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LTC1693-5CMS8

LTC1693-5CMS8

  • 厂商:

    LINER

  • 封装:

  • 描述:

    LTC1693-5CMS8 - High Speed Single P-Channel MOSFET Driver - Linear Technology

  • 数据手册
  • 价格&库存
LTC1693-5CMS8 数据手册
LTC1693-5 High Speed Single P-Channel MOSFET Driver FEATURES s s s s s s s s s DESCRIPTIO Single MOSFET Driver in MSOP Package 1.5A Peak Output Current 16ns Rise/Fall Times at VCC = 12V, CL = 1nF Wide VCC Range: 4.5V to 13.2V CMOS Compatible Input with Hysteresis Input Threshold Is Independent of VCC Driver Input Can Be Driven Above VCC Undervoltage Lockout Thermal Shutdown The LTC®1693-5 drives power P-channel MOSFETs at high speed. The 1.5A peak output current reduces switching losses in MOSFETs with high gate capacitance. The LTC1693-5 is a single driver with an output polarity select pin. The MOSFET driver offers VCC independent CMOS input thresholds with 1.2V of typical hysteresis. It can level-shift the input logic signal up or down to the railto-rail VCC drive for the external MOSFET. The LTC1693-5 contains an undervoltage lockout circuit and a thermal shutdown circuit that disables the external P-channel MOSFET gate drive if activated. The LTC1693-5 comes in an 8-lead MSOP package. , LTC and LT are registered trademarks of Linear Technology Corporation. APPLICATIO S s s s s s Power Supplies High Side Drivers Motor/Relay Control Line Drivers Battery Chargers TYPICAL APPLICATIO High Efficiency 1.5A Li-Ion Battery Charger VIN 5V TO 6V POSITION CAPACITOR CLOSE TO LTC1732 1µF 8 VCC SENSE LTC1732 3 10 4 CHRG ACPR TIMER GND SEL 5 0.1µF AVX 0603ZC104KAT1A USE LOW TEMPERATURE COEFFICIENT CAPACITOR 2 VCC SEL 1-CELL Li-Ion BATTERY DRV BAT PROG 7 1 6 18.2k 22µF CDRH6D38-220NC 1 LTC1693-5CMS8 4 MBRS130LT3 9 4.7Ω 8 MBRS130LT3 332Ω 332Ω 0.47µF 0.082Ω 0.25W 37 Si2305DS + – + CHARGE RATE ≈1.5A (DEPENDING ON VIN AND BATTERY VOLTAGE) U 22µF CERAMIC POSITION CAPACITOR CLOSE TO SENSE RESISTOR 100µF 1693-5 TA01 U U 1 LTC1693-5 ABSOLUTE MAXIMUM RATINGS (Note 1) PACKAGE/ORDER INFORMATION TOP VIEW IN NC PHASE GND 1 2 3 4 8 7 6 5 VCC OUT NC NC Supply Voltage (VCC) .............................................. 14V Inputs (IN, PHASE) ................................... – 0.3V to 14V Driver Output ................................. – 0.3V to VCC + 0.3V Junction Temperature .......................................... 150°C Operating Temperature Range ..................... 0°C to 70°C Storage Temperature Range ................. – 65°C to 150°C Lead Temperature (Soldering, 10 sec).................. 300°C ORDER PART NUMBER LTC1693-5CMS8 MS8 PART MARKING LTSG MS8 PACKAGE 8-LEAD PLASTIC MSOP TJMAX = 150°C, θJA = 200°C/ W Consult factory for parts specified with wider operating temperature ranges. The q denotes specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, unless otherwise noted. SYMBOL PARAMETER VCC ICC ICC(SW) Input VIH VIL IIN VPH IPH Output VOH VOL RONL RONH IPKL IPKH tRISE tFALL tPLH tPHL High Output Voltage Low Output Voltage Output Pull-Down Resistance Output Pull-Up Resistance Output Low Peak Current Output High Peak Current Output Rise Time Output Fall Time Output Low-High Propagation Delay Output High-Low Propagation Delay COUT = 1nF COUT = 4.7nF COUT = 1nF COUT = 4.7nF COUT = 1nF COUT = 4.7nF COUT = 1nF COUT = 4.7nF q q q q q q q q ELECTRICAL CHARACTERISTICS Supply Voltage Range Quiescent Current Switching Supply Current High Input Threshold Low Input Threshold Input Pin Bias Current PHASE Pin High Input Threshold PHASE Pin Pull-Up Current CONDITIONS PHASE = 12V, IN = 0V COUT = 4.7nF, fIN = 100kHz q q MIN 4.5 200 TYP 360 7.2 MAX 13.2 550 10 3.1 1.7 ± 10 6.5 45 UNITS V µA mA V V µA V µA V q q q q 2.2 1.1 4.5 10 11.92 2.6 1.4 ± 0.01 5.5 20 11.97 30 2.85 3.00 1.70 1.40 17.5 48.0 16.5 42.0 38.0 40.0 32 35 PHASE = 0V IOUT = – 10mA IOUT = 10mA q q q 75 Switching Timing (Note 2) 35 85 35 75 70 75 70 75 ns ns ns ns ns ns ns ns Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: All AC timing specificatons are guaranteed by design and are not production tested. 2 U W U U WW W mV Ω Ω A A LTC1693-5 TYPICAL PERFOR A CE CHARACTERISTICS IN Threshold Voltage vs VCC 2.75 TA = 25°C 3.00 INPUT THRESHOLD VOLTAGE (V) INPUT THRESHOLD VOLTAGE (V) 2.50 VIH 2.25 2.00 1.75 1.50 1.25 1.00 5 6 7 9 8 VCC (V) 10 11 12 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 – 50 –25 0 VIL VIH INPUT THRESHOLD HYSTERESIS (V) VIL PHASE Threshold Voltage vs VCC 6 PHASE THRESHOLD VOLTAGE (V) TA = 25°C 5 VPH(H) 4 VPH(L) 3 2 1 0 5 6 7 9 8 VCC (V) 10 11 12 TIME (ns) 18 tFALL 16 14 12 10 5 6 7 9 8 VCC (V) 10 11 12 TIME (ns) Rise/Fall Time vs COUT 120 TA = 25°C VCC = 12V 100 fIN = 100kHz 80 55 50 45 40 TIME (ns) TIME (ns) TIME (ns) 60 40 20 0 1 10 100 COUT (pF) 1000 10000 1693-5 G07 tRISE tFALL UW 1693-5 G01 IN Threshold Voltage vs Ambient Temperature VCC = 12V IN Threshold Hysteresis vs Ambient Temperature 1.4 1.3 1.2 VIH-VIL 1.1 1.0 0.9 0.8 – 50 VCC = 12V 50 75 100 25 AMBIENT TEMPERATURE (°C) 125 25 75 100 – 25 0 50 AMBIENT TEMPERATURE (°C) 125 1693-5 G02 1693-5 G03 Rise/Fall Time vs VCC 24 22 20 tRISE TA = 25°C COUT = 1nF fIN = 100kHz 20 19 18 17 16 15 14 13 12 11 Rise/Fall Time vs Ambient Temperature VCC = 12V COUT = 1nF fIN = 100kHz tRISE tFALL 10 50 25 0 75 100 –50 –25 AMBIENT TEMPERATURE (°C) 125 1693-5 G04 1693-5 G05 1693-5 G06 Propagation Delay vs VCC TA = 25°C COUT = 1nF fIN = 100kHz tPLH tPHL 40 50 45 Propagation Delay vs Ambient Temperature VCC = 12V COUT = 1nF fIN = 100kHz 35 30 25 20 tPLH 35 tPHL 30 25 15 10 5 6 7 8 9 VCC (V) 10 11 12 20 – 50 – 25 50 100 25 75 0 AMBIENT TEMPERATURE (°C) 125 1693-5 G08 1693-5 G09 3 LTC1693-5 TYPICAL PERFOR A CE CHARACTERISTICS Propagation Delay vs COUT 50 OUTPUT SATURATION VOLTAGE (mV) TA = 25°C VCC = 12V fIN = 100kHz 150 VOL (50mA) 100 40 TIME (ns) QUIESCENT CURRENT (µA) tPLH 30 tPHL 20 1 10 100 COUT (pF) 1000 10000 1693-5 G10 Switching Supply Current vs COUT 100 SWITCHING SUPPLY CURRENT (mA) 90 80 70 TA = 25°C VCC = 12V 50 40 30 20 10 0 1 10 100 COUT (pF) 1000 10000 1693-5 G13 VOL (mV) 60 750kHz VOH vs Output Current 350 300 250 TA = 25°C VCC = 12V POWER DISSIPATION (mW) VOH (mV) 200 150 100 50 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693-5 G15 4 UW 500kHz Output Saturation Voltage vs Temperature 200 350 Quiescent Current vs VCC TA = 25°C VIN = 0V VCC = 12V VOH (50mA) wrt VCC 300 250 200 50 VOH (10mA) wrt VCC VOL (10mA) 0 – 55 – 35 –15 150 100 5 25 45 65 85 105 125 TEMPERATURE (°C) 1693-5 G11 5 6 7 9 8 