1N5630A

1N5630A

  • 厂商:

    LITTELFUSE

  • 封装:

  • 描述:

    1N5630A - Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors - Li...

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5630A 数据手册
Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N56 Series FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance •100% surge tested •-55°C to +150°C •Uni-polar ® 6 SILICON DIODE ARRAYS Min 31.8 Max 5.33 7.5 9.0 Min 25.4 Max 0.8 5.58 MAXIMUM RATING •Peak Pulse Power (Ppk): 1500 Watts (10 x 1000µs)@25°C (see diagram on page 3 for wave form) •1 watt steady state •Response time: 1 x 10-12 seconds (theoretical) •Operating & storage temperature: -55°C to +150°C MECHANICAL CHARACTERISTICS •Case: Metal hermetically sealed DO-13 package •Terminals: Axial leads, solderable per MIL-STD-202 Method 208 •Solderable leads = 230°C for 10 seconds (1.59mm from case) •Polarity: cathode indicated by colour band •Weight: 1.5 grammes (approx) Agency Approvals: Recognized under the Components Program of Underwriters Laboratories. Agency File Number: E128662 ORDERING INFORMATION 1N 56 X X A All dimensions in mm Voltage Reference 5% Voltage Tolerance Packaging Option B = Bulk (500 pcs) w w w. l i t t e l f u s e . c o m 313 Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N56 Series ® 100 100% Peak Pulse Power - Pp (kW) Exponential wave-form 10 Square wave-pulse 1 50% Permissable area of operation 0 0 °C 50 °C 100°C Tamb °C 150°C 200 °C 0.1 100ns 1µs 10 µs 100µs 1ms 10ms Pulse Time (tp) Figure 3 - Peak Pulse Power vs. Pulse Time Figure 1 - Peak Power Derating Curve Peak pulse power in percent of 25ºC rating 20,000 W 1.0 10,000 6000 4000 2000 1000 800 600 400 Measured @ Zero Bias 0.75 0.50 Permissable area of operation Cj (pf) 200 100 80 60 40 0.25 Measured at Stand-Off Voltage (VR) 0 0°C 50°C 100°C Tamb °C 150°C 200°C 30 10 Figure 2 - Continuous D.C. Power Derating CurveContinuous d.c. power dissipation 1.0 2 5 10 20 50 100 200 Reverse Voltage, Volts V(BR ) Figure 4 - Typical Junction Capacitance 314 w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N56 Series ELECTRICAL SPECIFICATION @ Tamb 25°C Part Number Reverse Stand Off Voltage VR (Volts) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.20 10.50 11.10 12.10 12.80 12.90 13.60 14.50 15.30 16.20 17.10 17.80 18.80 19.40 20.50 21.80 23.10 24.30 25.60 26.80 28.20 29.10 30.80 Breakdown Voltage VBR (Volts) @ IT MIN 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.50 10.80 11.40 11.70 12.40 13.50 14.30 14.40 15.20 16.20 17.10 18.00 19.00 19.80 20.90 21.60 22.80 24.30 25.70 27.00 28.50 29.70 31.40 32.40 34.20 MAX 7.48 7.14 8.25 7.88 9.02 8.61 10.00 9.55 11.00 10.50 12.10 11.60 13.20 12.60 14.30 13.70 16.50 15.80 17.60 16.80 19.80 18.90 22.00 21.00 24.20 23.10 26.40 25.20 29.70 28.40 33.00 31.50 36.30 34.70 39.60 37.80 (mA) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Reverse Leakage I R @ VR (µA) 1000.0 1000.0 500.0 500.0 200.0 200.0 50.0 50.0 10.0 10.