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LTV-4N26S

LTV-4N26S

  • 厂商:

    LITEON(光宝)

  • 封装:

  • 描述:

    LTV-4N26S - Property of Lite-On Only - Lite-On Technology Corporation

  • 数据手册
  • 价格&库存
LTV-4N26S 数据手册
L ITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * Response time ( tr : TYP. 3µs at VCE = 10V, IC = 2mA, RL = 100Ω ) * Current transfer ratio ( CTR : MIN. 20% at IF = 10mA, VCE = 10V ) * Input-output isolation voltage LTV-4N25 series : Viso = 2,500Vrms LTV-4N26 series : Viso = 1,500Vrms * Dual-in-line package : LTV-4N25, LTV-4N26 * Wide lead spacing package : LTV-4N25M, LTV-4N26M * Surface mounting package : LTV-4N25S, LTV-4N26S * Tape and reel packaging : LTV-4N25S-TA, LTV-4N26S-TA, LTV-4N25S-TA1, LTV-4N26S-TA1 * UL approved ( No. E113898 ) * TUV approved ( No. R9653630 ) * CSA approved ( No. CA91533-1 ) * FIMKO approved ( No. 193422-01 ) * NEMKO approved ( No. P96103013 ) * DEMKO approved ( No. 303985 ) * SEMKO approved ( No. 9646047 / 01-30 ) * VDE approved ( No. 094722 ) Part No. : LTV-4N25 / 4N26 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 1 of 9 L ITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-4N25 : LTV-4N26 : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand). Part No. : LTV-4N25 / 4N26 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 2 of 9 L ITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-4N25M : LTV-4N26M : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand). Part No. : LTV-4N25 / 4N26 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 3 of 9 L ITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only OUTLINE DIMENSIONS LTV-4N25S : LTV-4N26S : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand). Part No. : LTV-4N25 / 4N26 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 4 of 9 L ITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only TAPING DIMENSIONS LTV-4N25S-TA , LTV-4N26S-TA : LTV-4N25S-TA1 , LTV-4N26S-TA1 : Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 16 ± 0.3 ( .63 ) 4 ± 0.1 ( .15 ) 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) 12 ± 0.1 ( .472 ) Part No. : LTV-4N25 / 4N26 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 5 of 9 L ITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER Forward Current INPUT Reverse Voltage Power Dissipation Collector - Emitter Voltage Emitter - Collector Voltage OUTPUT Collector - Base Voltage Collector Current Collector Power Dissipation Total Power Dissipation LTV-4N25 series *1 Isolation Voltage LTV-4N26 series Operating Temperature Storage Temperature *2 Soldering Temperature Topr Tstg Tsol Viso 1,500 -55 ~ +100 -55 ~ +150 260 °C °C °C SYMBOL IF VR P VCEO VECO VCBO IC PC Ptot RATING 80 6 150 30 7 70 100 150 250 2,500 Vrms UNIT mA V mW V V V mA mW mW *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector, emitter and base on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : LTV-4N25 / 4N26 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 6 of 9 L ITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER Forward Voltage INPUT Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage OUTPUT Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage Collector Current * Current Transfer Ratio Collector-Emitter Saturation Voltage TRANSFER CHARACTERISTICS Isolation Resistance Floating Capacitance Response Time (Rise) Response Time (Fall) SYMBOL MIN. TYP. MAX. UNIT VF IR Ct ICEO BVCEO — — — — 30 1.2 — 50 — — 1.5 10 — 50 — V µA pF nA V CONDITIONS IF=10mA VR=4V V=0, f=1KHz VCE=10V, IF=0 IC=0.1mA IF=0 IE=10µA IF=0 IC=0.1mA IF=0 IF=10mA VCE=10V IF=50mA IC=2mA DC500V 40 ~ 60% R.H. V=0, f=1MHz VCE=10V, IC=2mA RL=100Ω BVECO 7 — — V BVCBO IC CTR VCE(sat) 70 2 20 — — — — 0.1 — — — 0.5 V mA % V Ω pF µs µs Riso Cf tr tf 5×1010 1×1011 — — — 1 3 3 — — — — * CTR = IC × 100% IF Part No. : LTV-4N25 / 4N26 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 7 of 9 L ITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.1 Forward Current vs. Ambient Temperature 100 Fig.2 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation Pc (mW) 200 Forward current I F (mA) 80 60 40 20 0 -55 -25 150 100 50 0 25 50 75 100 125 o 0 -55 -25 0 25 50 75 100 125 o Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.3 Forward Current vs. Forward Voltage 500 o Fig.4 Current Transfer Ratio vs. Forward Current 50 V = 10V o Ta= 25 C Forward current IF (mA) 200 100 50 20 10 5 2 1 0 0.5 o o o o Current Transfer ratio CTR (%) 40 30 20 R= 10 100k 0 0.1 0.2 0.5 1 2 5 10 20 50 100 1.0 1.5 2.0 2.5 3.0 Forward voltage VF(V) Forward current IF (mA) Fig.5 Collector Current vs. Collector-emitter Voltage 15 Ta= 25 C o Fig.6 Relative Current Transfer Ratio vs. Ambient Temperature 300 10 30mA Relative current transfer ratio (%) IF = 40mA Pc(MAX.) IF= 10mA V = 10V Collector current Ic (mA) 200 20mA 5 10mA 5mA 0 0 5 10 15 Collector-emitter voltage V (V) CE 100 0 -55 -25 0 25 50 75 o 100 Ambient temperature Ta ( C) Part No. : LTV-4N25 / 4N26 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 8 of 9 L ITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only CHARACTERISTICS CURVES Fig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE(sat)(V) 0.3 Fig.8 Collector Dark Current vs. Ambient Temperature 10 -6 5 Collector dark current ICEO (A) I F= 50mA I C= 2mA V = 10V 10 10 10 10 -7 5 -8 5 0.2 -9 5 -10 5 0.1 10 10 10 -12 5 5 0 -55 -13 -25 0 25 50 75 O 100 -55 -25 0 20 40 60 100 125 O Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.9 Response Time vs. Load Resistance 100 50 Fig.10 Frequency Response 5 V = 10V Ic= 2mA Ta= 25 C O tf tr td 10 5 2 1 0.5 0.2 0.1 0.05 0.1 0.2 0.5 1 2 Voltage gain Av (dB) Response time ( s) 20 0 -5 RL 10k = -10 -15 -20 0.5 1 2 1k V = 5V Ic= 2mA Ta= 25 C O 100 ts 5 10 20 50 5 10 20 50 100 200 500 Load resistance RL(k ) Frequency f (kHz) Fig.11 Collector-emitter Saturation Voltage vs. Forward Current Collector-emitter saturation voltage VCE(sat)(V) Ic= 0.5mA 1mA 2mA 3mA 5mA 7mA 7 6 5 4 3 2 1 Ta= 25 C O Test Circuit for Response Time Vcc Input Input Output Output RD RL 10% 90% td tr ts tf Test Circuit for Frequency Response Vcc RD 0 0 5 10 15 20 25 Forward current I F(mA) 30 RL Output Part No. : LTV-4N25 / 4N26 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 9 of 9
LTV-4N26S 价格&库存

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