LTV-8D52S-TA1

L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only FEATURES * High current transfer ratio ( CTR : MIN. 1000% at IF = 1mA, VCE = 2V ) * High input-output isolation voltage ( Viso = 5,000Vrms ) * High collector-emitter voltage ( VCEO = 300V ) * Dual-in-line package : LTV-852 : 1-channel type LTV-8D52 : 2-channel type * Wide lead spacing package : LTV-852M : 1-channel type LTV-8D52M : 2-channel type * Surface mounting package : LTV-852S : 1-channel type LTV-8D52S : 2-channel type * Tape and reel packaging : LTV-852S-TA1, LTV-8D52S-TA1, LTV-852S-TA, LTV-8D52-TA * UL approved ( No. E113898 ) * TUV approved ( No. R9653630 ) * CSA approved ( No. CA91533-1 ) * FIMKO approved ( No. 202944 ) * NEMKO approved ( No. P98101736 ) * DEMKO approved ( No. 307924 ) * SEMKO approved ( No. 9833166 / 01-20 ) * VDE approved ( No. 094722 ) Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 1 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only OUTLINE DIMENSIONS LTV-852 : LTV-8D52 : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 2 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only OUTLINE DIMENSIONS LTV-852M : LTV-8D52M : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 3 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only OUTLINE DIMENSIONS LTV-852S : LTV-8D52S : *1. Year date code. *2. 2-digit work week. *3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China). Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 4 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only TAPING DIMENSIONS LTV-852S-TA1 : LTV-8D52S-TA1 : Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 16 ± 0.3 ( .63 ) 4 ± 0.1 ( .15 ) 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) 12 ± 0.1 ( .472 ) Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 5 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only TAPING DIMENSIONS LTV-852S-TA : LTV-8D52S-TA : Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 16 ± 0.3 ( .63 ) 4 ± 0.1 ( .15 ) 7.5 ± 0.1 ( .295 ) 2 ± 0.1 ( .079 ) 12 ± 0.1 ( .472 ) Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 6 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only ABSOLUTE MAXIMUM RATING ( Ta = 25°C ) PARAMETER Forward Current INPUT Reverse Voltage Power Dissipation Collector - Emitter Voltage Emitter - Collector Voltage OUTPUT Collector Current Collector Power Dissipation Total Power Dissipation *1 Isolation Voltage Operating Temperature Storage Temperature *2 Soldering Temperature IC PC Ptot Viso Topr Tstg Tsol 150 150 200 5,000 -30 ~ +100 -55 ~ +125 260 mA mW mW Vrms °C °C °C SYMBOL IF VR P VCEO VECO RATING 50 6 70 300 0.1 UNIT mA V mW V V *1. AC For 1 Minute, R.H. = 40 ~ 60% Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side. (2) The isolation voltage tester with zero-cross circuit shall be used. (3) The waveform of applied voltage shall be a sine wave. *2. For 10 Seconds Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 7 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only ELECTRICAL - OPTICAL CHARACTERISTICS ( Ta = 25°C ) PARAMETER Forward Voltage INPUT Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector Current *1 Current Transfer Ratio Collector-Emitter Saturation Voltage Isolation Resistance Floating Capacitance Cut-Off Frequency Response Time (Rise) Response Time (Fall) SYMBOL MIN. TYP. MAX. UNIT VF IR Ct ICEO BVCEO — — — — 300 1.2 — 30 — — 1.4 10 250 200 — V µA pF nA V CONDITIONS IF=10mA VR=4V V=0, f=1KHz VCE=200V, IF=0 IC=0.1mA IF=0 IE=10µA IF=0 IF=1mA VCE=2V IF=20mA IC=100mA DC500V 40 ~ 60% R.H. V=0, f=1MHz VCE=2V, IC=20mA RL=100Ω, -3dB VCC=2V, IC=20mA RL=100Ω OUTPUT BVECO IC CTR VCE(sat) 0.1 10 — 40 — 150 V mA % V Ω pF kHz µs µs 1,000 4,000 15,000 — — 1.2 TRANSFER CHARACTERISTICS Riso Cf fc tr tf 5×1010 1×1011 — 1 — — 0.6 7 100 20 — 1 — 300 100 *1 CTR = IC × 100% IF Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 8 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only CHARACTERISTICS CURVES Fig.1 Forward Current vs. Ambient Temperature 60 Forward current I F (mA) Fig.2 Collector Power Dissipation vs. Ambient Temperature Collector power dissipation Pc (mW) 200 50 40 30 20 10 0 -30 150 100 50 0 25 50 75 100 o 125 0 -30 0 20 40 60 o 80 100 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.3 Collector-emitter saturation Voltage vs. Forward current 5 Collector-emitter saturation voltage V (sat) (V) Fig.4 Forward Current vs. Forward Voltage 100 100 C 80 C 10 60 C o o o 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 Forward current (mA) Ic=5mA 10mA 30mA 50mA 70mA 100mA 40 C 20 C o o 3 4 5 1 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 Forward current IF (mA) Forward voltage (V) Fig.5 Current Transfer Ratio vs. Forward Current 7000 Current transfer ratio CTR (%) Fig.6 Collector Current vs. Collector-emitter Voltage 100 Collector current Ic (mA) VCE=2V 6000 5000 4000 3000 2000 1000 0 0.1 1 Forward current (mA) 10 10mA 5mA 80 3mA 60 40 20 0 2.5mA 2mA 1.5mA 1mA P C (MAX.) I F=0.5mA 0 1 2 3 4 5 Collector-emitter voltage V CE(V) Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 9 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only CHARACTERISTICS CURVES Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature 1.0 Relative current transfer ratio (%) Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage VCE (sat) (V) 0.8 0.6 0.4 0.2 0 I F =1mA VCE=2V 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 20 I F=20mA Ic=100mA 20 40 60 80 O 100 40 60 80 O 100 Ambient temperature Ta ( C) Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Temperature 1000 Fig.10 Response Time vs. Load Resistance 1000 500 Collector dark current I CEO (nA) VCE =200V VCE=2V I C=20mA tr tf td ts Response time ( s) 200 100 50 20 10 5 2 1 100 10 20 40 60 80 O 100 0.1 1 10 Ambient temperature Ta ( C) Load resistance R L (k ) Fig.11 Frequency Response Test Circuit for Response Time Vcc VCE=2V I C=20mA Input RD RL Input Output Output td tr ts tf 0 Voltage gain Av (dB) 10% 90% -5 -10 -15 -20 -25 0.1 1 10 100 500 R L =1k 100 10 Test Circuit for Frequency Response Vcc RD RL Output Frequency f (kHz) Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 10 of 11 L IT E - O N T E C HN OLOGY C OR P OR A TI ON Property of LITE-ON Only RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD) Unit : mm 4 PIN 8 PIN Part No. : LTV-852 / 8D52 ( M, S, S-TA, S-TA1 ) BNS-OD-C131/A4 Page : 11 of 11