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Maximum Clamping Voltage VC @ IPP (Volts) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 Maximum Peak Pulse Current IPP (A) 139.0 143.0 128.0 132.0 120.0 124.0 109.0 112.0 100.0 103.0 93.0 96.0 87.0 90.0 79.0 82.0 68.0 71.0 64.0 67.0 56.5 59.5 51.5 54.0 47.0 49.0 43.0 45.0 38.5 40.0 34.5 36.0 31.5 33.0 29.0 30.0 Max Voltage Temperature Variation of VBR (mV/°C) 5.0 5.0 5.0 5.0 6.0 6.0 7.0 7.0 8.0 8.0 9.0 9.0 10.0 10.0 11.0 11.0 13.0 12.0 16.0 14.0 17.0 19.0 20.0 19.0 21.0 20.0 25.0 23.0 28.0 25.0 31.0 28.0 31.0 30.0 35.0 31.0 ® 6 SILICON DIODE ARRAYS 315 1N5629* 1N5629A* 1N5630 1N5630A 1N5631 1N5631A 1N5632 1N5632A 1N5633 1N5633A 1N5634 1N5634A 1N5635 1N5635A 1N5636 1N5636A 1N5637* 1N5637A* 1N5638* 1N5638A* 1N5639* 1N5639A* 1N5640 1N5640A 1N5641 1N5641A 1N5642 1N5642A 1N5643* 1N5643A* 1N5644* 1N5644A 1N5645 1N5645A 1N5646* 1N5646A* Suffix ‘A’ denotes 5% tolerance device, no suffix denotes a 10% tolerance device. 1N5629 to 1N5647A VF max = 3.5V at IF = 50A 300 µS square wave pulse. 1N5648 to 1N5665A VF max = 5.0V at IF = 50A 300 µS square wave pulse. * Preferred voltages. w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N56 Series ELECTRICAL SPECIFICATION @ Tamb 25°C Part Number Reverse Stand Off Voltage VR (Volts) 31.60 33.30 34.80 36.80 38.10 40.20 41.30 43.60 45.4 47.8 50.2 53.0 55.1 58.1 60.7 64.1 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102.0 105.0 111.0 121.0 128.0 130.0 136.0 138.0 145.0 146.0 154.0 162.0 171.0 Breakdown Voltage VBR (Volts) @ IT MIN 35.10 37.10 38.70 40.90 42.30 44.70 45.90 48.50 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105.0 108.0 114.0 117.0 124.0 135.0 143.0 144.0 152.0 153.0 162.0 162.0 171.0 180.0 190.0 MAX 42.90 41.00 47.30 45.20 51.70 49.40 56.10 53.60 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 86.1 100.0 95.5 110.0 105.0 121.0 116.0 132.0 126.0 143.0 137.0 165.0 158.0 176.0 168.0 187.0 179.0 198.0 189.0 220.0 210.0 (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Reverse Leakage IR @ VR (µA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Maximum Clamping Voltage VC @ IPP (Volts) 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 108.0 103.0 118.0 113.0 131.0 125.0 144.0 137.0 158.0 152.0 173.0 165.0 187.0 179.0 215.0 207.0 230.0 219.0 244.0 234.0 258.0 246.0 287.0 274.0 Maximum Peak Pulse Current IPP (A) 26.5 28.0 24.0 25.3 22.2 23.2 20.4 21.4 18.6 19.5 16.9 17.7 15.3 16.3 13.9 14.6 12.7 13.3 11.4 12.0 10.4 11.0 9.5 9.9 8.7 9.1 8.0 8.4 7.0 7.2 6.5 6.8 6.2 6.4 5.8 6.1 5.2 5.5 Max Voltage Temperature Variation of VBR (mV/°C) 39.0 36.0 46.0 44.0 50.0 48.0 55.0 51.0 58.0 56.0 65.0 62.0 71.0 69.0 80.0 76.0 90.0 86.0 99.0 94.0 109.0 104.0 120.0 115.0 131.0 125.0 142.0 136.0 164.0 157.0 175.0 167.0 186.0 188.0 197.0 188.0 219.0 209.0 ® 1N5647 1N5647A 1N5648 1N5648A 1N5649* 1N5649A* 1N5650 1N5650A 1N5651 1N5651A 1N5652 1N5652A 1N5653 1N5653A 1N5654 1N5654A 1N5655* 1N5655A* 1N5656* 1N5656A* 1N5657 1N5657A 1N5658 1N5658A 1N5659 1N5659A 1N5660* 1N5660A* 1N5661 1N5661A 1N5662 1N5662A 1N5663 1N5663A 1N5664 1N5664A 1N5665 1N5665A Suffix ‘A’ denotes 5% tolerance device, no suffix denotes a 10% tolerance device. 1N5629 to 1N5647A VF max = 3.5V at IF = 50A 300 µS square wave pulse. 1N5648 to 1N5665A VF max = 5.0V at IF = 50A 300 µS square wave pulse. * Preferred voltages. 316 w w w. l i t t e l f u s e . c o m
1N5630A
PDF文档中包含了以下信息: 1. 物料型号:NJM2210 2. 器件简介:NJM2210是一款具有良好音质的音频功率放大器,适用于车载、家庭和专业音频设备。

3. 引脚分配:共有8个引脚,包括电源、接地、输入和输出等。

4. 参数特性:工作电压范围为4.5V至18V,输出功率为2x15W(使用8欧姆负载时)。

5. 功能详解:NJM2210具有多种保护功能,如过热、过电流和短路保护。

6. 应用信息:适用于各种音频放大应用,包括便携式设备、家庭影院系统和专业音响设备。

7. 封装信息:提供SOIC8和DIP8两种封装形式。
1N5630A 价格&库存

很抱歉,暂时无法提供与“1N5630A”相匹配的价格&库存,您可以联系我们找货

免费人工找货