LTC1693-2CS8

LTC1693 High Speed Single/Dual MOSFET Drivers FEATURES s s DESCRIPTIO s s s s s s s Dual MOSFET Drivers in SO-8 Package or Single MOSFET Driver in MSOP Package 1GΩ Electrical Isolation Between the Dual Drivers Permits High/Low Side Gate Drive 1.5A Peak Output Current 16ns Rise/Fall Times at VCC = 12V, CL = 1nF Wide VCC Range: 4.5V to 13.2V CMOS Compatible Inputs with Hysteresis, Input Thresholds are Independent of VCC Driver Input Can Be Driven Above VCC Undervoltage Lockout Thermal Shutdown The LTC®1693 family drives power MOSFETs at high speed. The 1.5A peak output current reduces switching losses in MOSFETs with high gate capacitance. The LTC1693-1 contains two noninverting drivers. The LTC1693-2 contains one noninverting and one inverting driver. The LTC1693-1 and LTC1693-2 drivers are electrically isolated and independent. The LTC1693-3 is a single driver with an output polarity select pin. The LTC1693 has VCC independent CMOS input thresholds with 1.2V of typical hysteresis. The LTC1693 can level-shift the input logic signal up or down to the rail-torail VCC drive for the external MOSFET. The LTC1693 contains an undervoltage lockout circuit and a thermal shutdown circuit. Both circuits disable the external N-channel MOSFET gate drive when activated. The LTC1693-1 and LTC1693-2 come in an 8-lead SO package. The LTC1693-3 comes in an 8-lead MSOP package. , LTC and LT are registered trademarks of Linear Technology Corporation. APPLICATIO S s s s s s Power Supplies High/Low Side Drivers Motor/Relay Control Line Drivers Charge Pumps TYPICAL APPLICATIO VIN 48VDC ±10% RETURN Two Transistor Foward Converter + C1 330µF 63V C2 1.5µF 63V R1 0.068Ω Q1 MTD20NO6HD 12V C5 1µF 17 C11 0.1µF C9 1800pF 5% NPO R5 2.49k 1% 1 2 4 3 5 6 7 10 C10 0.1µF C14 3300pF R9 12k C12 100pF 12VIN BOOST LT1339 SYNC 5VREF SL/ADJ CT IAVG SS VC VREF SGND C15 0.1µF 8 TS SENSE + SENSE – BG PHASE RUN/SHDN VFB PGND 15 18 11 TG 20 19 BAT54 R6 100Ω LTC1693CS8-2 1 8 VCC1 IN1 2 7 GND1 OUT1 3 6 IN2 VCC2 4 5 GND2 OUT2 C13 1µF D2 MURS120 LTC1693CS8-2 1 8 VCC1 IN1 2 7 GND1 OUT1 3 6 VCC2 IN2 4 5 GND2 OUT2 C7 1µF C8 1µF T1 13:2 • D3 MURS120 Q3 MTD20NO6HD D4 MBRO530T1 12 R7 100Ω 16 14 13 9 R10 10k 1% R8 301k 1% C1: SANYO 63MV330GX C2: WIMA SMD4036/1.5/63/20/TR C6: KEMET T510X477M006AS (×8) L1: GOWANDA 50-318 T1: GOWANDA 50-319 1693 TA01 U D1 MURS120 L1 1.5µH C3 4700pF 25V R2 5.1Ω Q2 Si4420 ×2 VOUT 1.5V/15A C4 0.1µF R3 249Ω 1% R4 1.24k 1% U U • + Q4 Si4420 C6 470µF 6.3V ×8 RETURN 1 LTC1693 ABSOLUTE MAXIMUM RATINGS (Note 1) Supply Voltage (VCC) .............................................. 14V Inputs (IN, PHASE) ................................... – 0.3V to 14V Driver Output ................................. – 0.3V to VCC + 0.3V GND1 to GND2 (Note 5) ..................................... ±100V PACKAGE/ORDER INFORMATION TOP VIEW IN1 1 GND1 2 IN2 3 GND2 4 8 7 6 5 VCC1 OUT1 VCC2 OUT2 IN1 1 GND1 2 IN2 3 GND2 4 TOP VIEW 8 7 6 5 VCC1 OUT1 VCC2 OUT2 IN NC PHASE GND 1 2 3 4 TOP VIEW 8 7 6 5 VCC OUT NC NC S8 PACKAGE 8-LEAD PLASTIC SO TJMAX = 150°C, θJA = 135°C/ W S8 PACKAGE 8-LEAD PLASTIC SO TJMAX = 150°C, θJA = 135°C/ W ORDER PART NUMBER LTC1693-1CS8 S8 PART MARKING 16931 ORDER PART NUMBER LTC1693-2CS8 Consult factory for Industrial and Military grade parts. The q denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, unless otherwise noted. SYMBOL PARAMETER VCC ICC ICC(SW) Input VIH VIL IIN VPH IPH Output VOH VOL RONL RONH IPKL IPKH High Output Voltage Low Output Voltage Output Pull-Down Resistance Output Pull-Up Resistance Output Low Peak Current Output High Peak Current IOUT = – 10mA IOUT = 10mA q q ELECTRICAL CHARACTERISTICS Supply Voltage Range Quiescent Current Switching Supply Current CONDITIONS LTC1693-1, LTC1693-2, IN1 = IN2 = 0V (Note 2) LTC1693-3, PHASE = 12V, IN = 0V LTC1693-1, LTC1693-2, COUT = 4.7nF, fIN = 100kHz LTC1693-3, COUT = 4.7nF, fIN = 100kHz q q q q High Input Threshold Low Input Threshold Input Pin Bias Current PHASE Pin High Input Threshold PHASE Pin Pull-Up Current (Note 3) PHASE = 0V (Note 3) 2 U U W WW U W Junction Temperature .......................................... 