VCC (V) 10 11 12 1693-5 G12 VOL vs Output Current 300 250 200 VOL 150 100 50 0 0 10 20 30 40 50 60 70 80 90 100 OUTPUT CURRENT (mA) 1693-5 G14 TA = 25°C VCC = 12V 200kHz 100kHz 25kHz Thermal Derating Curve 1400 1200 1000 800 600 400 200 0 – 55 – 35 –15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (°C) 1693-5 G16 TJ = 125°C VOH LTC1693-5 PIN FUNCTIONS IN (Pin 1): Driver Input. The input has VCC independent thresholds with hysteresis to improve noise immunity. NC (Pins 2, 5, 6): No Connect. PHASE (Pin 3): Output Polarity Select. Connect this pin to VCC or leave it floating for noninverting operation. Ground this pin for inverting operation. The typical PHASE pin input current when pulled low is 20µA. GND (Pin 4): Driver Ground. Connect to a low impedance ground. The VCC bypass capacitor should connect directly to this pin. OUT (Pin 7): Driver Output. VCC (Pin 8): Power Supply Input. The source of the external P-MOSFET should also connect directly to this pin. This minimizes the AC current path and improves signal integrity. TI I G DIAGRA W U U UW U INPUT RISE/FALL TIME < 10ns INPUT VIH VIL NONINVERTING OUTPUT OPERATION tr tPLH INVERTING OUTPUT OPERATION 90% 10% tf tPHL tf tPHL 90% 10% tr tPLH 1693-5 TD 5 LTC1693-5 APPLICATIONS INFORMATION Overview The LTC1693-5 single driver allows 3V- or 5V-based digital circuits to drive power P-channel MOSFETs at high speeds. A power MOSFET’s gate-charge loss increases with switching frequency and transition time. The LTC1693-5 is capable of driving a 1nF load with 16ns rise and fall times using a VCC of 12V. This eliminates the need for higher voltage supplies, such as 18V, to reduce the gate charge losses. The LTC1693-5’s 360µA quiescent current is an order of magnitude lower than most other drivers/buffers. This improves system efficiency in both standby and switching operation. Since a power MOSFET generally accounts for the majority of power loss in a converter, addition of the LT1693-5 to a high power converter design greatly improves efficiency, using very little board space. Input Stage The LTC1693-5 employs 3V CMOS compatible input thresholds that allow a low voltage digital signal to drive standard power P-channel MOSFETs. The LTC1693-5 incorporates a 4V internal regulator to bias the input buffer. This allows the 3V CMOS compatible input thresholds (VIH = 2.6V, VIL = 1.4V) to be independent of variations in VCC. The 1.2V hysteresis between VIH and VIL eliminates false triggering due to ground noise during switching transitions. The LTC1693-5’s input buffer has a high input impedance and draws less than 10µA during standby. Output Stage The LTC1693-5’s output stage is essentially a CMOS inverter, as shown by the P- and N-channel MOSFETs in Figure 1 (P1 and N1). The CMOS inverter swings rail-torail, giving maximum voltage drive to the load. This large voltage swing is important in driving external power P-channel MOSFETs, whose RDS(ON) is inversely proportional to its gate overdrive voltage (VGS – VT). The LTC1693-5’s peak output currents are 1.4A (P1) and 1.7A (N1) respectively. The N-channel MOSFET (N1) has higher current drive capability so it can charge the power MOSFET’s gate capacitance during high-to-low signal transitions. When