD PLASTIC DIP TJMAX = 110°C, θJA = 120°C/W
Consult factory for Industrial and Military grade parts.
ELECTRICAL CHARACTERISTICS
SYMBOL VS IQ IQ IQ VINH VINL IIN CIN VSEN ISEN PARAMETER Supply Voltage Quiescent Current OFF Quiescent Current ON Quiescent Current ON Input High Voltage Input Low Voltage Input Current Input Capacitance Drain Sense Threshold Voltage Drain Sense Input Current (Note 1)
VS = 4.5V to 18V, TA = 25°C, unless otherwise noted.
MIN
q
CONDITIONS
VS = 5V, VIN = 0V (Note 2) VS = 5V, VIN = 5V (Note 3) VS = 12V, VIN = 5V (Note 3)
q q
0V < VIN < VS
0V < VSEN < VS VS = 5V VS = 6V VS = 12V VS = 5V, CGATE = 1000pF Time for VGATE > VS + 2V Time for VGATE > VS + 5V VS = 12V, CGATE = 1000pF Time for VGATE > VS + 5V Time for VGATE > VS + 10V
VGATE – VS Gate Voltage Above Supply
t ON
Turn-ON Time
2
U
U
W
WW U
W
TOP VIEW GND 1 IN1 2 VS 3 IN2 4 IN3 5 GND 6 IN4 7 VS 8 16 G1 15 DS1 14 G2 13 DS2 12 DS3 11 G3 10 DS4 9 S PACKAGE 16-LEAD PLASTIC SOL
TJMAX = 110°C, θJA = 130°C/W
ORDER PART NUMBER LTC1156CS
G4
TYP
MAX 18
UNITS V µA µA µA V
4.5 16 95 180 2.0
40 125 400
0.8 ±1.0 5
V µA pF
q
q q q q q
80 75
100 100
120 125 ± 0.1
mV mV µA V V V µs µs µs µs
6.0 7.5 15 50 200 50 120
7.0 8.3 18 250 1100 180 450
9.0 15.0 25 750 2000 500 1200
LTC1156
ELECTRICAL CHARACTERISTICS
SYMBOL t OFF PARAMETER Turn-OFF Time
VS = 4.5V to 18V, TA = 25°C, unless otherwise noted.
MIN 10 10 5 5 TYP 36 26 16 16 MAX 60 60 30 30 UNITS µs µs µs µs
CONDITIONS VS = 5V, CGATE = 1000pF Time for VGATE < 1V VS = 12V, CGATE = 1000pF Time for VGATE < 1V VS = 5V, CGATE = 1000pF Time for VGATE < 1V VS = 12V, CGATE = 1000pF Time for VGATE < 1V
t SC
Short Circuit Turn-OFF Time
The q denotes specifications which apply over the full operating temperature range. Note 1: Both VS pins (3 and 8) must be connected together, and both ground pins (1 and 6) must be connected together.
Note 2: Quiescent current OFF is for all channels in OFF condition. Note 3: Quiescent current ON is per driver and is measured independently.
TYPICAL PERFOR A CE CHARACTERISTICS
Standby Supply Current
100 90 80
SUPPLY CURRENT (µA)
VIN1 = VIN2 = VIN3 = VIN4 = 0V TJ = 25°C
SUPPLY CURRENT (µA)
70 60 50 40 30 20 10 0 0 5 15 10 SUPPLY VOLTAGE (V) 20
LTC1156 G01
600 500 400 300 200 100 0 0 5 15 10 SUPPLY VOLTAGE (V) 20
1156 G02
VGATE – VS (V)
Standby Supply Current
100 90 80 VIN1 = VIN2 = VIN3 = VIN4 = 0V 1000 900 800
SUPPLY CURRENT (µA)
70 60 50 40 30 20 10 0 –50 25 VS = 5V 50 25 0 75 TEMPERATURE (°C) 100 125 VS = 18V
SUPPLY CURRENT (µA)
500 400 300 200 100 0 –50 25 VS = 5V VS = 18V
VGATE (V)
UW
1156 G04
Supply Current per Channel ON
1000 900 800 700 ONE INPUT = ON OTHER INPUTS = OFF TJ = 25°C 24 22 20 18 16 14 12 10 8 6 4
High Side Gate Voltage
0
5
15 10 SUPPLY VOLTAGE (V)
20
LTC1156 G03
Supply Current per Channel ON
30
Low Side Gate Voltage
27 24 21 18 15 12 9 6 3
ONE INPUT = ON OTHER INPUTS = OFF
700 600
50 25 0 75 TEMPERATURE (°C)
100
125
0
0
2
6 8 4 SUPPLY VOLTAGE (V)
10
1158 G06
1156 G05
3
LTC1156
TYPICAL PERFOR A CE CHARACTERISTICS
Turn-ON Time
1000 900 800
TURN-ON TIME (µs)
CGATE = 1000pF
700 600 500 400 300 200 100 0 0 5 15 10 SUPPLY VOLTAGE (V) 20
1156 G07
TURN-OFF TIME (µs)
TURN-OFF TIME (µs)
VGS = 5V
VGS = 2V
BLOCK DIAGRA
VS
ANALOG SECTION
100mV REFERENCE LOW STANDBY CURRENT REGULATOR
IN
TTL-TO-CMOS CONVERTER
GND
OPERATIO
The LTC1156 contains four independent power MOSFET gate drivers and protection circuits (refer to the Block Diagram for detail). Each section of LTC1156 consists of the following functional blocks:
4
UW
ANALOG
Turn-OFF Time
50 45 40 35 30 25 20 15 10 5 0 0 5 15 10 SUPPLY VOLTAGE (V) 20
1156 G08
Short Circuit Turn-OFF Delay Time
50 45 40 35 30 25 20 15 10 5 0 0 5 15 10 SUPPLY VOLTAGE (V) 20
1156 G09
CGATE = 1000pF TIME FOR VGATE < 1V
CGATE = 1000pF TIME FOR VGATE < 1V VSEN = VS – 1V NO EXTERNAL DELAY
W
DRAIN SENSE 10µs DELAY COMP DIGITAL GATE CHARGE AND DISCHARGE CONTROL LOGIC R VOLTAGE REGULATORS ONE SHOT INPUT LATCH S OSCILLATOR AND CHARGE PUMP FAST/SLOW GATE CHARGE LOGIC GATE
1156 BD
U
TTL and CMOS Compatible Inputs Each driver input has been designed to accommodate a wide range of logic families. The input threshold is set at 1.3V with approximately 100mV of hysteresis.
