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LTC3859IFE-TRPBF

LTC3859IFE-TRPBF

  • 厂商:

    LINER

  • 封装:

  • 描述:

    LTC3859IFE-TRPBF - Low IQ, Triple Output, Buck/Buck/Boost Synchronous Controller - Linear Technology

  • 数据手册
  • 价格&库存
LTC3859IFE-TRPBF 数据手册
FEATURES n n n n n n n n n n n n n n n LTC3859 Low IQ, Triple Output, Buck/Buck/Boost Synchronous Controller DESCRIPTION The LTC®3859 is a high performance triple output (buck/ buck/boost) synchronous DC/DC switching regulator controller that drives all N-channel power MOSFET stages. Constant frequency current mode architecture allows a phase-lockable switching frequency of up to 850kHz. The LTC3859 operates from a wide 4.5V to 38V input supply range. When biased from the output of the boost converter or another auxiliary supply, the LTC3859 can operate from an input supply as low as 2.5V after start-up. The 55μA no-load quiescent current extends operating runtime in battery powered systems. OPTI-LOOP compensation allows the transient response to be optimized over a wide range of output capacitance and ESR values. The LTC3859 features a precision 0.8V reference for the bucks, 1.2V reference for the boost and a power good output indicator. Independent TRACK/SS pins for each controller ramp the output voltages during start-up. Current foldback limits MOSFET heat dissipation during short-circuit conditions. The PLLIN/MODE pin selects among Burst Mode operation, pulse-skipping mode, or continuous inductor current mode at light loads. Dual Buck Plus Single Boost Synchronous Controllers Outputs Remain in Regulation Through Cold Crank Down to 2.5V Low Operating IQ: 55μA (One Channel On) Wide Bias Input Voltage Range: 4.5V to 38V Buck Output Voltage Range: 0.8V ≤ VOUT ≤ 24V Boost Output Voltage Up to 60V RSENSE or DCR Current Sensing 100% Duty Cycle for Boost Synchronous MOSFET Phase-Lockable Frequency (75kHz to 850kHz) Programmable Fixed Frequency (50kHz to 900kHz) Selectable Continuous, Pulse-Skipping or Low Ripple Burst Mode® Operation at Light Loads Very Low Buck Dropout Operation: 99% Duty Cycle Adjustable Output Voltage Soft-Start or Tracking Low Shutdown IQ: 14μA Small 38-Pin 5mm × 7mm QFN and TSSOP Packages Automotive Always-On and Start-Stop Systems Battery Operated Digital Devices Distributed DC Power Systems APPLICATIONS n n n L, LT, LTC, LTM, Burst Mode, OPTI-LOOP and μModule are registered trademarks and No RSENSE is a trademark of Linear Technology Corporation. All other trademarks are the property of their respective owners. Protected by U.S. Patents including 5481178, 5705919, 5929620, 6144194, 6177787, 6580258. TYPICAL APPLICATION VOUT3 REGULATED AT 10V WHEN VIN < 10V FOLLOWS VIN WHEN VIN > 10V 220μF 499k VFB3 68.1k 4.9μH VIN 2.5V TO 38V (START-UP ABOVE 5V) 2mΩ 220μF BG3 SENSE3– SENSE3+ INTVCC 4.7μF BOOST1, 2, 3 SW1, 2, 3 0.1μF ITH1, 2, 3 TG2 SW2 BG2 6.5μH 8mΩ VOUT2 8.5V 3A SENSE1+ SENSE1– VFB1 68.1k RUN1, 2, 3 EXTVCC 357k 220μF 1.2μH TG3 SW3 SW1 BG1 6mΩ VOUT1 5V 5A EFFICIENCY (%) 1μF VBIAS TG1 100 95 90 85 80 75 70 65 60 55 FIGURE 12 CIRCUIT ILOAD = 2A 50 10 15 20 25 30 5 0 INPUT VOLTAGE (V) VOUT1 = 5V VOUT2 = 8.5V Efficiency vs Input Voltage LTC3859 35 40 3859 TA01b 0.1μF SENSE2+ SENSE2– TRACK/SS1, 2 VFB2 SS3 PGND SGND 3859 TA01 68.1k 649k 68μF 3859f 1 LTC3859 ABSOLUTE MAXIMUM RATINGS (Note 1) Bias Input Supply Voltage (VBIAS) .............. –0.3V to 40V Buck Top Side Driver Voltages (BOOST1, BOOST2) ............................. –0.3V to 46V Boost Top Side Driver Voltages (BOOST3) ............................................ –0.3V to 76V Buck Switch Voltage (SW1, SW2) ................ –5V to 40V Boost Switch Voltage (SW3) ........................ –5V to 70V INTVCC, (BOOST1–SW1), (BOOST2–SW2), (BOOST3–SW3),.......... –0.3V to 6V RUN1, RUN2, RUN3 .................................... –0.3V to 8V Maximum Current Sourced Into Pin from Source >8V...............................................100μA SENSE1+, SENSE2 +, SENSE1– SENSE2 – Voltages ..................................... –0.3V to 28V SENSE3 +, SENSE3– Voltages ..................... –0.3V to 40V PLLIN/MODE, FREQ Voltages ............... –0.3V to INTVCC EXTVCC ....................................................... –0.3V to 14V ITH1, ITH2, ITH3, VFB1, VFB2, VFB3 Voltages .... –0.3V to 6V PGOOD1, OV3 Voltages .............................. –0.3V to 6V TRACK/SS1, TRACK/SS2, SS3 Voltages ..... –0.3V to 6V Operating Junction Temperature Range (Notes 2, 3)........................................ –40°C to 125°C Maximum Junction Temperature........................... 125°C Storage Temperature Range................... –65°C to 150°C PIN CONFIGURATION TOP VIEW TOP VIEW TRACK/SS1 SENSE1– SENSE1+ ITH1 VFB1 SENSE1+ SENSE1– FREQ PLLIN/MODE SS3 SENSE3+ SENSE3– 1 2 3 4 5 6 7 8 9 39 PGND 38 TRACK/SS1 37 PGOOD1 36 TG1 35 SW1 34 BOOST1 33 BG1 32 SW3 31 TG3 30 BOOST3 29 BG3 28 VBIAS 27 EXTVCC 26 INTVCC 25 BG2 24 BOOST2 23 SW2 22 TG2 21 OV3 20 TRACK/SS2 FREQ 1 PLLIN/MODE 2 SS3 3 SENSE3+ 4 SENSE3– 5 VFB3 6 ITH3 7 SGND 8 RUN1 9 RUN2 10 RUN3 11 SENSE2– 12 13 14 15 16 17 18 19 ITH2 TRACK/SS2 OV3 TG2 SENSE2+ SW2 VFB2 39 PGND VFB1 ITH1 PGOOD1 38 37 36 35 34 33 32 31 SW1 30 BOOST1 29 BG1 28 SW3 27 TG3 26 BOOST3 25 BG3 24 VBIAS 23 EXTVCC 22 INTVCC 21 BG2 20 BOOST2 VFB3 10 ITH3 11 SGND 12 RUN1 13 RUN2 14 RUN3 15 SENSE2– 16 SENSE2+ 17 VFB2 18 ITH2 19 FE PACKAGE 38-LEAD PLASTIC TSSOP TJMAX = 125°C, θJA = 25°C/W EXPOSED PAD (PIN 39) IS PGND, MUST BE SOLDERED TO PCB UHF PACKAGE 38-LEAD (5mm 7mm) PLASTIC QFN TJMAX = 125°C, θJA = 34°C/W EXPOSED PAD (PIN 39) IS PGND, MUST BE SOLDERED TO PCB TG1 3859f 2 LTC3859 ORDER INFORMATION LEAD FREE FINISH LTC3859EFE#PBF LTC3859IFE#PBF LTC3859EUHF#PBF LTC3859IUHF#PBF TAPE AND REEL LTC3859EFE#TRPBF LTC3859IFE#TRPBF LTC3859EUHF#TRPBF LTC3859IUHF#TRPBF PART MARKING* LTC3859FE LTC3859FE 3859 3859 PACKAGE DESCRIPTION 38-Lead Plastic TSSOP 38-Lead Plastic TSSOP 38-Lead (5mm × 7mm) Plastic QFN 38-Lead (5mm × 7mm) Plastic QFN TEMPERATURE RANGE –40°C to 125°C –40°C to 125°C –40°C to 125°C –40°C to 125°C Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container. For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/ ELECTRICAL CHARACTERISTICS SYMBOL VBIAS VFB1,2 PARAMETER Bias Input Supply Operating Voltage Range Buck Regulated Feedback Voltage The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TJ ≈ TA = 25°C. VBIAS = 12V, VRUN1,2,3 = 5V, EXTVCC = 0V unless otherwise noted. CONDITIONS MIN 4.5 (Note 4); ITH1,2 Voltage = 1.2V –40°C to 125°C –40°C to 85°C (Note 4); ITH3 Voltage = 1.2V –40°C to 125°C –40°C to 85°C (Note 4) (Note 4); VIN = 4V to 38V (Note 4) Measured in Servo Loop; ΔITH Voltage = 1.2V to 0.7V Measured in Servo Loop; ΔITH Voltage = 1.2V to 2V (Note 4); ITH1,2,3 = 1.2V; Sink/Source 5μA (Note 5) RUN1 = 5V and RUN2,3 = 0V or RUN2 = 5V and RUN1,3 = 0V or RUN3 = 5V and RUN1,2 = 0V VFB1, 2 ON = 0.83V (No Load) VFB3 = 1.25V RUN1,2,3 = 5V, VFB1,2 = 0.83V (No Load) VFB3 = 1.25V RUN1 = 5V and RUN2,3 = 0V or RUN2 = 5V and RUN1,3 = 0V VFB,ON = 0.83V (No Load) RUN3 = 5V and RUN1,2 = 0V VFB3 = 1.25V RUN1 = 5V and RUN2 = 0V or RUN2 = 5V and RUN1 = 0V RUN3 = 5V VFB1,2 = 0.83V (No Load) VFB3 = 1.25V RUN1,2,3 = 5V, VFB1,2 = 0.83V (No Load) VFB3 = 1.25V RUN1,2,3 = 0V l l l TYP MAX 38 UNITS V 0.788 0.792 1.182 1.188 0.800 0.800 1.200 1.200 ±5 0.002 0.01 –0.01 2 0.812 0.808 1.218 1.212 ±50 0.02 0.1 –0.1 V V V V nA %/V % % mmho VFB3 Boost Regulated Feedback Voltage l IFB1,2,3 VREFLNREG VLOADREG Feedback Current Reference Voltage Line Regulation Output Voltage Load Regulation gm1,2,3 IQ Transconductance Amplifier gm Input DC Supply Current Pulse-Skipping or Forced Continuous Mode (One Channel On) 2 mA Pulse-Skipping or Forced Continuous Mode (All Channels On) Sleep Mode (One Channel On, Buck) Sleep Mode (One Channel On, Boost) Sleep Mode (Buck and Boost Channel On) 3 mA 55 80 μA 55 65 80 100 μA μA Sleep Mode (All Three Channels On) Shutdown 80 120 μA 14 30 μA 3859f 3 LTC3859 ELECTRICAL CHARACTERISTICS SYMBOL UVLO VOVL1,2 ISENSE1,2+ ISENSE3+ ISENSE1,2– PARAMETER Undervoltage Lockout Buck Feedback Overvoltage Protection SENSE+ Pin Current SENSE+ Pin Current SENSE– Pin Current SENSE– Pin Current Maximum Duty Factor for TG Maximum Duty Factor for BG Soft-Start Charge Current Soft-Start Charge Current RUN1 Pin Threshold RUN2,3 Pin Threshold RUN Pin Hysteresis The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TJ ≈ TA = 25°C. VBIAS = 12V, VRUN1,2,3 = 5V, EXTVCC = 0V unless otherwise noted. CONDITIONS INTVCC Ramping Up INTVCC Ramping Down Measured at VFB1,2 Relative to Regulated VFB1,2 Bucks (Channels 1 and 2) Boost (Channel 3) Bucks (Channels 1 and 2) VOUT1,2 < VINTVCC – 0.5V VOUT1,2 > VINTVCC + 0.5V Boost (Channel 3) VSENSE3+, VSENSE3 – = 12V Bucks (Channels 1,2) in Dropout, FREQ = 0V Boost (Channel 3) in Overvoltage Bucks (Channels 1,2) in Overvoltage Boost (Channel 3) VTRACK/SS1,2 = 0V VSS3 = 0V VRUN1 Rising VRUN2,3 Rising VFB1,2 = 0.7V, VSENSE1,2– = 3.3V VFB1,2,3 = 1.1V, VSENSE3 + = 12V l l l l l MIN 3.5 7 TYP 4.15 3.8 10 MAX 4.5 4.0 13 ±1 UNITS V V % μA μA 170 ±2 700 ±1 98 99 100 100 96 1.0 1.0 1.25 1.28 80 50 ISENSE3 – DFMAX,TG DFMAX,BG ITRACK/SS1,2 ISS3 VRUN1 ON VRUN2,3 ON VRUN1,2,3 Hyst μA μA μA % % % % μA μA V V mV mV V 0.7 0.7 1.19 1.23 43 2.5 1.4 1.4 1.31 1.33 57 38 VSENSE1,2,3(MAX) Maximum Current Sense Threshold VSENSE3(CM) Gate Driver TG1,2 BG1,2 TG3 BG3 Pull-Up On-Resistance Pull-Down On-Resistance Pull-Up On-Resistance Pull-Down On-Resistance Pull-Up On-Resistance Pull-Down On-Resistance Pull-Up On-Resistance Pull-Down On-Resistance TG Transition Time: Rise Time Fall Time BG Transition Time: Rise Time Fall Time Top Gate Off to Bottom Gate On Delay Synchronous Switch-On Delay Time Bottom Gate Off to Top Gate On Delay Top Switch-On Delay Time Buck Minimum On-Time Boost Minimum On-Time Internal VCC Voltage INTVCC Load Regulation SENSE3 Pins Common Mode Range (BOOST Converter Input Supply Voltage) 2.5 1.5 2.4 1.1 1.2 1.0 1.2 1.0 (Note 6) CLOAD = 3300pF CLOAD = 3300pF (Note 6) CLOAD = 3300pF CLOAD = 3300pF CLOAD = 3300pF Each Driver Bucks (Channels 1, 2) Boost (Channel 3) CLOAD = 3300pF Each Driver Bucks (Channels 1, 2) Boost (Channel 3) (Note 7) (Note 7) 6V < VBIAS < 38V, VEXTVCC = 0V, IINTVCC = 0mA ICC = 0mA to 50mA, VEXTVCC = 0V 5.0 25 16 28 13 30 70 30 70 95 120 5.4 0.7 5.6 2 Ω Ω Ω Ω Ω Ω Ω Ω ns ns ns ns ns ns ns ns ns ns V % TG1,2,3 tr TG1,2,3 tf BG1,2,3 tr BG1,2,3 tf TG/BG t1D BG/TG t1D tON(MIN)1,2 tON(MIN)3 VINTVCCVBIAS VLDOVBIAS INTVCC Linear Regulator 3859f 4 LTC3859 ELECTRICAL CHARACTERISTICS SYMBOL VINTVCCEXT VLDOEXT VEXTVCC VLDOHYS f25k f65k f105k fLOW fHIGH fSYNC PGOOD1 Output VPGL1 IPGOOD1 VPG1 PGOOD1 Voltage Low PGOOD1 Leakage Current PGOOD1 Trip Level IPGOOD1 = 2mA VPGOOD1 = 5V VFB1 with Respect to Set Regulated Voltage VFB1 Ramping Negative Hysteresis VFB1 Ramping Positive Hysteresis –13 7 –10 2.5 10 2.5 20 0.2 6 10 1.5 65 0.2 0.4 ±1 –7 13 V μA % % % % μs V μA % % μA PARAMETER Internal VCC Voltage INTVCC Load Regulation EXTVCC Switchover Voltage EXTVCC Hysteresis Programmable Frequency Programmable Frequency Programmable Frequency Low Fixed Frequency High Fixed Frequency Synchronizable Frequency RFREQ = 25k; PLLIN/MODE = DC Voltage RFREQ = 65k; PLLIN/MODE = DC Voltage RFREQ = 105k; PLLIN/MODE = DC Voltage VFREQ = 0V PLLIN/MODE = DC Voltage VFREQ = INTVCC; PLLIN/MODE = DC Voltage PLLIN/MODE = External Clock l The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TJ ≈ TA = 25°C. VBIAS = 12V, VRUN1,2,3 = 5V, EXTVCC = 0V unless otherwise noted. CONDITIONS 6V < VEXTVCC < 13V, IINTVCC = 0mA ICC = 0mA to 50mA, VEXTVCC = 8.5V EXTVCC Ramping Positive 4.5 MIN 5.0 TYP 5.4 0.7 4.7 200 115 375 320 485 75 440 835 350 535 380 585 850 505 MAX 5.6 2 UNITS V % V mV kHz kHz kHz kHz kHz kHz Oscillator and Phase-Locked Loop TPG1 VOV3L IOV3 VOV Delay For Reporting a Fault OV3 Voltage Low OV3 Leakage Current OV3 Trip Level IOV3 = 2mA VOV3 = 5V VFB With Respect to Set Regulated Voltage Hysteresis VBOOST3 = 16V; VSW3 = 12V; Forced Continuous Mode OV3 Boost Overvoltage Indicator Output 0.4 ±1 13 BOOST3 Charge Pump IBST3 BOOST3 Charge Pump Available Output Current Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC3859 is tested under pulsed conditions such that TJ ≈ TA. The LTC3859E is guaranteed to meet performance specifications from 0°C to 125°C. Specifications over the –40°C to 125°C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LTC3859I is guaranteed over the full –40°C to 125°C operating junction temperature range. Note 3: TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: TJ = TA + (PD • θJA) where θJA = 34°C/W for the QFN package and θJA = 25°C/W for the TSSOP package. Note 4: The LTC3859 is tested in a feedback loop that servos VITH1,2,3 to a specified voltage and measures the resultant VFB1,2,3. The specification at 85°C is not tested in production. This specification is assured by design, characterization and correlation to production testing at 125°C. Note 5: Dynamic supply current is higher due to the gate charge being delivered at the switching frequency. See Applications information. Note 6: Rise and fall times are measured using 10% and 90% levels. Delay times are measured using 50% levels. Note 7: See Minimum On-Time Considerations in the Applications Information section. 