0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
H11A4S

H11A4S

  • 厂商:

    LITEON(光宝)

  • 封装:

    6-SMD,鸥翼型

  • 描述:

    OPTOISO 5.3KV TRANS W/BASE 6SMD

  • 详情介绍
  • 数据手册
  • 价格&库存
H11A4S 数据手册
LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High input-output isolation voltage ( Viso = 5,000Vrms ) * Current transfer ratio ( CTR : MIN. 10% at IF = 10mA, VCE = 10V ) * Dual-in-line package : H11A1, H11A2, H11A3, H11A4, H11A5 * Wide lead spacing package : H11A1M, H11A2M, H11A3M, H11A4M, H11A5M * Surface mounting package : H11A1S, H11A2S, H11A3S, H11A4S, H11A5S * Tape and reel packaging : (TYPE I) H11A1S-TA, H11A2S-TA, H11A3S-TA, H11A4S-TA, H11A5S-TA (TYPE II) H11A1S-TA1, H11A2S-TA1, H11A3S-TA1, H11A4S-TA1, H11A5S-TA1 * UL approved ( No. E113898 ) * FIMKO approved ( No. 209049 ) * NEMKO approved ( No. P99102464 ) * DEMKO approved ( No. 99-04182 ) * SEMKO approved ( No. 9943380 / 01-20 ) * VDE approved ( No. 094722 ) * CSA approve in progress Part No. : H11A1 thru H11A5 SERIES BNS-OD-C131/A4 Page : 1 of 8 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS Dual-in-line package: Wide lead spacing package : *1. *2. *3. *4. Year date code. 2-digit work week. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand). Model No.: H11A1, H11A2, H11A3, H11A4,H11A5 Part No. : H11A1 thru H11A5 SERIES BNS-OD-C131/A4 Page : 2 of 8 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS Surface mounting package : *1. *2. *3. *4. Year date code. 2-digit work week. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand). Model No.: H11A1, H11A2, H11A3, H11A4, H11A5 Part No. : H11A1 thru H11A5 SERIES BNS-OD-C131/A4 Page : 3 of 8 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only TAPING DIMENSIONS Tape and reel packaging ( TYPE I ): Tape and reel packaging ( TYPE II ): Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Part No. : H11A1 thru H11A5 SERIES BNS-OD-C131/A4 Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 16 ± 0.3 ( .63 ) 4 ± 0.1 ( .15 ) 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) 12 ± 0.1 ( .472 ) Page : 4 of 8 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER SYMBOL RATING UNIT Forward Current IF 60 mA Reverse Voltage VR 6 V Power Dissipation P 100 mW Collector - Emitter Voltage VCEO 30 V Emitter - Collector Voltage VECO 7 V Collector - Base Voltage VCBO 70 V Collector Current IC 150 mA Collector Power Dissipation PC 150 mW Ptot 250 mW Viso 5,000 Vrms Operating Temperature Topr -55 ~ +100 °C Storage Temperature Tstg -55 ~ +150 °C Tsol 260 °C INPUT OUTPUT Total Power Dissipation *1 Isolation Voltage *2 Soldering Temperature *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector, emitter and base on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : H11A1 thru H11A5 SERIES BNS-OD-C131/A4 Page : 5 of 8 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER INPUT OUTPUT * CTR = CONDITIONS Forward Voltage VF — 