RH07

RH07 Operational Amplifier DESCRIPTIO ABSOLUTE AXI U RATI GS The RH07 is a precision op amp which provides very low offset voltage, low drift and low noise. In the design, processing and testing of the device, particular attention has been paid to the optimization of the entire distribution of several key parameters. The wafer lots are processed to LTC’s in-house Class S flow to yield circuits usable in stringent military applications. For complete electrical specifications, performance curves, application notes and applications circuits, see the OP-07 data sheet. Supply Voltage ..................................................... ± 22V Differential Input Voltage ...................................... ± 30V Input Voltage ........................................................ ± 22V Output Short-Circuit Duration (Note 3) ........... Indefinite Operating Temperature Range ............. – 55°C to 125°C Storage Temperature Range ................ – 65°C to 150°C Lead Temperature (Soldering, 10 sec)................. 300°C BUR -I CIRCUIT 10k PACKAGE/I FOR ATIO TOP VIEW VOS TRIM 8 VOS TRIM 1 – 7 V+ 6 OUT 20V 2 200Ω 3 10k – + 4 –20V 6 8 1 30pF RH07 BI +IN 3 4 V– H PACKAGE 8-LEAD TO-5 METAL CAN TOP VIEW VOS TRIM 1 – –IN 2 +IN 3 V– 4 J8 PACKAGE 8-LEAD CERAMIC DIP Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of circuits as described herein will not infringe on existing patent rights. + 7 –IN 2 5 NC 8 7 6 5 VOS TRIM V+ OUT NC U U WW W + W U U UU 1 RH07 TABLE 1: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) (Note 5) SYMBOL PARAMETER VOS ∆VOS ∆Temp ∆VOS ∆Time IOS ∆IOS ∆Temp IB ∆IB ∆Temp en Input Offset Voltage Avg Input Offset Voltage Drift: Without External Trim With External Trim Null Pot = 20kΩ Long-Term Input Offset Voltage Stability Input Offset Current Avg Input Bias Current Drift Input Bias Current Avg Input Bias Current Drift Input Noise Voltage Input Noise Voltage Density 0.1Hz to 10Hz fO = 10Hz fO = 100Hz fO = 1000Hz 0.1Hz to 10Hz fO = 10Hz fO = 100Hz fO = 1000Hz 3 3 4 3 3 3 3 3 3 3 3 VCM = ± 13V 20 200 ± 13.5 110 100 3 200 150 ± 12.5 ± 12.0 ± 10.5 3 3 0.1 0.4 120 6 1 1 1 1 4 ± 13.5 106 94 150 2,3 2,3 5,6 0.6 18 13 11 30 0.80 0.23 0.17 3 ±3 1 CONDITIONS NOTES 1 3 3 2,3 1 2.8 1 5.6 50 ±6 50 2,3 2,3 MIN TA = 25°C TYP MAX 75 SUB- –55°C ≤ TA ≤ 125°C SUBGROUP MIN TYP MAX GROUP 4 200 1.3 1.3 2,3 UNITS µV µV/°C µV/°C µV/Mo nA pA/°C nA pA/°C µVP-P nV/√Hz nV/√Hz nV/√Hz pAP-P pA/√Hz pA/√Hz pA/√Hz MΩ GΩ V dB dB V/mV V/mV in Input Noise Current Input Noise Current Density RIN Input Resistance: Differential Mode Common Mode Input Voltage Range Common-Mode Rejection Ratio Large-Signal Voltage Gain CMRR PSRR AVOL Power Supply Rejection Ratio VS = ± 3V to ± 18V RL ≥ 2k, VO = ± 10V RL ≥ 500Ω, VO = ± 0.5V VS = ± 3V RL ≥ 10k RL ≥ 2k RL ≥ 1k RL ≥ 2k AVCL = 1 VS = ± 15V VS = ± 3V VOUT Maximum Output Voltage Swing Slew Rate Closed-Loop Bandwidth Power Dissipation 4 4 4 ± 12.0 5,6 V/µs MHz mW mW SR GBW PD 2 RH07 TABLE 1A: ELECTRICAL CHARACTERISTICS 10KRAD(Si) (Post-Irradiation) (Note 6) UNITS µV nA nA V dB dB V/mV V V/µs mW 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) SYMBOL PARAMETER VOS IOS IB CMRR