3859f 5 LTC3859 TYPICAL PERFORMANCE CHARACTERISTICS Efficiency and Power Loss vs Output Current (Buck) 100 90 80 EFFICIENCY (%) 70 60 50 CCM EFFICIENCY 10 PULSE-SKIPPING 30 EFFICIENCY BURST LOSS 20 BURST EFFICIENCY 1 CCM LOSS 10 PULSE-SKIPPING LOSS 0.1 0 0.01 1 10 0.0001 0.001 0.1 OUTPUT CURRENT (A) 3859 G01 FIGURE 12 CIRCUIT VIN = 10V, VOUT = 5V 40 100 1000 POWER LOSS (mW) EFFICIENCY (%) 10000 100 90 80 70 60 50 40 30 20 10 0 0.0001 FIGURE 12 CIRCUIT 0.01 1 0.001 0.1 OUTPUT CURRENT (A) 10 3859 G02 Efficiency vs Output Current (Buck) 100 VIN = 10V VIN = 20V EFFICIENCY (%) Efficiency vs Input Voltage (Buck) FIGURE 12 CIRCUIT 99 VOUT = 5V ILOAD = 4A 98 97 96 95 94 93 92 0 5 10 15 20 25 30 INPUT VOLTAGE (V) 35 40 3859 G03 Load Step (Buck) Burst Mode Operation VOUT 100mV/DIV AC-COUPLED VOUT 100mV/DIV AC-COUPLED Load Step (Buck) Pulse-Skipping Mode VOUT 100mV/DIV AC-COUPLED Load Step (Buck) Forced Continuous Mode IL 2A//DIV 50μs/DIV VIN = 12V VOUT = 5V FIGURE 12 CIRCUIT 3859 G04 IL 2A//DIV 50μs/DIV VIN = 12V VOUT = 5V FIGURE 12 CIRCUIT 3859 G05 IL 2A//DIV 50μs/DIV VIN = 12V VOUT = 5V FIGURE 12 CIRCUIT 3859 G06 Inductor Current at Light Load (Buck) FORCED CONTINUOUS MODE Burst Mode OPERATION 1A/DIV PULSESKIPPING MODE 2μs/DIV VIN = 10V VOUT = 5V ILOAD = 1mA FIGURE 12 CIRCUIT 3859 G07 Soft Start-Up 808 REGULATED FEEDBACK VOLTAGE (mV) 806 804 802 800 798 796 794 Buck Regulated Feedback Voltage vs Temperature VOUT2 2V/DIV VOUT1 2V/DIV 2ms/DIV FIGURE 12 CIRCUIT 3859 G08 792 –45 –20 30 55 80 5 TEMPERATURE (°C) 105 130 3859 G09 3859f 6 LTC3859 TYPICAL PERFORMANCE CHARACTERISTICS Efficiency and Power Loss vs Output Current (Boost) 100 90 80 EFFICIENCY (%) 70 60 50 100 1000 POWER LOSS (mW) EFFICIENCY (%) 10000 100 90 80 EFFICIENCY (%) 10 3859 G11 Efficiency vs Output Current (Boost) VIN = 8V VIN = 5V 100 Efficiency vs Input Voltage (Boost) FIGURE 12 CIRCUIT 99 VBIAS = VIN V = 10V 98 OUT ILOAD = 2A 97 96 95 94 93 92 91 90 2 3 4 6 7 8 5 INPUT VOLTAGE (V) 9 10 70 60 50 40 30 20 FIGURE 12 CIRCUIT 10 VBIAS = VIN VOUT = 10V 0 0.01 1 0.0001 0.001 0.1 OUTPUT CURRENT (A) CCM EFFICIENCY 40 PULSE-SKIPPING 10 EFFICIENCY 30 BURST LOSS BURST 1 20 EFFICIENCY CCM LOSS 10 PULSE-SKIPPING LOSS 0 0.1 0.01 1 10 0.0001 0.001 0.1 OUTPUT CURRENT (A) 3859 G10 FIGURE 12 CIRCUIT VIN = 5V, VOUT = 10V, VBIAS = VIN 3859 G12 Load Step (Boost) Burst Mode Operation VOUT 100mV/ DIV ACCOUPLED VOUT 100mV/DIV AC-COUPLED Load Step (Boost) Pulse-Skipping Mode VOUT 100mV/DIV AC-COUPLED Load Step (Boost) Forced Continuous Mode IL 5A/DIV IL 5A/DIV IL 5A/DIV 200μs/DIV VOUT = 10V VIN = 5V FIGURE 12 CIRCUIT 3859 G13 200μs/DIV VOUT = 10V VIN = 5V FIGURE 12 CIRCUIT 3859 G14 200μs/DIV VOUT = 10V VIN = 5V FIGURE 12 CIRCUIT 3859 G15 Inductor Current at Light Load (Boost) FORCED CONTINUOUS MODE Burst Mode OPERATION 5A/DIV PULSESKIPPING MODE 2μs/DIV VOUT = 10V VIN = 7V ILOAD = 1mA FIGURE 12 CIRCUIT 3859 G16 Soft Start-Up (Boost) 1.212 REGULATED FEEDBACK VOLTAGE (V) 1.209 1.206 1.203 1.200 1.197 1.194 1.191 Boost Regulated Feedback Voltage vs Temperature VOUT3 2V/DIV GND 2ms/DIV VIN = 5V FIGURE 12 CIRCUIT 3859 G17 1.188 –45 –20 5 30 55 80 TEMPERATURE (°C) 105 130 3859 G18 3859f 7 LTC3859 TYPICAL PERFORMANCE CHARACTERISTICS INTVCC Line Regulation 5.5 5.50 5.45 5.4 INTVCC VOLTAGE (V) INTVCC VOLTAGE (V) 5.40 5.35 5.30 5.25 5.20 5.0 5.15 EXTVCC = 8.5V EXTVCC = 0V INTVCC and EXTVCC vs Load Current VBIAS = 12V EXTVCC AND INTVCC VOLTAGE (V) 6.0 5.8 5.6 5.4 5.2 5.0 4.8 4.6 4.4 4.2 0 20 40 60 80 100 120 140 160 180 200 LOAD CURRENT (mA) 3859 G20 EXTVCC Switchover and INTVCC Voltages vs Temperature INTVCC 5.3 5.2 EXTVCC RISING 5.1 EXTVCC FALLING 0 5 10 15 20 25 30 INPUT VOLTAGE (V) 35 40 4.0 –45 –20 5 30 55 80 TEMPERATURE (°C) 105 130 3859 G19 3859 G21 SENSE Pins Total Input Current vs VSENSE Voltage 800 700 SENSE CURRENT (μA) 600 500 400 300 200 100 0 0 10 15 20 25 30 35 5 VSENSE COMMON MODE VOLTAGE (V) 40 SENSE3 PIN SENSE1, 2 PINS SENSE CURRENT (μA) 900 800 700 Buck SENSE Pins Total Input Current vs Temperature 200 VOUT = 28V SENSE CURRENT (μA) 180 160 140 120 100 80 60 40 VOUT = 3.3V 5 30 35 55 80 TEMPERATURE (°C) 105 130 3859 G23 Boost SENSE Pin Total Input Current vs Temperature SENSE3+ PIN 600 500 400 300 200 100 0 –45 –20 20 0 –45 –20 5 SENSE3– PIN 30 35 55 80 TEMPERATURE (°C) 105 130 3859 G24 3859 G22 Maximum Current Sense Threshold vs Duty Cycle MAXIMUM CURRENT SENSE VOLTAGE (mV) MAXIMUM CURRENT SENSE VOLTAGE (mV) 80 70 60 50 BUCK 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 DUTY CYCLE (%) 3859 G25 Maximum Current Sense Threshold vs ITH Voltage 60 50 40 30 20 10 0 –10 –20 –30 0 0.2 0.4 PULSE-SKIPPING FORCED CONTINUOUS Burst Mode OPERATION 0.6 0.8 ITH (V) 1 1.2 1.4 SS CURRENT (μA) 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 Soft-Start Pull-Up Current vs Temperature BOOST 0.80 –45 –20 5 30 55 80 TEMPERATURE (°C) 105 130 3859 G26 3859 G27 3859f 8 LTC3859 TYPICAL PERFORMANCE CHARACTERISTICS Shutdown Current vs Temperature 22 20 SHUTDOWN CURRENT (μA) SHUTDOWN CURRENT (μA) 18 16 14 12 10 8 –45 0 –20 5 30 55 80 TEMPERATURE (°C) 105 130 QUIESCENT CURRENT (μA) 20 25 Shutdown Current vs Input Voltage 100 90 80 70 60 50 Quiescent Current vs Temperature ALL CHANNELS ON 15 10 5 ONE CHANNEL ON 5 10 20 25 30 15 INPUT VOLTAGE (V) 35 40 3859 G29 40 –45 –20 5 30 55 80 TEMPERATURE (°C) 105 130 3859 G28 3859 G30 Buck Foldback Current Limit 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 MAXIMUM CURRENT SENSE VOLTAGE (mV) 600 Oscillator Frequency vs Temperature 4.4 FREQ = INTVCC 550 INTVCC VOLTAGE (V) FREQUENCY (kHz) 500 450 400 FREQ = GND 350 300 –45 4.3 4.2 4.1 4.0 3.9 3.8 3.7 3.6 3.5 Undervoltage Lockout Threshold vs Temperature RISING FALLING 0 100 200 300 400 500 600 700 800 FEEDBACK VOLTAGE (mV) 3859 G31 –20 30 55 80 5 TEMPERATURE (°C) 105 130 3.4 –45 –20 5 30 55 80 TEMPERATURE (°C) 105 130 3859 G32 3859 G33 Shutdown (RUN) Threshold vs Temperature 1.40 CHARGE PUMP CHARGING CURRENT (μA) 1.35 RUN PIN VOLTAGE (V) 1.30 1.25 1.20 1.15 1.10 1.05 1.00 –45 –20 5 30 55 80 TEMPERATURE (°C) 105 130 RUN2,3 FALLING RUN1 FALLING RUN2,3 RISING RUN1 RISING 100 90 80 70 60 50 40 30 20 10 Charge Pump Charging Current vs Operating Frequency CHARGE PUMP CHARGING CURRENT (μA) VBOOST3 = 16V VSW3 = 12V –45°C 25°C 100 90 80 70 60 50 40 30 20 10 0 Charge Pump Charging Current vs Switch Voltage VBOOST3 – VSW3 = 4V FREQ = 0V FREQ = INTVCC 130°C 0 100 200 300 400 500 600 700 OPERATING FREQUENCY (kHz) 800 5 10 15 20 25 30 SWITCH VOLTAGE (V) 35 40 3859 G36 3859 G34 3859 G35 3859f 9 LTC3859 PIN FUNCTIONS (QFN/TSSOP) FREQ (Pin 1/Pin 5): The Frequency Control Pin for the Internal VCO. Connecting the pin to GND forces the VCO to a fixed low frequency of 350kHz. Connecting the pin to INTVCC forces the VCO to a fixed high frequency of 535kHz. Other frequencies between 50kHz and 900kHz can be programmed using a resistor between FREQ and GND. The resistor and an internal 20μA source current create a voltage used by the internal oscillator to set the frequency. PLLIN/MODE (Pin 2/Pin 6): External Synchronization Input to Phase Detector and Forced Continuous Mode Input. When an external clock is applied to this pin, the phase-locked loop will force the rising TG1 signal to be synchronized with the rising edge of the external clock, and the regulators operate in forced continuous mode. When not synchronizing to an external clock, this input, which acts on all three controllers, determines how the LTC3859 operates at light loads. Pulling this pin to ground selects Burst Mode operation. An internal 100k resistor to ground also invokes Burst Mode operation when the pin is floated. Tying this pin to INTVCC forces continuous inductor current operation. Tying this pin to a voltage greater than 1.2V and less than INTVCC – 1.3V selects pulse-skipping operation. This can be done by connecting a 100k resistor from this pin to INTVCC. SGND (Pin 8/Pin 12): Small Signal Ground common to both controllers, must be routed separately from high current grounds to the common (–) terminals of the CIN capacitors. RUN1, RUN2, RUN3 (Pins 9, 10, 11/Pins 13, 14, 15): Digital Run Control Inputs for Each Controller. Forcing either of these pins below 1.2V shuts down that controller. Forcing all of these pins below 0.7V shuts down the entire LTC3859, reducing quiescent current to approximately 14μA. OV3 (Pin 17/Pin 21): Overvoltage Open-Drain Logic Output for the Boost Regulator. OV3 is pulled to ground when the voltage on the VFB3 pin is under 110% of its set point, and becomes high impedance when VFB3 goes over 110% of its set point. INTVCC (Pin 22/Pin 26): Output of the Internal Linear Low Dropout Regulator. The driver and control circuits are powered from this voltage source. Must be decoupled to PGND with a minimum of 4.7μF ceramic or tantalum capacitor. The INTVCC pin should also be connected to the DRVCC pin, and should not be used for any other purpose. EXTVCC (Pin 23/Pin 27): External Power Input to an Internal LDO Connected to INTVCC. This LDO supplies INTVCC power, bypassing the internal LDO powered from VIN whenever EXTVCC is higher than 4.7V. See EXTVCC Connection in the Applications Information section. Do not exceed 14V on this pin. VBIAS (Pin 24/Pin 28): Main Bias Input Supply Pin. A bypass capacitor should be tied between this pin and the SGND pin. BG1, BG2, BG3 (Pins 29, 21, 25/Pins 33, 25, 29): High Current Gate Drives for Bottom (Synchronous) N-Channel MOSFETs. Voltage swing at these pins is from ground to INTVCC. BOOST1, BOOST2, BOOST3 (Pins 30, 20, 26/Pins 34, 24, 30): Bootstrapped Supplies to the Top Side Floating Drivers. Capacitors are connected between the BOOST and SW pins and Schottky diodes are tied between the BOOST and INTVCC pins. Voltage swing at the BOOST pins is from INTVCC to (VIN + INTVCC). SW1, SW2, SW3 (Pins 31, 19, 28/Pins 35, 23, 32): Switch Node Connections to Inductors. TG1, TG2, TG3 (Pins 32, 18, 27/Pins 36, 22, 31): High Current Gate Drives for Top N-Channel MOSFETs. These are the outputs of floating drivers with a voltage swing equal to INTVCC superimposed on the switch node voltage SW. PGOOD1 (Pin 33/Pin 37): Open-Drain Logic Output. PGOOD1 is pulled to ground when the voltage on the VFB1 pin is not within ±10% of its set point. 3859f 10 LTC3859 PIN FUNCTIONS (QFN/TSSOP) TRACK/SS1, TRACK/SS2, SS3 (Pins 34, 16, 3/Pins 38, 20, 7): External Tracking and Soft-Start Input. For the buck channels, the LTC3859 regulates the VFB1,2 voltage to the smaller of 0.8V, or the voltage on the TRACK/SS1,2 pin. For the boost channel, the LTC3859 regulates the VFB3 voltage to the smaller of 1.2V, or the voltage on the SS3 pin. An internal 1μA pull-up current source is connected to this pin. A capacitor to ground at this pin sets the ramp time to final regulated output voltage. Alternatively, a resistor divider on another voltage supply connected to the TRACK/SS pins of the buck channels allow the LTC3859 buck outputs to track the other supply during start-up. ITH1, ITH2, ITH3 (Pins 35, 15, 7/Pins 1, 19, 11): Error Amplifier Outputs and Switching Regulator Compensation Points. Each associated channel’s current comparator trip point increases. VFB1, VFB2, VFB3 (Pins 36, 14, 6/Pins 2, 18, 10): Receives the remotely sensed feedback voltage for each controller from an external resistive divider across the output. SENSE1+, SENSE2+, SENSE3+ (Pins 37, 13, 4/Pins 3, 17, 8): The (+) Input to the Differential Current Comparators. The ITH pin voltage and controlled offsets between the SENSE– and SENSE+ pins in conjunction with RSENSE set the current trip threshold. For the boost channel, the SENSE3+ pin supplies current to the current comparator. SENSE1–, SENSE2–, SENSE3– (Pins 38, 12, 5/Pins 4, 16, 9): The (–) Input to the Differential Current Comparators. When SENSE1,2– for the buck channels is greater than INTVCC, then SENSE1,2– pin supplies current to the current comparator. PGND (Exposed Pad Pin 39): Driver Power Ground. Connects to the sources of bottom (synchronous) N-channel MOSFETs and the (–) terminal(s) of CIN. The exposed pad must be soldered to the PCB for rated electrical and thermal performance. 