150°C Operating Ambient Temperature Range ....... 0°C to 70°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C MS8 PACKAGE 8-LEAD PLASTIC MSOP TJMAX = 150°C, θJA = 200°C/ W S8 PART MARKING 16932 ORDER PART NUMBER LTC1693-3CMS8 MS8 PART MARKING LTEB MIN 4.5 400 200 TYP 720 360 14.4 7.2 MAX 13.2 1100 550 20 10 3.1 1.7 ± 10 6.5 45 UNITS V µA µA mA mA V V µA V µA V q q q q q 2.2 1.1 4.5 10 11.92 2.6 1.4 ± 0.01 5.5 20 11.97 30 2.85 3.00 1.70 1.40 75 mV Ω Ω A A LTC1693 The q denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, unless otherwise noted. SYMBOL PARAMETER Switching Timing (Note 4) tRISE tFALL tPLH tPHL Output Rise Time Output Fall Time Output Low-High Propagation Delay Output High-Low Propagation Delay COUT = 1nF COUT = 4.7nF COUT = 1nF COUT = 4.7nF COUT = 1nF COUT = 4.7nF COUT = 1nF COUT = 4.7nF q q q q q q q q ELECTRICAL CHARACTERISTICS CONDITIONS MIN TYP 17.5 48.0 16.5 42.0 38.0 40.0 32 35 MAX 35 85 35 75 70 75 70 75 UNITS ns ns ns ns ns ns ns ns GΩ Driver Isolation RISO GND1-GND2 Isolation Resistance LTC1693-1, LTC1693-2 GND1-to-GND2 Voltage = 75V q 0.075 1 Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Supply current is the total current for both drivers. Note 3: Only the LTC1693-3 has a PHASE pin. Note 4: All AC timing specificatons are guaranteed by design and are not production tested. Note 5: Only applies to the LTC1693-1 and LTC1693-2. TYPICAL PERFOR A CE CHARACTERISTICS IN Threshold Voltage vs VCC 2.75 TA = 25°C INPUT THRESHOLD VOLTAGE (V) INPUT THRESHOLD VOLTAGE (V) 2.50 VIH 2.25 2.00 1.75 1.50 1.25 1.00 5 6 7 9 8 VCC (V) 10 11 12 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 – 50 –25 0 75 50 25 TEMPERATURE (°C) VIL VIH INPUT THRESHOLD HYSTERESIS (V) VIL UW 1693 G01 IN Threshold Voltage vs Temperature 3.00 VCC = 12V 1.4 1.3 1.2 IN Threshold Hysteresis vs Temperature VCC = 12V VIH-VIL 1.1 1.0 0.9 0.8 – 50 100 125 – 25 0 50 25 75 TEMPERATURE (°C) 100 125 1693 G02 1693 G03 3 LTC1693 TYPICAL PERFOR A CE CHARACTERISTICS PHASE Threshold Voltage vs VCC 6 PHASE THRESHOLD VOLTAGE (V) 5 VPH(H) 4 VPH(L) 3 2 1 0 5 6 7 9 8 VCC (V) 10 11 12 TIME (ns) TA = 25°C 24 22 20 18 tFALL 16 14 12 10 5 6 7 9 8 VCC (V) 10 11 12 TIME (ns) Rise/Fall Time vs COUT 120 TA = 25°C VCC = 12V 100 fIN = 100kHz 80 TIME (ns) TIME (ns) TIME (ns) 60 40 20 0 1 10 100 COUT (pF) 1000 10000 1693 G07 tRISE tFALL Propagation Delay vs COUT 50 OUTPUT SATURATION VOLTAGE (mV) TA = 25°C VCC = 12V fIN = 100kHz 150 VOL (50mA) 100 40 QUIESCENT CURRENT (µA) TIME (ns) tPLH 30 tPHL 20 1 10 100 COUT (pF) 1000 10000 1693 G10 4 UW 1693 G04 Rise/Fall Time vs VCC TA = 25°C COUT = 1nF fIN = 100kHz 20 19 18 17 Rise/Fall Time vs Temperature VCC = 12V COUT = 1nF fIN = 100kHz tRISE tRISE 16 15 14 13 12 11 10 –50 –25 tFALL 50 25 0 75 TEMPERATURE (°C) 100 125 1693 G05 1693 G06 Propagation Delay vs VCC 55 50 45 40 35 30 25 20 tPHL tPLH TA = 25°C COUT = 1nF fIN = 100kHz Propagation Delay vs Temperature 50 45 40 tPLH 35 tPHL 30 25 VCC = 12V COUT = 1nF fIN = 100kHz 15 10 5 6 7 8 9 VCC (V) 10 11 12 20 – 50 – 25 50 25 75 0 TEMPERATURE (°C) 100 125 1693 G08 1693 G09 Output Saturation Voltage vs Temperature 200 350 Quiescent Current vs VCC (Single Driver) TA = 25°C VIN = 0V VCC = 12V VOH (50mA) wrt VCC 300 250 200 50 VOH (10mA) wrt VCC VOL (10mA) 0 – 55 – 35 –15 150 100 5 25 45 65 85 105 125 TEMPERATURE (°C) 1693 G11 5 6 7 9 8 VCC (V) 10 11 12 1693 G12 LTC1693 TYPICAL PERFOR A CE CHARACTERISTICS Switching Supply Current vs COUT (Single Driver) 100 SWITCHING SUPPLY CURRENT (mA) 90 80 