LTP-757KR-NB

LTP-757KR-NB

  • 厂商:

    LITEON(光宝)

  • 封装:

  • 描述:

    LTP-757KR-NB - Property of Lite-On Only - Lite-On Technology Corporation

  • 详情介绍
  • 数据手册
  • 价格&库存
LTP-757KR-NB 数据手册
LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES *0.7 inch (17.22mm) DIGIT HEIGHT *CONTINUOUS UNIFORM SEGMENTS *LOW POWER REQUIREMENT *EXCELLENT CHARACTERS APPEARANCE *HIGH BRIGHTNESS & HIGH CONTRAST *WIDE VIEWING ANGLE *SOLID STATE RELIABILITY *CATEGORIZED FOR LUMINOUS INTENSITY *LEAD-FREE PACKAGE DESCRIPTION The LTP-757KR-NB is a 0.7inch (17.22mm) matrix height 5 x 7 dot matrix display. This device uses AlInGap Super Red LED chips (AlInGaP epi on GaAs substrate). The display has black face and white dots. DEVICE PART NO. AlInGaP Hyper Red LTP-757KR-NB DESCRIPTION Cathode Column Anode Row PART NO.: LTP-757KR-NB BNS-OD-C131/A4 PAGE: 1 of 5 LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only PACKAGE DIMENSIONS NOTES: All dimensions are in millimeters. Tolerances are ± 0.25-mm (0.01“) unless otherwise noted. INTERNAL CIRCUIT DIAGRAM PART NO.: LTP-757KR-NB BNS-OD-C131/A4 PAGE: 2 of 5 LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only PIN CONNECTION No. 1 2 3 4 5 6 7 8 9 10 11 12 CONNECTION CATHODE COLUMN 1 ANODE ROW 3 CATHODE COLUMN 2 ANODE ROW 5 ANODE ROW 6 ANODE ROW 7 CATHODE COLUMN 4 CATHODE COLUMN 5 ANODE ROW 4 CATHODE COLUMN 3 ANODE ROW 2 ANODE ROW 1 PART NO.: LTP-757KR-NB BNS-OD-C131/A4 PAGE: 3 of 5 LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only ABSOLUTE MAXIMUM RATING PARAMETER Average Power Dissipation Per dot Peak Forward Current Per dot Average Forward Current Per dot Derating Linear From 250C Per dot Reverse Voltage Per dot Operating Temperature Range Storage Temperature Range MAXIMUM RATING 40 90 15 0.2 5 -35 C to +85 C -350C to +850C 0 0 UNIT mW mA mA mA/0C V Soldering Conditions : 1/16 inch below seating plane for 3 seconds at 2600C ELECTRICAL / OPTICAL CHARACTERISTICS AT TA=25oC PARAMETER Average Luminous Intensity Peak Emission Wavelength Spectral Line Half-Width Dominant Wavelength Forward Voltage Per dot Reverse Current Per dot Luminous Intensity Matching Ratio (Similar Light Area) SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION IV λp ∆λ λd VF IR IV-m 630 1732 639 20 631 2.0 2.6 100 2:1 µcd nm nm nm V µA IP=32mA , 1/16Duty IF=20mA IF=20mA IF=20mA IF=20mA VR=5V IP=32mA , 1/16Duty Note: Luminous intensity is measured with a light sensor and filter combination that approximates the CIE (Commision Internationale De L’Eclairage) eye-response curve. PART NO.: LTP-757KR-NB BNS-OD-C131/A4 PAGE: 4 of 5 LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only TYPICAL ELECTRICAL / OPTICAL CHARACTERISTIC CURVES (25oC Ambient Temperature Unless Otherwise Noted) PART NO.: LTP-757KR-NB BNS-OD-C131/A4 PAGE: 5 of 5
LTP-757KR-NB
1. 物料型号: - 型号为LTP-757KR-NB。

2. 器件简介: - LTP-757KR-NB是一款0.7英寸(17.22mm)的5x7点阵显示模块,使用AlInGap超红光LED芯片(AlInGaP外延在GaAs基底上)。该显示器具有黑色面板和白色点。

3. 引脚分配: - 1号引脚:阴极列1 - 2号引脚:阳极行3 - 3号引脚:阴极列2 - 4号引脚:阳极行5 - 5号引脚:阳极行6 - 6号引脚:阳极行7 - 7号引脚:阴极列4 - 8号引脚:阴极列5 - 9号引脚:阳极行4 - 10号引脚:阴极列3 - 11号引脚:阳极行2 - 12号引脚:阳极行1

4. 参数特性: - 每个点的平均功率耗散:40mW - 每个点的峰值正向电流:90mA - 每个点的平均正向电流:15mA - 线性降额系数:从250C起每个点0.2 mA/0C - 每个点的反向电压:5V - 工作温度范围:-35°C至+85°C - 存储温度范围:-35°C至+85°C - 焊接条件:低于座位平面1/16英寸,3秒,260°C

5. 功能详解: - 平均发光强度:630到1732微坎德拉(IP=32mA,1/16占空比) - 峰值发射波长λp:639纳米(IF=20mA) - 光谱线半宽Δλ:20纳米(IF=20mA) - 主波长λd:631纳米(IF=20mA) - 每个点的正向电压VF:2.0到2.6V(IF=20mA) - 每个点的反向电流IR:100微安(VR=5V) - 类似光区域发光强度匹配比IV-m:2:1(IP=32mA,1/16占空比)

6. 应用信息: - 该器件适用于需要低功耗、高亮度、高对比度和宽视角的显示应用。

7. 封装信息: - 封装尺寸图和内部电路图已在文档中提供,所有尺寸单位为毫米,公差为±0.25毫米,除非另有说明。
LTP-757KR-NB 价格&库存

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