3859f 11 LTC3859 FUNCTIONAL DIAGRAM + – –+ 3mV SYNC DET 2.8V 0.65V 100k SLOPE COMP VBIAS EXTVCC OV 5.4V LDO EN 11V SGND INTVCC RUN SHDN RST 2(VFB) 6μA CH1 0.5μA CH2 FOLDBACK 5.4V LDO EN 4.7V + – –+ 12 BUCK CHANNELS 1 AND 2 INTVCC BOOST DROPOUT DET BOT TOP S R SW SHDN INTVCC VCO CLK1 BOT BG CLK2 COUT VOUT1,2 Q Q TOPON D SWITCHING LOGIC CIN TG CB VFB1 DB VIN1,2 PGOOD1 + – 0.88V + – 0.72V FREQ 20μA CLP ICMP IR PFD + – SLEEP PGND + – SENSE + L RSENSE SENSE– VFB + EA – – RB 0.80V TRACK/SS RA + – 0.88V ITH CC 1μA TRACK/SS CSS SHDN CC2 RC 3859 BD 3859f BOOST CHANNEL 3 INTVCC BOOST3 DB VOUT3 CLK1 S R SHDN SWITCHING LOGIC SW3 INTVCC BOT 0.425V SLEEP PGND BG3 CIN PLLIN/MODE TOP COUT TG3 Q CB Q FUNCTIONAL DIAGRAM BOTON VIN3 OV3 ICMP IR + – + +– – 2mV SENSE3– + – + – –+ 2.8V 0.7V 1.32V VFB3 L RSENSE SENSE3+ SLOPE COMP SNSLO 2V + – + EA – – OV VFB3 1.2V SS3 RB RA + – 1μA 1.32V ITH3 SS3 CSS CC 0.5μA CC2 SHDN SNSLO RC 11V RUN3 3859 BD LTC3859 13 3859f LTC3859 OPERATION Main Control Loop The LTC3859 uses a constant frequency, current mode step-down architecture. The two buck controllers, channels 1 and 2, operate 180 degrees out of phase with each other. The boost controller, channel 3, operates in phase with channel 1. During normal operation, the external top MOSFET for the buck channels (the external bottom MOSFET for the boost channel) is turned on when the clock for that channel sets the RS latch, and is turned off when the main current comparator, ICMP resets the RS , latch. The peak inductor current at which ICMP trips and resets the latch is controlled by the voltage on the ITH pin, which is the output of the error amplifier EA. The error amplifier compares the output voltage feedback signal at the VFB pin, (which is generated with an external resistor divider connected across the output voltage, VOUT, to ground) to the internal 0.800V reference voltage for the bucks (1.2V reference voltage for the boost). When the load current increases, it causes a slight decrease in VFB relative to the reference, which causes the EA to increase the ITH voltage until the average inductor current matches the new load current. After the top MOSFET for the bucks (the bottom MOSFET for the boost) is turned off each cycle, the bottom MOSFET is turned on (the top MOSFET for the boost) until either the inductor current starts to reverse, as indicated by the current comparator IR, or the beginning of the next clock cycle. INTVCC/EXTVCC Power Power for the top and bottom MOSFET drivers and most other internal circuitry is derived from the INTVCC pin. When the EXTVCC pin is left open or tied to a voltage less than 4.7V, the VBIAS LDO (low dropout linear regulator) supplies 5.4V from VBIAS to INTVCC. If EXTVCC is taken above 4.7V, the VBIAS LDO is turned off and an EXTVCC LDO is turned on. Once enabled, the EXTVCC LDO supplies 5.4V from EXTVCC to INTVCC. Using the EXTVCC pin allows the INTVCC power to be derived from a high efficiency external source such as one of the LTC3859 switching regulator outputs. (Refer to Functional Diagram) Each top MOSFET driver is biased from the floating bootstrap capacitor CB, which normally recharges during each cycle through an external diode when the switch voltage goes low. For buck channels 1 and 2, if the buck’s input voltage decreases to a voltage close to its output, the loop may enter dropout and attempt to turn on the top MOSFET continuously. The dropout detector detects this and forces the top MOSFET off for about one twelfth of the clock period every tenth cycle to allow CB to recharge. Shutdown and Start-Up (RUN1, RUN2, RUN3 and TRACK/SS1, TRACK/SS2, SS3 Pins) The three channels of the LTC3859 can be independently shut down using the RUN1, RUN2 and RUN3 pins. Pulling any of these pins below 1.2V shuts down the main control loop for that channel. Pulling all three pins below 0.7V disables all controllers and most internal circuits, including the INTVCC LDOs. In this state, the LTC3859 draws only 14μA of quiescent current. Releasing a RUN pin allows a small internal current to pull up the pin to enable that controller. The RUN1 pin has a 6μA pull-up current while the RUN2 and RUN3 pins have a smaller 0.5μA. The 6μA current on RUN1 is designed to be large enough so that the RUN1 pin can be safely floated (to always enable the controller) without worry of condensation or other small board leakage pulling the pin down. This is ideal for always-on applications where one or more controllers are enabled continuously and never shut down. Each RUN pin may also be externally pulled up or driven directly by logic. When driving a RUN pin with a low impedance source, do not exceed the absolute maximum rating of 8V. Each RUN pin has an internal 11V voltage clamp that allows the RUN pin to be connected through a resistor to a higher voltage (for example, VBIAS), so long as the maximum current in the RUN pin does not exceed 100μA. The start-up of each channel’s output voltage VOUT is controlled by the voltage on the TRACK/SS pin (TRACK/SS1 for channel 1, TRACK/SS2 for channel 2, SS3 for channel 3). When the voltage on the TRACK/SS pin is less than the 3859f 14 LTC3859 OPERATION 0.8V internal reference for the bucks and the 1.2V internal reference for the boost, the LTC3859 regulates the VFB voltage to the TRACK/SS pin voltage instead of the corresponding reference voltage. This allows the TRACK/SS pin to be used to program a soft-start by connecting an external capacitor from the TRACK/SS pin to SGND. An internal 1μA pull-up current charges this capacitor creating a voltage ramp on the TRACK/SS pin. As the TRACK/SS voltage rises linearly from 0V to 0.8V/1.2V (and beyond up to INTVCC), the output voltage VOUT rises smoothly from zero to its final value. Alternatively the TRACK/SS pins for buck channels 1 and 2 can be used to cause the start-up of VOUT to track that of another supply. Typically, this requires connecting to the TRACK/SS pin an external resistor divider from the other supply to ground (see the Applications Information section). Light Load Current Operation (Burst Mode Operation, Pulse-Skipping, or Continuous Conduction) (PLLIN/MODE Pin) The LTC3859 can be enabled to enter high efficiency Burst Mode operation, constant frequency pulse-skipping mode or forced continuous conduction mode at low load currents. To select Burst Mode operation, tie the PLLIN/ MODE pin to ground. To select forced continuous operation, tie the PLLIN/MODE pin to INTVCC. To select pulse-skipping mode, tie the PLLIN/MODE pin to a DC voltage greater than 1.2V and less than INTVCC – 1.3V. When a controller is enabled for Burst Mode operation, the minimum peak current in the inductor is set to approximately 25% of the maximum sense voltage (30% for the boost) even though the voltage on the ITH pin indicates a lower value. If the average inductor current is higher than the load current, the error amplifier EA will decrease the voltage on the ITH pin. When the ITH voltage drops below 0.425V, the internal sleep signal goes high (enabling sleep mode) and both external MOSFETs are turned off. The ITH pin is then disconnected from the output of the EA and parked at 0.450V. In sleep mode, much of the internal circuitry is turned off, reducing the quiescent current that the LTC3859 draws. If one channel is in sleep mode and the other two are shut down, the LTC3859 draws only 55μA of quiescent current. If two channels are in sleep mode and the other shut down, it draws only 65μA of quiescent current. If all three controllers are enabled in sleep mode, the LTC3859 draws only 80μA of quiescent. In sleep mode, the load current is supplied by the output capacitor. As the output voltage decreases, the EA’s output begins to rise. When the output voltage drops enough, the ITH pin is reconnected to the output of the EA, the sleep signal goes low, and the controller resumes normal operation by turning on the top external MOSFET on the next cycle of the internal oscillator. When a controller is enabled for Burst Mode operation, the inductor current is not allowed to reverse. The reverse current comparator (IR) turns off the bottom external MOSFET (the top external MOSFET for the boost) just before the inductor current reaches zero, preventing it from reversing and going negative. Thus, the controller operates in discontinuous operation. In forced continuous operation or clocked by an external clock source to use the phase-locked loop (see the Frequency Selection and Phase-Locked Loop section), the inductor current is allowed to reverse at light loads or under large transient conditions. The peak inductor current is determined by the voltage on the ITH pin, just as in normal operation. In this mode, the efficiency at light loads is lower than in Burst Mode operation. However, continuous operation has the advantage of lower output voltage ripple and less interference to audio circuitry. In forced continuous mode, the output ripple is independent of load current. When the PLLIN/MODE pin is connected for pulse-skipping mode, the LTC3859 operates in PWM pulse-skipping mode at light loads. In this mode, constant frequency operation is maintained down to approximately 1% of designed maximum output current. At very light loads, the current comparator ICMP may remain tripped for several cycles and force the external top MOSFET to stay off for the same number of cycles (i.e., skipping pulses). The inductor current is not allowed to reverse (discontinuous operation). This mode, like forced continuous operation, exhibits low output ripple as well as low audio noise and reduced RF interference as compared to Burst Mode operation. It provides higher low current efficiency than forced continuous mode, but not nearly as high as Burst Mode operation. 3859f 15 LTC3859 OPERATION Frequency Selection and Phase-Locked Loop (FREQ and PLLIN/MODE Pins) The selection of switching frequency is a tradeoff between efficiency and component size. Low frequency operation increases efficiency by reducing MOSFET switching losses, but requires larger inductance and/or capacitance to maintain low output ripple voltage. The switching frequency of the LTC3859’s controllers can be selected using the FREQ pin. If the PLLIN/MODE pin is not being driven by an external clock source, the FREQ pin can be tied to SGND, tied to INTVCC, or programmed through an external resistor. Tying FREQ to SGND selects 350kHz while tying FREQ to INTVCC selects 535kHz. Placing a resistor between FREQ and SGND allows the frequency to be programmed between 50kHz and 900kHz. A phase-locked loop (PLL) is available on the LTC3859 to synchronize the internal oscillator to an external clock source that is connected to the PLLIN/MODE pin. The LTC3859’s phase detector adjusts the voltage (through an internal lowpass filter) of the VCO input to align the turn-on of controller 1’s external top MOSFET to the rising edge of the synchronizing signal. Thus, the turn-on of controller 2’s external top MOSFET is 180 degrees out of phase to the rising edge of the external clock source. The VCO input voltage is pre-biased to the operating frequency set by the FREQ pin before the external clock is applied. If prebiased near the external clock frequency, the PLL loop only needs to make slight changes to the VCO input in order to synchronize the rising edge of the external clock’s to the rising edge of TG1. The ability to pre-bias the loop filter allows the PLL to lock in rapidly without deviating far from the desired frequency. The typical capture range of the LTC3859’s phase-locked loop is from approximately 55kHz to 1MHz, with a guarantee over all manufacturing variations to be between 75kHz and 850kHz. In other words, the LTC3859’s PLL is guaranteed to lock to an external clock source whose frequency is between 75kHz and 850kHz. The typical input clock thresholds on the PLLIN/MODE pin are 1.6V (rising) and 1.2V (falling). Boost Controller Operation When VIN > VOUT When the input voltage to the boost channel rises above its regulated VOUT