CR1800SB

CRxxxx series Description The CR range of protectors are based on the proven technology of the T10 thyristor product. Designed for transient voltage protection of telecommunications equipment, it provides higher power handling than a conventional avalanche diode (TVS) and when compared to a GDT offers lower voltage clamping levels and infinite surge life. Packaged in a transfer molded DO-214AA surface mount outline designed for high speed pick & place machines used in today’s surface mount assembly lines. Electrical Charecteristics The electrical characteristics of a CRXXXX device is similar to that of a self gated Triac, but the CR is a two terminal device with no gate. The gate function is achieved by an internal current controlled mechanism. Like the T.T.S. diodes, the CRXXXX has a standoff voltage (Vrm) which should be equal to or greater than the operating voltage of the system to be protected. At this voltage (Vrm) the current consumption of the CRXXXX is negligible and will not effect the protected system. When a transient occurs, the voltage across the CRXXXX will increase until the breakdown voltage (Vbr) is reached. At this point the device will operate in a similar way to a T.V.S. device and is in an avalanche mode. The voltage of the transient will now be limited and will only increase by a few volts as the device diverts more current. As this transient current rises, a level of current through the device is reached (Ibo) which causes the device to switch to a fully conductive state such that the voltage across the device is now only a few volts (Vt). The voltage at which the device switches from the avalanche mode to the fully conductive state (Vt) is known as the Breakover Voltage (Vbo). When the device is in the Vt state, high currents can be deverted without damage to the CRXXXX due to the low voltage across the device, since the limiting factor in such devices is dissipated power (V x I). Resetting of the device to the non conducting state is controlled by the current flowing through the device. When the current falls below a certain value, known as the Holding Current (Ih), the device resets automatically. As with the avalanche T.V.S. device, if the CRXXXX is subjected to a surge current which is beyond its maximum rating, then the device will fail in short circuit mode, this ensures that the equipment is ultimately protected. Selecting A CRXXXX 1. When selecting a CRXXXX device, it is important that the Vrm of the device is equal to or greater than the operating voltage of the system. 2. The minimum Holding Current (Ih) must be greater than the current the system is capable of delivering otherwise the device will remain conducting following a transient condition. IT IH VT IRM VRM VBR VBO MIN IBO V-I Graph Illustrating Symbols and Terms for the CR Surge Protection Device. The CRXXXX Range Can Be Used to Protect Against Surges As Defined In The Following International Standards. SA FCC Rules Part 68/D Bellcore Specification Metallic Longitudinal TR-NWT-001089 10/560µs 10/160µs 10/1000µs 2/10µs 100v/µs 100/700µs 5/310µs 10/700µs 5/310µs 0.5/700µs 0.8/310µs 8/20µs 1-2/50µs 10/700µs 5/310µs 50A 100A 37A 1KV 1.0KV 25A 1000V 25A SB 100A 150A 75A 1KV 1.5KV 38A 2KV 50A 1.0KV 25A 100A 300V 10000V 25A SC 100A 200A 100A 500A 1KV 1.5KV 38A 4.0KV 100A 4.0KV 100A 250A 500V 4000V 100A ITU K-17 (Formerly CCITT) VDE 