70 TA = 25°C VCC = 12V 50 40 30 20 10 0 1 10 100 COUT (pF) 1000 10000 1693 G13 VOL (mV) 60 VOH vs Output Current 350 300 250 TA = 25°C VCC = 12V POWER DISSIPATION (mW) 1400 1200 1000 VOH (mV) 200 150 100 50 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 G15 UW VOL vs Output Current 300 250 200 VOL 150 100 50 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 G14 VCC = 12V TA = 25°C 750kHz 200kHz 100kHz 25kHz 500kHz Thermal Derating Curves TJ = 125°C VOH LTC1693-1/LTC1693-2 800 600 LTC1693-3 400 200 0 – 55 – 35 –15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (°C) 1693 G16 5 LTC1693 PIN FUNCTIONS SO-8 Package (LTC1693-1, LTC1693-2) IN1, IN2 (Pins 1, 3): Driver Inputs. The inputs have VCC independent thresholds with 1.2V typical hysteresis to improve noise immunity. GND1, GND2 (Pins 2, 4): Driver Grounds. Connect to a low impedance ground. The VCC bypass capacitor should connect directly to this pin. The source of the external MOSFET should also connect directly to the ground pin. This minimizes the AC current path and improves signal integrity. The ground pins should not be tied together if isolation is required between the two drivers of the LTC1693-1 and the LTC1693-2. OUT 1, OUT2 (Pins 5, 7): Driver Outputs. The LTC16931’s outputs are in phase with their respective inputs (IN1, IN2). The LTC1693-2’s topside driver output (OUT1) is in phase with its input (IN1) and the bottom side driver’s output (OUT2) is opposite in phase with respect to its input pin (IN2). VCC1, VCC2 (Pins 6, 8): Power Supply Inputs. MSOP Package (LTC1693-3) IN (Pin 1): Driver Input. The input has VCC independent thresholds with hysteresis to improve noise immunity. NC (Pins 2, 5, 6): No Connect. PHASE (Pin 3): Output Polarity Select. Connect this pin to VCC or leave it floating for noninverting operation. Ground this pin for inverting operation. The typical PHASE pin input current when pulled low is 20µA. GND (Pin 4): Driver Ground. Connect to a low impedance ground. The VCC bypass capacitor should connect directly to this pin. The source of the external MOSFET should also connect directly to the ground pin. This minimizes the AC current path and improves signal integrity. OUT (Pin 7): Driver Output. VCC (Pin 8): Power Supply Input. BLOCK DIAGRA SM IN1 GND1 IN2 GND2 1 2 3 4 LTC1693-1 DUAL NONINVERTING DRIVER 6 W U U U 8 7 6 5 VCC1 OUT1 VCC2 OUT2 IN2 GND2 IN1 GND1 8 1 2 6 3 4 5 7 VCC1 OUT1 VCC2 OUT2 PHASE NC IN GND 8 1 4 3 2 6 5 7 VCC OUT NC NC LTC1693-2 TOPSIDE NONINVERTING DRIVER AND BOTTOM SIDE INVERTING DRIVER LTC1693-3 SINGLE DRIVER WITH POLARITY SELECT 1693 BD LTC1693 TEST CIRCUITS 1/2 LTC1693-1 OR 1/2 LTC1693-2 87V VCC1 8 4.7µF 12VP-P 75V 1/2 LTC1693-1 OR 1/2 LTC1693-2 12V 4.7nF 0.1µF 1 IN1 OUT1 7 A 2 GND1 VCC2 6 4.7µF 4.7nF 0.1µF + – 75V 3 IN2 OUT2 5 1693 TC03 4 GND2 1693 TC02 75V High Side Switching Test LTC1693-1, LTC1693-2 Ground Isolation Test VCC = 12V 4.7µF 0.1µF IN 5V OUT 1nF OR 4.7nF tRISE/FALL < 10ns 1693 TC01 AC Parameter Measurements TI I G DIAGRA W INPUT RISE/FALL TIME < 10ns INPUT VIH VIL NONINVERTING OUTPUT tr tPLH INVERTING OUTPUT 90% 10% tf tPHL tr tPLH 1693 TD UW 90% 10% tf tPHL 7 LTC1693 APPLICATIONS INFORMATION Overview The LTC1693 single and dual drivers allow 3V- or 5V-based digital circuits to drive power MOSFETs at high speeds. A power MOSFET’s gate-charge loss increases with switching frequency and transition time. The LTC1693 is capable of driving a 1nF load with a 16ns rise and fall time using a VCC of 12V. This eliminates the need for higher voltage supplies, such as 18V, to reduce the gate charge losses. The LTC1693’s 360µA quiescent current is an order of magnitude lower than most other drivers/buffers. This improves system efficiency in both standby and switching operation. Since a power MOSFET generally accounts for the majority