1.2 1.5 V IF=10mA Reverse Current IR — — 10 µA VR=6V Terminal Capacitance Ct — 18 — pF V=0, f=1MHz Collector Dark Current ICEO — — 50 nA VCE=10V, IF=0 Collector-Emitter Breakdown Voltage BVCEO 30 — — V IC=0.1mA IF=0 Emitter-Collector Breakdown Voltage BVECO 7 — — V IE=10µA IF=0 Collector-Base Breakdown Voltage BVCBO 70 — — V IC=0.1mA IF=0 Collector-Emitter Capacitance CCE — 12 — pF V=0V, f=1MHZ Collector-Base Capacitance CCB — 17 — pF VCB=0V, f=1MHZ Emitter-Base Capacitance CEB — 25 — pF VEB=0V, f=1MHZ H11A1 50 — — H11A2 20 — — 20 — — % IF=10mA VCE=10V H11A4 10 — — H11A5 30 — — IF=10mA IC=0.5mA Current * Transfer Ratio TRANSFER CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT H11A3 CTR Collector-Emitter Saturation Voltage VCE(sat) — 0.15 0.4 V Isolation Resistance Riso 100 — — GΩ DC500V 40 ~ 60% R.H. Floating Capacitance Cf — 0.3 — pF V=0, f=1MHz Response Time (Rise) tr — 2.8 — µs Response Time (Fall) tf — 4.5 — µs VCC=10V, IF=10mA RL=100Ω IC × 100% IF Part No. : H11A1 thru H11A5 SERIES BNS-OD-C131/A4 Page : 6 of 8 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation Pc (mW) Forward current I F (mA) 80 60 40 20 0 -55 -25 0 25 50 75 100 125 200 150 100 50 0 -55 -25 o Ambient temperature Ta ( C) Fig.3 Collector-emitter saturation Voltage vs. Forward current 75 100 125 100 5 3mA 5mA 7mA 9mA 4 Turn-on time ton ( s) Collector-emitter saturation voltage VCE(sat) (V) 50 Ic= 0.5mA 3 2 1mA RL= 1000 10 RL= 100 1 0 1 0 3 6 9 12 15 1 Input current I F (mA) Fig.5 Current Transfer Ratio vs. Forward Current Fig.6 Collector Current vs. Collector-emitter Voltage 250 60 PC (MAX.) VCE= 10V Collector current Ic (mA) 200 150 100 50 0 0 100 10 Forward current I F (mA) Current transfer ratio CTR (%) 25 Fig.4 Turn-On Switching Times 6 50 40 IF= 30mA 30 20mA 20 10mA 5mA 10 1mA 0 10 20 30 40 Forward current (mA) Part No. : H11A1 thru H11A5 SERIES BNS-OD-C131/A4 0 Ambient temperature Ta ( C) 50 0 2 4 6 8 10 Collector-emitter voltage VCE(V) Page : 7 of 8 LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.7 Rise and Fall Times Fig.8 Turn-off Switching Times 10 50 tf RL= 1000 Turn-off time toff ( s) 5 Time ( s) RL= 1000 tf 2 tr tr RL= 100 RL= 100 1 20 RL= 1000 10 5 2 0.5 RL= 100 1 1 5 10 20 50 1 2 Input current I F (mA) Test Circuit for Response Time Vcc Input RD RL 5 10 20 50 Input current I F (mA) Test Circuit for Frequency Response Vcc Input Output Output 10% RD RL Output 90% ts td tr Part No. : H11A1 thru H11A5 SERIES BNS-OD-C131/A4 tf Page : 8 of 8
H11A4S
1. 物料型号:H11A1至H11A5系列。 2. 器件简介:这些光耦器件具有高输入输出隔离电压(5000Vrms),不同的电流传输比(CTR从10%至50%不等),并提供多种封装类型,包括双列直插式、宽引脚间距式、表面贴装式,以及胶带和卷轴包装。 3. 引脚分配:文档提供了不同封装类型的引脚分配图和尺寸。 4. 参数特性:包括绝对最大额定值,如输入正向电流、反向电压、功耗等,以及电气-光学特性,如正向电压、反向电流、终端电容等。 5. 功能详解:文档详细描述了器件的工作原理和电气特性,包括隔离电压的测量方法、响应时间和传输特性。 6. 应用信息:虽然文档没有直接提供应用信息,但光耦器件通常用于电气隔离,如在数字通信、高速数据传输、电源管理等领域。 7. 封装信息:文档提供了不同封装类型的详细尺寸和规格。
H11A4S 价格&库存

很抱歉,暂时无法提供与“H11A4S”相匹配的价格&库存,您可以联系我们找货

免费人工找货