0433 C-NET 131-24 IEC 1000-4-5 ITU K-20 (Formerly CCITT) Voltage Wave Form Current Wave Form Voltage Wave Form Current Wave Form Voltage Wave From Current Wave Form (Discharge through 2Ω impendance) I Voltage Wave Form Voltage Wave Form Current Wave Form 52 w w w. l i t t e l f u s e . c o m CRxxxx series Specifications Electrical Charecteristics (Tj=25°C) SYMBOL VRM VBR VBO VT PARAMETER Stand-off Coltage Breakdown Voltage Breakover Voltage On-State Voltage SYMBOL IRM IBO IH PARAMETER Stand-off Current Breakover Current Holding Current THERMAL DATA T stg Storage and Operating Junction Temperature range Tj TL Maximum Temperature For Soldering (For period of 10 seconds max) VALUE -40 to +150 150 230 UNIT °C °C °C Stock Number Device Code Reverse Stand-off Voltage 25 58 65 75 90 120 140 160 190 220 275 320 25 58 65 75 90 120 140 160 190 220 275 320 25 58 65 75 90 120 140 160 190 220 275 320 Maximum Reverse Leakage µA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Maximum Breakover Voltage @Ibo 40 77 88 98 130 160 180 220 260 300 350 400 40 77 88 98 130 160 180 220 260 300 350 400 40 77 88 98 130 160 180 220 260 300 350 400 Maximum Breakover Current mA 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 800 Minimum Holding Current mA 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 150 Maximum On-State Voltage @1A 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Typical Capacitance @1MHz 2v bias pF 100 60 60 60 60 40 40 40 30 30 30 30 100 60 60 60 60 40 40 40 30 30 30 30 200 120 120 120 120 80 80 80 60 60 60 60 MAXIMUM RATINGS SUFFIX SA Ipp 10x160µs Amps Ipp 10x560µs Amps ITSM 60Hz Amps DI/dt Amps/µs 100 50 20 500 CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR CR 0300 0640 0720 0800 1100 1300 1500 1800 2300 2600 3100 3500 0300 0640 0720 0800 1100 1300 1500 1800 2300 2600 3100 3500 0300 0640 0720 0800 1100 1300 1500 1800 2300 2600 3100 3500 SA SA SA SA SA SA SA SA SA SA SA SA SB SB SB SB SB SB SB SB SB SB SB SB SC SC SC SC SC SC SC SC SC SC SC SC 030A 064A 072A 080A 110A 130A 150A 180A 230A 260A 310A 350A 030B 064B 072B 080B 110B 130B 150B 180B 230B 260B 310B 350B 030C 064C 072C 080C 110C 130C 150C 180C 230C 260C 310C 350C MAXIMUM RATINGS SUFFIX SB Ipp 10x160µs Amps Ipp 10x560µs Amps ITSM 60Hz Amps DI/dt Amps/µs 150 100 30 500 MAXIMUM RATINGS SUFFIX SC Ipp 2x10µs Amps Ipp 10x160µs Amps Ipp 10x560µs Amps ITSM 60Hz Amps dI/dt Amps/µs 500 200 100 60 500 w w w. l i t t e l f u s e . c o m 53 CRxxxx series ° CRXXXXSB CRXXXXSC CRXXXXSA ° PULSE WAVE FORM (10/10000µS) IPP - Percentage peak current - %IPP tr 100 t2 90 tr = 1.25 x (t2 - t1) =10µs 50 td = 1000µs 10 t1 1 2 3 4 ° t - Time - m S e c PEAK SURGE ON-STATE CURRENT VS. SURGE CURRENT DURATION Peak Current Surge (Non-Repetitive) On-State Current (RMS) - Amps 100 80 60 50 40 30 20 10 8 6 5 4 3 2 1 1 2 345 10 20 30 40 50 100 200 300 1000 CRXXXXSB CRXXXXSC CRXXXXSA Surge Current Duration - full cycles @ 60HZ SINUSOIDAL 10x160µs PULSE WAVE FORM Ipp - Peak Pulse Current - %Ipp Peak Value - Ipp TEST WAVEFORM PARAMETER tr = 10 sec td = 160 sec Ipp t =d 2 10x560µs PULSE WAVE FORM Ipp - Peak Pulse Current - %Ipp Peak Value - Ipp TEST WAVEFORM PARAMETER tr = 10 sec td = 560 sec Ipp t =d 2 Half Value = Half Value = 10x160 Waveform 10x560 Waveform 0 80 160 240 320 400 480 0 280 560 840 1,120 1,400 1,680 t - Time - Sec t - Time - Sec 54 w w w. l i t t e l f u s e . c o m