Battrax® Single Port Negative SLIC Protector
RoHS
(G)
5
This programmable Battrax device is referenced to a negative voltage source. This dual-chip package includes internal diodes for transient protection from positive surge events.
SIDACtor Devices
di/dt Amps/µs 500 500
1
(T)
2
(-VREF)
3
(R)
For a diagram of a Battrax application, see Figure 6.47 in Section 6, “Reference Designs” of this Telecom Design Guide.
Electrical Parameters
Part Number * B1101U_L B1161U_L B1201U_L VDRM Volts |-VREF| + |-1.2V| |-VREF| + |-1.2V| |-VREF| + |-1.2V| VS Volts |-VREF| + |-10V| |-VREF| + |-10V| |-VREF| + |-10V| VT Volts 4 4 4 VF Volts 5 5 5 IDRM µAmps 5 5 5 IGT mAmps 100 100 100 IT Amps 2.2 2.2 2.2 IH mAmps 100 160 200
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number. For individual “UA” and “UC” surge ratings, see table below. General Notes: • All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. • IPP is a repetitive surge rating and is guaranteed for the life of the product. • IPP ratings assume a VREF = -48 V. • VDRM is measured at IDRM. • VS is measured at 100 V/µs. • VREF maximum value for the B1101, B1161, and/or B1201 is -200 V.
Surge Ratings in Amps
IPP Series 0.2x310 * 2x10 * 8x20 * 0.5x700 ** 2x10 ** 1.2x50 ** Amps A C 20 50 Amps 150 500 Amps 150 400 10x160 * 10x160 ** Amps 90 200 10x560 * 10x560 ** Amps 50 150 5x320 * 9x720 ** Amps 75 200 10x360 * 10x1000 * 5x310 * ITSM 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz Amps 75 175 Amps 45 100 Amps 75 200 Amps 20 50
* Current waveform in µs ** Voltage waveform in µs
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Battrax® Single Port Negative SLIC Protector
Thermal Considerations
Package Modified MS-013
6 5 4 1 2 3
Symbol TJ TS RθJA
Parameter Operating Junction Temperature Range Storage Temperature Range Thermal Resistance: Junction to Ambient
Value -40 to +125 -65 to +150 60
Unit °C °C °C/W
Capacitance Values
pF Part Number B1101UAL B1101UCL B1161UAL B1161UCL B1201UAL B1201UCL MIN 50 50 50 50 50 50 MAX 200 200 200 200 200 200
Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias.
+I VF
IPP – Peak Pulse Current – %IPP
100
Peak Value
tr = r ise time to peak value td = decay time to half value
VS VDRM -V
VT +V
Waveform = tr x td
IDRM IH IGT IT -I
50
Half Value
0 0 tr td t – Time (µs)
V-I Characteristics
14 12 10 8 6 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160
tr x td Pulse Waveform
Percent of VS Change – %
IH (TC = 25 ˚C)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160
IH
25 ˚C
25 ˚C
Ratio of
Junction Temperature (TJ) – ˚C
Normalized VS Change versus Junction Temperature
Case Temperature (TC) – ˚C
Normalized DC Holding Current versus Case Temperature
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