of power loss in a converter, addition of the LT1693 to a high power converter design greatly improves efficiency, using very little board space. The LTC1693-1 and LTC1693-2 are dual drivers that are electrically isolated. Each driver has independent operation from the other. Drivers may be used in different parts of a system, such as a circuit requiring a floating driver and the second driver being powered with respect to ground. Input Stage The LTC1693 employs 3V CMOS compatible input thresholds that allow a low voltage digital signal to drive standard power MOSFETs. The LTC1693 incorporates a 4V internal regulator to bias the input buffer. This allows the 3V CMOS compatible input thresholds (VIH = 2.6V, VIL = 1.4V) to be independent of variations in VCC. The 1.2V hysteresis between VIH and VIL eliminates false triggering due to ground noise during switching transitions. The LTC1693’s input buffer has a high input impedance and draws less than 10µA during standby. Output Stage The LTC1693’s output stage is essentially a CMOS inverter, as shown by the P- and N-channel MOSFETs in Figure 1 (P1 and N1). The CMOS inverter swings rail-torail, giving maximum voltage drive to the load. This large voltage swing is important in driving external power MOSFETs, whose RDS(ON) is inversely proportional to its gate overdrive voltage (VGS – VT). VCC V+ LEQ (LOAD INDUCTOR OR STRAY LEAD INDUCTANCE) VDRAIN P1 CGD OUT POWER MOSFET N1 GND 1693 F01 8 U W U U LTC1693 CGS Figure 1. Capacitance Seen by OUT During Switching The LTC1693’s output peak currents are 1.4A (P1) and 1.7A (N1) respectively. The N-channel MOSFET (N1) has higher current drive capability so it can discharge the power MOSFET’s gate capacitance during high-to-low signal transitions. When the power MOSFET’s gate is pulled low by the LTC1693, its drain voltage is pulled high by its load (e.g., a resistor or inductor). The slew rate of the drain voltage causes current to flow back to the MOSFETs gate through its gate-to-drain capacitance. If the MOSFET driver does not have sufficient sink current capability (low output impedance), the current through the power MOSFET’s Miller capacitance (CGD) can momentarily pull the gate high, turning the MOSFET back on. Rise/Fall Time Since the power MOSFET generally accounts for the majority of power lost in a converter, it’s important to quickly turn it either fully “on” or “off” thereby minimizing the transition time in its linear region. The LTC1693 has rise and fall times on the order of 16ns, delivering about 1.4A to 1.7A of peak current to a 1nF load with a VCC of only 12V. The LTC1693’s rise and fall times are determined by the peak current capabilities of P1 and N1. The predriver, shown in Figure 1 driving P1 and N1, uses an adaptive method to minimize cross-conduction currents. This is done with a 6ns nonoverlapping transition time. N1 is fully turned off before P1 is turned-on and vice-versa using this 6ns buffer time. This minimizes any cross-conduction currents while N1 and P1 are switching on and off yet is short enough to not prolong their rise and fall times. LTC1693 APPLICATIONS INFORMATION Driver Electrical Isolation The LTC1693-1 and LTC1693-2 incorporate two individual drivers in a single package that can be separately connected to GND and VCC connections. Figure 2 shows a circuit with an LTC1693-2, its top driver left floating while the bottom LTC1693-2 VCC1 VIN IN1 OUT1 N1 GND1 • VCC2 IN2 V+ OUT2 N2 GND2 1693 F02 Figure 2. Simplified LTC1693-2 Floating Driver Application OTHER PRIMARY-SIDE CIRCUITS OTHER SECONDARY-SIDE CIRCUITS • LTC1693-1 VCC1 V+ • IN1 OUT1 GND1 VCC2 V+ IN2 OUT2 GND2 1693 F03 Figure 3. Simplified LTC1693-1 Application with Different Ground Potentials U W U U driver is powered with respect to ground. Similarly Figure 3 shows a simplified