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1N6066

1N6066

  • 厂商:

    LITTELFUSE

  • 封装:

  • 描述:

    1N6066 - Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors - Lit...

  • 详情介绍
  • 数据手册
  • 价格&库存
1N6066 数据手册
Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance • 100% surge tested • -55°C to +150°C • Bi-directional ® 6 SILICON DIODE ARRAYS Min 31.8 Max 5.33 7.5 9.0 Min 25.4 Max 0.8 5.58 MAXIMUM RATING • Peak Pulse Power (Ppk): 15000 Watts (10 x 1000µs)@25°C (see diagram on page 3 for wave form) • 1 watt steady state • Response time: 1 x 10-12 seconds (theoretical) • Operating & storage temperature: -55°C to +150°C MECHANICAL CHARACTERISTICS • Case: Metal hermetically sealed DO-13 package • Terminals: Axial leads, solderable per MIL-STD-202 Method 208 • Solderable leads = 230°C for 10 seconds (1.59mm from case) • Weight: 1.5 grammes (approx) Agency Approvals: Recognized under the Components Program of Underwriters Laboratories. Agency File Number: E128662 ORDERING INFORMATION 1N60 X X A All dimensions in mm Voltage Reference 5% Voltage Tolerance Packaging Option B = Bulk (500 pcs) w w w. l i t t e l f u s e . c o m 317 Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series 100% 50% Permissable area of operation 0 0°C 50°C 100°C Tamb ° C 150°C 200°C Figure 1 - Peak Power Derating Curve Peak pulse power in percent of 25˚C rating W 1.0 0.75 0.50 Permissable area of operation 0.25 0 0°C 50°C 100°C Tamb °C 150°C 200°C Figure 2 - Continuous D.C. Power Derating Curve Continuous d.c. power dissipation 318 w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series ELECTRICAL SPECIFICATION @ Tamb 25°C Part Number Reverse Stand Off Voltage VR (Volts) 5.5 6.0 6.5 7.0 7.0 7.5 8.0 8.5 8.5 9.0 9.0 10.0 10.0 11.0 11.0 12.0 12.0 13.0 14.0 15.0 16.0 17.0 17.0 18.0 19.0 20.0 21.0 22.0 24.0 25.0 26.0 28.0 29.0 30.0 Breakdown Voltage VBR (Volts) @ IT MIN 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.50 10.80 11.40 11.70 12.40 13.50 14.30 14.40 15.20 16.20 17.10 18.00 19.00 19.80 20.90 21.60 22.80 24.30 25.70 27.00 28.50 29.70 31.40 32.40 34.20 MAX 8.25 7.88 9.02 8.61 10.00 9.55 11.00 10.50 12.10 11.60 13.20 12.60 14.30 13.70 16.50 15.80 17.60 16.80 19.80 18.90 22.00 21.00 24.20 23.10 26.40 25.20 29.70 28.40 33.00 31.50 36.30 34.70 39.60 37.80 (mA) 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Reverse Leakage IR @ VR (µA) 1000.0 1000.0 500.0 500.0 200.0 200.0 50.0 50.0 10.0 10.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Maximum Clamping Voltage VC @ IPP (Volts) 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 Maximum Peak Pulse Current IPP (A) 128.0 132.0 120.0 124.0 109.0 112.0 100.0 103.0 93.0 96.0 87.0 90.0 79.0 82.0 68.0 71.0 64.0 67.0 56.5 59.5 51.5 54.0 47.0 49.0 43.0 45.0 38.5 40.0 34.5 36.0 31.5 33.0 29.0 30.0 Max Voltage Temperature Variation of VBR (mV/°C) 5.0 5.0 5.0 5.0 7.0 7.0 7.0 7.0 8.0 8.0 9.0 9.0 10.0 10.0 11.0 12.0 12.0 13.0 14.0 15.0 17.0 18.0 19.0 20.0 24.0 24.0 27.0 28.0 36.0 31.0 32.0 34.0 36.0 37.0 ® 6 SILICON DIODE ARRAYS 319 1N6036* 1N6036A* 1N6037* 1N6037A* 1N6038 