voltage, the controller can behave differently depending on the mode, inductor current and VIN voltage. In forced continuous mode, the loop works to keep the top MOSFET on continuously once VIN rises above VOUT. An internal charge pump delivers current to the boost capacitor from the BST3 pin to maintain a sufficiently high TG voltage. (The amount of current the charge pump can deliver is characterized by two curves in the Typical Performance Characteristics section.) In pulse-skipping mode, if VIN is between 100% and 110% of the regulated VOUT voltage, TG turns on if the inductor current rises above a certain threshold and turns off if the inductor current falls below this threshold. This threshold current is set approximately to 3% of the programmed maximum ILIM current. If the controller is programmed to Burst Mode operation under this same VIN window, then TG remains off regardless of the inductor current. If VIN rises above 110% of the regulated VOUT voltage in any mode, the controller turns on TG regardless of the inductor current. In Burst Mode operation, however, the internal charge pump turns off if the entire chip is asleep (the two buck channels are asleep or shut down). With the charge pump off, there would be nothing to prevent the boost capacitor from discharging, resulting in an insufficient TG voltage needed to keep the top MOSFET completely on. To prevent excessive power dissipation across the body diode of the top MOSFET in this situation, the chip can be switched over to forced continuous mode to enable the charge pump, or a Schottky diode can also be placed in parallel with the top MOSFET. Boost Controller at Low SENSE Pin Common Voltage The current comparator of the boost controller is powered directly from the SENSE3+ pin and can operate to voltages as low as 2.5V. Since this is lower than the VBIAS UVLO of the chip, VBIAS can be connected to the output of the boost controller, as illustrated in the typical application circuit in Figure 12. This allows the boost controller to handle input voltage transients down to 2.5V while maintaining output voltage regulation. If the SENSE3+ rises back above 2.5V, the SS3 pin will be released initiating a new soft-start sequence. 3859f 16 LTC3859 OPERATION Buck Controller Output Overvoltage Protection The two buck channels have an overvoltage comparator that guards against transient overshoots as well as other more serious conditions that may overvoltage their outputs. When the VFB1,2 pin rises by more than 10% above its regulation point of 0.800V, the top MOSFET is turned off and the bottom MOSFET is turned on until the overvoltage condition is cleared. Channel 1 Power Good (PGOOD1) Channel 1 has a PGOOD1 pin that is connected to an open drain of an internal N-channel MOSFET. The MOSFET turns on and pulls the PGOOD1 pin low when the VFB1 pin voltage is not within ±10% of the 0.8V reference voltage for the buck channel. The PGOOD1 pin is also pulled low when the RUN1 pin is low (shut down). When the VFB1 pin voltage is within the ±10% requirement, the MOSFET is turned off and the pin is allowed to be pulled up by an external resistor to a source no greater than 6V. Boost Overvoltage Indicator (OV3) The OV3 pin is an overvoltage indicator that signals whether the output voltage of the channel 3 boost controller goes over its programmed regulated voltage. The pin is connected to an open drain of an internal N-channel MOSFET. The MOSFET turns on and pulls the OV3 pin low when the VFB3 pin voltage is less than 110% of the 1.2V reference voltage for the boost channel. The OV3 pin is also pulled low when the RUN3 pin is low (shut down). When the VFB3 pin voltage goes higher than 110% of the 1.2V reference, the MOSFET is turned off and the pin is allowed to be pulled up by an external resistor to a source no greater than 6V. THEORY AND BENEFITS OF 2-PHASE OPERATION Why the need for 2-phase operation? Up until the 2-phase family, constant-frequency dual switching regulators operated both channels in phase (i.e., single-phase operation). This means that both switches turned on at the same time, causing current pulses of up to twice the amplitude of those for one regulator to be drawn from the input capacitor and battery. These large amplitude current pulses increased the total RMS current flowing from the input capacitor, requiring the use of more expensive input capacitors and increasing both EMI and losses in the input capacitor and battery. With 2-phase operation, the two buck controllers of the LTC3859 are operated 180 degrees out of phase. This effectively interleaves the current pulses drawn by the switches, greatly reducing the overlap time where they add together. The result is a significant reduction in total RMS input current, which in turn allows less expensive input capacitors to be used, reduces shielding requirements for EMI and improves real world operating efficiency. Buck Foldback Current When the buck output voltage falls to less than 70% of its nominal level, foldback current limiting is activated, progressively lowering the peak current limit in proportion to the severity of the overcurrent or short-circuit condition. Foldback current limiting is disabled during the soft-start interval (as long as the VFB voltage is keeping up with the TRACK/SS1,2 voltage). There is no foldback current limiting for the boost channel. 3859f 17 LTC3859 OPERATION 5V SWITCH 20V/DIV 3.3V SWITCH 20V/DIV INPUT CURRENT 5A/DIV INPUT VOLTAGE 500mV/DIV IIN(MEAS) = 2.53ARMS 3859 F01a IIN(MEAS) = 1.55ARMS 3859 F01b (a) (b) Figure 1. Input Waveforms Comparing Single-Phase (a) and 2-Phase (b) Operation for Dual Switching Regulators Converting 12V to 5V and 3.3V at 3A Each. The Reduced Input Ripple with the 2-Phase Regulator Allows Less Expensive Input Capacitors, Reduces Shielding Requirements for EMI and Improves Efficiency Of course, the improvement afforded by 2-phase operation is a function of the dual switching regulator’s relative duty cycles which, in turn, are dependent upon the input voltage VIN (Duty Cycle = VOUT/VIN). Figure 2 shows how the RMS input current varies for single-phase and 2-phase operation for 3.3V and 5V regulators over a wide input voltage range. INPUT RMS CURRENT (A) Figure 1 compares the input waveforms for a representative single-phase dual switching regulator to the 2-phase dual buck controllers of the LTC3859. An actual measurement of the RMS input current under these conditions shows that 2-phase operation dropped the input current from 2.53ARMS to 1.55ARMS. While this is an impressive reduction in itself, remember that the power losses are proportional to IRMS2, meaning that the actual power wasted is reduced by a factor of 2.66. The reduced input ripple voltage also means less power is lost in the input power path, which could include batteries, switches, trace/connector resistances and protection circuitry. Improvements in both conducted and radiated EMI also directly accrue as a result of the reduced RMS input current and voltage. It can readily be seen that the advantages of 2-phase operation are not just limited to a narrow operating range, for most applications is that 2-phase operation will reduce the input capacitor requirement to that for just one channel operating at maximum current and 50% duty cycle. The schematic on the first page is a basic LTC3859 application circuit. External component selection is driven by the load requirement, and begins with the selection of RSENSE and the inductor value. Next, the power MOSFETs are selected. Finally, CIN and COUT are selected. 3.0 2.5 2.0 1.5 1.0 0.5 0 2-PHASE DUAL CONTROLLER SINGLE PHASE DUAL CONTROLLER VO1 = 5V/3A VO2 = 3.3V/3A 0 10 20 30 INPUT VOLTAGE (V) 40 3859 F02 Figure 2. RMS Input Current Comparison 3859f 18 LTC3859 APPLICATIONS INFORMATION The Typical Application on the first page is a basic LTC3859 application circuit. LTC3859 can be configured to use either DCR (inductor resistance) sensing or low value resistor sensing. The choice between the two current sensing schemes is largely a design trade-off between cost, power consumption, and accuracy. DCR sensing is becoming popular because it saves expensive current sensing resistors and is more power efficient, especially in high current applications. However, current sensing resistors provide the most accurate current limits for the controller. Other external component selection is driven by the load requirement, and begins with the selection of RSENSE (if RSENSE is used) and inductor value. Next, the power MOSFETs and Schottky diodes are selected. Finally, input and output capacitors are selected. SENSE+ and SENSE– Pins The SENSE+ and SENSE– pins are the inputs to the current comparators. CURRENT FLOW 3859 F03 on the SENSE3– pin allows the current comparator to be used in inductor DCR sensing. Filter components mutual to the sense lines should be placed close to the LTC3859, and the sense lines should run close together to a Kelvin connection underneath the current sense element (shown in Figure 3). Sensing current elsewhere can effectively add parasitic inductance and capacitance to the current sense element, degrading the information at the sense terminals and making the programmed current limit unpredictable. If DCR sensing is used (Figure 4b), sense resistor R1 should be placed close to the switching node, to prevent noise from coupling into sensitive small-signal nodes. TO SENSE FILTER NEXT TO THE CONTROLLER Buck Controllers (SENSE1+/SENSE1–,SENSE2+/SENSE2–): The common mode voltage range on these pins is 0V to 28V (absolute maximum), enabling the LTC3859 to regulate buck output voltages up to a nominal 24V (allowing margin for tolerances and transients). The SENSE+ pin is high impedance over the full common mode range, drawing at most ±1μA. This high impedance allows the current comparators to be used in inductor DCR sensing. The impedance of the SENSE– pin changes depending on the common mode voltage. When SENSE– is less than INTVCC –0.5V, a small current of less than 1μA flows out of the pin. When SENSE– is above INTVCC +0.5V, a higher current (≈700μA) flows into the pin. Between INTVCC –0.5V and INTVCC +0.5V, the current transitions from the smaller current to the higher current. INDUCTOR OR RSENSE Figure 3. Sense Lines Placement with Inductor or Sense Resistor Low Value Resistor Current Sensing A typical sensing circuit using a discrete resistor is shown in Figure 4a. RSENSE is chosen based on the required output current. The current comparators have a maximum threshold VSENSE(MAX) of 50mV. The current comparator threshold sets the peak of the inductor current, yielding a maximum average output current, IMAX, equal to the peak value less half the peak-to-peak ripple current, ΔIL. To calculate the sense resistor value, use the equation: VSENSE(MAX) RSENSE = ΔI IMAX + L 2 When using the buck controllers in very low dropout conditions, the maximum output current level will be reduced due to the internal compensation required to meet stability criterion for buck regulators operating at greater than 50% duty factor. A curve is provided in the Typical Performance Characteristics section to estimate this reduction in peak output current level depending upon the operating duty factor. 