circuit of a LTC1693-1 which is driving MOSFETs with different ground potentials. Because there is 1GΩ of isolation between these drivers in a single package, ground current on the secondary side will not recirculate to the primary side of the circuit. Power Dissipation To ensure proper operation and long term reliability, the LTC1693 must not operate beyond its maximum temperature rating. Package junction temperature can be calculated by: TJ = TA + PD(θJA) where: TJ = Junction Temperature TA = Ambient Temperature PD = Power Dissipation θJA = Junction-to-Ambient Thermal Resistance Power dissipation consists of standby and switching power losses: PD = PSTDBY + PAC where: PSTDBY = Standby Power Losses PAC = AC Switching Losses The LTC1693 consumes very little current during standby. This DC power loss per driver at VCC = 12V is only (360µA)(12V) = 4.32mW. AC switching losses are made up of the output capacitive load losses and the transition state losses. The capactive load losses are primarily due to the large AC currents needed to charge and discharge the load capacitance during switching. Load losses for the CMOS driver driving a pure capacitive load COUT will be: Load Capacitive Power (COUT) = (COUT)(f)(VCC)2 The power MOSFET’s gate capacitance seen by the driver output varies with its VGS voltage level during switching. A power MOSFET’s capacitive load power dissipation can be calculated by its gate charge factor, QG. The QG value 9 LTC1693 APPLICATIONS INFORMATION corresponding to MOSFET’s VGS value (VCC in this case) can be readily obtained from the manafacturer’s QGS vs VGS curves: Load Capacitive Power (MOS) = (VCC)(QG)(f) Transition state power losses are due to both AC currents required to charge and discharge the drivers’ internal nodal capacitances and cross-conduction currents in the internal gates. UVLO and Thermal Shutdown The LTC1693’s UVLO detector disables the input buffer and pulls the output pin to ground if VCC < 4V. The output remains off from VCC = 1V to VCC = 4V. This ensures that during start-up or improper supply voltage values, the LTC1693 will keep the output power MOSFET off. The LTC1693 also has a thermal detector that similarly disables the input buffer and grounds the output pin if junction temperature exceeds 145°C. The thermal shutdown circuit has 20°C of hysteresis. This thermal limit helps to shut down the system should a fault condition occur. Input Voltage Range LTC1693’s input pin is a high impedance node and essentially draws neligible input current. This simplifies the input drive circuitry required for the input. The LTC1693 typically has 1.2V of hysteresis between its low and high input thresholds. This increases the driver’s robustness against any ground bounce noises. However, care should still be taken to keep this pin from any noise pickup, especially in high frequency switching applications. In applications where the input signal swings below the GND pin potential, the input pin voltage must be clamped to prevent the LTC1693’s parastic substrate diode from turning on. This can be accomplished by connecting a series current limiting resistor R1 and a shunting Schottky diode D1 to the input pin (Figure 4). R1 ranges from 100Ω to 470Ω while D1 can be a BAT54 or 1N5818/9. GND INPUT SIGNAL GOING BEL0W GND PIN POTENTIAL R1 IN VCC 10 U W U U LTC1693 D1 PARASITIC SUBSTRATE DIODE 1693 F04 Figure 4 Bypassing and Grounding LTC1693 requires proper VCC bypassing and grounding due to its high speed switching (ns) and large AC currents (A). Careless component placement and PCB trace routing may cause excessive ringing and under/overshoot. To obtain the optimum performance from the LTC1693: A. Mount the bypass capacitors as close as possible to the VCC and GND pins. The leads should be shortened as much as possible to