PSRR AVOL VOUT SR PD Input Offset Voltage Input Offset Current Input Bias Current Input Voltage Range Common-Mode Rejection Ratio Power Supply Rejection Ratio Maximum Output Voltage Swing Slew Rate Power Dissipation CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX 1 90 2.8 ±3 3 ± 13.5 110 100 200 ± 12.5 0.1 120 ± 13.5 110 100 200 ± 12.5 0.1 120 150 4 ± 10 ± 13.5 105 100 180 ± 12.5 0.1 120 200 8 ± 25 ± 13.5 100 95 150 ± 12.5 0.075 120 250 12 ± 50 ± 13.5 95 90 120 ± 12.5 0.05 120 300 20 ± 100 VCM = ± 13V VS = ± 3V to ±18V Large-Signal Voltage Gain RL ≥ 2k, VO = ±10V RL ≥ 10k RL ≥ 2k Note 1: Offset voltage is measured with high speed test equipment approximately 0.5 seconds after power is applied. Note 2: Long-term input offset voltage stability refers to the averaged trend line of VOS vs. time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 days are typically 2.5µV. Note 3: Parameter is guaranteed by design, characterization, or correlation to other tested parameters. Note 4: 10Hz noise voltage density is sample tested on every lot to an LTPD of 15. Devices 100% tested at 10Hz are available on request. Note 5: VS = ± 15V, VCM = 0V, unless otherwise noted. Note 6: TA = 25°C, VS = ± 15V, VCM = 0V, unless otherwise noted. TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS Final Electrical Test Requirements (Method 5004) Group A Test Requirements (Method 5005) Group B and D for Class S, and Group C and D for Class B End Point Electrical Parameters (Method 5005) * PDA Applies to subgroup 1. See PDA Test Notes. SUBGROUP 1*,2,3,4,5,6 1,2,3,4,5,6 1 PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TOTAL DOSE BIAS CURRE T 10k 15V – 10k 8V + –15V UW U RH07 F01 3 RH07 TYPICAL PERFOR A CE CHARACTERISTICS Positive Slew Rate 0.4 VS = ±15V RL = 2k NEGATIVE SLEW RATE (V/µs) POSITIVE SLEW RATE (V/µs) 0.3 0.3 0.4 VS = ±15V RL = 2k INPUT OFFSET VOLTAGE (µV) 0.2 0.1 0 1 10 100 TOTAL DOSE KRAD (Si) Open-Loop Gain 150 140 VOLTAGE GAIN (dB) 130 120 110 100 90 80 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH07 G04 60 INPUT BIAS CURRENT (nA) COMMON-MODE REJECTION RATIO (dB) VS = ±15V RL = 2k VOUT = ± 10V Input Offset Current 6 POWER SUPPLY REJECTION RATIO (dB) VS = ±15V VCM = 0V INPUT OFFSET CURRENT (nA) 4 2 0 –2 –4 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH07 G07 4 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7487 (408) 432-1900 q FAX: (408) 434-0507 q TELEX: 499-3977 UW RH07 G01 Negative Slew Rate 150 100 50 0 –50 Input Offset Voltage VS = ±15V VCM = 0V 0.2 0.1 –100 –150 1000 0 –200 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH07 G02 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH07 G03 Input Bias Current 70 VS = ±15V VCM = 0V 170 160 150 140 130 120 110 100 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH07 G05 Common-Mode Rejection Ratio VS = ±15V VCM = ± 13V 50 40 30 20 10 0 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH07 G06 Power Supply Rejection Ratio 140 VS = ± 3V TO ±18V 130 120 110 100 90 80 70 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH07 G08 I.D. No. 66-10-0170 LT/LT 0803 REV B • PRINTED IN USA © LINEAR TECHNOLOGY CORPORATION 1993