3859f Boost Controller (SENSE3+/SENSE3–): The common mode input range for these pins is 2.5V to 38V, allowing the boost converter to operate from inputs over this full range. The SENSE3+ pin also provides power to the current comparator and draws about 170μA during normal operation (when not shut down or asleep in Burst Mode operation). There is a small bias current of less than 1μA that flows out of the SENSE3– pin. This high impedance 19 LTC3859 APPLICATIONS INFORMATION INTVCC BOOST TG LTC3859 SW BG SENSE1,2+ (SENSE3–) SENSE1, 2– (SENSE3+) SGND 3859 F04a VIN1,2 (VOUT3) RSENSE VOUT1,2 (VIN3) CAP PLACED NEAR SENSE PINS If the external R1||R2 • C1 time constant is chosen to be exactly equal to the L/DCR time constant, the voltage drop across the external capacitor is equal to the drop across the inductor DCR multiplied by R2/(R1 + R2). R2 scales the voltage across the sense terminals for applications where the DCR is greater than the target sense resistor value. To properly dimension the external filter components, the DCR of the inductor must be known. It can be measured using a good RLC meter, but the DCR tolerance is not always the same and varies with temperature; consult the manufacturers’ data sheets for detailed information. Using the inductor ripple current value from the Inductor Value Calculation section, the target sense resistor value is: VSENSE(MAX) RSENSE(EQUIV) = ΔI IMAX + L 2 To ensure that the application will deliver full load current over the full operating temperature range, determine RSENSE(EQUIV), keeping in mind that the maximum current sense threshold (VSENSE(MAX)) for the LTC3859 is fixed at 50mV. Next, determine the DCR of the inductor. Where provided, use the manufacturer’s maximum value, usually given at 20°C. Increase this value to account for the temperature coefficient of resistance, which is approximately 0.4%/°C. A conservative value for TL(MAX) is 100°C. To scale the maximum inductor DCR to the desired sense resistor value, use the divider ratio: RSENSE(EQUIV) RD = DCRMAX at TL(MAX) C1 is usually selected to be in the range of 0.1μF to 0.47μF . This forces R1||R2 to around 2k, reducing error that might have been caused by the SENSE+ pin’s ±1μA current. The equivalent resistance R1||R2 is scaled to the room temperature inductance and maximum DCR: L R1P R2 = (DCR at 20°C) • C1 The sense resistor values are: R1= R1• RD R1P R2 ; R2 = RD 1− RD 4a. Using a Resistor to Sense Current INTVCC BOOST TG LTC3859 SW BG SENSE1, 2+ (SENSE3–) SENSE1, 2– (SENSE3+) SGND 3859 F04b VIN1,2 (VOUT3) INDUCTOR L DCR VOUT1,2 (VIN3) R1 C1* R2 *PLACE C1 NEAR SENSE PINS (R1||R2) • C1 = L/DCR RSENSE(EQ) = DCR(R2/(R1+R2)) 4b. Using the Inductor DCR to Sense Current Figure 4. Current Sensing Methods Inductor DCR Sensing For applications requiring the highest possible efficiency at high load currents, the LTC3859 is capable of sensing the voltage drop across the inductor DCR, as shown in Figure 4b. The DCR of the inductor represents the small amount of DC winding resistance of the copper, which can be less than 1mΩ for today’s low value, high current inductors. In a high current application requiring such an inductor, conduction loss through a sense resistor would cost several points of efficiency compared to DCR sensing. 3859f 20 LTC3859 APPLICATIONS INFORMATION The maximum power loss in R1 is related to duty cycle. For the buck controllers, the maximum power loss will occur in continuous mode at the maximum input voltage: PLOSS R1= (VIN(MAX) − VOUT ) • VOUT R1 Accepting larger values of ΔIL allows the use of low inductances, but results in higher output voltage ripple and greater core losses. A reasonable starting point for setting ripple current is ΔIL = 0.3(IMAX). The maximum ΔIL occurs at the maximum input voltage for the bucks and VIN = 1/2•VOUT for the boost. The inductor value also has secondary effects. The transition to Burst Mode operation begins when the average inductor current required results in a peak current below 25% of the current limit (30% for the boost) determined by RSENSE. Lower inductor values (higher ΔIL) will cause this to occur at lower load currents, which can cause a dip in efficiency in the upper range of low current operation. In Burst Mode operation, lower inductance values will cause the burst frequency to decrease. Inductor Core Selection Once the value for L is known, the type of inductor must be selected. High efficiency converters generally cannot afford the core loss found in low cost powdered iron cores, forcing the use of more expensive ferrite or molypermalloy cores. Actual core loss is independent of core size for a fixed inductor value, but it is very dependent on inductance selected. As inductance increases, core losses go down. Unfortunately, increased inductance requires more turns of wire and therefore copper losses will increase. Ferrite designs have very low core loss and are preferred at high switching frequencies, so design goals can concentrate on copper loss and preventing saturation. Ferrite core material saturates “hard,” which means that inductance collapses abruptly when the peak design current is exceeded. This results in an abrupt increase in inductor ripple current and consequent output voltage ripple. Do not allow the core to saturate! Power MOSFET and Schottky Diode (Optional) Selection Two external power MOSFETs must be selected for each controller in the LTC3859: one N-channel MOSFET for the top switch (main switch for the buck, synchronous for the boost), and one N-channel MOSFET for the bottom switch (main switch for the boost, synchronous for the buck). 3859f For the boost controller, the maximum power loss in R1 will occur in continuous mode at VIN = 1/2•VOUT : PLOSS R1= (VOUT(MAX) − VIN ) • VIN R1 Ensure that R1 has a power rating higher than this value. If high efficiency is necessary at light loads, consider this power loss when deciding whether to use DCR sensing or sense resistors. Light load power loss can be modestly higher with a DCR network than with a sense resistor, due to the extra switching losses incurred through R1. However, DCR sensing eliminates a sense resistor, reduces conduction losses and provides higher efficiency at heavy loads. Peak efficiency is about the same with either method. Inductor Value Calculation The operating frequency and inductor selection are interrelated in that higher operating frequencies allow the use of smaller inductor and capacitor values. So why would anyone ever choose to operate at lower frequencies with larger components? The answer is efficiency. A higher frequency generally results in lower efficiency because of MOSFET gate charge losses. In addition to this basic trade-off, the effect of inductor value on ripple current and low current operation must also be considered. The inductor value has a direct effect on ripple current. The inductor ripple current ΔIL decreases with higher inductance or frequency. For the buck controllers, ΔIL increases with higher VIN: ⎛V⎞ 1 ΔIL = VOUT ⎜ 1− OUT ⎟ (f)(L) VIN ⎠ ⎝ For the boost controller, the inductor ripple current ΔIL increases with higher VOUT: ΔIL = ⎛ V⎞ 1 VIN ⎜ 1− IN ⎟ (f)(L) ⎝ VOUT ⎠ 21 LTC3859 APPLICATIONS INFORMATION The peak-to-peak drive levels are set by the INTVCC voltage. This voltage is typically 5.4V during start-up (see EXTVCC Pin Connection). Consequently, logic-level threshold MOSFETs must be used in most applications. Pay close attention to the BVDSS specification for the MOSFETs as well; many of the logic level MOSFETs are limited to 30V or less. Selection criteria for the power MOSFETs include the on-resistance RDS(ON), Miller capacitance CMILLER, input voltage and maximum output current. Miller capacitance, CMILLER, can be approximated from the gate charge curve usually provided on the MOSFET manufacturers’ data sheet. CMILLER is equal to the increase in gate charge along the horizontal axis while the curve is approximately flat divided by the specified change in VDS. This result is then multiplied by the ratio of the application applied VDS to the gate charge curve specified VDS. When the IC is operating in continuous mode the duty cycles for the top and bottom MOSFETs are given by: V Buck Main Switch Duty Cycle = OUT VIN V −V Buck Sync Switch Duty Cycle = IN OUT VIN V −V Boost Main Switch Duty Cycle = OUT IN VOUT Boost Sync Switch Duty Cycle = VIN VOUT PMAIN _ BOOST = ( VOUT − VIN ) VOUT VIN ⎛ V2 ⎡ OUT 2 (IOUT(MAX) ) 2 • (1+ δ )RDS(ON) + ⎜ ⎝ VIN ⎞ ⎛ IOUT(MAX) ⎞ ⎟⎜ ⎟• 2 ⎠ ⎠⎝ 1 1⎤ + ⎥ (f) − VTHMIN VTHMIN ⎦ ⎣ INTVCC 2 VIN PSYNC _ BOOST = IOUT(MAX) (1+ δ )RDS(ON) VOUT (RDR )(CMILLER ) • ⎢ V ( ) where ζ is the temperature dependency of RDS(ON) and RDR (approximately 2Ω) is the effective driver resistance at the MOSFET’s Miller threshold voltage. VTHMIN is the typical MOSFET minimum threshold voltage. Both MOSFETs have I2R losses while the main N-channel equations for the buck and boost controllers include an additional term for transition losses, which are highest at high input voltages for the bucks and low input voltages for the boost. For VIN < 20V (high VIN for the boost) the high current efficiency generally improves with larger MOSFETs, while for VIN > 20V (low VIN for the boost) the transition losses rapidly increase to the point that the use of a higher RDS(ON) device with lower CMILLER actually provides higher efficiency. The synchronous MOSFET losses for the buck controllers are greatest at high input voltage when the top switch duty factor is low or during a short-circuit when the synchronous switch is on close to 100% of the period. The synchronous MOSFET losses for the boost controller are greatest when the input voltage approaches the output voltage or during an overvoltage event when the synchronous switch is on 100% of the period. The term (1+ ζ) is generally given for a MOSFET in the form of a normalized RDS(ON) vs Temperature curve, but ζ = 0.005/°C can be used as an approximation for low voltage MOSFETs. The optional Schottky diodes D4, D5, and D6 shown in Figure 13 conduct during the dead-time between the conduction of the two power MOSFETs. This prevents the body diode of the synchronous MOSFET from turning on, storing charge during the dead-time and requiring a reverse recovery period that could cost as much as 3% in efficiency at high VIN. A 1A to 3A Schottky is generally 3859f The MOSFET power dissipations at maximum output current are given by: PMAIN _ BUCK = VOUT I VIN OUT(MAX) ( ) (1+ δ )R 2 DS(ON) + ⎛ IOUT(MAX) ⎞ (VIN )2 ⎜ ⎟ (RDR )(CMILLER ) • 2 ⎝ ⎠ ⎡ 1 1⎤ + ⎢ ⎥ (f) ⎣ VINTVCC − VTHMIN VTHMIN ⎦ V −V PSYNC _ BUCK = IN OUT IOUT(MAX) VIN ( ) (1+ δ )R 2 DS(ON) 22 LTC3859 APPLICATIONS INFORMATION a good compromise for both regions of operation due to the relatively small average current. Larger diodes result in additional transition losses due to their larger junction capacitance. Boost CIN, COUT Selection The input ripple current in a boost converter is relatively low (compared with the output ripple current), because this current is continuous. The boost input capacitor CIN voltage rating should comfortably exceed the maximum input voltage. Although ceramic capacitors can be relatively tolerant of overvoltage conditions, aluminum electrolytic capacitors are not. Be sure to characterize the input voltage for any possible overvoltage transients that could apply excess stress to the input capacitors. The value of CIN is a function of the source impedance, and in general, the higher the source impedance, the higher the required input capacitance. The required amount of input capacitance is also greatly affected by the duty cycle. High output current applications that also experience high duty cycles can place great demands on the input supply, both in terms of DC current and ripple current. In a boost converter, the output has a discontinuous current, so COUT must be capable of reducing the output voltage ripple. The effects of ESR (equivalent series resistance) and the bulk capacitance must be considered when choosing the right capacitor for a given output ripple voltage. The steady ripple due to charging and discharging the bulk capacitance is given by: COUT • VOUT • f where COUT is the output filter capacitor. Ripple = IOUT(MAX) • VOUT − VIN(MIN) Capacitors are now available with low ESR and high ripple current ratings such as OS-CON and POSCAP . Buck CIN, COUT Selection The selection of CIN for the two buck controllers is simplified by the 2-phase architecture and its impact on the worstcase RMS current drawn through the input network (battery/fuse/capacitor). It can be shown that the worst-case capacitor RMS current occurs when only one controller is operating. The controller with the highest (VOUT)(IOUT) product needs to be used in the formula shown in Equation (1) to determine the maximum RMS capacitor current requirement. Increasing the output current drawn from the other controller will actually decrease the input RMS ripple current from its maximum value. The out-of-phase technique typically reduces the input capacitor’s RMS ripple current by a factor of 30% to 70% when compared to a single phase power supply solution. In continuous mode, the source current of the top MOSFET is a square wave of duty cycle (VOUT)/(VIN). To prevent large voltage transients, a low ESR capacitor sized for the maximum RMS current of one channel must be used. The maximum RMS capacitor current is given by: CIN Required IRMS ≈ 1/ 2 IMAX ⎡( VOUT ) ( VIN − VOUT ) ⎤ ⎣ ⎦ (1) VIN ( )V The steady ripple due to the voltage drop across the ESR is given by: ΔVESR = IL(MAX) • ESR Multiple capacitors placed in parallel may be needed to meet the ESR