1KSMBJ68

Silicon Avalanche Diodes 1000W Surface Mount Transient Voltage Suppressor RoHS 1KSMBJ Series ® The 1KSMBJ range of surface mount protectors utilizes the proven glass passivated technology used in many Littelfuse product portfolios. Rated at 1000 watts (10 x 1000 µs double exponential waveform), the 1KSMBJ bridges the gap left by traditional types rated at 600 watts and 1500 watts, suiting many applications where both power handling and size are paramount. The extremely fast turn-on time (less than one pico second), coupled with the low clamping factor and low on-state impedance, make this range ideal for the protection of today’s circuits. Our specially selected range of voltages has been chosen to fulfill optimum protection for use in automotive and telecom applications. FEATURES • RoHS Compliant • Available in breakdown voltages from 6.8v. to 160v; specially designed for automotive applications • Response time: 1x10-12.secs (theoretical) • Glass passivated junction • Offers high-surge rating in compact package: bridges the Mechanical Specifications: Weight: Case: Terminals: Solderable Leads: Marking: Standard Packaging: 0.093 grammes (approx) DO-214AA Outline moulded plastic over glass passivated junction. UL 94 V-0 rated Solderable to MIL-STD-750 Method 2026 23°C for 10 seconds Cathode band, device code logo Supplied on reels of 3000 pieces. Tape width 12mm. Follows requirements of EIA 481-1 gap between 600W and 1.5KW • Forward surge rating: 100A 8.3ms single half sine wave • 100% tested • Operating temperature: -55°C to +150°C Agency Approvals: Recognized under the Components Program of Underwriters Laboratories. Agnecy File Numbers: E128662 ORDERING INFORMATION SMBJ CA Voltage Bi-Directional 5% Voltage Tolerance Tape and reeled (3000 pcs) 270 w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 1000W Surface Mount Transient Voltage Suppressor RoHS 1KSMBJ Series Device Code Reverse Stand Off Voltage VR (Volts) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 Breakdown Voltage VBR (Volts) @ IT MIN 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.80 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 MAX 7.46 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 IT (mA) 10.0 10.0 10.0 10.0 10.0 10.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Reverse Leakage IR @ VR (µA) 1000.0 (4) 1000.0 (4) 500.0 (4) 500.0 (4) 200.0 (4) 200.0 (4) 50.0 (4) 50.0 (4) 10.0 (4) 10.0 (4) 5.0 (4) 5.0 (4) 5.0 (4) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Maximum Clamping Voltage VC @ IPP (Volts) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 Maximum Peak Pulse Current ® ELECTRICAL SPECIFICATION @ Tamb 25°C Part Number IPP (A) 92.5 95.0 85.0 88.3 80.0 83.3 73.3 75.0 66.7 68.3 61.7 63.3 58.3 60.0 53.3 55.0 45.0 46.7 43.3 45.0 38.0 40.0 35.0 36.7 31.7 33.3 28.3 30.0 25.5 26.7 22.9 24.0 21.0 22.0 19.2 20.0 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 6.8 6.8A 7.5 7.5A 8.2 8.2A 9.1 9.1A 10 10A 11 11A 12 12A 13 13A 15 15A 16 16A 18 18A 20 20A 22 22A 24 24A 27 27A 30 30A 33 33A 36 36A N10A N10B N10C N10D N10E N10F N10G N10H N10I N10J N10K N10L N10M N10N N10O N10P N10Q N10R N10S N10T N10U N10V N10W N10X N10Y N10Z O10A O10B O10C O10D O10E O10F O10G O10H O10I O10J 6 SILICON DIODE ARRAYS 271 Notes: 1. All testing is performed at Tamb = 25˚C (+/- 3˚C) 2. Bv is measured using a pulse of 20 milliseconds or less 3. Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts 4. Peak Pulse Current is quoted @ 10/1000 µsec 5. All parameters are stated as tested on a FET Tester Model 3400 6. Devices are uni-directional. Vf is not specified. w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 1000W Surface Mount Transient Voltage Suppressor RoHS 1KSMBJ Series Device Code Reverse Stand Off Voltage VR (Volts) 31.6 33.3 34.8 36.8 38.1 40.2 41.3 43.6 45.4 47.8 50.2 53.0 55.1 58.1 60.7 64.1 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102.0 105.0 111.0 121.0 128.0 130.0 136.0 Breakdown Voltage VBR (Volts) @ IT MIN 35.1 37.1 38.7 40.9 42.3 44.7 45.9 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105.0 108.0 114.0 117.0 124.0 135.0 143.0 144.0 152.0 MAX 42.9 41.0 47.3 45.2 51.7 49.4 56.1 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 86.1 100.0 95.5 110.0 105.0 121.0 116.0 132.0 126.0 143.0 137.0 165.0 158.0 176.0 168.0 IT (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Reverse Leakage IR @ VR (µA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Maximum Clamping Voltage VC @ IPP (Volts) 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 108.0 103.0 118.0 113.0 131.0 125.0 144.0 137.0 158.0 152.0 173.0 165.0 187.0 179.0 215.0 207.0 230.0 219.0 Maximum Peak Pulse Current ® ELECTRICAL SPECIFICATION @ Tamb 25°C Part Number IPP (A) 17.5 18.7 16.0 16.8 14.8 15.5 13.7 14.3 12.3 13.0 11.3 11.8 10.2 10.8 9.2 9.7 8.5 8.8 7.5 8.0 7.0 7.3 6.3 6.6 5.8 6.1 5.3 5.6 4.7 4.8 4.3 4.6 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 1KSMBJ 39 39A 43 43A 47 47A 51 51A 56 56A 62 62A 68 68A 75 75A 82 82A 91 91A 100 100A 110 110A 120 120A 130 130A 150 150A 160 160A O10K O10L O10M O10N O10O O10P O10Q O10R O10S O10T O10U O10V O10W O10X O10Y O10Z P10A P10B P10C P10D P10E P10F P10G P10H P10I P10J P10K P10L P10M P10N P10O P10P Notes: 1. All testing is performed at Tamb = 25˚C (+/- 3˚C) 2. Bv is measured using a pulse of 20 milliseconds or less 3. Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts 4. Peak Pulse Current is quoted @ 10/1000 µsec 5. All parameters are stated as tested on a FET Tester Model 3400 6. Vf, for uni-directional devices, is measured using a 300 microsecond square wave pulse @ IT = 50A 272 w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 1000W Surface Mount Transient Voltage Suppressor RoHS 1KSMBJ Series 6 SILICON DIODE ARRAYS 2.16 2.74 2.16 2.26 Solder Pads All dimensions in mm w w w. l i t t e l f u s e . c o m 273