TC0720H

LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 SMC SMC A DIM. A B C B C D E MIN. 6.60 5.59 2.92 0.15 7.75 0.05 2.01 0.76 MAX. 7.11 6.22 3.18 0.31 8.13 0.20 2.62 1.52 MECHANICAL DATA Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.093 grams G H E F D F G H A ll Dimensions in millimeter MAXIMUM RATINGS CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range storage temperature range SYMBOL VALUE UNIT A A ℃ ℃ IPP ITSM TJ TSTG 100 50 -40 to +150 -55 to +150 THERMAL RESISTANCE CHARACTERISTICS Junction to leads Junction to ambient on print circuit (on recommended pad layout) Typical positive temperature coefficient for brekdown voltage SYMBOL VALUE UNIT ℃/W ℃/W %/℃ Rth(J-L) Rth(J-A) △VBR/△TJ 20 100 0.1 MAXIMUM RATED SURGE WAVEFORM WAVEFORM 2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us STANDARD GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE IPP (A) 500 400 250 200 160 100 IPP, PEAK PULSE CURRENT (%) 100 Peak value (Ipp) tr= rise time to peak value tp= Decay time to half value 50 Half value 0 tr tp TIME REV. 0, 03-Dec-2001, KSWC02 ELECTRICAL CHARACTERISTICS @ TA= 25℃ unless otherwise specified TC0640H thru TC3500H PARAMETER RATED REPETITIVE OFF-STATE VOLTAGE OFF-STATE LEAKAGE CURRENT @ VDRM BREAKOVER VOLTAGE ON-STATE VOLTAGE @ IT=1.0A BREAKOVER CURRENT HOLDING CURRENT OFF-STATE CAPACITANCE SYMBOL UNITS VDRM Volts IDRM uA VBO Volts VT Volts IBOmA IBO+ mA IHmA IH+ mA Co pF LIMIT Max Max Max Max Min Max Min Max Typ TC0640H TC0720H TC0900H TC1100H TC1300H TC1500H TC1800H TC2300H TC2600H TC3100H TC3500H 58 65 75 90 120 140 160 190 220 275 320 5 5 5 5 5 5 5 5 5 5 5 77 88 98 130 160 180 220 265 300 350 400 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 50 50 50 50 50 50 50 50 50 50 50 800 800 800 800 800 800 800 800 800 800 800 150 150 150 150 150 150 150 150 150 150 150 800 800 800 800 800 800 800 800 800 800 800 200 200 200 120 120 120 120 80 80 80 80 SYMBOL VDRM IDRM VBR IBR VBO IBO IH VT IPP CO PARAMETER Stand-off Voltage Leakage current at stand-off voltage Breakdown voltage Breakdown current IBR Breakover voltage Breakover current IBO IH IDRM IPP I V VT VBR VDRM VBO Holding current On state voltage Peak pulse current Off state capacitance Note: 1 Note: 2 REV. 0, 03-Dec-2001, KSWC02 NOTES: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state. The Surge recovery time does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias. RATING AND CHARACTERISTICS CURVES TC0640H thru TC3500H FIG.1 - OFF STATE CURRENT vs JUNCTION TEMPERATURE FIG. 2 - RELATIVE VARIATION OF BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 100 1.20 NORMALIZED BREAKDOWN VOLTAGE I(DRM), OFF STATE CURRENT (uA) 1.15 10 1.10 VBR (TJ) VBR (TJ=25℃) 1.0 VDRM=50V 1.05 0.1 1.0 0.01 0.95 0.001 -25 0 25 50 75 100 125 150 0.90 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃) FIG. 3 - RELATIVE VARIATION OF BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE 1.10 FIG. 4 - ON STATE CURRENT vs ON STATE VOLTAGE 100 NORMALIZED BREAKOVER VOLTAGE 1.05 VBO (TJ) VBO (TJ=25℃) I(T), ON STATE CURRENT TJ=25℃ 10 1.0 0.95 -50 -25 0 25 50 75 100 125 150 175 1.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ, JUNCTION TEMPERATURE (℃) V (T); ON STATE VOLTAGE FIG. 5 - RELATIVE VARIATION OF HOLDING CURRENT vs JUNCTION TEMPERATURE 1.4 1.3 1 FIG. 6 - RELATIVE VARIATION OF JUNCTION CAPACITANCE vs REVERSE VOLTAGE BIAS NORMALIZED HOLDING CURRENT 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 -50 -25 0 25 50 75 100 125 IH (TJ) IH (TJ=25℃) NORMALIZE CAPACITANCE 1.2 CO(VR) CO(VR = 1V) Tj =25℃ f=1MHz VRMS = 1V 0.1 1 10 100 TJ, JUNCTION TEMPERATURE (℃) VR, REVERSE VOLTAGE REV. 0, 03-Dec-2001, KSWC02 TYPICAL CIRCUIT APPLICATIONS TC0640H thru TC3500H FUSE RING TSPD 1 TELECOM EQUIPMENT E.G. MODEM TIP RING PTC TSPD 1 TELECOM EQUIPMENT E.G. ISDN TSPD 2 TIP PTC RING PTC TSPD 2 TSPD 1 TSPD 3 TELECOM EQUIPMENT E.G. LINE CARD TIP PTC The PTC (Positive Temperature Coefficient) is an overcurrent protection device REV. 0, 03-Dec-2001, KSWC02