and RMS current handling requirements. Dry tantalum, special polymer, aluminum electrolytic and ceramic capacitors are all available in surface mount packages. Ceramic capacitors have excellent low ESR characteristics but can have a high voltage coefficient. This formula has a maximum at VIN = 2VOUT, where IRMS = IOUT/2. This simple worst-case condition is commonly used for design because even significant deviations do not offer much relief. Note that capacitor manufacturers’ ripple current ratings are often based on only 2000 hours of life. This makes it advisable to further derate the capacitor, or to choose a capacitor rated at a higher temperature than required. Several capacitors may be paralleled to meet size or height requirements in the design. Due to the high operating frequency of the LTC3859, ceramic capacitors can also be used for CIN. Always consult the manufacturer if there is any question. The benefit of the LTC3859 2-phase operation can be calculated by using Equation (1) for the higher power controller and then calculating the loss that would have resulted if both controller channels switched on at the same time. 3859f 23 LTC3859 APPLICATIONS INFORMATION The total RMS power lost is lower when both controllers are operating due to the reduced overlap of current pulses required through the input capacitor’s ESR. This is why the input capacitor’s requirement calculated above for the worst-case controller is adequate for the dual controller design. Also, the input protection fuse resistance, battery resistance, and PC board trace resistance losses are also reduced due to the reduced peak currents in a 2-phase system. The overall benefit of a multiphase design will only be fully realized when the source impedance of the power supply/battery is included in the efficiency testing. The drains of the top MOSFETs should be placed within 1cm of each other and share a common CIN (s). Separating the drains and CIN may produce undesirable voltage and current resonances at VIN. A small (0.1μF to 1μF) bypass capacitor between the chip VIN pin and ground, placed close to the LTC3859, is also suggested. A small (1Ω to 10Ω) resistor placed between CIN (C1) and the VIN pin provides further isolation between the two channels. The selection of COUT is driven by the effective series resistance (ESR). Typically, once the ESR requirement is satisfied, the capacitance is adequate for filtering. The output ripple (ΔVOUT) is approximated by: ⎛ 1⎞ ΔVOUT ≈ ΔIL ⎜ ESR + 8fCOUT ⎟ ⎝ ⎠ where f is the operating frequency, COUT is the output capacitance and ΔIL is the ripple current in the inductor. The output ripple is highest at maximum input voltage since ΔIL increases with input voltage. Setting Output Voltage The LTC3859 output voltages are each set by an external feedback resistor divider carefully placed across the output, as shown in Figure 5. The regulated output voltages are determined by: ⎛ R⎞ VOUT, BUCK = 0.8V ⎜ 1 + B ⎟ ⎝ RA ⎠ ⎛ R⎞ VOUT, BOOST = 1.2V ⎜ 1 + B ⎟ ⎝ RA ⎠ VOUT RB CFF 1/3 LTC3859 VFB 3859 F05 RA Figure 5. Setting Output Voltage To improve the frequency response, a feedforward capacitor, CFF, may be used. Great care should be taken to route the VFB line away from noise sources, such as the inductor or the SW line. Tracking and Soft-Start (TRACK/SS1, TRACK/SS2, SS3 Pins) The start-up of each VOUT is controlled by the voltage on the respective TRACK/SS pin (TRACK/SS1 for channel 1, TRACK/SS2 for channel 2, SS3 for channel 3). When the voltage on the TRACK/SS pin is less than the internal 0.8V reference (1.2V reference for the boost channel), the LTC3859 regulates the VFB pin voltage to the voltage on the TRACK/SS pin instead of the internal reference. Likewise, the TRACK/SS pin for the buck channels can be used to program an external soft-start function or to allow VOUT to track another supply during start-up. 1/3 LTC3859 TRACK/SS CSS SGND 3859 F06 Figure 6. Using the TRACK/SS Pin to Program Soft-Start Soft-start is enabled by simply connecting a capacitor from the TRACK/SS pin to ground, as shown in Figure 6. An internal 1μA current source charges the capacitor, providing a linear ramping voltage at the TRACK/SS pin. The LTC3859 will regulate the VFB pin (and hence VOUT) according to the voltage on the TRACK/SS pin, allowing VOUT to rise smoothly from 0V to its final regulated value. The total soft-start time will be approximately: 0.8V t SS _ BUCK = CSS • 1µA 1.2V t SS _ BOOST = CSS • 1µA 3859f 24 LTC3859 APPLICATIONS INFORMATION VX(MASTER) OUTPUT (VOUT) OUTPUT (VOUT) VX(MASTER) VOUT(SLAVE) VOUT(SLAVE) TIME 3859 F07a TIME 3859 F07b 7a. Coincident Tracking 7b. Radiometric Tracking Figure 7. Two Different Modes of Output Voltage Tracking VOUT LTC3859 VFB1,2 VX RA RB RTRACKB TRACK/SS1,2 RTRACKA 3859 F08 Figure 8. Using the TRACK/SS Pin for Tracking Alternatively, the TRACK/SS1 and TRACK/SS2 pins for the two buck controllers can be used to track two (or more) supplies during start-up, as shown qualitatively in Figures 7a and 7b. To do this, a resistor divider should be connected from the master supply (VX) to the TRACK/SS pin of the slave supply (VOUT), as shown in Figure 8. During start-up VOUT will track VX according to the ratio set by the resistor divider: R + R TRACKB VX RA = • TRACKA VOUT R TRACKA R A + RB For coincident tracking (VOUT = VX during start-up), RA = RTRACKA RB = RTRACKB INTVCC Regulators The LTC3859 features two separate internal P-channel low dropout linear regulators (LDO) that supply power at the INTVCC pin from either the VBIAS supply pin or the EXTVCC pin depending on the connection of the EXTVCC pin. INTVCC powers the gate drivers and much of the LTC3859’s internal circuitry. The VBIAS LDO and the EXTVCC LDO regulate INTVCC to 5.4V. Each of these can supply a peak current of 50mA and must be bypassed to ground with a minimum of 4.7μF ceramic capacitor. No matter what type of bulk capacitor is used, an additional 1μF ceramic capacitor placed directly adjacent to the INTVCC and PGND IC pins is highly recommended. Good bypassing is needed to supply the high transient currents required by the MOSFET gate drivers and to prevent interaction between the channels. High input voltage applications in which large MOSFETs are being driven at high frequencies may cause the maximum junction temperature rating for the LTC3859 to be exceeded. The INTVCC current, which is dominated by the gate charge current, may be supplied by either the VBIAS LDO or the EXTVCC LDO. When the voltage on the EXTVCC pin is less than 4.7V, the VBIAS LDO is enabled. Power dissipation for the IC in this case is highest and is equal to VBIAS • IINTVCC. The gate charge current is dependent on operating frequency as discussed in the Efficiency Considerations section. The junction temperature can be estimated by using the equations given in Note 3 of the Electrical Characteristics. For example, the LTC3859 INTVCC current is limited to less than 40mA from a 40V supply when not using the EXTVCC supply at a 70°C ambient temperature in the QFN package: TJ = 70°C + (40mA)(40V)(34°C/W) = 125°C 3859f 25 LTC3859 APPLICATIONS INFORMATION To prevent the maximum junction temperature from being exceeded, the input supply current must be checked while operating in continuous conduction mode (PLLIN/MODE = INTVCC) at maximum VIN. When the voltage applied to EXTVCC rises above 4.7V, the VBIAS LDO is turned off and the EXTVCC LDO is enabled. The EXTVCC LDO remains on as long as the voltage applied to EXTVCC remains above 4.5V. The EXTVCC LDO attempts to regulate the INTVCC voltage to 5.4V, so while EXTVCC is less than 5.4V, the LDO is in dropout and the INTVCC voltage is approximately equal to EXTVCC. When EXTVCC is greater than 5.4V, up to an absolute maximum of 14V, INTVCC is regulated to 5.4V. Using the EXTVCC LDO allows the MOSFET driver and control power to be derived from one of the LTC3859’s switching regulator outputs (4.7V ≤ VOUT ≤ 14V) during normal operation and from the VBIAS LDO when the output is out of regulation (e.g., startup, short-circuit). If more current is required through the EXTVCC LDO than is specified, an external Schottky diode can be added between the EXTVCC and INTVCC pins. In this case, do not apply more than 6V to the EXTVCC pin and make sure than EXTVCC ≤ VBIAS. Significant efficiency and thermal gains can be realized by powering INTVCC from the buck output, since the VIN current resulting from the driver and control currents will be scaled by a factor of (Duty Cycle)/(Switcher Efficiency). For 5V to 14V regulator outputs, this means connecting the EXTVCC pin directly to VOUT. Tying the EXTVCC pin to a 8.5V supply reduces the junction temperature in the previous example from 125°C to: TJ = 70°C + (40mA)(8.5V)(34°C/W) = 82°C However, for 3.3V and other low voltage outputs, additional circuitry is required to derive INTVCC power from the output. The following list summarizes the four possible connections for EXTVCC: 1. EXTVCC left open (or grounded). This will cause INTVCC to be powered from the internal 5.4V regulator resulting in an efficiency penalty of up to 10% at high input voltages. 2. EXTVCC connected directly to the output voltage of one of the buck regulators. This is the normal connection for a 5V to 14V regulator and provides the highest efficiency. 3. EXTVCC connected to an external supply. If an external supply is available in the 5V to 14V range, it may be used to power EXTVCC providing it is compatible with the MOSFET gate drive requirements. Ensure that EXTVCC < VIN. 4. EXTVCC connected to an output-derived boost network off one of the buck regulators. For 3.3V and other low voltage buck regulators, efficiency gains can still be realized by connecting EXTVCC to an output-derived voltage that has been boosted to greater than 4.7V. This can be done with the capacitive charge pump shown in Figure 9. Ensure that EXTVCC < VIN. VIN1,2 LTC3859 C1 BAT85 BAT85 MTOP TG EXTVCC SW MBOT BG PGND 3859 F09 BAT85 L RSENSE VOUT1,2 Figure 9. Capacitive Charge Pump for EXTVCC Topside MOSFET Driver Supply (CB, DB) External bootstrap capacitors CB connected to the BOOST pins supply the gate drive voltages for the topside MOSFETs. Capacitor CB in the Functional Diagram is charged though external diode DB from INTVCC when the SW pin is low. When one of the topside MOSFETs is to be turned on, the driver places the CB voltage across the gate-source of the desired MOSFET. This enhances the MOSFET and turns on the topside switch. The switch node voltage, SW, rises to VIN for the buck channels (VOUT for the boost channel) and the BOOST pin follows. With the topside MOSFET 3859f 26 LTC3859 APPLICATIONS INFORMATION on, the boost voltage is above the input supply: VBOOST = VIN + VINTVCC (VBOOST = VOUT + VINTVCC for the boost controller). The value of the boost capacitor CB needs to be 100 times that of the total input capacitance of the topside MOSFET(s). The reverse breakdown of the external Schottky diode must be greater than VIN(MAX) for the buck channels and VOUT(MAX) for the boost channel. When adjusting the gate drive level, the final arbiter is the total input current for the regulator. If a change is made and the input current decreases, then the efficiency has improved. If there is no change in input current, then there is no change in efficiency. The topside MOSFET driver for the boost channel includes an internal charge pump that delivers current to the bootstrap capacitor from the BOOST3 pin. This charge current maintains the bias voltage required to keep the top MOSFET on continuously during dropout/overvoltage conditions. The Schottky diode selected for the boost topside driver should have a reverse leakage less than the available output current the charge pump can supply under all operating conditions. Curves displaying the available charge pump current under different operating conditions can be found in the Typical Performance Characteristics section. Fault Conditions: Buck Current Limit and Current Foldback The LTC3859 includes current foldback for the buck channels to help limit load current when the output is shorted to ground. If the buck output falls below 70% of its nominal output level, then the maximum sense voltage is progressively lowered from 100% to 40% of its maximum selected value. Under short-circuit conditions with very low duty cycles, the buck channel will begin cycle skipping in order to limit the short-circuit current. In this