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FEATURES
* Current transfer ratio ( CTR : MIN. 50% at IF = 5mA, VCE = 5V ) * Isolation voltage between input and output LTV-357T-TP1 ( Viso = 3,750Vrms ) * Employs double transfer mold technology * Subminiature type ( The volume is smaller than that of conventional DIP type by as far as 30% ) * Mini-flat package : 2.0mm profile : LTV-357T-TP1 * Packing volume : 3000 pcs / Reel * RoHS compliance
APPLICATIONS
* Hybrid substrates that require high density mounting. * Programmable controllers
Part No. : LTV-357T-TP1
BNS-OD-C131/A4
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OUTLINE DIMENSIONS
LTV-357T-TP1 :
2.54±0.25 Pin No. and Internal connection diagram Date Code *1 4 3
4.40±0.2
Factory Code *2.
Rank *3
1 1. Anode 2. Cathode
2 3. Emitter 4. Collector
3.85±0.3
5.30±0.3 0.2±0.05
2.00±0.2
*1. 2-digit date code. *2. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). *3. Rank shall be or shall not be marked.
Part No. : LTV-357T-TP1
BNS-OD-C131/A4
0.10±0.1
0.40±0.1
7.00+0.2 -0.7
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TAPING DIMENSIONS
Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment
Symbol W P0 F P2 P1
Dimensions in mm ( inches ) 12 ± 0.3 ( .47 ) 4 ± 0.1 ( .15 ) 5.5 ± 0.1 ( .217 ) 2 ± 0.1 ( .079 ) 8 ± 0.1 ( .315 )
Part No. : LTV-357T-TP1
BNS-OD-C131/A4
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ABSOLUTE MAXIMUM RATING
( Ta = 25°C ) PARAMETER Forward Current INPUT Reverse Voltage Power Dissipation Collector - Emitter Voltage Emitter - Collector Voltage OUTPUT Collector Current Collector Power Dissipation Total Power Dissipation *1 Isolation Voltage Operating Temperature Storage Temperature *2 Soldering Temperature Junction Temperature IC PC Ptot Viso Topr Tstg Tsol Tj 50 150 170 3,750 -55 ~ +110 -55 ~ +150 260 125 mA mW mW Vrms °C °C °C °C SYMBOL IF VR P VCEO VECO RATING 50 6 70 35 6 UNIT mA V mW V V
*1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds
Part No. : LTV-357T-TP1
BNS-OD-C131/A4
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ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C ) PARAMETER Forward Voltage INPUT Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Current *1 Current Transfer Ratio Collector-Emitter Saturation Voltage TRANSFER CHARACTERISTICS Isolation Resistance Floating Capacitance Response Time (Rise) Response Time (Fall) SYMBOL MIN. TYP. MAX. UNIT VF IR Ct ICEO BVCEO — — — — 35 1.2 — 30 — — 1.4 10 250 100 — V µA pF nA V CONDITIONS IF=20mA VR=4V V=0, f=1KHz VCE=20V, IF=0 IC=0.1mA IF=0 IE=10µA IF=0 IF=5mA VCE=5V IF=20mA IC=1mA DC500V 40 ~ 60% R.H. V=0, f=1MHz VCE=2V, IC=2mA RL=100Ω
OUTPUT
BVECO IC CTR VCE(sat)
6 2.5 50 —
— — — —
— 30 600 0.2
V mA % V Ω pF µs µs
Riso Cf tr tf
5×1010 1×1011 — — — 0.6 4 3
— 1 18 18
*1
CTR =
IC × 100% IF
Part No. : LTV-357T-TP1
BNS-OD-C131/A4
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RANK TABLE OF CURRENT TRANSFER RATIO CTR
MODEL NO.