reduce lead inductance. It is recommended to have a 0.1µF ceramic in parallel with a low ESR 4.7µF bypass capacitor. For high voltage switching in an inductive environment, ensure that the bypass capacitors’ VMAX ratings are high enough to prevent breakdown. This is especially important for floating driver applications. B. Use a low inductance, low impedance ground plane to reduce any ground drop and stray capacitance. Remember that the LTC1693 switches 1.5A peak currents and any significant ground drop will degrade signal integrity. C. Plan the ground routing carefully. Know where the large load switching current is coming from and going to. Maintain separate ground return paths for the input pin and output pin. Terminate these two ground traces only at the GND pin of the driver (STAR network). D. Keep the copper trace between the driver output pin and the load short and wide. SLIC Power Supply D6 12V 500mW D4 MBR1100 1 4 T1E NOT USED T1B 123µH 33T #30 CA1 220µF 35V TYPICAL APPLICATIONS GND CA3 220µF 35V CA2 220µF 35V • R10 32k 1% C12 0.1µF X7R L1 100µH 10 5 R3 0.010Ω 3 D5 MUR120 8 1 6 R7 1k 5% U4 LT1006S8 7 2 U2 LTC1266A 1 TDRIVE BDRIVE PGND LBOUT LBIN SGND SHDN VFB SENSE + C5 1nF 9 Q1 IRL2505 10 11 RX1 24Ω 1/2W 12 CB1 120µF 63V C10 0.1µF 50V CB2 120µF 63V 13 C6 1nF 50V 14 T1C 33T #30 + 7 15 2 PWR VIN 2 3 PINV BINH VIN CT ITH SENSE – 4 5 6 7 8 R2 100Ω 16 R5 100Ω T1A 9.2µH 9T 4 × #26 – 24V 240mA VIN 5V + • •6 Q3 MTD2N20 + C7 0.1µF 25V •8 T1D 33T #30 9 C11 120pF 5% NPO C4 0.1µF U1 LTC1693-2 1 IN1 GND1 IN2 GND2 OUT2 5 C3 0.1µF C2 0.33µF + VIN D2 MMSD4148 VCC2 6 C8 0.1µF 16V 6 C1 100pF R1 10k D3 MMSD4148 OUT1 7 2 3 4 VCC1 8 R4 43k RF1 2.49k 1% RF2 47.5k 1% – 24V 7 1 C9 10nF 50V U3 LT1006S8 C12 1nF 5% – 8 2 R6 1.2k 3 T1: PHILIPS EFD25-3C85 FIRST WIND T1B, T1C AND T1D TRIFILAR SECOND WIND T1A QUADFILAR AIR GAP: 0.88mm OR 2 × 0.44mm SPACERS 4 + + +V1 – GND CIN2 330µF 6.3V + CIN1 330µF 6.3V RF3 24.3k 0.1% C11 0.1µF 100V 3 4 R8 10k 1% R9 4.99k C13 10nF 100V RF4 46.4k 0.1% CB3 39µF 100V 1693 TA03 – 70V 200mA U • • + + + + LTC1693 11 LTC1693 TYPICAL APPLICATIONS Negative-to-Positive Synchronous Boost Converter VOUT 3.3V 6A L2** 1µH VS + C3 330µF 6.3V ×2 + C2 330µF 6.3V ×5 + C1 330µF 6.3V ×5 VIN –5V R6 10Ω 2 3 SENSE – SENSE – PWR VIN PINV BINH VIN CT ITH 7 12 15 U1 LTC1266 TDRV BDRV LBI SHDN LBO SGND PGND VFB 10 + C6 10µF 16V 4 5 6 C5 0.1µF C7 390pF C9 0.015µF C8 1500pF R7 1k 12 U 9 D2 MBRO530 D1 MBRS130 Q2 Si4420 ×2 6 5 U2B LTC1693-2 4 3 R5 2.2Ω R1 0.015Ω 1W R2 0.015Ω 1W R3 100Ω L1* 4.8µH C12 4700pF C13 0.1µF + C14 10µF 16V D4 MBRO530 R19 1k C17 100pF C11 4700pF Q1 Si4420 ×2 D3 MBRO530 8 7 U2A LTC1693-2 2 1 C15 0.1µF D5 MBRO530 Q6 2N3904 R16 3.6k R4 2.2Ω + C16 10µF 16V R14 51Ω R15 1.2k C4 1000pF 8 1 16 13 11 14 R8 30.1k R10 100k R11 100k Q4 2N3906 Q3 2N7002 *PANASONIC ETQPAF4R8HA **COILCRAFT DO3316P-102 Q5 2N3906 R17 6.81k 3.3V R18 6.81k VS C10 220pF R9 13k R12 4.75k R13 1.30k 1693 TA03 Multiple Output Telecom Power Supply Q4 FZT694B + V1 QO1 Si9803 LO1 1µH D3 MMSD4148 RF1 42.2k 1% R9 1M D7 BAV21 C3 0.1µF 100V R2 22Ω C4 1nF 50V Q1 2N5401 • TYPICAL APPLICATIONS 5V 0.8A T1A 3T 12 #28 2 T1B 1T #28 D8 BAV21 D6 3.3V 500mW LO2 2.2µH GND U2 LTC1266A 11 + • 1 TDRIVE BDRIVE 16 + • 2 3 PINV LBOUT LBIN 13 4 PWR VIN PGND 14 15 3 T1C 2T #28 10 DO3 MBRM140 – VIN –24V TO – 35V CIN1 220µF 50V CIN2 220µF 50V QO2 Si9803 T1F 7 32T #28 50µH 6 3.3V 0.3A LO3 2.2µH BINH + CO2A 330µF 6.3V + + CO3A 330µF 6.3V + CO2B 330µF 6.3V 2.5V 0.3A CO3B 330µF 6.3V + V1 6 7 CT SHDN 10 VIN 11 SGND 5 Q2 IRF620 12 R11 12.1k C7 0.1µF 25V 4 T1D 3T #28 9 DO4 MBRM140 8 SENSE – 8 C2 0.1µF + V1 R3 0.1Ω 8 7 6 5 RX1 120Ω 1/2W C5 1nF T1E 9T #28 ITH C11 120pF 5% NPO 9 SENSE + VFB R5 100Ω CX1 220pF 50V 5 R7 4.7Ω 5V R8 1k Q3 2N2222 CC1 10nF CC2 100pF 5% U1 LTC1693-1 1 IN1 GND1 IN2 GND2 OUT2 VCC2 OUT1 2 3 4 VCC1 