situation the bottom MOSFET will be dissipating most of the power but less than in normal operation. The short-circuit ripple current is determined by the minimum on-time tON(MIN) of the LTC3859 (≈95ns), the input voltage and inductor value: ΔIL(SC) = tON(MIN) (VIN/L) The resulting average short-circuit current is: 1 ISC = 40% •ILIM(MAX) − ΔIL(SC) 2 Fault Conditions: Buck Overvoltage Protection (Crowbar) The overvoltage crowbar is designed to blow a system input fuse when the output voltage of the one of the buck regulators rises much higher than nominal levels. The crowbar causes huge currents to flow, that blow the fuse to protect against a shorted top MOSFET if the short occurs while the controller is operating. A comparator monitors the buck output for overvoltage conditions. The comparator detects faults greater than 10% above the nominal output voltage. When this condition is sensed, the top MOSFET of the buck controller is turned off and the bottom MOSFET is turned on until the overvoltage condition is cleared. The bottom MOSFET remains on continuously for as long as the overvoltage condition persists; if VOUT returns to a safe level, normal operation automatically resumes. A shorted top MOSFET for the buck channel will result in a high current condition which will open the system fuse. The switching regulator will regulate properly with a leaky top MOSFET by altering the duty cycle to accommodate the leakage. Fault Conditions: Over Temperature Protection At higher temperatures, or in cases where the internal power dissipation causes excessive self heating on chip (such as INTVCC short to ground), the over temperature shutdown circuitry will shut down the LTC3859. When the junction temperature exceeds approximately 170°C, the over temperature circuitry disables the INTVCC LDO, causing the INTVCC supply to collapse and effectively shutting down the entire LTC3859 chip. Once the junction temperature drops back to approximately 155°C, the INTVCC LDO turns back on. Long term overstress (TJ > 125°C) should be avoided as it can degrade the performance or shorten the life of the part. Phase-Locked Loop and Frequency Synchronization The LTC3859 has an internal phase-locked loop (PLL) comprised of a phase frequency detector, a lowpass filter, and a voltage-controlled oscillator (VCO). This allows the turn-on of the top MOSFET of controller 1 to be locked to the rising edge of an external clock signal applied to the 3859f 27 LTC3859 APPLICATIONS INFORMATION 1000 900 800 FREQUENCY (kHz) 700 600 500 400 300 200 100 0 15 25 35 45 55 65 75 85 95 105 115 125 FREQ PIN RESISTOR (kΩ) 3859 F10 at a frequency correspond to the frequency set by the FREQ pin. Once prebiased, the PLL only needs to adjust the frequency slightly to achieve phase-lock and synchronization. Although it is not required that the free-running frequency be near external clock frequency, doing so will prevent the operating frequency from passing through a large range of frequencies as the PLL locks. Table 1 summarizes the different states in which the FREQ pin can be used. Table 1 FREQ PIN 0V INTVCC Resistor to SGND Any of the Above PLLIN/MODE PIN DC Voltage DC Voltage DC Voltage External Clock FREQUENCY 350kHz 535kHz 50kHz to 900kHz Phase-Locked to External Clock Figure 10. Relationship Between Oscillator Frequency and Resistor Value at the FREQ Pin PLLIN/MODE pin. The turn-on of controller 2’s top MOSFET is thus 180 degrees out of phase with the external clock. The phase detector is an edge sensitive digital type that provides zero degrees phase shift between the external and internal oscillators. This type of phase detector does not exhibit false lock to harmonics of the external clock. If the external clock frequency is greater than the internal oscillator’s frequency, fOSC, then current is sourced continuously from the phase detector output, pulling up the VCO input. When the external clock frequency is less than fOSC, current is sunk continuously, pulling down the VCO input. If the external and internal frequencies are the same but exhibit a phase difference, the current sources turn on for an amount of time corresponding to the phase difference. The voltage at the VCO input is adjusted until the phase and frequency of the internal and external oscillators are identical. At the stable operating point, the phase detector output is high impedance and the internal filter capacitor, CLP holds the voltage at the VCO input. , Note that the LTC3859 can only be synchronized to an external clock whose frequency is within range of the LTC3859’s internal VCO, which is nominally 55kHz to 1MHz. This is guaranteed to be between 75kHz and 850kHz. Typically, the external clock (on PLLIN/MODE pin) input high threshold is 1.6V, while the input low threshold is 1.2V. Rapid phase-locking can be achieved by using the FREQ pin to set a free-running frequency near the desired synchronization frequency. The VCO’s input voltage is prebiased Minimum On-Time Considerations Minimum on-time tON(MIN) is the smallest time duration that the LTC3859 is capable of turning on the top MOSFET (bottom MOSFET for the boost controller). It is determined by internal timing delays and the gate charge required to turn on the top MOSFET. Low duty cycle applications may approach this minimum on-time limit and care should be taken to ensure that V tON(MIN)_ BUCK < OUT VIN (f) V −V tON(MIN)_ BOOST < OUT IN VOUT (f) If the duty cycle falls below what can be accommodated by the minimum on-time, the controller will begin to skip cycles. The output voltage will continue to be regulated, but the ripple voltage and current will increase. The minimum on-time for the LTC3859 is approximately 95ns for the bucks and 120ns for the boost. However, as the peak sense voltage decreases the minimum on-time gradually increases up to about 130ns. This is of particular concern in forced continuous applications with low ripple current at light loads. If the duty cycle drops below the minimum on-time limit in this situation, a significant amount of cycle skipping can occur with correspondingly larger current and voltage ripple. 3859f 28 LTC3859 APPLICATIONS INFORMATION Efficiency Considerations The percent efficiency of a switching regulator is equal to the output power divided by the input power times 100%. It is often useful to analyze individual losses to determine what is limiting the efficiency and which change would produce the most improvement. Percent efficiency can be expressed as: %Efficiency = 100% – (L1 + L2 + L3 + ...) where L1, L2, etc. are the individual losses as a percentage of input power. Although all dissipative elements in the circuit produce losses, four main sources usually account for most of the losses in LTC3859 circuits: 1) IC VIN current, 2) INTVCC regulator current, 3) I2R losses, 4) Topside MOSFET transition losses. 1. The VIN current is the DC supply current given in the Electrical Characteristics table, which excludes MOSFET driver and control currents. VIN current typically results in a small (1μF) supply bypass capacitors. The discharged bypass capacitors are effectively put in parallel with COUT, causing a rapid drop in VOUT. No regulator can alter its delivery of current quickly enough to prevent this sudden step change in output voltage if the load switch resistance is low and it is driven quickly. If the ratio of CLOAD to COUT is greater than 1:50, the switch rise time should be controlled so that the load rise time is limited to approximately 25 • CLOAD. Thus a 10μF capacitor would require a 250μs rise time, limiting the charging current to about 200mA. Buck Design Example As a design example for one of the buck channels channel, assume VIN = 12V(NOMINAL), VIN = 22V(MAX), VOUT = 3.3V, IMAX = 6A, VSENSE(MAX) = 50mV, and f = 350kHz. The inductance value is chosen first based on a 30% ripple current assumption. The highest value of ripple current occurs at the maximum input voltage. Tie the FREQ pin to GND, generating 350kHz operation. The minimum inductance for 30% ripple current is: ΔIL = ⎞ VOUT ⎛ VOUT ⎜ 1− V ⎟ (f)(L) ⎝ IN(NOMINAL ) ⎠ A 3.9μH inductor will produce 29% ripple current. The peak inductor current will be the maximum DC value plus one half the ripple current, or 6.88A. Increasing the ripple current will also help ensure that the minimum on-time of 95ns is not violated. The minimum on-time occurs at maximum VIN: VOUT 3.3V tON(MIN) = = = 429ns VIN(MAX)(f) 22V(350kHz) 3859f 30 LTC3859 APPLICATIONS INFORMATION The RSENSE resistor value can be calculated by using the minimum value for the maximum current sense threshold (43mV): RSENSE ≤ 43mV = 0.006Ω 6.88A PC Board Layout Checklist When laying out the printed circuit board, the following checklist should be used to ensure proper operation of the IC. These items are also illustrated graphically in the layout diagram of Figure 11. Figure 12 illustrates the current waveforms present in the various branches of the 2-phase synchronous buck regulators operating in the continuous mode. Check the following in your layout: 1. Are the top N-channel MOSFETs MTOP1 and MTOP2 located within 1cm of each other with a common drain connection at CIN? Do not attempt to split the input decoupling for the two channels as it can cause a large resonant loop. 2. Are the signal and power grounds kept separate? The combined IC signal ground pin and the ground return of CINTVCC must return to the combined COUT (–) terminals. The path formed by the top N-channel MOSFET, Schottky diode and the CIN capacitor should have short leads and PC trace lengths. The output capacitor (–) terminals should be connected as close as possible to the (–) terminals of the input capacitor by placing the capacitors next to each other and away from the Schottky loop described above. 3. Do the LTC3859 VFB pins’ resistive dividers connect to the (+) terminals of COUT? The resistive divider must be connected between the (+) terminal of COUT and signal ground. The feedback resistor connections should not be along the high current input feeds from the input capacitor(s). 4. Are the SENSE– and SENSE+ leads routed together with minimum PC trace spacing? The filter capacitor between SENSE+ and SENSE– should be as close as possible to the IC. Ensure accurate current sensing with Kelvin connections at the sense resistor. 5. Is the INTVCC decoupling capacitor connected close to the IC, between the INTVCC and the power ground pins? This capacitor carries the MOSFET drivers’ current peaks. An additional 1μF ceramic capacitor placed immediately next to the INTVCC and PGND pins can help improve noise performance substantially. Choosing 1% resistors: RA = 25k and RB = 80.6k yields an output voltage of 3.33V. The power dissipation on the top side MOSFET can be easily estimated. Choosing a Fairchild FDS6982S dual MOSFET . results in: RDS(ON) = 0.035Ω/0.022Ω, CMILLER = 215pF At maximum input voltage with T(estimated) = 50°C: 3.3V PMAIN = (6A)2 {1+ (0.005)(50° C − 25° C)} 22V 5A (0.035Ω) + (22V)2 6 (2.5Ω)(215pF) • 2 1 1⎫ ⎧ + ⎨ ⎬ (350kHz) = 433mW ⎩ 5V − 2.3V 2.3V ⎭ A short-circuit to ground will result in a folded back current of: 20 mV 1 ⎧ 95ns(22V) ⎫ ISC = −⎨ ⎬ = 3.07A 0.006Ω 2 ⎩ 3.9µH ⎭ with a typical value of RDS(ON) and ζ = (0.005/°C)(25°C) = 0.125. The resulting power dissipated in the bottom MOSFET is: PSYNC = (2.23A)2 (1.125)(0.022Ω) = 233mW which is less than under full-load conditions. The input capacitor to the buck regulator CIN is chosen for an RMS current rating of at least 3A at temperature assuming only this channel is on. COUT is chosen with an ESR of 0.02Ω for low output ripple. The output ripple in continuous mode will be highest at the maximum input voltage. The output voltage ripple due to ESR is approximately: VORIPPLE = RESR (ΔIL) = 0.02Ω(1.75A) = 35mVP-P 3859f 31 LTC3859 APPLICATIONS INFORMATION 6. Keep the switching nodes (SW1, SW2, SW3), top gate nodes (TG1, TG2, TG3), and boost nodes (BOOST1, BOOST2, BOOST3) away from sensitive small-signal nodes, especially from the opposites channel’s voltage and current sensing feedback pins. All of these nodes have very large and fast moving signals and therefore should be kept on the output side of the LTC3859 and occupy minimum PC trace area. 7. Use a modified star ground technique: a low impedance, large copper area central grounding point on the same side of the PC board as the input and output capacitors with tie-ins for the bottom of the INTVCC decoupling