RANK MARK A B C
CTR ( % ) 80 ~ 160 130 ~ 260 200 ~ 400 300 ~ 600 50 ~ 150 100 ~ 300 50 ~ 600
LTV-357T-TP1
D E F A or B or C or D or E or F or No mark
IF = 5 mA CONDITIONS VCE = 5 V Ta = 25 °C
Part No. : LTV-357T-TP1
BNS-OD-C131/A4
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CHARACTERISTICS CURVES
Fig.1 Forword Current Fig.1 Forword Current Temperatute vs. Ambient Temperatute
60
Fig.2 Collector Power Dissiption Fig.2 Collector Power Dissiption vs. Ambient Temperature vs. Ambient Temperature
Collector Power dissipation Collector Power dissipation Pc (mW) Pc (mW)
200 200
Forward current IIF(mA) F(mA)
50 40 30 20 10 0 -30 -55
150 150
100 100
50 50
0 0
25 25
50
75
100 125 100 125
oo
00 -30 -55
0 0
25 25
50 50
75 100 125 75 100 125
o
Ambient temperature Ta (( C) temperature Ta C)
Ambient temperature Ta ( C) Ambient temperature Ta ( C)
o
Fig.3 Collector-emitter Saturation Voltage vs. Forward Current
1mA 3mA 5mA Collecotr-emitter saturation voltage VCE (sat) (V) Ic= 0.5mA 7mA
Fig.4 Forward Current vs. Forward Voltage
O
6 5 4 3 2 1
Ta= 25 C
500
Forward current I F(mA)
200 100 50 20 10 5 2
Ta= 75 C 50 C
o
o
25 C 0C -25 C
o o
o
0 0 5 10 15
1 0 0.5 1.0 1.5 2.0 2.5 3.0
Forward current I F(mA)
Forward voltage VF(V)
Fig.5 Current Transfer Ratio vs. Forward Current
200
Current transfer ratio CTR (%)
Fig.6 Collector Current vs. Collector-emitter Voltage
50
180 160 140 120 100 80 60 40 20 0 1
VCE= 5V Ta= 25 C
o
I F= 30mA
Collector current Ic (mA)
25mA
Ta= 25 C
o
40 20mA 30 15mA 20 10mA 10 5mA 0 Pc(MAX.)
2
5
10
20
50
0
1
2
3
4
5
6
7
8
9
Forward current I F(mA)
Collector-emitter voltage VCE(V)
Part No. : LTV-357T-TP1
BNS-OD-C131/A4
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CHARACTERISTICS CURVES
Fig.7 Relative Current Transfer Ratio Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature vs. Ambient Temperature
Relative current transfer ratio (%) Relative current transfer ratio (%)
150 150
Fig.8 Collector-emitter Saturation Voltage Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature vs. Ambient Temperature
Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V)
I F= 5mA IF= 5mA = 2V VCE VCE= 2V
0.10 0.10 0.08 0.08 0.06 0.06 0.04 0.04 0.02 0.02
00 20 20
F 20mA I FI= = 20mA C 1mA I CI= = 1mA
100 100
50
50
0 0 20 20
80 40 80 Ambient60 temperature Ta 100 ( C)
o
40
60
100
4040
60 60
80 80
oo
100 100
Ambient temperature Ta C) Ambient temperature Ta ( ( C)
Ambient temperature Ta ( C)
o
Fig.9 Collector Dark Current vs. Ambient Temperature
10000
Fig.10 Response Time vs. Load Resistance
500 200 100 50 20 10 5 2 1 0.5 0.2 0.05 ts
Collector dark current ICEO (nA)
VCE= 20V
Response time ( s)
1000
VCE= 2V IC= 2mA Ta= 25 C
o
tr tf td
100
10
1 20 40 60 80
o
100
0.1 0.2
0.5
1
2
5
10
Ambient temperature Ta ( C)
Load resistance RL (k )
Fig.11 Frequency Response
Test Circuit for Response Time
Vcc Input Output Output
Voltage gain Av (dB)
0
VCE= 2V I C= 2mA Ta= 25 C
o
Input
RD
RL
10% 90%
td
ts tr tf
100Ω
10
RL= 10kΩ
1kΩ
Test Circuit for Frequency Response
Vcc
20 0.5 1 2 5 10 20 50 100 500
RD
RL
Output
Frequency f (kHz)
Part No. : LTV-357T-TP1
BNS-OD-C131/A4
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TEMPERATURE PROFILE OF SOLDERING REFLOW
(1) One time soldering reflow is recommended within the condition of temperature and time profile shown below.
Part No. : LTV-357T-TP1
BNS-OD-C131/A4
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TEMPERATURE PROFILE OF SOLDERING REFLOW
(2) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1)
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
Part No. : LTV-357T-TP1
BNS-OD-C131/A4
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Notes:
- Lite-On is continually improving the quality, reliability, function or design and Lite-On reserves the right to make changes without further notices. - The products shown in this publication are designed for the general use in electronic applications such as office automation equipment, communications devices, audio/visual equipment, electrical application and instrumentation. - For equipment/devices where high reliability or safety is required, such as space applications, nuclear power control equipment, medical equipment, etc, please contact our sales representatives. - When requiring a device for any ”specific” application, please contact our sales in advice. - If there are any questions about the contents of this publication, please contact us at your convenience. - The contents described herein are subject to change without prior notice. Do not immerse unit’s body in solder paste.
Part No. : LTV-357T-P (FOR POWER ONLY)
BNS-OD-C131/A4
Page : 11 of 11
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