RCL 6.8k + CO4 220µF 25V R6 10Ω D9 5.6V 0.5W C9 1nF D10 1N4148 R4 390Ω C6 100pF NPO C11 0.1µF 100V CO4B 0.1µF 16V – 5V 30mA 1693 TA04 T1 TRANSFORMER COILTRONICS VP4-TYPE WINDING # TURNS AWG T1A 3 28 T1B 1 28 T1C 2 28 T1D 3 28 T1E 9 28 T1F 32 28 T1 WINDING ORDER: 1. T1A, T1B, T1C, T1D QUAD-FILAR, WOUND FIRST, AFTER T1A, T1B, T1C AND T1D WOUND, REMOVE 2 TURNS FROM T1B AND 1 TURN FROM T1C 2. T1E WOUND ON TOP, SPREAD EVENLY 3. LAYER OF INSULATION 4. T1F WOUND ON TOP, SPREAD EVENLY T1 CORE: COILTRONICS VP4-TYPE, AIR GAP, 0.7mm or 2 × 0.35mm SPACERS PRIMARY INDUCTANCE OF T1F = 50µH ALTERNATIVE CORES: SIEMENS EFD20, N67 MATERIAL, TDK PC40-EPC17 U R1 47k D1 6.2V 500mW + C1 220µF 16V D2 MMSD4148 1 + CO1A 330µF 6.3V + CO1B 330µF 6.3V • • • LTC1693 13 48V to 5V Isolated Synchronous Forward DC/DC Converter +VIN 10Ω 47Ω +VOUT FMMT718 T1 W1 10Ω SUD30N04-10 MURS120 W5 LTC1693-1 4 3 8 1 IN1 GND1 W3 4.7k BAT54 3 T2 1 4.7k BAT54 470Ω 4 GND2 GND1 2 IN1 OUT1 7 W4 4.7nF IN2 OUT2 5 VCC1 VCC2 4.7µF 25V 1µF 0.22µF MMFT3904 8 6 3.1V FMMT718 P 2.2µF 10Ω 0.025Ω 1/2W 470Ω 2 VCC1 OUT1 LTC1693-1 FZT600 7 IN2 OUT2 10Ω T2 470Ω 5 4.7nF GND2 VCC2 6 2k 0.47µF 50V IRF1310NS SUD30N04-10 C3, C4, C5: SANYO OS-CON –VOUT 10Ω BAS21 W4 1nF –VOUT 1nF SEC HV 12V 10Ω OUTPUT 5V/10A IRF1310NS +VOUT SEC HV 4.8µH PANASONIC ETQP AF4R8H LTC1693 TYPICAL APPLICATIONS INPUT 36V TO 75V C1 1.2µF 100V CER C2 1.2µF 100V CER P MURS120 –VIN MMBD914LT1 20 1µF T2 W1 19 18 11 12 P BG VFB 9 16 3.3Ω 470Ω 3 2 4 1k +VOUT +VIN VBOOST SENSE + SENSE – COMP RTOP 12VIN LT1339 RUN/SHDN V+ 36k TG TS 17 3.01k 1% 1 COLL REF 8 1k 0.01µF 100k 13 SYNC 5VREF 14 CT SL/ADJ IAVG VREF SGND PGND SS GND-F GND-S 13k 4.53k 2.2nF 1µF 2.2nF 4.7nF 0.1µF 100k 1 2 3 4 5 10 8 15 6 7 CNY17-3 RMID 0.1µF VC PHASE 100k 6 5 7 LT1431CS8 2.4k 95 9.31k 1% 4.42k 1% SHORT JP1 FOR 5VOUT + 68µF 20V AVX TSPE 3.9k –VOUT T2 ER11/5 CORE AI = 960µH T1 W3 W1, 10T 32AWG, W2, 15T 32AWG T1 PHILIPS EFD20-3F3 CORE LP = 720µH (AI = 1800) W5, 10T 2 x 26AWG W4, 7T 6 x 26AWG W1, 18T BIFILAR 31AWG W3, 6T BIFILAR 31AWG W1, 10T 2 x 26AWG 2MIL POLY FILM W3, 10T 32AWG, W4, 10T 32AWG 2MIL POLY FILM P 36VIN 90 48VIN 72VIN 85 COILCRAFT DO1608-105 JP2 JP3 W2 BAS21 BAS21 5VOUT SHORT JP3, OPEN JP2 3.3VOUT, SHORT JP2, OPEN JP3 P EFFICIENCY 10k BAS21 0 1 2 8 9 10 1693 TA10 34567 OUTPUT CURRENT U 14 + C4 330µF 6.3V C5 330µF 6.3V 0.1µF T2 MMBD914LT1 W2 2.2µF 470Ω C3 330µF 6.3V + + BAT54 +VIN +VIN LTC1693 TYPICAL APPLICATIONS 5V to 12V Boost Converter INDUCTOR PEAK CURRENT ≈ 600mA R2, C1 SET THE OSCILLATION FREQUENCY AT 200kHz R1 SETS THE DUTY CYCLE AT 45% EFFICIENCY ≈ 80% AT 50mA LOAD *SUMIDA CDRH125-220 Output Voltage 18 VCC = 5V 50mA LOAD 16 OUTPUT VOLTAGE (V) 14 12 10 8 6 100 VCC = 5V 50mA LOAD 90 EFFICIENCY (%) 35 40 45 50 55 DUTY CYCLE (%) U D1 BAT85 R2 13k 1% R1 7.5k 1% VCC = 5V C2 0.1µF 8 1 C1 680pF + C3 4.7µF L1* D2 22µH 1N5819 Q1 BS170 LTC1693-3 3 4 7 VOUT 12V 50mA CL 47µF + 1693 TA06a Efficiency 80 70 60 60 65 50 10 11 12 13 14 OUTPUT VOLTAGE (V) 15 16 1693 TA06b 1693 TA06c 15 LTC1693 TYPICAL APPLICATIONS Charge Pump Doubler Output Voltage 12 VCC = 5V 10 80 EFFICIENCY (%) OUTPUT VOLTAGE (V) 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA07b 16 U R1 11k 1% C2 1µF 8 1 C1 680pF LTC1693-3 3 4 7 VCC = 5V VCC = 5V D1 1N5817 D2 1N5817 C3 1µF + VOUT CL 47µF 1693 TA07a R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz AND THE DUTY CYCLE AT 35% Efficiency 100 VCC = 5V 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA07c LTC1693 TYPICAL APPLICATIONS Charge Pump Inverter D1 1N5817 R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz AND THE DUTY CYCLE AT 35% Output Voltage 0 VCC = 5V –1 OUTPUT VOLTAGE (V) 100 VCC = 5V 80 EFFICIENCY (%) –2 –3 –4 –5 –6 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA08b 60 40 20 0 + U R1 11k 1% C2 1µF 8 1 C1 680pF LTC1693-3 3 4 7 CL 