the power MOSFET’s gate is pulled high by the LTC1693-5, its drain voltage is pulled low by its load (e.g., a resistor or inductor). The slew rate of the drain voltage causes current to flow back to the MOSFETs gate through its gate-to-drain capacitance. If the MOSFET driver does not have sufficient source current capability (low output impedance), the current through the power MOSFET’s Miller capacitance (CGD) can momentarily pull the gate low, turning the MOSFET back on. Rise/Fall Time Since the power MOSFET generally accounts for the majority of power lost in a converter, it’s important to quickly turn it either fully “on” or “off” thereby minimizing the transition time in its linear region. The LTC1693-5 has rise and fall times on the order of 16ns, delivering about 1.4A to 1.7A of peak current to a 1nF load with a VCC of only 12V. The LTC1693-5 rise and fall times are determined by the peak current capabilities of P1 and N1. The predriver, shown in Figure 1 driving P1 and N1, uses an adaptive method to minimize cross-conduction currents. This is done with a 6ns nonoverlapping transition time. N1 is fully turned off before P1 is turned-on and vice-versa using this 6ns buffer time. This minimizes any cross-conduction currents while N1 and P1 are switching on and off yet is short enough to not prolong their rise and fall times. VCC 6 U W U U LTC1693-5 P1 CGS OUT POWER MOSFET N1 GND LOAD 1693-5 F01 CGD Figure 1. Capacitance Seen by OUT During Switching LTC1693-5 APPLICATIONS INFORMATION UVLO and Thermal Shutdown The LTC1693-5’s UVLO detector disables the input buffer and pulls the output pin to VCC if VCC < 4V. The output remains off from VCC = 1V to VCC = 4V. This ensures that during start-up or improper supply voltage values, the LTC1693-5 will keep the output power P-channel MOSFET off. The LTC1693-5 also has a thermal detector that similarly disables the input buffer and pulls the output pin to VCC if junction temperature exceeds 145°C. The thermal shutdown circuit has 20°C of hysteresis. This thermal limit helps to shut down the system should a fault condition occur. Input Voltage Range LTC1693-5’s input pin is a high impedance node and essentially draws neligible input current. This simplifies the input drive circuitry required for the input. The LTC1693-5 typically has 1.2V of hysteresis between its low and high input thresholds. This increases the driver’s robustness against any ground bounce noises. However, care should still be taken to keep this pin from any noise pickup, especially in high frequency switching applications. In applications where the input signal swings below the GND pin potential, the input pin voltage must be clamped to prevent the LTC1693-5’s parastic substrate diode from turning on. This can be accomplished by connecting a series current limiting resistor R1 and a shunting Schottky diode D1 to the input pin (Figure 2). R1 ranges from 100Ω to 470Ω while D1 can be a BAT54 or 1N5818/9. Bypassing and Grounding LTC1693-5 requires proper VCC bypassing and grounding due to its high speed switching (ns) and large AC currents (A). Careless component placement and PCB trace routing may cause excessive ringing and under/overshoot. To obtain the optimum