P1602ACMC

Two-chip MicroCapacitance (MC) SIDACtor Device Two-chip MicroCapacitance (MC) SIDACtor Device 1 (T) 3 (R) 2 (G) The two-chip modified TO-220 MC SIDACtor solid state device protects telecommunication equipment in applications that reference Tip and Ring to earth ground but do not require balanced protection. SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68). Electrical Parameters: A-rated Part Number * P0302AA MC P0602AA MC VDRM Volts 6 25 VS Volts 25 40 VDRM Volts 12 50 VS Volts 50 80 VT Volts 4 4 IDRM µAmps 5 5 IS mAmps 800 800 IT Amps 2.2 2.2 IH mAmps 50 50 CO pF 45 25 Pins 1-2, 3-2 Pins 1-3 Electrical Parameters: C-rated Part Number * P0602AC MC P1402AC MC P1602AC MC P2202AC MC P2702AC MC P3002AC MC P3602AC MC P4202AC MC P4802AC MC P6002AC MC VDRM Volts 25 58 65 90 120 140 170 190 220 275 VS Volts 40 77 95 130 160 180 220 250 300 350 VDRM Volts 50 116 130 180 240 280 340 380 440 550 VS Volts 80 154 190 260 320 360 440 500 600 700 VT Volts 4 4 4 4 4 4 4 4 4 4 IDRM µAmps 5 5 5 5 5 5 5 5 5 5 IS mAmps 800 800 800 800 800 800 800 800 800 800 IT Amps 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 IH mAmps 50 150 150 150 150 150 150 150 150 150 CO pF 60 60 60 50 50 50 40 40 40 40 Pins 1-2, 3-2 Pins 1-3 * For surge ratings, see table below. General Notes: • All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. • IPP is a repetitive surge rating and is guaranteed for the life of the product. • Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. • VDRM is measured at IDRM. • VS is measured at 100 V/µs. • Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. • Off-state capacitance (CO) is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias. Surge Ratings IPP 2x10 µs Amps 150 500 IPP 8x20 µs Amps 150 400 IPP 10x160 µs Amps 90 200 IPP 10x560 µs Amps 50 150 IPP 10x1000 µs Amps 45 100 ITSM 60 Hz Amps 20 50 di/dt Amps/µs 500 500 Series A C http://www.littelfuse.com +1 972-580-7777 2 - 32 © 2004 Littelfuse, Inc. SIDACtor® Data Book and Design Guide Two-chip MicroCapacitance (MC) SIDACtor Device Thermal Considerations Package Modified TO-220 Symbol TJ TS RθJA Parameter Operating Junction Temperature Range Storage Temperature Range Thermal Resistance: Junction to Ambient Value -40 to +150 -65 to +150 50 Unit °C °C °C/W PIN 1 PIN 2 PIN 3 +I +I IPP – Peak Pulse Current – %IPP tr = r ise time to peak value td = decay time to half value IT IT IS S IH IDRM -V -V VT VT VDRM VDRM VS V S 100 Peak Value Waveform = tr x td +V +V 50 Half Value 0 0 tr td t – Time (µs) -I -I V-I Characteristics tr x td Pulse Wave-form 14 Percent of VS Change – % 10 IH (TC = 25 ˚C) 12 8 6 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160 IH 25 ˚C 25 ˚C Ratio of Case Temperature (TC) – ˚C Junction Temperature (TJ) – ˚C Normalized VS Change versus Junction Temperature Normalized DC Holding Current versus Case Temperature © 2004 Littelfuse, Inc. SIDACtor® Data Book and Design Guide 2 - 33 http://www.littelfuse.com +1 972-580-7777 Data Sheets