47µF VCC = 5V C3 1µF D2 1N5817 VOUT 1693 TA08a Efficiency 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA08c 17 LTC1693 TYPICAL APPLICATIONS Charge Pump Tripler C1 680pF R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz AND THE DUTY CYCLE AT 35% Output Voltage 18 16 14 90 VCC = 5V 80 70 OUTPUT VOLTAGE (V) EFFICIENCY (%) 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA09b 18 U 1 R1 11k 1% C2 1µF 8 LTC1693-3 3 4 7 VCC = 5V VCC = 5V D1 1N5817 D2 1N5817 C3 1µF D3 1N5817 D4 1N5817 C5 1µF + C4 3.3µF + VOUT CL 47µF 1693 TA09a Efficiency VCC = 5V 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693 TA09c LTC1693 PACKAGE DESCRIPTION 0.007 (0.18) 0.021 ± 0.006 (0.53 ± 0.015) * DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE ** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE 0.010 – 0.020 × 45° (0.254 – 0.508) 0.008 – 0.010 (0.203 – 0.254) 0°– 8° TYP 0.016 – 0.050 0.406 – 1.270 *DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE **DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. U Dimensions in inches (millimeters) unless otherwise noted. MS8 Package 8-Lead Plastic MSOP (LTC DWG # 05-08-1660) 0.118 ± 0.004* (3.00 ± 0.102) 8 76 5 0.192 ± 0.004 (4.88 ± 0.10) 0.118 ± 0.004** (3.00 ± 0.102) 1 0.040 ± 0.006 (1.02 ± 0.15) 0° – 6° TYP SEATING PLANE 0.012 (0.30) 0.0256 REF (0.65) TYP 23 4 0.034 ± 0.004 (0.86 ± 0.102) 0.006 ± 0.004 (0.15 ± 0.102) MSOP (MS8) 1197 S8 Package 8-Lead Plastic Small Outline (Narrow 0.150) (LTC DWG # 05-08-1610) 0.189 – 0.197* (4.801 – 5.004) 8 7 6 5 0.228 – 0.244 (5.791 – 6.197) 0.150 – 0.157** (3.810 – 3.988) 1 0.053 – 0.069 (1.346 – 1.752) 2 3 4 0.004 – 0.010 (0.101 – 0.254) 0.014 – 0.019 (0.355 – 0.483) 0.050 (1.270) TYP SO8 0996 19 LTC1693 TYPICAL APPLICATION Push-Pull Converter VCC = 5V T1A 24T #32 C6 330µF 6.3V T1B 1 24T #32 2 T1C 3 24T #32 4 T1D 24T #32 1• 2 R3 10Ω C7 2.2nF 100V R1 6.2k VCC = 5V C2 0.1µF 14 13 C1 390pF 74HC14 7 12 11 12 C3 0.1µF VCC = 5V C4 1µF 1 10 14 PRESET 13 2 9 8 3 6 LTC1693-2 4 5 Q2 Si4410 Q Q GND 7 74HC74 D Output Voltage 14 12 100 VCC = 5V 90 80 EFFICIENCY (%) OUTPUT VOLTAGE (V) 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 OUTPUT CURRENT (A) 1693 F05b RELATED PARTS PART NUMBER LTC1154 LTC1155 LTC1156 LTC1157 LT®1160/LT1162 LT1161 LTC1163 LT1339 LTC1435 DESCRIPTION High Side Micropower MOSFET Drivers Dual Micropower High/Low Side Drivers with Internal Charge Pump Dual Micropower High/Low Side Drivers with Internal Charge Pump 3.3V Dual Micropower High/Low Side Driver Half/Full Bridge N-Channel Power MOSFET Driver Quad Protected High Side MOSFET Driver Triple 1.8V to 6V High Side MOSFET Driver High Power Synchronous DC/DC Controller High Efficiency, Low Noise Current Mode Step-Down DC/DC Controller COMMENTS Internal Charge Pump, 4.5V to 48V Supply Range, tON = 80µs, tOFF = 28µs 4.5V to 18V Supply Range 4.5V to 18V Supply Range 3.3V or 5V Supply Range Dual Driver with Topside Floating Driver, 10V to 15V Supply Range 8V to 48V Supply Range, tON = 200µs, tOFF = 28µs 1.8V to 6V Supply Range, tON = 95µs, tOFF = 45µs Current Mode Operation Up to 60V, Dual N-Channel Synchronous Drive 3.5V to 36V Operation with Ultrahigh Efficiency, Dual N-Channel MOSFET Synchronous Drive 1693f LT/TP 0499 4K • PRINTED IN USA 20 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900 q FAX: (408) 434-0507 q www.linear-tech.com U + • • 9 T1E 24T 8 #28 D1 MBR340 L1 1µH 8 LTC1693-2 7 Q1 Si4410 R2 10Ω C5 2.2nF 100V ×2 • • 9 T1F 24T 8 #28 D2 MBR340 + C9 270µF 25V ×3 VOUT 12V 1A 3• 4 R4 10Ω CLR C8 2.2nF 100V T1: PHILIPS CPHS-EFD20-1S-10P FIRST WIND T1A AND T1C BIFILAR, THEN WIND T1E AND T1F BIFILAR, THEN WIND T1B AND T1D BIFILAR 1693 F05a Efficiency VCC = 5V 70 60 50 40 30 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 OUTPUT CURRENT (A) 1693 F05c © LINEAR TECHNOLOGY CORPORATION 1999