LTC1156
OPERATIO
A voltage regulator with low standby current provides continuous bias for the TTL to CMOS converters. The TTL to CMOS converter output enables the rest of the circuitry. In this way the power consumption is kept to a minimum in the standby mode. Internal Voltage Regulation The output of the TTL to CMOS converter drives two regulated supplies which power the low voltage CMOS logic and analog blocks. The regulator outputs are isolated from each other so that the noise generated by the charge pump logic is not coupled into the 100mV reference or the analog comparator. Gate Charge Pump Gate drive for the power MOSFET is produced by an adaptive charge pump circuit which generates a gate voltage substantially higher than the power supply voltage. The charge pump capacitors are included on chip and therefore no external components are required to generate the gate drive.
TYPICAL APPLICATI
+ +
4-Cell Extremely Low Voltage Drop Regulator and Three Load Switches with Short-Circuit Protection and 20µA Standby Current
5.2V TO 6V 4-CELL NiCd BATTERY PACK 47µF VS VS
REG ON/OFF
CONTROL LOGIC FAULT
UO
U
Drain Current Sense The LTC1156 is configured to sense the drain current of the power MOSFET in high side applications. An internal 100mV reference is compared to the drop across a sense resistor (typically 0.002Ω to 0.1Ω) in series with the drain lead. If the drop across this resistor exceeds the internal 100mV threshold, the input latch is reset and the gate is quickly discharged by a large N-channel transistor. A simple RC network can be added to delay the over-current protection so that large in-rush current loads such as lamps or capacitors can be started. Supply and Ground Pins
The two supply pins (3 and 8) of the LTC1156 must be connected together at all times and the two ground pins (1 and 6) must be connected together at all times. The two supply pins should be connected to the “top” of the drain current sense resistor/s to ensure accurate sensing.
For further applications information, see the LTC1155 Dual High Side Micropower MOSFET Driver data sheet.
S
0.1µF 100k DS1 100k G1 0.1µF IN1 IN2 IN3 IN4 GND GND 10k 1N4148 8 7 * CAPACITOR ESR LESS THAN 0.5Ω ** RCS02 ULTRONIX (303) 242-0810 LTC1156 G2 G3 G4 200pF DS2 DS3 DS4
**0.03Ω
3.3A MAX
IRLR024 5V/2A SWITCHED
2 × Si9956DY
1 3 LT1431 4 5V LOAD 5V LOAD 5V LOAD
+
6 5 *470µF
1156 TA02
5
LTC1156
TYPICAL APPLICATI
24V – 30V
1N4746 18V 5V
CONTROL LOGIC OR µP
Automotive Triple High Side Switch with Reverse Battery Interrupt, Short-Circuit and High-Voltage Transient Protection (20µA Standby Current)
6V – 16V 10µF
100k INPUT 1 100k INPUT 2 100k INPUT 3 3 × 0.1µF IN4 GND GND IN3 IN2 LTC1156 DS3 30k G3 DS4 30k G4
6
UO
+
S
24V to 30V Quad Industrial Switch with Thermal Shutdown +
10µF 50V
2k
1µF 25V
VS
VS
RT1* 100°C DS1 DS2 DS3 DS4 G1 G2 G3 G4 IRF530 M IRF530 240k IRF530
LTC1156 IN1 IN2 IN3 IN4 GND GND
IRF530
* KEYSTONE RL2006-100-100-30-PT MOUNT ON HEATSINK.
1156 TA03
+
18V 1N4746
100k
0.1µF 200k
1N4148 15V 1N5245A
IRFZ44
150Ω
VS VS DS1 G1 100k IN1 G2 DS2 30k 24V 1N5252A OUTPUT 1 3 × IRFZ24
24V 1N5252A
OUTPUT 2
24V 1N5252A
OUTPUT 3
150Ω 1/2W
1156 TA04
LTC1156
TYPICAL APPLICATI
6V
5V
CONTROL LOGIC
Full H-Bridge Driver with Short-Circuit Protection and 16µA Standby Current Low Frequency Operation (
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