performance from the LTC1693-5: A. Mount the bypass capacitors as close as possible to the VCC and GND pins. The leads should be shortened as much as possible to reduce lead inductance. It is recommended to have a 0.1µF ceramic in parallel with a low ESR 4.7µF bypass capacitor. For high voltage switching in an inductive environment, ensure that the bypass capacitors’ VMAX ratings are high enough to prevent breakdown. This is especially important for floating driver applications. B. Use a low inductance, low impedance ground plane to reduce any ground drop and stray capacitance. Remember that the LTC1693-5 switches 1.5A peak currents and any significant ground drop will degrade signal integrity. C. Plan the ground routing carefully. Know where the large load switching current is coming from and going to. Maintain separate ground return paths for the input pin and output pin. Terminate these two ground traces only at the GND pin of the driver (STAR network). D. Keep the copper trace between the driver output pin and the load short and wide. INPUT SIGNAL GOING BEL0W GND PIN POTENTIAL R1 D1 Figure 2. Input Protection Against Negative Input Signals Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. U W U U VCC LTC1693-5 IN PARASITIC SUBSTRATE DIODE GND 1693-5 F02 7 LTC1693-5 PACKAGE DESCRIPTION 0.007 (0.18) 0.021 ± 0.006 (0.53 ± 0.015) * DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE ** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE RELATED PARTS PART NUMBER LTC1154 LTC1155/LTC1156 LTC1157 LT 1160/LT1162 LT1161 LTC1163 LT1339 LTC1735 LTC1693-1/LTC1693-2/ LTC1693-3 LTC1981/LTC1982 ® DESCRIPTION High Side Micropower MOSFET Drivers Dual Micropower High/Low Side Drivers with Internal Charge Pump 3.3V Dual Micropower High/Low Side Driver Half/Full Bridge N-Channel Power MOSFET Driver Quad Protected High Side MOSFET Driver Triple 1.8V to 6V High Side MOSFET Driver High Power Synchronous DC/DC Controller High Efficiency, Low Noise Current Mode Step-Down DC/DC Controller Single/Dual N-Channel MOSFET Drivers SOT-23 High Side Drivers 8 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900 q FAX: (408) 434-0507 q www.linear-tech.com U Dimensions in inches (millimeters) unless otherwise noted. MS8 Package 8-Lead Plastic MSOP (LTC DWG # 05-08-1660) 0.118 ± 0.004* (3.00 ± 0.102) 8 76 5 0.193 ± 0.006 (4.90 ± 0.15) 0.118 ± 0.004** (3.00 ± 0.102) 1 0.043 (1.10) MAX 0° – 6° TYP SEATING PLANE 23 4 0.034 (0.86) REF 0.009 – 0.015 (0.22 – 0.38) 0.0256 (0.65) BSC 0.005 ± 0.002 (0.13 ± 0.05) MSOP (MS8) 1100 COMMENTS Internal Charge Pump, 4.5V to 48V Supply Range, tON = 80µs, tOFF = 28µs 4.5V to 18V Supply Range 3.3V or 5V Supply Range Dual Driver with Topside Floating Driver, 10V to 15V Supply Range 8V to 48V Supply Range, tON = 200µs, tOFF = 28µs 1.8V to 6V Supply Range, tON = 95µs, tOFF = 45µs Current Mode Operation Up to 60V, Dual N-Channel Synchronous Drive 3.5V to 36V Operation with Ultrahigh Efficiency, Dual N-Channel MOSFET Synchronous Drive 1.5A Peak Output Current, Dual Drivers Permit High/Low Side Drive Integrated Voltage Triplers, 10µA Quiescent per Driver 16935f LT/TP 0101 4K • PRINTED IN USA © LINEAR TECHNOLOGY CORPORATION 2001
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