capacitor, the bottom of the voltage feedback resistive divider and the SGND pin of the IC. PC Board Layout Debugging Start with one controller on at a time. It is helpful to use a DC-50MHz current probe to monitor the current in the inductor while testing the circuit. Monitor the output switching node (SW pin) to synchronize the oscilloscope to the internal oscillator and probe the actual output voltage as well. Check for proper performance over the operating voltage and current range expected in the application. The frequency of operation should be maintained over the input voltage range down to dropout and until the output load drops below the low current operation threshold—typically 25% of the maximum designed current level in Burst Mode operation. The duty cycle percentage should be maintained from cycle to cycle in a well-designed, low noise PCB implementation. Variation in the duty cycle at a subharmonic rate can suggest noise pickup at the current or voltage sensing inputs or inadequate loop compensation. Overcompensation of the loop can be used to tame a poor PC layout if regulator bandwidth optimization is not required. Only after each controller is checked for its individual performance should both controllers be turned on at the same time. A particularly difficult region of operation is when one controller channel is nearing its current comparator trip point when the other channel is turning on its top MOSFET. This occurs around 50% duty cycle on either channel due to the phasing of the internal clocks and may cause minor duty cycle jitter. Reduce VIN from its nominal level to verify operation of the regulator in dropout. Check the operation of the undervoltage lockout circuit by further lowering VIN while monitoring the outputs to verify operation. Investigate whether any problems exist only at higher output currents or only at higher input voltages. If problems coincide with high input voltages and low output currents, look for capacitive coupling between the BOOST, SW, TG, and possibly BG connections and the sensitive voltage and current pins. The capacitor placed across the current sensing pins needs to be placed immediately adjacent to the pins of the IC. This capacitor helps to minimize the effects of differential noise injection due to high frequency capacitive coupling. If problems are encountered with high current output loading at lower input voltages, look for inductive coupling between CIN, Schottky and the top MOSFET components to the sensitive current and voltage sensing traces. In addition, investigate common ground path voltage pickup between these components and the SGND pin of the IC. An embarrassing problem, which can be missed in an otherwise properly working switching regulator, results when the current sensing leads are hooked up backwards. The output voltage under this improper hookup will still be maintained but the advantages of current mode control will not be realized. Compensation of the voltage loop will be much more sensitive to component selection. This behavior can be investigated by temporarily shorting out the current sensing resistor—don’t worry, the regulator will still maintain control of the output voltage. 3859f 32 LTC3859 APPLICATIONS INFORMATION SW1 L1 RSENSE1 VOUT1 D1 COUT1 RL1 VIN RIN CIN SW2 L2 RSENSE2 VOUT2 BOLD LINES INDICATE HIGH SWITCHING CURRENT. KEEP LINES TO A MINIMUM LENGTH. D2 COUT2 RL2 3859 F11 Figure 11. Branch Current Waveforms for Bucks 3859f 33 LTC3859 TYPICAL APPLICATIONS VOUT1 RA1 68.1k CITH1A 100pF CITH1 1500pF RITH1 15k ITH1 CSS1 0.1μF TRACK/SS1 FREQ PLLIN/MODE SGND RUN1 VOUT2 RA2 68.1k CITH2 2.2nF CITH2A 68pF CSS2 0.1μF VOUT3 RA3 68.1k CITH3 0.01μF CITH3A 820pF CSS3 0.1μF OPT RB3 499k VFB3 RITH3 3.6k ITH3 SENSE2– D3 SS3 TG3 SW3 MTOP1, MTOP2: BSZ097NO4LS MBOT1, MBOT2: BSZ097NO4LS MTOP3: BSC027NO4LS MBOT3: BSCO1BN04LS L1: WÜRTH 744314490 L2: WÜRTH 744314650 L3: WÜRTH 744325120 COUT1: SANYO 6TPB220ML COUT2: SANYO 10TPC68M CIN, COUT3: SANYO 50CE220LX D1, D2: CMDH-4E D3: BAS140W BOOST3 BG3 SENSE3– C3 1nF SENSE3+ 3859 F12 OPT RB1 357k VFB1 LTC3859 SENSE1– C1 1nF SENSE1+ 100k PGOOD1 TG1 SW1 BOOST1 BG1 D1 VBIAS CBIAS 10μF PGND EXTVCC CINT1 1μF CINT2 4.7μF C2 10μF CB1 0.1μF MBOT1 MTOP1 C1 10μF L1 4.9μH RSENSE1 6mΩ VOUT1 5V 5A COUT1 220μF RUN2 10pF RB2 649k RITH2 15k ITH2 INTVCC D2 TG2 TRACK/SS2 BOOST2 SW2 BG2 RUN3 VFB2 CB2 0.1μF MTOP2 L2 6.5μH RSENSE2 8mΩ VOUT2 8.5V 3A COUT2 68μF MBOT2 SENSE2+ C2 1nF VOUT3 10V* MTOP3 CB3 0.1μF MBOT3 L3 1.2μH RSENSE2 2mΩ COUT3 220μF VIN 2.5V TO 38V (START-UP ABOVE 5V) CIN 220μF * VOUT3 IS 10V WHEN VIN < 10V, FOLLOWS VIN WHEN VIN > 10V Figure 12. High Efficiency Wide Input Range Dual 5V/8.5V Converter 3859f 34 LTC3859 TYPICAL APPLICATIONS VOUT1 RA1 34k CITH1A 100pF CITH1 680pF RITH1 10k CSS1 0.1μF ITH1 SENSE1+ 100k PGOOD1 TG1 TRACK/SS1 FREQ PLLIN/MODE SGND RUN1 VOUT2 RA2 68.1k CITH2 820pF CITH2A 150pF CSS2 0.1μF VOUT3 RA3 68.1k CITH3 0.01μF CITH3A 820pF CSS3 0.1μF OPT RB3 787k VFB3 RITH3 3.6k ITH3 SENSE2– D3 SS3 TG3 SW3 MTOP1, MTOP2: VISHAY Si7848DP MBOT1, MBOT2: VISHAY Si7848DP MTOP3: BSC027NO4LS MBOT3: BSCO1BN04LS L1: SUMIDA CDEP105-8R8M L2: SUMIDA CDEP105-3R2M L3: WÜRTH 744325120 COUT1: KEMET T525D476MO16E035 COUT2: SANYO 4TPE150M CIN, COUT3: SANYO 50CE220LX D1, D2: CMDH-4E D3: BAS140W BOOST3 BG3 SENSE3– C3 1nF SENSE3+ 3859 F13 33pF RB1 475k VFB1 LTC3859 SENSE1– C1 1nF C1 10μF MTOP1 CB1 0.1μF MBOT1 D1 L1 8.8μH RSENSE1 9mΩ SW1 BOOST1 BG1 VOUT1 12V 3A COUT1 47μF VBIAS CBIAS 10μF PGND EXTVCC CINT1 1μF CINT2 4.7μF C2 10μF RUN2 15pF RB2 215k RITH2 15k ITH2 INTVCC D2 TG2 TRACK/SS2 BOOST2 SW2 BG2 RUN3 VFB2 CB2 0.1μF MTOP2 L2 3.2μH RSENSE2 6mΩ VOUT2 3.3V 5A COUT2 150μF MBOT2 SENSE2+ C2 1nF VOUT3 15V* MTOP3 CB3 0.1μF MBOT3 L3 1.2μH RSENSE2 2mΩ COUT3 220μF VIN 2.5V TO 38V (START-UP ABOVE 5V) CIN 220μF * VOUT3 IS 15V WHEN VIN < 15V, FOLLOWS VIN WHEN VIN > 15V Figure 13. High Efficiency Wide Input Range Dual 12V/3.3V Converter 3859f 35 LTC3859 TYPICAL APPLICATIONS VOUT1 RA1 115k 56pF CITH1A 200pF CITH1 1000pF CSS1 0.01μF RITH1 3.93k ITH1 RB1 28.7k VFB1 LTC3859 SENSE1– C1 1nF SENSE1+ 100k PGOOD1 TG1 TRACK/SS1 FREQ PLLIN/MODE SGND RUN1 VOUT2 RA2 115k CITH2 1000pF CITH2A 200pF CSS2 0.01μF VOUT3 RA3 12.1k CITH3 15nF CITH3A 220pF CSS3 0.01μF OPT RB3 232k VFB3 RITH3 8.66k ITH3 SENSE2– D3 SS3 TG3 SW3 MTOP1, MTOP2: RENESAS RJK0305 MBOT1, MBOT2: RENESAS RJK0328 MTOP3, MBOT3: RENESAS HAT2169H L1, L2: SUMIDA CDEP105-0R4 L3: PULSE PA1494.362NL COUT1, COUT2: SANYO 2R5TPE220M CIN, COUT3: SANYO 50CE220AX D1, D2: CMDH-4E D3: BAS140W BOOST3 BG3 SENSE3 – C1 10μF MTOP1 CB1 0.1μF MBOT1 D1 L1 0.47μH RSENSE1 3.5mΩ SW1 BOOST1 BG1 VOUT1 1V 8A COUT1 220μF 2 VBIAS CBIAS 10μF PGND EXTVCC CINT1 1μF CINT2 4.7μF C2 10μF RUN2 56pF RB2 57.6k RITH2 3.93k ITH2 INTVCC D2 TG2 TRACK/SS2 BOOST2 SW2 BG2 RUN3 VFB2 CB2 0.1μF MTOP2 L2 0.47μH RSENSE2 3.5mΩ VOUT2 1.2V 8A COUT2 220μF 2 MBOT2 SENSE2+ C2 1nF VOUT3 24V 5A MTOP3 CB3 0.1μF MBOT3 L3 3.3μH RSENSE2 4mΩ COUT3 220μF VIN 12V CIN 220μF C3 1nF SENSE3+ 3859 F14 Figure 14. High Efficiency Triple 24V/1V/1.2V Converter from 12V VIN 3859f 36 LTC3859 TYPICAL APPLICATIONS VOUT1 RA1 115k CITH1A 100pF CITH1 2.2nF CSS1 0.1μF TRACK/SS1 FREQ PLLIN/MODE SGND RUN1 VOUT2 RA2 115k CITH2 3.3nF CITH2A 100pF CSS2 0.1μF VOUT3 RA3 115k CITH3 100nF CITH3A 10pF CSS3 0.1μF RITH3 13k ITH3 SENSE2– RB3 887k VFB3 SENSE2+ C2 1nF D3 COUT3 270μF RSENSE2 9mΩ L3 10μH VOUT3 10.5V 1.2A RITH2 9.1k ITH2 INTVCC D2 TG2 TRACK/SS2 BOOST2 SW2 BG2 MBOT2 CB2 0.1μF MTOP2 L2 6.5μH RSENSE2 9mΩ RB2 357k RUN2 RUN3 VFB2 PGND EXTVCC CINT1 1μF CINT2 4.7μF C2 10μF VBIAS CBIAS 10μF RITH1 5.6k ITH1 RB1 57.6k VFB1 LTC3859 SENSE1– C1 1nF SENSE1+ 100k PGOOD1 TG1 SW1 BOOST1 BG1 D1 CB1 0.1μF MBOT1 MTOP1 C1 10μF L1 2.2μH RSENSE1 9mΩ VOUT1 1.2V 3A COUT1 220μF VOUT2 3.3V 3A COUT2 220μF SS3 TG3 SW3 C3 10μF 50V MBOT3 • • MTOP1, MTOP2: BSZ097NO4LS MBOT1, MBOT2: BSZ097NO4LS MBOT3: BSZ097NO4L L1: WURTH 744311220 L2: WURTH 744314650 L3: COOPER BUSSMANN DRQ125-100 COUT1: SANYO 2R5TPE220MAFB COUT2: SANYO 4TPE220MAZB COUT3: SANYO SVPC270M CIN: SANYO 50CE220LX D1, D2: CMDH-4E D3: DIODES INC B360A-13-F BOOST3 BG3 SENSE3– C3 1nF SENSE3+ 3859 F15 CIN 220μF VIN 5.8V TO 34V Figure 15. High Efficiency 1.2V/3.3V Step-Down Converter with 10.5V SEPIC Converter 3859f 37 LTC3859 PACKAGE DESCRIPTION FE Package 38-Lead Plastic TSSOP (4.4mm) (Reference LTC DWG # 05-08-1772 Rev A) Exposed Pad Variation AA 4.75 REF 38 6.60 ±0.10 4.50 REF 2.74 REF SEE NOTE 4 9.60 – 9.80* (.378 – .386) 4.75 REF (.187) 20 0.315 ±0.05 1.05 ±0.10 0.50 BSC RECOMMENDED SOLDER PAD LAYOUT 6.40 2.74 REF (.252) (.108) BSC 1 0.25 REF 19 1.20 (.047) MAX 4.30 – 4.50* (.169 – .177) 0 –8 0.09 – 0.20 (.0035 – .0079) 0.50 – 0.75 (.020 – .030) 0.50 (.0196) BSC NOTE: 1. CONTROLLING DIMENSION: MILLIMETERS 2. DIMENSIONS ARE IN MILLIMETERS (INCHES) 3. DRAWING NOT TO SCALE 0.17 – 0.27 (.0067 – .0106) TYP 0.05 – 0.15 (.002 – .006) FE38 (AA) TSSOP 0608 REV A 4. RECOMMENDED MINIMUM PCB METAL SIZE FOR EXPOSED PAD ATTACHMENT *DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.150mm (.006") PER SIDE 3859f 38 LTC3859 PACKAGE DESCRIPTION UHF Package 38-Lead Plastic QFN (5mm × 7mm) (Reference LTC DWG # 05-08-1701 Rev C) 0.70 0.05 5.50 0.05 4.10 0.05 3.00 REF 5.15 ± 0.05 3.15 ± 0.05 PACKAGE OUTLINE 0.25 0.05 0.50 BSC 5.5 REF 6.10 7.50 0.05 0.05 RECOMMENDED SOLDER PAD LAYOUT APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED PIN 1 NOTCH R = 0.30 TYP OR 0.35 45 CHAMFER 37 38 0.40 0.10 PIN 1 TOP MARK (SEE NOTE 6) 1 2 5.00 0.10 0.75 0.05 0.00 – 0.05 3.00 REF 5.15 ± 0.10 7.00 0.10 5.50 REF 3.15 ± 0.10 (UH) QFN REF C 1107 0.200 REF 0.25 0.05 0.50 BSC R = 0.125 TYP R = 0.10 TYP BOTTOM VIEW—EXPOSED PAD NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE M0-220 VARIATION WHKD 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.20mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE 3859f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 39 LTC3859 TYPICAL APPLICATION High Efficiency Wide Input Range Dual 3.3V/8.5V Converter VOUT1 RA1 68.1k 15pF RB1 215k VFB1 CITH1A 150pF CITH1 820pF RITH1 15k CSS1 0.1μF ITH1 SENSE1+ 100k PGOOD1 TG1 TRACK/SS1 FREQ PLLIN/MODE SGND RUN1 VOUT2 RA2 68.1k CITH2 2.2nF CITH2A 68pF CSS2 0.1μF VOUT3 RA3 68.1k CITH3 0.01μF CITH3A 820pF CSS3 0.1μF MTOP1, MTOP2: VISHAY Si7848DP MBOT1, MBOT2: BSZ097NO4LS MTOP3: BSC027NO4LS MBOT3: BSCO1BN04LS L1: SUMIDA CDEP105-3R2M L2: WÜRTH 744314650 L3: WÜRTH 744325120 COUT1: SANYO 6TPB220ML COUT2: SANYO 4TPE150M CIN, COUT3: SANYO 50CE220LX D1, D2: CMDH-4E D3: BAS140W OPT RB3 499k VFB3 RITH3 3.6k ITH3 SENSE2– D3 SS3 TG3 SW3 BOOST3 BG3 SENSE3– C3 1nF SENSE3+ 3859 TA02 LTC3859 SENSE1– C1 1nF C1 10μF MTOP1 CB1 0.1μF MBOT1 L1 3.2μH RSENSE1 6mΩ SW1 BOOST1 BG1 D1 VBIAS VOUT1 3.3V 5A COUT1 150μF RUN2 10pF RB2 649k RITH2 15k ITH2 INTVCC D2 TG2 TRACK/SS2 BOOST2 SW2 BG2 RUN3 VFB2 PGND EXTVCC CBIAS 10μF CINT1 1μF CINT2 4.7μF C2 10μF CB2 0.1μF MTOP2 L2 6.5μH RSENSE2 8mΩ VOUT2 8.5V 3A COUT2 68μF MBOT2 SENSE2+ C2 1nF VOUT3 10V* MTOP3 CB3 0.1μF MBOT3 L3 1.2μH RSENSE2 2mΩ COUT3 220μF VIN 2.5V TO 38V (START-UP ABOVE 5V) CIN 220μF * VOUT3 IS 10V WHEN VIN < 10V, FOLLOWS VIN WHEN VIN > 10V RELATED PARTS PART NUMBER LTC3857/LTC3857-1 LTC3858/LTC3858-1 DESCRIPTION Low IQ, Dual Output 2-Phase Synchronous Step-Down DC/DC Controllers with 99% Duty Cycle COMMENTS Phase-Lockable Fixed Frequency 50kHz to 900kHz, 4V ≤ VIN ≤ 38V, 0.8V ≤ VOUT ≤ 24V, IQ = 50μA/170μA, LTC3890 LTC3780 60V, Low IQ, Dual 2-Phase Synchronous Step-Down DC/DC Controller 4-Switch High Efficiency Buck-Boost Controller Phase-Lockable Fixed Frequency 50kHz to 900kHz, 4V ≤ VIN ≤ 60V, 0.8V ≤ VOUT ≤ 24V, IQ = 50μA 4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ 30V, SSOP-24, 5mm × 5mm QFN-32 Phase-Lockable Fixed Frequency 140kHz to 650kHz, 4V ≤ VIN ≤ 36V, 0.8V ≤ VOUT ≤ 10V, IQ = 30μA/80μA Adjustable Fixed Frequency 100kHz to 500kHz, 4V ≤ VIN ≤ 60V, 1.23V ≤ VOUT ≤ 36V, IQ = 120μA, TSSOP-16 Selectable Fixed 200kHz to 600kHz Operating Frequency, 4V ≤ VIN ≤ 60V, 0.8V ≤ VOUT ≤ VIN , IQ = 40μA, MSOP-10E 3859f LT 0310 • PRINTED IN USA LTC3834/LTC3834-1/ Low IQ, Synchronous Step-Down DC/DC Controller with LTC3835/LTC3835-1 99% Duty Cycle LT3845 LTC3824 Low IQ, High Voltage Synchronous Step-Down DC/DC Controller Low IQ, High Voltage DC/DC Controller, 100% Duty Cycle 40 Linear Technology Corporation (408) 432-1900 ● FAX: (408) 434-0507 ● 1630 McCarthy Blvd., Milpitas, CA 95035-7417 www.linear.com © LINEAR TECHNOLOGY CORPORATION 2010
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