1N6038A 1N6039 1N6039A 1N6040* 1N6040A* 1N6041* 1N6041A* 1N6042 1N6042A 1N6043 1N6043A 1N6044 1N6044A 1N6045* 1N6045A* 1N6046 1N6046A 1N6047 1N6047A 1N6048 1N6048A 1N6049* 1N6049A* 1N6050 1N6050A 1N6051* 1N6051A* 1N6052 1N6052A Suffix ‘A’ denotes 5% tolerance device, no suffix denotes a 10% tolerance device. * Preferred voltages. w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series ELECTRICAL SPECIFICATION @ Tamb 25°C Part Number Reverse Stand Off Voltage VR (Volts) 31.0 33.0 34.0 36.0 38.0 40.0 41.0 43.0 45.0 47.0 48.0 53.0 55.0 58.0 60.0 64.0 66.0 70.0 73.0 75.0 81.0 82.0 90.0 94.0 95.0 100.0 105.0 110.0 121.0 128.0 137.0 145.0 145.0 150.0 155.0 160.0 165.0 170.0 175.0 185.0 Breakdown Voltage VBR (Volts) @ IT MIN 35.10 37.10 38.70 40.90 42.30 44.70 45.90 48.50 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 73.8 77.9 81.9 86.5 90.0 95.0 99.0 105.0 108.0 114.0 117.0 124.0 135.0 143.0 153.0 162.0 162.0 171.0 171.0 181.0 180.0 190.0 198.0 209.0 MAX 42.90 41.00 47.30 45.20 51.70 49.40 56.10 53.60 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 86.1 100.0 95.5 110.0 105.0 121.0 116.0 132.0 126.0 143.0 137.0 165.0 158.0 187.0 179.0 198.0 189.0 210.0 200.0 220.0 210.0 242.0 231.0 (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Maximum Reverse Leakage IR @ VR (µA) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Maximum Clamping Voltage VC @ IPP (Volts) 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1 80.5 77.0 89.0 85.0 98.0 92.0 108.0 103.0 118.0 113.0 131.0 125.0 144.0 137.0 158.0 152.0 173.0 165.0 187.0 179.0 215.0 207.0 258.0 245.0 274.0 261.0 292.0 278.0 308.0 294.0 344.0 328.0 Maximum Peak Pulse Current IPP (A) 26.5 28.0 24.0 25.3 22.2 23.2 20.4 21.4 18.6 19.5 16.9 17.7 15.3 16.3 13.9 14.6 12.7 13.3 11.4 12.0 10.4 11.0 9.5 9.9 8.7 9.1 8.0 8.4 7.0 7.2 5.8 6.1 5.5 5.7 5.1 5.4 4.9 5.1 4.3 4.6 Max Voltage Temperature Variation of VBR (mV/°C) 39.0 40.0 44.0 43.0 49.0 47.0 53.0 51.0 58.0 56.0 64.0 62.0 70.0 68.0 77.0 75.0 84.0 82.0 90.0 86.0 99.0 94.0 109.0 104.0 120.0 115.0 131.0 125.0 142.0 136.0 164.0 157.0 175.0 167.0 186.0 188.0 197.0 188.0 219.0 209.0 ® 1N6053* 1N6053A* 1N6054* 1N6054A* 1N6055* 1N6055A* 1N6056* 1N6056A* 1N6057 1N6057A 1N6058* 1N6058A* 1N6059* 1N6059A* 1N6060* 1N6060A* 1N6061* 1N6061A* 1N6062 1N6062A 1N6063* 1N6063A* 1N6064* 1N6064A* 1N6065 1N6065A 1N6066 1N6066A 1N6067 1N6067A 1N6068 1N6068A 1N6069* 1N6069A* 1N6070 1N6070A 1N6071* 1N6071A* 1N6072 1N6072A Suffix ‘A’ denotes 5% tolerance device, no suffix denotes a 10% tolerance device. * Preferred voltages. 320 w w w. l i t t e l f u s e . c o m
1N6066
### 物料型号 - 1N60系列:包括1N6036至1N6072等多个型号,不同型号具有不同的反向击穿电压和峰值脉冲电流等参数。

### 器件简介 - 1N60系列为金属轴向引线瞬态电压抑制器,具有1500瓦特的峰值脉冲功率,广泛应用于电路保护。

### 引脚分配 - 器件采用金属轴向引线封装,引脚为轴向引线,可按照MIL-STD-202方法208进行焊接。

### 参数特性 - 反向击穿电压范围:6.8至200伏特。 - 玻璃钝化结,具有良好的钳位能力。 - 低齐纳阻抗。 - 100%浪涌测试。 - 工作温度范围:-55°C至+150°C,双向特性。

### 功能详解 - 器件能够在纳秒级响应时间(理论值1x10^-12秒)内钳制电压,保护电路免受瞬态电压冲击。

### 应用信息 - 广泛应用于需要瞬态电压保护的场合,如电源、通信设备等。

### 封装信息 - 采用金属密封的DO-13封装,引脚可焊,符合UL认证,文件编号E128662。
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